JPS52135684A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS52135684A JPS52135684A JP5214676A JP5214676A JPS52135684A JP S52135684 A JPS52135684 A JP S52135684A JP 5214676 A JP5214676 A JP 5214676A JP 5214676 A JP5214676 A JP 5214676A JP S52135684 A JPS52135684 A JP S52135684A
- Authority
- JP
- Japan
- Prior art keywords
- high concentration
- production
- semiconductor device
- film containing
- impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5214676A JPS52135684A (en) | 1976-05-10 | 1976-05-10 | Production of semiconductor device |
US05/738,841 US4063973A (en) | 1975-11-10 | 1976-11-04 | Method of making a semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5214676A JPS52135684A (en) | 1976-05-10 | 1976-05-10 | Production of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS52135684A true JPS52135684A (en) | 1977-11-12 |
JPS5619107B2 JPS5619107B2 (enrdf_load_stackoverflow) | 1981-05-06 |
Family
ID=12906727
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5214676A Granted JPS52135684A (en) | 1975-11-10 | 1976-05-10 | Production of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52135684A (enrdf_load_stackoverflow) |
-
1976
- 1976-05-10 JP JP5214676A patent/JPS52135684A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5619107B2 (enrdf_load_stackoverflow) | 1981-05-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5324277A (en) | Semiconductor devic e and its production | |
JPS5331964A (en) | Production of semiconductor substrates | |
JPS52135684A (en) | Production of semiconductor device | |
JPS52139376A (en) | Production of semiconductor device | |
JPS52109369A (en) | Manufacture of semiconductor device | |
JPS5379378A (en) | Semoconductor davice and its production | |
JPS52124860A (en) | Electrode formation method for semiconductor devices | |
JPS5317068A (en) | Semiconductor device and its production | |
JPS52141573A (en) | Manufacture of semiconductor device | |
JPS531471A (en) | Manufacture for semiconductor device | |
JPS5377168A (en) | Production of semiconductor device | |
JPS5380160A (en) | Manufacture of substrate for semiconductor device | |
JPS5327372A (en) | Production of s emiconductor device | |
JPS538081A (en) | Production of semiconductor device | |
JPS5317286A (en) | Production of semiconductor device | |
JPS5372473A (en) | Manufacture of mis type semicondctor device | |
JPS5384690A (en) | Field effect transistor | |
JPS5354972A (en) | Production of semiconductor device | |
JPS5389375A (en) | Production of semiconductor device | |
JPS5365086A (en) | Production of semiconductor device | |
JPS5287359A (en) | Production of semiconductor device | |
JPS5372482A (en) | Manufacture for semiconductor device | |
JPS52154344A (en) | Impurity diffusion method | |
JPS5259589A (en) | Production of semiconductor device | |
JPS5428566A (en) | Manufacture of semiconductor device |