JPS5211871A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5211871A
JPS5211871A JP50087396A JP8739675A JPS5211871A JP S5211871 A JPS5211871 A JP S5211871A JP 50087396 A JP50087396 A JP 50087396A JP 8739675 A JP8739675 A JP 8739675A JP S5211871 A JPS5211871 A JP S5211871A
Authority
JP
Japan
Prior art keywords
semiconductor device
parasiticly
confining
cmos
shall
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50087396A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6118865B2 (enrdf_load_stackoverflow
Inventor
Kazuo Sato
Mitsuhiko Ueno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP50087396A priority Critical patent/JPS5211871A/ja
Priority to GB29281/76A priority patent/GB1559581A/en
Priority to FR7621992A priority patent/FR2318502A1/fr
Priority to CH923776A priority patent/CH611740A5/xx
Priority to DE2632420A priority patent/DE2632420C2/de
Publication of JPS5211871A publication Critical patent/JPS5211871A/ja
Priority to US05/851,955 priority patent/US4149176A/en
Publication of JPS6118865B2 publication Critical patent/JPS6118865B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP50087396A 1975-07-18 1975-07-18 Semiconductor device Granted JPS5211871A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP50087396A JPS5211871A (en) 1975-07-18 1975-07-18 Semiconductor device
GB29281/76A GB1559581A (en) 1975-07-18 1976-07-14 Complementary mosfet device
FR7621992A FR2318502A1 (fr) 1975-07-18 1976-07-19 Dispositif perfectionne a transistors a effet de champ a metal-oxyde-semi-conducteur complementaire
CH923776A CH611740A5 (en) 1975-07-18 1976-07-19 Semiconductor circuit
DE2632420A DE2632420C2 (de) 1975-07-18 1976-07-19 Halbleitervorrichtung
US05/851,955 US4149176A (en) 1975-07-18 1977-11-16 Complementary MOSFET device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50087396A JPS5211871A (en) 1975-07-18 1975-07-18 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5211871A true JPS5211871A (en) 1977-01-29
JPS6118865B2 JPS6118865B2 (enrdf_load_stackoverflow) 1986-05-14

Family

ID=13913706

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50087396A Granted JPS5211871A (en) 1975-07-18 1975-07-18 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5211871A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53133382A (en) * 1977-04-27 1978-11-21 Nec Corp Complementary type mos integrated circuit

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4830189A (enrdf_load_stackoverflow) * 1971-08-19 1973-04-20

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4830189A (enrdf_load_stackoverflow) * 1971-08-19 1973-04-20

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53133382A (en) * 1977-04-27 1978-11-21 Nec Corp Complementary type mos integrated circuit

Also Published As

Publication number Publication date
JPS6118865B2 (enrdf_load_stackoverflow) 1986-05-14

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