JPS5210681A - Method for treating surface of semiconductor substrate - Google Patents

Method for treating surface of semiconductor substrate

Info

Publication number
JPS5210681A
JPS5210681A JP8688375A JP8688375A JPS5210681A JP S5210681 A JPS5210681 A JP S5210681A JP 8688375 A JP8688375 A JP 8688375A JP 8688375 A JP8688375 A JP 8688375A JP S5210681 A JPS5210681 A JP S5210681A
Authority
JP
Japan
Prior art keywords
semiconductor substrate
treating surface
defect
applying
vapor phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8688375A
Other languages
English (en)
Japanese (ja)
Other versions
JPS576692B2 (enrdf_load_stackoverflow
Inventor
Katsunobu Nakagawa
Yoshimi Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP8688375A priority Critical patent/JPS5210681A/ja
Publication of JPS5210681A publication Critical patent/JPS5210681A/ja
Publication of JPS576692B2 publication Critical patent/JPS576692B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP8688375A 1975-07-15 1975-07-15 Method for treating surface of semiconductor substrate Granted JPS5210681A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8688375A JPS5210681A (en) 1975-07-15 1975-07-15 Method for treating surface of semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8688375A JPS5210681A (en) 1975-07-15 1975-07-15 Method for treating surface of semiconductor substrate

Publications (2)

Publication Number Publication Date
JPS5210681A true JPS5210681A (en) 1977-01-27
JPS576692B2 JPS576692B2 (enrdf_load_stackoverflow) 1982-02-06

Family

ID=13899218

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8688375A Granted JPS5210681A (en) 1975-07-15 1975-07-15 Method for treating surface of semiconductor substrate

Country Status (1)

Country Link
JP (1) JPS5210681A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58218122A (ja) * 1982-05-10 1983-12-19 Internatl Rectifier Corp Japan Ltd 半導体装置の製造方法
JPS6199347A (ja) * 1984-10-19 1986-05-17 Fujitsu Ltd 半導体装置の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58218122A (ja) * 1982-05-10 1983-12-19 Internatl Rectifier Corp Japan Ltd 半導体装置の製造方法
JPS6199347A (ja) * 1984-10-19 1986-05-17 Fujitsu Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS576692B2 (enrdf_load_stackoverflow) 1982-02-06

Similar Documents

Publication Publication Date Title
JPS5246784A (en) Process for production of semiconductor device
JPS5267969A (en) Manufacture of semiconductor unit
JPS5210681A (en) Method for treating surface of semiconductor substrate
JPS5373072A (en) Formation of oxidized film
JPS5248468A (en) Process for production of semiconductor device
JPS5434676A (en) Vapor growth method and apparatus for high-purity semiconductor layer
JPS5413777A (en) Photo resist coater of semiconductor wafers
JPS522273A (en) Method of treating semiconductor substrate
JPS533066A (en) Electrode formation method
JPS51131269A (en) Vapor phase propagation process and vapor phase propagation unit
JPS5244795A (en) Formation of silicon nitride film
JPS51135368A (en) Method of treating surface of semiconductor substrate
JPS5536927A (en) Manufacturing of semiconductor device
JPS5291645A (en) Surface treatment for semiconductor wafer
JPS526477A (en) Method for multi-layer film formation
JPS5216972A (en) Epitachisial growing method of semic-conductor of iii-v family chemica l compound
JPS53125776A (en) Manufacture for semiconductor device
JPS5395570A (en) Forming method of epitaxial layer
JPS5357753A (en) Diffusion layer formation method to semiconductor substrate
JPS5239369A (en) Method for fabrication of semiconductor substrate
JPS5247370A (en) Diffusion method
JPS5274281A (en) Production of semiconductor device
JPS5240076A (en) Process for production of bi-polar type semiconductor device
JPS51117871A (en) Semiconductor substrate processing method
JPS5242375A (en) Process for production of semiconductor device