JPS52111342A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS52111342A
JPS52111342A JP2852376A JP2852376A JPS52111342A JP S52111342 A JPS52111342 A JP S52111342A JP 2852376 A JP2852376 A JP 2852376A JP 2852376 A JP2852376 A JP 2852376A JP S52111342 A JPS52111342 A JP S52111342A
Authority
JP
Japan
Prior art keywords
memory device
semiconductor memory
memory
operate
multiple bit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2852376A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5727557B2 (enExample
Inventor
Yasoji Suzuki
Kiyobumi Ochii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP2852376A priority Critical patent/JPS52111342A/ja
Priority to US05/777,664 priority patent/US4151610A/en
Priority to GB10895/77A priority patent/GB1521955A/en
Priority to DE2711523A priority patent/DE2711523C2/de
Publication of JPS52111342A publication Critical patent/JPS52111342A/ja
Publication of JPS5727557B2 publication Critical patent/JPS5727557B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
JP2852376A 1976-03-16 1976-03-16 Semiconductor memory device Granted JPS52111342A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2852376A JPS52111342A (en) 1976-03-16 1976-03-16 Semiconductor memory device
US05/777,664 US4151610A (en) 1976-03-16 1977-03-15 High density semiconductor memory device formed in a well and having more than one capacitor
GB10895/77A GB1521955A (en) 1976-03-16 1977-03-15 Semiconductor memory device
DE2711523A DE2711523C2 (de) 1976-03-16 1977-03-16 Dynamische Halbleiterspeichervorrichtung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2852376A JPS52111342A (en) 1976-03-16 1976-03-16 Semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS52111342A true JPS52111342A (en) 1977-09-19
JPS5727557B2 JPS5727557B2 (enExample) 1982-06-11

Family

ID=12251020

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2852376A Granted JPS52111342A (en) 1976-03-16 1976-03-16 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS52111342A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018190480A (ja) * 2017-05-04 2018-11-29 朝景 湯 ランダム・アクセス・メモリ及び関連する回路、方法及びシステム

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6182060A (ja) * 1984-09-26 1986-04-25 Honda Motor Co Ltd 動力伝達機構

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3533089A (en) * 1969-05-16 1970-10-06 Shell Oil Co Single-rail mosfet memory with capacitive storage

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3533089A (en) * 1969-05-16 1970-10-06 Shell Oil Co Single-rail mosfet memory with capacitive storage

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018190480A (ja) * 2017-05-04 2018-11-29 朝景 湯 ランダム・アクセス・メモリ及び関連する回路、方法及びシステム

Also Published As

Publication number Publication date
JPS5727557B2 (enExample) 1982-06-11

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