JPS52103953A - Multi-layer liquid phase epitaxial method - Google Patents
Multi-layer liquid phase epitaxial methodInfo
- Publication number
- JPS52103953A JPS52103953A JP2034976A JP2034976A JPS52103953A JP S52103953 A JPS52103953 A JP S52103953A JP 2034976 A JP2034976 A JP 2034976A JP 2034976 A JP2034976 A JP 2034976A JP S52103953 A JPS52103953 A JP S52103953A
- Authority
- JP
- Japan
- Prior art keywords
- liquid phase
- layer liquid
- phase epitaxial
- epitaxial method
- points
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE: To form better quality multi-layered epitaxial layer by providing the temperature of the basic board higher by 0.1°C or more against the epitaxial solutions to be contacted, at each points which just precede the points where contact take place.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2034976A JPS52103953A (en) | 1976-02-26 | 1976-02-26 | Multi-layer liquid phase epitaxial method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2034976A JPS52103953A (en) | 1976-02-26 | 1976-02-26 | Multi-layer liquid phase epitaxial method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS52103953A true JPS52103953A (en) | 1977-08-31 |
Family
ID=12024637
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2034976A Pending JPS52103953A (en) | 1976-02-26 | 1976-02-26 | Multi-layer liquid phase epitaxial method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52103953A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60235792A (en) * | 1984-05-04 | 1985-11-22 | Hitachi Cable Ltd | Device for liquid phase growth |
-
1976
- 1976-02-26 JP JP2034976A patent/JPS52103953A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60235792A (en) * | 1984-05-04 | 1985-11-22 | Hitachi Cable Ltd | Device for liquid phase growth |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5293285A (en) | Structure for semiconductor device | |
JPS52103953A (en) | Multi-layer liquid phase epitaxial method | |
JPS535569A (en) | Liquid-phase epitaxial growth method | |
JPS51130442A (en) | A method for double-side coating | |
JPS5382173A (en) | Positioning method | |
JPS522986A (en) | Semi submerged boat | |
JPS5310266A (en) | Production of soldred semiconductor wafers | |
JPS5231665A (en) | Growing method of semiconductor crystal | |
JPS52153923A (en) | Preparation of 2-amino-4-alkoxyphenols | |
JPS5335375A (en) | Heating method | |
JPS5351964A (en) | Selective growth method for semiconductor crystal | |
JPS5334465A (en) | Manufacture for semiconductor epitaxial grown layer | |
JPS52112276A (en) | Liquid-phase epitaxial growth system | |
JPS5384554A (en) | Manufacture for semiconductor device | |
JPS533785A (en) | Thin film solar battery | |
JPS5425088A (en) | Icebreaker | |
JPS52105788A (en) | Semiconductor device manufacturing method | |
JPS52124377A (en) | Temperature detector | |
JPS51117350A (en) | Manufacturing method for heat conducting material for heat exchangers | |
JPS52124179A (en) | Thermo-sensitive wire | |
JPS5350500A (en) | Mica lamination | |
JPS5223265A (en) | Method of processing semiconductor materials | |
JPS5321578A (en) | Function inspection method of semiconductor elements | |
JPS5399767A (en) | Semic0nductor element of iii-v group compound | |
JPS52143355A (en) | Bearing apparatus |