JPS52128066A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS52128066A JPS52128066A JP4510076A JP4510076A JPS52128066A JP S52128066 A JPS52128066 A JP S52128066A JP 4510076 A JP4510076 A JP 4510076A JP 4510076 A JP4510076 A JP 4510076A JP S52128066 A JPS52128066 A JP S52128066A
- Authority
- JP
- Japan
- Prior art keywords
- manufacture
- semiconductor device
- substrate
- injecting
- changing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/98—Utilizing process equivalents or options
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Weting (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4510076A JPS52128066A (en) | 1976-04-20 | 1976-04-20 | Manufacture of semiconductor device |
US05/787,427 US4108715A (en) | 1976-04-20 | 1977-04-14 | Method for machining surfaces of semiconductor substrates |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4510076A JPS52128066A (en) | 1976-04-20 | 1976-04-20 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS52128066A true JPS52128066A (en) | 1977-10-27 |
Family
ID=12709864
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4510076A Pending JPS52128066A (en) | 1976-04-20 | 1976-04-20 | Manufacture of semiconductor device |
Country Status (2)
Country | Link |
---|---|
US (1) | US4108715A (ja) |
JP (1) | JPS52128066A (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5650514A (en) * | 1979-10-01 | 1981-05-07 | Mitsubishi Electric Corp | Formation of fine pattern |
JPS6328067A (ja) * | 1986-07-22 | 1988-02-05 | Sony Corp | 半導体装置の製造方法 |
JPH07126905A (ja) * | 1993-10-25 | 1995-05-16 | Kijima:Kk | 手袋の製造方法 |
JP2008300833A (ja) * | 2007-05-29 | 2008-12-11 | Qimonda Ag | 基板上または基板内に構造物を形成する方法、サブリソグラフィック構造物を生成するためのイメージング層、サブリソグラフィックパターンを反転させる方法、構造物を製造することによって得られるデバイス |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1588669A (en) * | 1978-05-30 | 1981-04-29 | Standard Telephones Cables Ltd | Silicon transducer |
JPS5839374B2 (ja) * | 1978-12-26 | 1983-08-30 | 松下電器産業株式会社 | 半導体基板の処理方法 |
JPS5656636A (en) * | 1979-10-13 | 1981-05-18 | Mitsubishi Electric Corp | Processing method of fine pattern |
JPS5679449A (en) * | 1979-11-30 | 1981-06-30 | Mitsubishi Electric Corp | Production of semiconductor device |
US4343675A (en) * | 1980-09-30 | 1982-08-10 | The United States Of America As Represented By The United States Department Of Energy | Method of manufacturing hollow members having uniform wall thickness through use of ablation |
US4343676A (en) * | 1981-03-26 | 1982-08-10 | Rca Corporation | Etching a semiconductor material and automatically stopping same |
US4377437A (en) * | 1981-05-22 | 1983-03-22 | Bell Telephone Laboratories, Incorporated | Device lithography by selective ion implantation |
US4515654A (en) * | 1982-07-06 | 1985-05-07 | General Electric Company | Method for making semiconductor devices utilizing eutectic masks |
JPS59136977A (ja) * | 1983-01-26 | 1984-08-06 | Hitachi Ltd | 圧力感知半導体装置とその製造法 |
NL8301262A (nl) * | 1983-04-11 | 1984-11-01 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting, waarbij met behulp van ionenimplantatie patronen worden aangebracht in een laag siliciumnitride. |
US4554728A (en) * | 1984-06-27 | 1985-11-26 | International Business Machines Corporation | Simplified planarization process for polysilicon filled trenches |
NL8402859A (nl) * | 1984-09-18 | 1986-04-16 | Philips Nv | Werkwijze voor het vervaardigen van submicrongroeven in bijvoorbeeld halfgeleidermateriaal en met deze werkwijze verkregen inrichtingen. |
US4952446A (en) * | 1986-02-10 | 1990-08-28 | Cornell Research Foundation, Inc. | Ultra-thin semiconductor membranes |
US4946735A (en) * | 1986-02-10 | 1990-08-07 | Cornell Research Foundation, Inc. | Ultra-thin semiconductor membranes |
US5136344A (en) * | 1988-11-02 | 1992-08-04 | Universal Energy Systems, Inc. | High energy ion implanted silicon on insulator structure |
US5436174A (en) * | 1993-01-25 | 1995-07-25 | North Carolina State University | Method of forming trenches in monocrystalline silicon carbide |
US6309975B1 (en) | 1997-03-14 | 2001-10-30 | Micron Technology, Inc. | Methods of making implanted structures |
US20150206789A1 (en) * | 2014-01-17 | 2015-07-23 | Nanya Technology Corporation | Method of modifying polysilicon layer through nitrogen incorporation for isolation structure |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2989385A (en) * | 1957-05-14 | 1961-06-20 | Bell Telephone Labor Inc | Process for ion bombarding and etching metal |
US3976511A (en) * | 1975-06-30 | 1976-08-24 | Ibm Corporation | Method for fabricating integrated circuit structures with full dielectric isolation by ion bombardment |
US4026740A (en) * | 1975-10-29 | 1977-05-31 | Intel Corporation | Process for fabricating narrow polycrystalline silicon members |
-
1976
- 1976-04-20 JP JP4510076A patent/JPS52128066A/ja active Pending
-
1977
- 1977-04-14 US US05/787,427 patent/US4108715A/en not_active Expired - Lifetime
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5650514A (en) * | 1979-10-01 | 1981-05-07 | Mitsubishi Electric Corp | Formation of fine pattern |
JPS6328067A (ja) * | 1986-07-22 | 1988-02-05 | Sony Corp | 半導体装置の製造方法 |
JPH07126905A (ja) * | 1993-10-25 | 1995-05-16 | Kijima:Kk | 手袋の製造方法 |
JP2008300833A (ja) * | 2007-05-29 | 2008-12-11 | Qimonda Ag | 基板上または基板内に構造物を形成する方法、サブリソグラフィック構造物を生成するためのイメージング層、サブリソグラフィックパターンを反転させる方法、構造物を製造することによって得られるデバイス |
Also Published As
Publication number | Publication date |
---|---|
US4108715A (en) | 1978-08-22 |
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