|
DE2241229C2
(de)
*
|
1972-08-22 |
1983-01-20 |
Leybold-Heraeus GmbH, 5000 Köln |
Vorrichtung zum Ätzen von Substraten durch eine Glimmentladung
|
|
FR2232832A1
(en)
*
|
1973-06-06 |
1975-01-03 |
Radiotechnique Compelec |
Discharge control in cathodic sputtering - using voltage variation on auxiliary insulated electrode to adjust gas supply
|
|
US3984301A
(en)
*
|
1973-08-11 |
1976-10-05 |
Nippon Electric Varian, Ltd. |
Sputter-etching method employing fluorohalogenohydrocarbon etching gas and a planar electrode for a glow discharge
|
|
US3943047A
(en)
*
|
1974-05-10 |
1976-03-09 |
Bell Telephone Laboratories, Incorporated |
Selective removal of material by sputter etching
|
|
US4169031A
(en)
*
|
1978-01-13 |
1979-09-25 |
Polyohm, Inc. |
Magnetron sputter cathode assembly
|
|
JPS5687672A
(en)
*
|
1979-12-15 |
1981-07-16 |
Anelva Corp |
Dry etching apparatus
|
|
US4333814A
(en)
*
|
1979-12-26 |
1982-06-08 |
Western Electric Company, Inc. |
Methods and apparatus for improving an RF excited reactive gas plasma
|
|
US4309267A
(en)
*
|
1980-07-21 |
1982-01-05 |
Bell Telephone Laboratories, Incorporated |
Reactive sputter etching apparatus
|
|
DE3045922A1
(de)
*
|
1980-12-05 |
1982-07-08 |
Siemens AG, 1000 Berlin und 8000 München |
Verfahren zum herstellen von strukturen von aus siliziden oder aus silizid-polysilizium bestehenden schichten durch reaktives sputteraetzen
|
|
US4362611A
(en)
*
|
1981-07-27 |
1982-12-07 |
International Business Machines Corporation |
Quadrupole R.F. sputtering system having an anode/cathode shield and a floating target shield
|
|
US4392932A
(en)
*
|
1981-11-12 |
1983-07-12 |
Varian Associates, Inc. |
Method for obtaining uniform etch by modulating bias on extension member around radio frequency etch table
|
|
US4392938A
(en)
*
|
1981-11-12 |
1983-07-12 |
Varian Associates, Inc. |
Radio frequency etch table with biased extension member
|
|
US4384938A
(en)
*
|
1982-05-03 |
1983-05-24 |
International Business Machines Corporation |
Reactive ion etching chamber
|
|
FR2550681B1
(fr)
*
|
1983-08-12 |
1985-12-06 |
Centre Nat Rech Scient |
Source d'ions a au moins deux chambres d'ionisation, en particulier pour la formation de faisceaux d'ions chimiquement reactifs
|
|
US4496448A
(en)
*
|
1983-10-13 |
1985-01-29 |
At&T Bell Laboratories |
Method for fabricating devices with DC bias-controlled reactive ion etching
|
|
US4600489A
(en)
*
|
1984-01-19 |
1986-07-15 |
Vac-Tec Systems, Inc. |
Method and apparatus for evaporation arc stabilization for non-permeable targets utilizing permeable stop ring
|
|
GB2159753B
(en)
*
|
1984-03-06 |
1988-09-07 |
Asm Fico Tooling |
Method and apparatus for cleaning lead pins before soldering operations
|
|
US4938859A
(en)
*
|
1984-07-31 |
1990-07-03 |
Vacuum Optics Corporation Of Japan |
Ion bombardment device with high frequency
|
|
JP2515731B2
(ja)
*
|
1985-10-25 |
1996-07-10 |
株式会社日立製作所 |
薄膜形成装置および薄膜形成方法
|
|
US4595484A
(en)
*
|
1985-12-02 |
1986-06-17 |
International Business Machines Corporation |
Reactive ion etching apparatus
|
|
WO1988001435A1
(en)
*
|
1986-08-13 |
1988-02-25 |
The Australian National University |
Improvements in reactive ion etching apparatus
|
|
JPS6454733A
(en)
*
|
1987-08-26 |
1989-03-02 |
Toshiba Corp |
Production device for semiconductor
|
|
JP3033104B2
(ja)
*
|
1989-11-17 |
2000-04-17 |
ソニー株式会社 |
エッチング方法
|
|
DE4025396A1
(de)
*
|
1990-08-10 |
1992-02-13 |
Leybold Ag |
Einrichtung fuer die herstellung eines plasmas
|
|
US5662770A
(en)
*
|
1993-04-16 |
1997-09-02 |
Micron Technology, Inc. |
Method and apparatus for improving etch uniformity in remote source plasma reactors with powered wafer chucks
|
|
JP2659919B2
(ja)
*
|
1994-01-13 |
1997-09-30 |
インターナショナル・ビジネス・マシーンズ・コーポレイション |
プラズマの不均一性を補正するプラズマ装置
|
|
WO1996031997A1
(fr)
*
|
1995-04-07 |
1996-10-10 |
Seiko Epson Corporation |
Equipement de traitement de surface
|
|
US7528386B2
(en)
*
|
2005-04-21 |
2009-05-05 |
Board Of Trustees Of University Of Illinois |
Submicron particle removal
|
|
JPWO2008053929A1
(ja)
*
|
2006-11-02 |
2010-02-25 |
東京エレクトロン株式会社 |
微小構造体の検査装置、微小構造体の検査方法及び基板保持装置
|