JPS52120776A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS52120776A JPS52120776A JP3724376A JP3724376A JPS52120776A JP S52120776 A JPS52120776 A JP S52120776A JP 3724376 A JP3724376 A JP 3724376A JP 3724376 A JP3724376 A JP 3724376A JP S52120776 A JPS52120776 A JP S52120776A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- slanted
- mos
- film
- main surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 238000009413 insulation Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Bipolar Transistors (AREA)
- Die Bonding (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3724376A JPS52120776A (en) | 1976-04-05 | 1976-04-05 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3724376A JPS52120776A (en) | 1976-04-05 | 1976-04-05 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS52120776A true JPS52120776A (en) | 1977-10-11 |
JPS5513592B2 JPS5513592B2 (enrdf_load_stackoverflow) | 1980-04-10 |
Family
ID=12492170
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3724376A Granted JPS52120776A (en) | 1976-04-05 | 1976-04-05 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52120776A (enrdf_load_stackoverflow) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5854672A (ja) * | 1981-09-28 | 1983-03-31 | Fujitsu Ltd | 半導体装置 |
US7205615B2 (en) | 2003-06-16 | 2007-04-17 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device having internal stress film |
US7985988B2 (en) | 2006-09-12 | 2011-07-26 | Panasonic Corporation | Semiconductor device having circuit blocks in a single crystal layer, and bumps on certain blocks |
-
1976
- 1976-04-05 JP JP3724376A patent/JPS52120776A/ja active Granted
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5854672A (ja) * | 1981-09-28 | 1983-03-31 | Fujitsu Ltd | 半導体装置 |
US7205615B2 (en) | 2003-06-16 | 2007-04-17 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device having internal stress film |
US7417289B2 (en) | 2003-06-16 | 2008-08-26 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device having internal stress film |
US7893501B2 (en) | 2003-06-16 | 2011-02-22 | Panasonic Corporation | Semiconductor device including MISFET having internal stress film |
US8203186B2 (en) | 2003-06-16 | 2012-06-19 | Panasonic Corporation | Semiconductor device including a stress film |
US8383486B2 (en) | 2003-06-16 | 2013-02-26 | Panasonic Corporation | Method of manufacturing a semiconductor device including a stress film |
US7985988B2 (en) | 2006-09-12 | 2011-07-26 | Panasonic Corporation | Semiconductor device having circuit blocks in a single crystal layer, and bumps on certain blocks |
US8330188B2 (en) | 2006-09-12 | 2012-12-11 | Panasonic Corporation | Semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS5513592B2 (enrdf_load_stackoverflow) | 1980-04-10 |
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