JPS52149477A - Forming method of schottky barriers - Google Patents

Forming method of schottky barriers

Info

Publication number
JPS52149477A
JPS52149477A JP6617776A JP6617776A JPS52149477A JP S52149477 A JPS52149477 A JP S52149477A JP 6617776 A JP6617776 A JP 6617776A JP 6617776 A JP6617776 A JP 6617776A JP S52149477 A JPS52149477 A JP S52149477A
Authority
JP
Japan
Prior art keywords
forming method
schottky barriers
forming
film
barriers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6617776A
Other languages
Japanese (ja)
Other versions
JPS5741099B2 (en
Inventor
Yoshinobu Monma
Takeshi Fukuda
Kiyoshi Yoshinaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP6617776A priority Critical patent/JPS52149477A/en
Publication of JPS52149477A publication Critical patent/JPS52149477A/en
Publication of JPS5741099B2 publication Critical patent/JPS5741099B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To form barriers of low forward voltage and fast rise speed within ICs by forming a metal film such as Pt, Ti, etc. on the barrier-forming portions over the semiconductor polycrystalline layer deposited for the purpose of preventing the electromigration of Al electrodes without removing said layer, thence sintering said film.
COPYRIGHT: (C)1977,JPO&Japio
JP6617776A 1976-06-07 1976-06-07 Forming method of schottky barriers Granted JPS52149477A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6617776A JPS52149477A (en) 1976-06-07 1976-06-07 Forming method of schottky barriers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6617776A JPS52149477A (en) 1976-06-07 1976-06-07 Forming method of schottky barriers

Publications (2)

Publication Number Publication Date
JPS52149477A true JPS52149477A (en) 1977-12-12
JPS5741099B2 JPS5741099B2 (en) 1982-09-01

Family

ID=13308290

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6617776A Granted JPS52149477A (en) 1976-06-07 1976-06-07 Forming method of schottky barriers

Country Status (1)

Country Link
JP (1) JPS52149477A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54154271A (en) * 1978-05-25 1979-12-05 Nec Corp Manufacture of semiconductor device
JPS57183073A (en) * 1981-04-30 1982-11-11 Ibm Method of forming schottky diode
JPS5984468A (en) * 1982-11-05 1984-05-16 Nec Corp Semiconductor device
JPS59501988A (en) * 1982-11-11 1984-11-29 ハイドリル　カンパニ− Safety valve device and method

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54154271A (en) * 1978-05-25 1979-12-05 Nec Corp Manufacture of semiconductor device
JPH0137856B2 (en) * 1978-05-25 1989-08-09 Nippon Electric Co
JPS57183073A (en) * 1981-04-30 1982-11-11 Ibm Method of forming schottky diode
JPS5984468A (en) * 1982-11-05 1984-05-16 Nec Corp Semiconductor device
JPS59501988A (en) * 1982-11-11 1984-11-29 ハイドリル　カンパニ− Safety valve device and method

Also Published As

Publication number Publication date
JPS5741099B2 (en) 1982-09-01

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