JPS5125713B1 - - Google Patents
Info
- Publication number
- JPS5125713B1 JPS5125713B1 JP44061750A JP6175069A JPS5125713B1 JP S5125713 B1 JPS5125713 B1 JP S5125713B1 JP 44061750 A JP44061750 A JP 44061750A JP 6175069 A JP6175069 A JP 6175069A JP S5125713 B1 JPS5125713 B1 JP S5125713B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0821—Collector regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System further characterised by the doping material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/062—Gold diffusion
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/151—Simultaneous diffusion
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/904—Charge carrier lifetime control
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US75065068A | 1968-08-06 | 1968-08-06 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5125713B1 true JPS5125713B1 (ja) | 1976-08-02 |
Family
ID=25018702
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP44061750A Pending JPS5125713B1 (ja) | 1968-08-06 | 1969-08-06 | |
JP44061752A Pending JPS501636B1 (ja) | 1968-08-06 | 1969-08-06 | |
JP50077131A Pending JPS528673B1 (ja) | 1968-08-06 | 1975-06-24 |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP44061752A Pending JPS501636B1 (ja) | 1968-08-06 | 1969-08-06 | |
JP50077131A Pending JPS528673B1 (ja) | 1968-08-06 | 1975-06-24 |
Country Status (6)
Country | Link |
---|---|
US (1) | US3655457A (ja) |
JP (3) | JPS5125713B1 (ja) |
CA (1) | CA922024A (ja) |
DE (3) | DE1966237C3 (ja) |
FR (1) | FR2015121A1 (ja) |
GB (3) | GB1274725A (ja) |
Families Citing this family (56)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3853644A (en) * | 1969-09-18 | 1974-12-10 | Kogyo Gijutsuin | Transistor for super-high frequency and method of manufacturing it |
US3919006A (en) * | 1969-09-18 | 1975-11-11 | Yasuo Tarui | Method of manufacturing a lateral transistor |
BE759667A (fr) * | 1969-12-01 | 1971-06-01 | Philips Nv | Procede permettant la fabrication d'un dispositif semiconducteur, et dispositif semiconducteur obtenu par la mise en oeuvre de ce procede |
JPS4936514B1 (ja) * | 1970-05-13 | 1974-10-01 | ||
US3868722A (en) * | 1970-06-20 | 1975-02-25 | Philips Corp | Semiconductor device having at least two transistors and method of manufacturing same |
US3918996A (en) * | 1970-11-02 | 1975-11-11 | Texas Instruments Inc | Formation of integrated circuits using proton enhanced diffusion |
US3707765A (en) * | 1970-11-19 | 1973-01-02 | Motorola Inc | Method of making isolated semiconductor devices |
FR2123179B1 (ja) * | 1971-01-28 | 1974-02-15 | Commissariat Energie Atomique | |
US3895965A (en) * | 1971-05-24 | 1975-07-22 | Bell Telephone Labor Inc | Method of forming buried layers by ion implantation |
US3897274A (en) * | 1971-06-01 | 1975-07-29 | Texas Instruments Inc | Method of fabricating dielectrically isolated semiconductor structures |
US3775191A (en) * | 1971-06-28 | 1973-11-27 | Bell Canada Northern Electric | Modification of channel regions in insulated gate field effect transistors |
US3737346A (en) * | 1971-07-01 | 1973-06-05 | Bell Telephone Labor Inc | Semiconductor device fabrication using combination of energy beams for masking and impurity doping |
US3841917A (en) * | 1971-09-06 | 1974-10-15 | Philips Nv | Methods of manufacturing semiconductor devices |
JPS4879585A (ja) * | 1972-01-24 | 1973-10-25 | ||
DE2235865A1 (de) * | 1972-07-21 | 1974-01-31 | Licentia Gmbh | Halbleiteranordnung aus einer vielzahl von in einem gemeinsamen halbleiterkoerper untergebrachten halbleiterbauelementen |
CH560463A5 (ja) * | 1972-09-26 | 1975-03-27 | Siemens Ag | |
US3841918A (en) * | 1972-12-01 | 1974-10-15 | Bell Telephone Labor Inc | Method of integrated circuit fabrication |
US3981072A (en) * | 1973-05-25 | 1976-09-21 | Trw Inc. | Bipolar transistor construction method |
JPS5029186A (ja) * | 1973-07-17 | 1975-03-25 | ||
US3921199A (en) * | 1973-07-31 | 1975-11-18 | Texas Instruments Inc | Junction breakdown voltage by means of ion implanted compensation guard ring |
DE2341311C3 (de) * | 1973-08-16 | 1981-07-09 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zum Einstellen der Lebensdauer von Ladungsträgern in Halbleiterkörpern |
FR2249491B1 (ja) * | 1973-10-30 | 1976-10-01 | Thomson Csf | |
US3909304A (en) * | 1974-05-03 | 1975-09-30 | Western Electric Co | Method of doping a semiconductor body |
US3909807A (en) * | 1974-09-03 | 1975-09-30 | Bell Telephone Labor Inc | Integrated circuit memory cell |
JPS5138990A (en) * | 1974-09-30 | 1976-03-31 | Suwa Seikosha Kk | Handotaisochino seizohoho |
DE2453134C3 (de) * | 1974-11-08 | 1983-02-10 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Planardiffusionsverfahren |
US4053924A (en) * | 1975-02-07 | 1977-10-11 | California Linear Circuits, Inc. | Ion-implanted semiconductor abrupt junction |
US3982967A (en) * | 1975-03-26 | 1976-09-28 | Ibm Corporation | Method of proton-enhanced diffusion for simultaneously forming integrated circuit regions of varying depths |
US4033787A (en) * | 1975-10-06 | 1977-07-05 | Honeywell Inc. | Fabrication of semiconductor devices utilizing ion implantation |
DE2554426C3 (de) * | 1975-12-03 | 1979-06-21 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Erzeugung einer lokal hohen inversen Stromverstärkung bei einem Planartransistor sowie nach diesem Verfahren hergestellter invers betriebener Transistor |
US4003759A (en) * | 1976-03-01 | 1977-01-18 | Honeywell Inc. | Ion implantation of gold in mercury cadmium telluride |
DE2627855A1 (de) * | 1976-06-22 | 1977-12-29 | Siemens Ag | Halbleiterbauelement mit wenigstens zwei, einen pn-uebergang bildenden zonen unterschiedlichen leitungstyps sowie verfahren zu dessen herstellung |
JPS5327110U (ja) * | 1976-08-13 | 1978-03-08 | ||
US4034395A (en) * | 1976-09-29 | 1977-07-05 | Honeywell Inc. | Monolithic integrated circuit having a plurality of resistor regions electrically connected in series |
US4044371A (en) * | 1976-09-29 | 1977-08-23 | Honeywell Inc. | Plurality of precise temperature resistors formed in monolithic integrated circuits |
US4111720A (en) * | 1977-03-31 | 1978-09-05 | International Business Machines Corporation | Method for forming a non-epitaxial bipolar integrated circuit |
US4157268A (en) * | 1977-06-16 | 1979-06-05 | International Business Machines Corporation | Localized oxidation enhancement for an integrated injection logic circuit |
FR2406301A1 (fr) * | 1977-10-17 | 1979-05-11 | Silicium Semiconducteur Ssc | Procede de fabrication de dispositifs semi-conducteurs rapides |
US4338138A (en) * | 1980-03-03 | 1982-07-06 | International Business Machines Corporation | Process for fabricating a bipolar transistor |
JPS56149473U (ja) * | 1981-03-26 | 1981-11-10 | ||
US4536945A (en) * | 1983-11-02 | 1985-08-27 | National Semiconductor Corporation | Process for producing CMOS structures with Schottky bipolar transistors |
US4727038A (en) * | 1984-08-22 | 1988-02-23 | Mitsubishi Denki Kabushiki Kaisha | Method of fabricating semiconductor device |
US4717588A (en) * | 1985-12-23 | 1988-01-05 | Motorola Inc. | Metal redistribution by rapid thermal processing |
US4910158A (en) * | 1987-11-23 | 1990-03-20 | Hughes Aircraft Company | Zener diode emulation and method of forming the same |
US4937756A (en) * | 1988-01-15 | 1990-06-26 | Industrial Technology Research Institute | Gated isolated structure |
DE59010851D1 (de) * | 1989-04-27 | 1998-11-12 | Max Planck Gesellschaft | Halbleiterstruktur mit einer 2D-Ladungsträgerschicht und Herstellungsverfahren |
EP0419898B1 (de) * | 1989-09-28 | 2000-05-31 | Siemens Aktiengesellschaft | Verfahren zur Erhöhung der Spannungsfestigkeit eines mehrschichtigen Halbleiterbauelements |
US5385865A (en) * | 1990-04-26 | 1995-01-31 | Max-Planck-Gesellschaft Zur Forderung Der Wissenschaften | Method of generating active semiconductor structures by means of starting structures which have a 2D charge carrier layer parallel to the surface |
US5108935A (en) * | 1990-11-16 | 1992-04-28 | Texas Instruments Incorporated | Reduction of hot carrier effects in semiconductor devices by controlled scattering via the intentional introduction of impurities |
US5179030A (en) * | 1991-04-26 | 1993-01-12 | Unitrode Corporation | Method of fabricating a buried zener diode simultaneously with other semiconductor devices |
GB2300753A (en) * | 1995-05-06 | 1996-11-13 | Atomic Energy Authority Uk | Reducing the minority carrier lifetime of semiconductor devices |
US20080087978A1 (en) * | 2006-10-11 | 2008-04-17 | Coolbaugh Douglas D | Semiconductor structure and method of manufacture |
US8178430B2 (en) | 2009-04-08 | 2012-05-15 | International Business Machines Corporation | N-type carrier enhancement in semiconductors |
SG11201402918VA (en) * | 2011-12-26 | 2014-10-30 | Toray Industries | Photosensitive resin composition and process for producing semiconductor element |
CN103426735B (zh) * | 2012-05-24 | 2016-08-10 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构的形成方法及mos晶体管的形成方法 |
US8999800B2 (en) * | 2012-12-12 | 2015-04-07 | Varian Semiconductor Equipment Associates, Inc. | Method of reducing contact resistance |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2787564A (en) * | 1954-10-28 | 1957-04-02 | Bell Telephone Labor Inc | Forming semiconductive devices by ionic bombardment |
US3108914A (en) * | 1959-06-30 | 1963-10-29 | Fairchild Camera Instr Co | Transistor manufacturing process |
US3423647A (en) * | 1964-07-30 | 1969-01-21 | Nippon Electric Co | Semiconductor device having regions with preselected different minority carrier lifetimes |
US3388009A (en) * | 1965-06-23 | 1968-06-11 | Ion Physics Corp | Method of forming a p-n junction by an ionic beam |
US3434894A (en) * | 1965-10-06 | 1969-03-25 | Ion Physics Corp | Fabricating solid state devices by ion implantation |
US3341754A (en) * | 1966-01-20 | 1967-09-12 | Ion Physics Corp | Semiconductor resistor containing interstitial and substitutional ions formed by an ion implantation method |
US3448344A (en) * | 1966-03-15 | 1969-06-03 | Westinghouse Electric Corp | Mosaic of semiconductor elements interconnected in an xy matrix |
US3413531A (en) * | 1966-09-06 | 1968-11-26 | Ion Physics Corp | High frequency field effect transistor |
US3440113A (en) * | 1966-09-19 | 1969-04-22 | Westinghouse Electric Corp | Process for diffusing gold into semiconductor material |
US3431150A (en) * | 1966-10-07 | 1969-03-04 | Us Air Force | Process for implanting grids in semiconductor devices |
US3479233A (en) * | 1967-01-16 | 1969-11-18 | Ibm | Method for simultaneously forming a buried layer and surface connection in semiconductor devices |
-
1968
- 1968-08-06 US US750650A patent/US3655457A/en not_active Expired - Lifetime
-
1969
- 1969-07-08 FR FR6923612A patent/FR2015121A1/fr not_active Withdrawn
- 1969-07-22 CA CA057611A patent/CA922024A/en not_active Expired
- 1969-07-29 DE DE1966237A patent/DE1966237C3/de not_active Expired
- 1969-07-29 DE DE19691938365 patent/DE1938365B2/de active Pending
- 1969-07-29 DE DE1966236A patent/DE1966236C3/de not_active Expired
- 1969-08-05 GB GB39126/69A patent/GB1274725A/en not_active Expired
- 1969-08-05 GB GB39125/69A patent/GB1262705A/en not_active Expired
- 1969-08-05 GB GB39127/69A patent/GB1270170A/en not_active Expired
- 1969-08-06 JP JP44061750A patent/JPS5125713B1/ja active Pending
- 1969-08-06 JP JP44061752A patent/JPS501636B1/ja active Pending
-
1975
- 1975-06-24 JP JP50077131A patent/JPS528673B1/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
FR2015121A1 (ja) | 1970-04-24 |
DE1966237A1 (de) | 1972-01-13 |
DE1966237C3 (de) | 1979-07-12 |
JPS528673B1 (ja) | 1977-03-10 |
DE1938365B2 (de) | 1972-12-21 |
DE1966237B2 (de) | 1975-07-17 |
DE1938365A1 (de) | 1970-02-12 |
GB1274725A (en) | 1972-05-17 |
GB1262705A (en) | 1972-02-02 |
DE1966236A1 (de) | 1971-12-16 |
DE1966236C3 (de) | 1979-07-19 |
DE1966236B2 (de) | 1975-08-07 |
GB1270170A (en) | 1972-04-12 |
CA922024A (en) | 1973-02-27 |
US3655457A (en) | 1972-04-11 |
JPS501636B1 (ja) | 1975-01-20 |