JPS5367361A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5367361A JPS5367361A JP14252776A JP14252776A JPS5367361A JP S5367361 A JPS5367361 A JP S5367361A JP 14252776 A JP14252776 A JP 14252776A JP 14252776 A JP14252776 A JP 14252776A JP S5367361 A JPS5367361 A JP S5367361A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- field region
- recoiling
- ion
- injection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE: To prevent effectively the surface inversion of the field region of the semiconductor device which has an insulating film, having metallic atoms introduced in its surface or inside through an ion-recoiling injection, in the field region and contains a field effect transistor.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14252776A JPS5367361A (en) | 1976-11-27 | 1976-11-27 | Semiconductor device |
GB47608/77A GB1596184A (en) | 1976-11-27 | 1977-11-16 | Method of manufacturing semiconductor devices |
DE19772752698 DE2752698A1 (en) | 1976-11-27 | 1977-11-25 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES |
NL7713004A NL7713004A (en) | 1976-11-27 | 1977-11-25 | PROCESS FOR MANUFACTURING SEMI-GUIDE DEVICES. |
US06/109,100 US4297782A (en) | 1976-11-27 | 1980-01-02 | Method of manufacturing semiconductor devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14252776A JPS5367361A (en) | 1976-11-27 | 1976-11-27 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5367361A true JPS5367361A (en) | 1978-06-15 |
JPS5525512B2 JPS5525512B2 (en) | 1980-07-07 |
Family
ID=15317421
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14252776A Granted JPS5367361A (en) | 1976-11-27 | 1976-11-27 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5367361A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4643777A (en) * | 1983-12-20 | 1987-02-17 | Kabushiki Kaisha Toshiba | Method of manufacturing a semiconductor device comprising resistors of high and low resistances |
JPS62263658A (en) * | 1986-05-12 | 1987-11-16 | Toshiba Corp | Semiconductor device and manufacture thereof |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5861667U (en) * | 1981-10-22 | 1983-04-26 | いすゞ自動車株式会社 | Handbrake operating device |
-
1976
- 1976-11-27 JP JP14252776A patent/JPS5367361A/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4643777A (en) * | 1983-12-20 | 1987-02-17 | Kabushiki Kaisha Toshiba | Method of manufacturing a semiconductor device comprising resistors of high and low resistances |
JPS62263658A (en) * | 1986-05-12 | 1987-11-16 | Toshiba Corp | Semiconductor device and manufacture thereof |
Also Published As
Publication number | Publication date |
---|---|
JPS5525512B2 (en) | 1980-07-07 |
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