JPS545276B2 - - Google Patents

Info

Publication number
JPS545276B2
JPS545276B2 JP5720676A JP5720676A JPS545276B2 JP S545276 B2 JPS545276 B2 JP S545276B2 JP 5720676 A JP5720676 A JP 5720676A JP 5720676 A JP5720676 A JP 5720676A JP S545276 B2 JPS545276 B2 JP S545276B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP5720676A
Other languages
Japanese (ja)
Other versions
JPS52141189A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP5720676A priority Critical patent/JPS52141189A/ja
Publication of JPS52141189A publication Critical patent/JPS52141189A/ja
Publication of JPS545276B2 publication Critical patent/JPS545276B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Weting (AREA)
  • Semiconductor Lasers (AREA)
JP5720676A 1976-05-20 1976-05-20 Production of distribution feedback type semiconductor laser Granted JPS52141189A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5720676A JPS52141189A (en) 1976-05-20 1976-05-20 Production of distribution feedback type semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5720676A JPS52141189A (en) 1976-05-20 1976-05-20 Production of distribution feedback type semiconductor laser

Publications (2)

Publication Number Publication Date
JPS52141189A JPS52141189A (en) 1977-11-25
JPS545276B2 true JPS545276B2 (enrdf_load_stackoverflow) 1979-03-15

Family

ID=13049020

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5720676A Granted JPS52141189A (en) 1976-05-20 1976-05-20 Production of distribution feedback type semiconductor laser

Country Status (1)

Country Link
JP (1) JPS52141189A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2625036B1 (fr) * 1987-12-18 1990-10-26 Thomson Csf Procede de realisation d'un reseau de diffraction sur un materiau semi-conducteur, et dispositif opto-electronique comportant un reseau de diffraction realise selon ce procede

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
APPLIED PHYSICS LETTERS#N11=1975 *
APPLIED PHYSICS LETTERS#N3=1975 *

Also Published As

Publication number Publication date
JPS52141189A (en) 1977-11-25

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