JPS52141589A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS52141589A
JPS52141589A JP5436977A JP5436977A JPS52141589A JP S52141589 A JPS52141589 A JP S52141589A JP 5436977 A JP5436977 A JP 5436977A JP 5436977 A JP5436977 A JP 5436977A JP S52141589 A JPS52141589 A JP S52141589A
Authority
JP
Japan
Prior art keywords
semiconductor device
transistors
formin
semiconductor substrate
vertical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5436977A
Other languages
Japanese (ja)
Inventor
Tatsuya Kamei
Yoshikazu Hosokawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP5436977A priority Critical patent/JPS52141589A/en
Publication of JPS52141589A publication Critical patent/JPS52141589A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0821—Combination of lateral and vertical transistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To make it possible to remove faults of vertical and horizontal types transistors, by formin those transistors in a manner so that they are connected together in parallel having common corresponding electrodes in isolated areas of a semiconductor substrate.
JP5436977A 1977-05-13 1977-05-13 Semiconductor device Pending JPS52141589A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5436977A JPS52141589A (en) 1977-05-13 1977-05-13 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5436977A JPS52141589A (en) 1977-05-13 1977-05-13 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS52141589A true JPS52141589A (en) 1977-11-25

Family

ID=12968736

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5436977A Pending JPS52141589A (en) 1977-05-13 1977-05-13 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS52141589A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006216802A (en) * 2005-02-04 2006-08-17 Hitachi Ulsi Systems Co Ltd Semiconductor device
US8018006B2 (en) 2005-02-04 2011-09-13 Hitachi Ulsi Systems Co., Ltd. Semiconductor device having an enlarged space area surrounding an isolation trench for reducing thermal resistance and improving heat dissipation

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006216802A (en) * 2005-02-04 2006-08-17 Hitachi Ulsi Systems Co Ltd Semiconductor device
US8018006B2 (en) 2005-02-04 2011-09-13 Hitachi Ulsi Systems Co., Ltd. Semiconductor device having an enlarged space area surrounding an isolation trench for reducing thermal resistance and improving heat dissipation

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