JPS52141189A - Production of distribution feedback type semiconductor laser - Google Patents

Production of distribution feedback type semiconductor laser

Info

Publication number
JPS52141189A
JPS52141189A JP5720676A JP5720676A JPS52141189A JP S52141189 A JPS52141189 A JP S52141189A JP 5720676 A JP5720676 A JP 5720676A JP 5720676 A JP5720676 A JP 5720676A JP S52141189 A JPS52141189 A JP S52141189A
Authority
JP
Japan
Prior art keywords
type semiconductor
distribution feedback
feedback type
production
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5720676A
Other languages
English (en)
Japanese (ja)
Other versions
JPS545276B2 (enrdf_load_stackoverflow
Inventor
Tokuro Omachi
Hideho Saito
Yoshitaka Furukawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP5720676A priority Critical patent/JPS52141189A/ja
Publication of JPS52141189A publication Critical patent/JPS52141189A/ja
Publication of JPS545276B2 publication Critical patent/JPS545276B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Weting (AREA)
  • Semiconductor Lasers (AREA)
JP5720676A 1976-05-20 1976-05-20 Production of distribution feedback type semiconductor laser Granted JPS52141189A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5720676A JPS52141189A (en) 1976-05-20 1976-05-20 Production of distribution feedback type semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5720676A JPS52141189A (en) 1976-05-20 1976-05-20 Production of distribution feedback type semiconductor laser

Publications (2)

Publication Number Publication Date
JPS52141189A true JPS52141189A (en) 1977-11-25
JPS545276B2 JPS545276B2 (enrdf_load_stackoverflow) 1979-03-15

Family

ID=13049020

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5720676A Granted JPS52141189A (en) 1976-05-20 1976-05-20 Production of distribution feedback type semiconductor laser

Country Status (1)

Country Link
JP (1) JPS52141189A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2625036A1 (fr) * 1987-12-18 1989-06-23 Thomson Csf Procede de realisation d'un reseau de diffraction sur un materiau semi-conducteur, et dispositif opto-electronique comportant un reseau de diffraction realise selon ce procede

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
APPLIED PHYSICS LETTERS#N11=1975 *
APPLIED PHYSICS LETTERS#N3=1975 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2625036A1 (fr) * 1987-12-18 1989-06-23 Thomson Csf Procede de realisation d'un reseau de diffraction sur un materiau semi-conducteur, et dispositif opto-electronique comportant un reseau de diffraction realise selon ce procede

Also Published As

Publication number Publication date
JPS545276B2 (enrdf_load_stackoverflow) 1979-03-15

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