JPS5211887A - Semiconductor photoelectric device and its manufacturing method - Google Patents

Semiconductor photoelectric device and its manufacturing method

Info

Publication number
JPS5211887A
JPS5211887A JP50087399A JP8739975A JPS5211887A JP S5211887 A JPS5211887 A JP S5211887A JP 50087399 A JP50087399 A JP 50087399A JP 8739975 A JP8739975 A JP 8739975A JP S5211887 A JPS5211887 A JP S5211887A
Authority
JP
Japan
Prior art keywords
manufacturing
photoelectric device
semiconductor photoelectric
phototransistor
shallower
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50087399A
Other languages
Japanese (ja)
Inventor
Mitsuo Yoshida
Keiji Kamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP50087399A priority Critical patent/JPS5211887A/en
Publication of JPS5211887A publication Critical patent/JPS5211887A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: By obtaining the Si phototransistor of which junction depth of the optical base area is more shallower then that just under the emitter area, the spectral sensitivity of the peak wavelength 9000 Å and the dark current shall be reduced.
COPYRIGHT: (C)1977,JPO&Japio
JP50087399A 1975-07-18 1975-07-18 Semiconductor photoelectric device and its manufacturing method Pending JPS5211887A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50087399A JPS5211887A (en) 1975-07-18 1975-07-18 Semiconductor photoelectric device and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50087399A JPS5211887A (en) 1975-07-18 1975-07-18 Semiconductor photoelectric device and its manufacturing method

Publications (1)

Publication Number Publication Date
JPS5211887A true JPS5211887A (en) 1977-01-29

Family

ID=13913785

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50087399A Pending JPS5211887A (en) 1975-07-18 1975-07-18 Semiconductor photoelectric device and its manufacturing method

Country Status (1)

Country Link
JP (1) JPS5211887A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS554920A (en) * 1978-06-26 1980-01-14 Hitachi Ltd Semi-conductor device and manufacturing method
JPS55138493U (en) * 1973-05-14 1980-10-02
JPS56120388A (en) * 1980-02-29 1981-09-21 Mitsubishi Heavy Ind Ltd Automatic stamping method and its device
JPS5822916A (en) * 1981-08-04 1983-02-10 Sugino Mach:Kk Piston measuring device
JPS6392485A (en) * 1986-10-07 1988-04-22 Oorueyaa Kk Marking press
JP2021519519A (en) * 2018-03-29 2021-08-10 ヴィシャイ セミコンダクター ゲゼルシャフト ミット ベシュレンクテル ハフツングＶｉｓｈａｙ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ ＧｍｂＨ Photosensitive semiconductor parts and methods for forming photosensitive semiconductor parts

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55138493U (en) * 1973-05-14 1980-10-02
JPS563118Y2 (en) * 1973-05-14 1981-01-23
JPS554920A (en) * 1978-06-26 1980-01-14 Hitachi Ltd Semi-conductor device and manufacturing method
JPS56120388A (en) * 1980-02-29 1981-09-21 Mitsubishi Heavy Ind Ltd Automatic stamping method and its device
JPS5822916A (en) * 1981-08-04 1983-02-10 Sugino Mach:Kk Piston measuring device
JPS6392485A (en) * 1986-10-07 1988-04-22 Oorueyaa Kk Marking press
JPH0333514B2 (en) * 1986-10-07 1991-05-17 Oorueyaa Kk
JP2021519519A (en) * 2018-03-29 2021-08-10 ヴィシャイ セミコンダクター ゲゼルシャフト ミット ベシュレンクテル ハフツングＶｉｓｈａｙ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ ＧｍｂＨ Photosensitive semiconductor parts and methods for forming photosensitive semiconductor parts
US11876144B2 (en) 2018-03-29 2024-01-16 Vishay Semiconductor Gmbh Photosensitive semiconductor component, method for forming a photosensitive semiconductor component

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