JPS5129880B2 - - Google Patents

Info

Publication number
JPS5129880B2
JPS5129880B2 JP48030664A JP3066473A JPS5129880B2 JP S5129880 B2 JPS5129880 B2 JP S5129880B2 JP 48030664 A JP48030664 A JP 48030664A JP 3066473 A JP3066473 A JP 3066473A JP S5129880 B2 JPS5129880 B2 JP S5129880B2
Authority
JP
Japan
Prior art keywords
triethylindium
triethylgallium
mixture
compound
alkyl compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP48030664A
Other languages
English (en)
Japanese (ja)
Other versions
JPS49118700A (de
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP48030664A priority Critical patent/JPS5129880B2/ja
Priority to DE19742411603 priority patent/DE2411603C3/de
Priority to US450682A priority patent/US3867202A/en
Priority to GB1151774A priority patent/GB1462471A/en
Priority to FR7408715A priority patent/FR2221183B1/fr
Publication of JPS49118700A publication Critical patent/JPS49118700A/ja
Publication of JPS5129880B2 publication Critical patent/JPS5129880B2/ja
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
    • C07F5/06—Aluminium compounds
    • C07F5/061—Aluminium compounds with C-aluminium linkage
    • C07F5/064—Aluminium compounds with C-aluminium linkage compounds with an Al-Halogen linkage
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02392—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/056—Gallium arsenide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/065—Gp III-V generic compounds-processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/119—Phosphides of gallium or indium

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
JP48030664A 1973-03-15 1973-03-15 Expired JPS5129880B2 (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP48030664A JPS5129880B2 (de) 1973-03-15 1973-03-15
DE19742411603 DE2411603C3 (de) 1973-03-15 1974-03-11 Verfahren zum Herstellen einer epitaktischen Schicht auf einer Substratoberfläche
US450682A US3867202A (en) 1973-03-15 1974-03-13 Chemical vapor deposition for epitaxial growth
GB1151774A GB1462471A (en) 1973-03-15 1974-03-14 Chemical vapour deposition for epitaxial growth
FR7408715A FR2221183B1 (de) 1973-03-15 1974-03-14

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP48030664A JPS5129880B2 (de) 1973-03-15 1973-03-15

Publications (2)

Publication Number Publication Date
JPS49118700A JPS49118700A (de) 1974-11-13
JPS5129880B2 true JPS5129880B2 (de) 1976-08-27

Family

ID=12309998

Family Applications (1)

Application Number Title Priority Date Filing Date
JP48030664A Expired JPS5129880B2 (de) 1973-03-15 1973-03-15

Country Status (4)

Country Link
US (1) US3867202A (de)
JP (1) JPS5129880B2 (de)
FR (1) FR2221183B1 (de)
GB (1) GB1462471A (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5858316B2 (ja) * 1975-06-24 1983-12-24 日本電気株式会社 ３−５ ゾクカゴウブツノキソウセイチヨウホウホウ
US4147571A (en) * 1977-07-11 1979-04-03 Hewlett-Packard Company Method for vapor epitaxial deposition of III/V materials utilizing organometallic compounds and a halogen or halide in a hot wall system
FR2419585A1 (fr) * 1978-03-07 1979-10-05 Thomson Csf Procede d'obtention en phase gazeuse d'une couche epitaxiale de phosphure d'indium, et appareil d'application de ce procede
DE3172368D1 (en) * 1980-11-18 1985-10-24 British Telecomm Improvements in the manufacture of group iiib-vb compounds
US4716130A (en) * 1984-04-26 1987-12-29 American Telephone And Telegraph Company, At&T Bell Laboratories MOCVD of semi-insulating indium phosphide based compositions
JPS61260622A (ja) * 1985-05-15 1986-11-18 Res Dev Corp Of Japan ＧａＡｓ単結晶薄膜の成長法
JPS61291491A (ja) * 1985-06-19 1986-12-22 Mitsubishi Monsanto Chem Co りん化ひ化ガリウム混晶エピタキシヤルウエハ
JPS62132888A (ja) * 1985-12-03 1987-06-16 Sumitomo Chem Co Ltd 有機金属化合物の精製方法
US5250135A (en) * 1986-05-21 1993-10-05 British Telecommunications Public Limited Company Reagent source
JP2587623B2 (ja) * 1986-11-22 1997-03-05 新技術事業団 化合物半導体のエピタキシヤル結晶成長方法
US4830982A (en) * 1986-12-16 1989-05-16 American Telephone And Telegraph Company Method of forming III-V semi-insulating films using organo-metallic titanium dopant precursors
US4782034A (en) * 1987-06-04 1988-11-01 American Telephone And Telegraph Company, At&T Bell Laboratories Semi-insulating group III-V based compositions doped using bis arene titanium sources
US4774554A (en) * 1986-12-16 1988-09-27 American Telephone And Telegraph Company, At&T Bell Laboratories Semiconductor devices employing Ti-doped Group III-V epitaxial layer
US4999223A (en) * 1990-02-22 1991-03-12 Cvd Incorporated Chemical vapor deposition and chemicals with diarsines and polyarsines
US6273969B1 (en) 1998-01-07 2001-08-14 Rensselaer Polytechnic Institute Alloys and methods for their preparation

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3312570A (en) * 1961-05-29 1967-04-04 Monsanto Co Production of epitaxial films of semiconductor compound material
US3492175A (en) * 1965-12-17 1970-01-27 Texas Instruments Inc Method of doping semiconductor material
US3767472A (en) * 1971-06-30 1973-10-23 Ibm Growth of ternary compounds utilizing solid, liquid and vapor phases

Also Published As

Publication number Publication date
FR2221183B1 (de) 1977-06-17
DE2411603B2 (de) 1977-04-28
GB1462471A (en) 1977-01-26
DE2411603A1 (de) 1974-09-26
JPS49118700A (de) 1974-11-13
US3867202A (en) 1975-02-18
FR2221183A1 (de) 1974-10-11

Similar Documents

Publication Publication Date Title
FR2221183B1 (de)
GB1117592A (en) Novel organosilicon compounds and the preparation thereof
GB1025984A (en) The production of a silicon body with a pn-junction in it
BG33274A3 (en) Method for obtaining of ethers
GB1053278A (de)
BG31223A3 (en) Method for obtaining of tertiarj olephines
DE3275093D1 (en) Producing oximinosilanes, oximinogermanes and oximinostannanes
ES404095A1 (es) Un procedimiento para la recuperacion de oxido de etileno.
GB1412617A (en) Substituted aryl and aralkyl amides
GB1103075A (en) Processes for the preparation of 19-nor-steroids
JPS5671980A (en) Schottky barrier gate type field effect transistor and preparation method thereof
GB1032149A (en) A process for making siloxane polymers
GB1313980A (en) Process for obtaining hydrogenochlorosilanes
JPS5329072A (en) Gallium arsenide semiconductor device
GB1101594A (en) Novel monomeric episulphides
JPS5234668A (en) Gaseous phase growing process of semiconductor
ES474771A1 (es) Ÿprocedimiento de fabricacion de silicio policristalinoŸ
GB1230743A (de)
JPS528769A (en) Semiconductor device
JPS52147987A (en) Semiconductor device
GB997363A (en) Improvements in or relating to methods of producing a b compounds
ES288798A1 (es) Procedimiento para la producción de olefinas
ES408579A1 (es) Procedimiento para la preparacion de nuevas arilamidas y aralquilamidas.
JPS53123071A (en) Production of semi-insulating gaas epitaxial layers and formation of multilayer structure
GB1005466A (en) Process for the preparation of alkyl aluminium halides