JPS516679A - - Google Patents
Info
- Publication number
- JPS516679A JPS516679A JP49071969A JP7196974A JPS516679A JP S516679 A JPS516679 A JP S516679A JP 49071969 A JP49071969 A JP 49071969A JP 7196974 A JP7196974 A JP 7196974A JP S516679 A JPS516679 A JP S516679A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/024—Defect control-gettering and annealing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/91—Controlling charging state at semiconductor-insulator interface
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- High Energy & Nuclear Physics (AREA)
- Manufacturing & Machinery (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Ceramic Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US00375283A US3849204A (en) | 1973-06-29 | 1973-06-29 | Process for the elimination of interface states in mios structures |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS516679A true JPS516679A (ja) | 1976-01-20 |
JPS5433917B2 JPS5433917B2 (ja) | 1979-10-23 |
Family
ID=23480255
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7196974A Expired JPS5433917B2 (ja) | 1973-06-29 | 1974-06-25 |
Country Status (5)
Country | Link |
---|---|
US (1) | US3849204A (ja) |
JP (1) | JPS5433917B2 (ja) |
CA (1) | CA994924A (ja) |
DE (1) | DE2422195C2 (ja) |
GB (1) | GB1454237A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02218132A (ja) * | 1989-02-20 | 1990-08-30 | Nec Corp | 半導体装置の製造方法 |
JP2009120482A (ja) * | 1996-09-30 | 2009-06-04 | Xerox Corp | 酸化物カプセル化材料の水素化の強化方法 |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3923559A (en) * | 1975-01-13 | 1975-12-02 | Bell Telephone Labor Inc | Use of trapped hydrogen for annealing metal-oxide-semiconductor devices |
DE2507366C3 (de) * | 1975-02-20 | 1980-06-26 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Unterdrückung parasitärer Schaltungselemente |
US4047976A (en) * | 1976-06-21 | 1977-09-13 | Motorola, Inc. | Method for manufacturing a high-speed semiconductor device |
US4364779A (en) * | 1980-08-04 | 1982-12-21 | Bell Telephone Laboratories, Incorporated | Fabrication of semiconductor devices including double annealing steps for radiation hardening |
US4447272A (en) * | 1982-11-22 | 1984-05-08 | The United States Of America As Represented By The Secretary Of The Navy | Method for fabricating MNOS structures utilizing hydrogen ion implantation |
US4522657A (en) * | 1983-10-20 | 1985-06-11 | Westinghouse Electric Corp. | Low temperature process for annealing shallow implanted N+/P junctions |
JPH0687503B2 (ja) * | 1987-03-11 | 1994-11-02 | 株式会社日立製作所 | 薄膜半導体装置 |
JP2589327B2 (ja) * | 1987-11-14 | 1997-03-12 | 株式会社リコー | 薄膜トランジスタの製造方法 |
DE4306565C2 (de) * | 1993-03-03 | 1995-09-28 | Telefunken Microelectron | Verfahren zur Herstellung eines blauempfindlichen Photodetektors |
US5407850A (en) * | 1993-06-29 | 1995-04-18 | Digital Equipment Corporation | SOI transistor threshold optimization by use of gate oxide having positive charge |
US5387530A (en) * | 1993-06-29 | 1995-02-07 | Digital Equipment Corporation | Threshold optimization for soi transistors through use of negative charge in the gate oxide |
JPH07153769A (ja) * | 1993-11-30 | 1995-06-16 | Hitachi Ltd | 半導体集積回路装置の製造方法および製造装置 |
US5897346A (en) * | 1994-02-28 | 1999-04-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing a thin film transistor |
US5620906A (en) * | 1994-02-28 | 1997-04-15 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing semiconductor device by introducing hydrogen ions |
US6489219B1 (en) * | 1995-11-09 | 2002-12-03 | Micron Technology, Inc. | Method of alloying a semiconductor device |
US20020031920A1 (en) | 1996-01-16 | 2002-03-14 | Lyding Joseph W. | Deuterium treatment of semiconductor devices |
US5872387A (en) * | 1996-01-16 | 1999-02-16 | The Board Of Trustees Of The University Of Illinois | Deuterium-treated semiconductor devices |
JP3865145B2 (ja) * | 1996-01-26 | 2007-01-10 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US6071751A (en) * | 1997-04-28 | 2000-06-06 | Texas Instruments Incorporated | Deuterium sintering with rapid quenching |
US6328801B1 (en) | 1997-07-25 | 2001-12-11 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Method and system for recovering and recirculating a deuterium-containing gas |
US6143631A (en) | 1998-05-04 | 2000-11-07 | Micron Technology, Inc. | Method for controlling the morphology of deposited silicon on a silicon dioxide substrate and semiconductor devices incorporating such deposited silicon |
FR2784796B1 (fr) * | 1998-10-15 | 2001-11-23 | Commissariat Energie Atomique | Procede de realisation d'une couche de materiau enterree dans un autre materiau |
US6268269B1 (en) * | 1999-12-30 | 2001-07-31 | United Microelectronics Corp. | Method for fabricating an oxide layer on silicon with carbon ions introduced at the silicon/oxide interface in order to reduce hot carrier effects |
US6576522B2 (en) | 2000-12-08 | 2003-06-10 | Agere Systems Inc. | Methods for deuterium sintering |
US6603181B2 (en) * | 2001-01-16 | 2003-08-05 | International Business Machines Corporation | MOS device having a passivated semiconductor-dielectric interface |
DE10334353A1 (de) * | 2003-07-25 | 2005-02-17 | Forschungszentrum Jülich GmbH | Verfahren zur Herstellung eines Kontaktes und elektronisches Bauelement, umfassend derartige Kontakte |
US7407871B2 (en) * | 2006-09-05 | 2008-08-05 | Tech Semiconductor Singapore Pte Ltd | Method for passivation of plasma etch defects in DRAM devices |
KR20100060652A (ko) * | 2008-11-28 | 2010-06-07 | 주식회사 동부하이텍 | 반도체 소자의 제조 방법 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1095412A (ja) * | 1964-08-26 | |||
US3540925A (en) * | 1967-08-02 | 1970-11-17 | Rca Corp | Ion bombardment of insulated gate semiconductor devices |
US3513035A (en) * | 1967-11-01 | 1970-05-19 | Fairchild Camera Instr Co | Semiconductor device process for reducing surface recombination velocity |
US3590477A (en) * | 1968-12-19 | 1971-07-06 | Ibm | Method for fabricating insulated-gate field effect transistors having controlled operating characeristics |
DE2056947C3 (de) * | 1970-11-20 | 1975-12-18 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V., 8000 Muenchen | Verfahren zur Stabilisierung von Halbleiteranordnungen |
-
1973
- 1973-06-29 US US00375283A patent/US3849204A/en not_active Expired - Lifetime
-
1974
- 1974-05-08 DE DE2422195A patent/DE2422195C2/de not_active Expired
- 1974-05-16 GB GB2172674A patent/GB1454237A/en not_active Expired
- 1974-06-07 CA CA201,981A patent/CA994924A/en not_active Expired
- 1974-06-25 JP JP7196974A patent/JPS5433917B2/ja not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02218132A (ja) * | 1989-02-20 | 1990-08-30 | Nec Corp | 半導体装置の製造方法 |
JP2009120482A (ja) * | 1996-09-30 | 2009-06-04 | Xerox Corp | 酸化物カプセル化材料の水素化の強化方法 |
Also Published As
Publication number | Publication date |
---|---|
CA994924A (en) | 1976-08-10 |
JPS5433917B2 (ja) | 1979-10-23 |
DE2422195C2 (de) | 1986-02-06 |
GB1454237A (en) | 1976-11-03 |
DE2422195A1 (de) | 1975-01-16 |
US3849204A (en) | 1974-11-19 |