JPS52141589A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS52141589A
JPS52141589A JP5436977A JP5436977A JPS52141589A JP S52141589 A JPS52141589 A JP S52141589A JP 5436977 A JP5436977 A JP 5436977A JP 5436977 A JP5436977 A JP 5436977A JP S52141589 A JPS52141589 A JP S52141589A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
semiconductor device
transistors
formin
vertical
make
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5436977A
Inventor
Yoshikazu Hosokawa
Tatsuya Kamei
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0821Combination of lateral and vertical transistors only

Abstract

PURPOSE:To make it possible to remove faults of vertical and horizontal types transistors, by formin those transistors in a manner so that they are connected together in parallel having common corresponding electrodes in isolated areas of a semiconductor substrate.
JP5436977A 1977-05-13 1977-05-13 Semiconductor device Pending JPS52141589A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5436977A JPS52141589A (en) 1977-05-13 1977-05-13 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5436977A JPS52141589A (en) 1977-05-13 1977-05-13 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS52141589A true true JPS52141589A (en) 1977-11-25

Family

ID=12968736

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5436977A Pending JPS52141589A (en) 1977-05-13 1977-05-13 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS52141589A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006216802A (en) * 2005-02-04 2006-08-17 Hitachi Ltd Semiconductor device
US8018006B2 (en) 2005-02-04 2011-09-13 Hitachi Ulsi Systems Co., Ltd. Semiconductor device having an enlarged space area surrounding an isolation trench for reducing thermal resistance and improving heat dissipation

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006216802A (en) * 2005-02-04 2006-08-17 Hitachi Ltd Semiconductor device
US8018006B2 (en) 2005-02-04 2011-09-13 Hitachi Ulsi Systems Co., Ltd. Semiconductor device having an enlarged space area surrounding an isolation trench for reducing thermal resistance and improving heat dissipation

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