JPS5144396B2 - - Google Patents
Info
- Publication number
- JPS5144396B2 JPS5144396B2 JP50086241A JP8624175A JPS5144396B2 JP S5144396 B2 JPS5144396 B2 JP S5144396B2 JP 50086241 A JP50086241 A JP 50086241A JP 8624175 A JP8624175 A JP 8624175A JP S5144396 B2 JPS5144396 B2 JP S5144396B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
- H10F71/1253—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising at least three elements, e.g. HgCdTe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
- H10F30/2212—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group II-VI materials, e.g. HgCdTe infrared photodiodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F99/00—Subject matter not provided for in other groups of this subclass
-
- H10P14/69—
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/153—Solar cells-implantations-laser beam
Landscapes
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7427282A FR2281650A1 (fr) | 1974-08-06 | 1974-08-06 | Procede de fabrication d'une photodiode sensible aux rayonnements infrarouges et photodiode obtenue par ce procede |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5136088A JPS5136088A (show.php) | 1976-03-26 |
| JPS5144396B2 true JPS5144396B2 (show.php) | 1976-11-27 |
Family
ID=9142164
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50086241A Expired JPS5144396B2 (show.php) | 1974-08-06 | 1975-07-16 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3988774A (show.php) |
| JP (1) | JPS5144396B2 (show.php) |
| DE (1) | DE2517939C2 (show.php) |
| FR (1) | FR2281650A1 (show.php) |
| GB (1) | GB1508027A (show.php) |
| NL (1) | NL160991C (show.php) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2336804A1 (fr) * | 1975-12-23 | 1977-07-22 | Telecommunications Sa | Perfectionnements apportes aux dispositifs semi-conducteurs, notamment aux detecteurs photovoltaiques comprenant un substrat a base d'un alliage cdxhg1-xte, et procede de fabrication d'un tel dispositif perfectionne |
| US4037311A (en) * | 1976-07-14 | 1977-07-26 | U.S. Philips Corporation | Methods of manufacturing infra-red detector elements |
| FR2376513A1 (fr) * | 1976-12-31 | 1978-07-28 | Radiotechnique Compelec | Dispositif semiconducteur muni d'un film protecteur |
| JPS5455228A (en) * | 1977-10-10 | 1979-05-02 | Nippon Denso Co Ltd | Fuel injection pump for internal combustion engine |
| US4170781A (en) * | 1978-04-06 | 1979-10-09 | The United States Of America As Represented By The Secretary Of The Army | Photodiode and method of manufacture |
| EP0018744B1 (en) * | 1979-05-01 | 1984-07-18 | The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and | Radiation detectors |
| JPS56169376A (en) * | 1980-05-30 | 1981-12-26 | New Japan Radio Co Ltd | Light receiving semiconductor device |
| JPS5745289A (en) * | 1980-08-29 | 1982-03-15 | Fujitsu Ltd | Production of multidimentional semiconductor device |
| US4376663A (en) * | 1980-11-18 | 1983-03-15 | The United States Of America As Represented By The Secretary Of The Army | Method for growing an epitaxial layer of CdTe on an epitaxial layer of HgCdTe grown on a CdTe substrate |
| US4357620A (en) * | 1980-11-18 | 1982-11-02 | The United States Of America As Represented By The Secretary Of The Army | Liquid-phase epitaxial growth of cdTe on HgCdTe |
| US4465565A (en) * | 1983-03-28 | 1984-08-14 | Ford Aerospace & Communications Corporation | CdTe passivation of HgCdTe by electrochemical deposition |
| FR2592740B1 (fr) * | 1986-01-08 | 1988-03-18 | Commissariat Energie Atomique | Detecteur photovoltaique en hgcdte a heterojonction et son procede de fabrication |
| US4731640A (en) * | 1986-05-20 | 1988-03-15 | Westinghouse Electric Corp. | High resistance photoconductor structure for multi-element infrared detector arrays |
| FR2604298B1 (fr) * | 1986-09-19 | 1988-10-28 | Commissariat Energie Atomique | Procede de realisation d'une prise de contact electrique sur un substrat en hgcdte de conductivite p et application a la fabrication d'une diode n/p |
| US5936268A (en) * | 1988-03-29 | 1999-08-10 | Raytheon Company | Epitaxial passivation of group II-VI infrared photodetectors |
| US4956304A (en) * | 1988-04-07 | 1990-09-11 | Santa Barbara Research Center | Buried junction infrared photodetector process |
| US5880510A (en) * | 1988-05-11 | 1999-03-09 | Raytheon Company | Graded layer passivation of group II-VI infrared photodetectors |
| US4910154A (en) * | 1988-12-23 | 1990-03-20 | Ford Aerospace Corporation | Manufacture of monolithic infrared focal plane arrays |
| US4961098A (en) * | 1989-07-03 | 1990-10-02 | Santa Barbara Research Center | Heterojunction photodiode array |
| US5049962A (en) * | 1990-03-07 | 1991-09-17 | Santa Barbara Research Center | Control of optical crosstalk between adjacent photodetecting regions |
| JPH0492481A (ja) * | 1990-08-07 | 1992-03-25 | Mitsubishi Electric Corp | 光検知装置 |
| JP3029497B2 (ja) * | 1991-12-20 | 2000-04-04 | ローム株式会社 | フォトダイオードアレイおよびその製造法 |
| US5296384A (en) * | 1992-07-21 | 1994-03-22 | Santa Barbara Research Center | Bake-stable HgCdTe photodetector and method for fabricating same |
| EP0635892B1 (en) * | 1992-07-21 | 2002-06-26 | Raytheon Company | Bake-stable HgCdTe photodetector and method for fabricating same |
| US5633526A (en) * | 1992-11-01 | 1997-05-27 | Rohm Co., Ltd. | Photodiode array and method for manufacturing the same |
| JP2859789B2 (ja) * | 1992-11-13 | 1999-02-24 | ローム株式会社 | フォトダイオードアレイおよびその製法 |
| US20120181545A1 (en) * | 2009-09-30 | 2012-07-19 | Sharp Kabushiki Kaisha | Semiconductor device and method for producing same, and display device provided with semiconductor device |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1614435B2 (de) * | 1967-02-23 | 1979-05-23 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Herstellen von aus Germanium bestehenden, doppeldiffundierten Halbleiteranordnungen |
| US3576478A (en) * | 1969-07-22 | 1971-04-27 | Philco Ford Corp | Igfet comprising n-type silicon substrate, silicon oxide gate insulator and p-type polycrystalline silicon gate electrode |
| DE1948884B2 (de) * | 1969-09-27 | 1971-09-30 | Verfahren zum beseitigen von inversionsschichten |
-
1974
- 1974-08-06 FR FR7427282A patent/FR2281650A1/fr active Granted
-
1975
- 1975-04-23 DE DE2517939A patent/DE2517939C2/de not_active Expired
- 1975-04-28 US US05/572,225 patent/US3988774A/en not_active Expired - Lifetime
- 1975-05-23 GB GB22853/75A patent/GB1508027A/en not_active Expired
- 1975-06-10 NL NL7506863.A patent/NL160991C/xx not_active IP Right Cessation
- 1975-07-16 JP JP50086241A patent/JPS5144396B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2517939C2 (de) | 1982-06-09 |
| NL160991B (nl) | 1979-07-16 |
| FR2281650A1 (fr) | 1976-03-05 |
| NL7506863A (nl) | 1976-02-10 |
| NL160991C (nl) | 1979-12-17 |
| DE2517939A1 (de) | 1976-02-26 |
| GB1508027A (en) | 1978-04-19 |
| FR2281650B1 (show.php) | 1976-12-31 |
| JPS5136088A (show.php) | 1976-03-26 |
| US3988774A (en) | 1976-10-26 |