FR2015121A1 - - Google Patents

Info

Publication number
FR2015121A1
FR2015121A1 FR6923612A FR6923612A FR2015121A1 FR 2015121 A1 FR2015121 A1 FR 2015121A1 FR 6923612 A FR6923612 A FR 6923612A FR 6923612 A FR6923612 A FR 6923612A FR 2015121 A1 FR2015121 A1 FR 2015121A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR6923612A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2015121A1 publication Critical patent/FR2015121A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222—Bipolar technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821—Collector regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System further characterised by the doping material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/062—Gold diffusion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/151—Simultaneous diffusion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/904—Charge carrier lifetime control
FR6923612A 1968-08-06 1969-07-08 Withdrawn FR2015121A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US75065068A 1968-08-06 1968-08-06

Publications (1)

Publication Number Publication Date
FR2015121A1 true FR2015121A1 (fr) 1970-04-24

Family

ID=25018702

Family Applications (1)

Application Number Title Priority Date Filing Date
FR6923612A Withdrawn FR2015121A1 (fr) 1968-08-06 1969-07-08

Country Status (6)

Country Link
US (1) US3655457A (fr)
JP (3) JPS5125713B1 (fr)
CA (1) CA922024A (fr)
DE (3) DE1966237C3 (fr)
FR (1) FR2015121A1 (fr)
GB (3) GB1274725A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2305853A1 (fr) * 1975-03-26 1976-10-22 Ibm Procede de diffusion intensifiee par bombardement protonique pour former simultanement des regions de circuit integre de profondeurs differentes

Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3853644A (en) * 1969-09-18 1974-12-10 Kogyo Gijutsuin Transistor for super-high frequency and method of manufacturing it
US3919006A (en) * 1969-09-18 1975-11-11 Yasuo Tarui Method of manufacturing a lateral transistor
BE759667A (fr) * 1969-12-01 1971-06-01 Philips Nv Procede permettant la fabrication d'un dispositif semiconducteur, et dispositif semiconducteur obtenu par la mise en oeuvre de ce procede
JPS4936514B1 (fr) * 1970-05-13 1974-10-01
US3868722A (en) * 1970-06-20 1975-02-25 Philips Corp Semiconductor device having at least two transistors and method of manufacturing same
US3918996A (en) * 1970-11-02 1975-11-11 Texas Instruments Inc Formation of integrated circuits using proton enhanced diffusion
US3707765A (en) * 1970-11-19 1973-01-02 Motorola Inc Method of making isolated semiconductor devices
FR2123179B1 (fr) * 1971-01-28 1974-02-15 Commissariat Energie Atomique
US3895965A (en) * 1971-05-24 1975-07-22 Bell Telephone Labor Inc Method of forming buried layers by ion implantation
US3897274A (en) * 1971-06-01 1975-07-29 Texas Instruments Inc Method of fabricating dielectrically isolated semiconductor structures
US3775191A (en) * 1971-06-28 1973-11-27 Bell Canada Northern Electric Modification of channel regions in insulated gate field effect transistors
US3737346A (en) * 1971-07-01 1973-06-05 Bell Telephone Labor Inc Semiconductor device fabrication using combination of energy beams for masking and impurity doping
US3841917A (en) * 1971-09-06 1974-10-15 Philips Nv Methods of manufacturing semiconductor devices
JPS4879585A (fr) * 1972-01-24 1973-10-25
DE2235865A1 (de) * 1972-07-21 1974-01-31 Licentia Gmbh Halbleiteranordnung aus einer vielzahl von in einem gemeinsamen halbleiterkoerper untergebrachten halbleiterbauelementen
CH560463A5 (fr) * 1972-09-26 1975-03-27 Siemens Ag
US3841918A (en) * 1972-12-01 1974-10-15 Bell Telephone Labor Inc Method of integrated circuit fabrication
US3981072A (en) * 1973-05-25 1976-09-21 Trw Inc. Bipolar transistor construction method
JPS5029186A (fr) * 1973-07-17 1975-03-25
US3921199A (en) * 1973-07-31 1975-11-18 Texas Instruments Inc Junction breakdown voltage by means of ion implanted compensation guard ring
DE2341311C3 (de) * 1973-08-16 1981-07-09 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum Einstellen der Lebensdauer von Ladungsträgern in Halbleiterkörpern
FR2249491B1 (fr) * 1973-10-30 1976-10-01 Thomson Csf
US3909304A (en) * 1974-05-03 1975-09-30 Western Electric Co Method of doping a semiconductor body
US3909807A (en) * 1974-09-03 1975-09-30 Bell Telephone Labor Inc Integrated circuit memory cell
JPS5138990A (en) * 1974-09-30 1976-03-31 Suwa Seikosha Kk Handotaisochino seizohoho
DE2453134C3 (de) * 1974-11-08 1983-02-10 Deutsche Itt Industries Gmbh, 7800 Freiburg Planardiffusionsverfahren
US4053924A (en) * 1975-02-07 1977-10-11 California Linear Circuits, Inc. Ion-implanted semiconductor abrupt junction
US4033787A (en) * 1975-10-06 1977-07-05 Honeywell Inc. Fabrication of semiconductor devices utilizing ion implantation
DE2554426C3 (de) * 1975-12-03 1979-06-21 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Erzeugung einer lokal hohen inversen Stromverstärkung bei einem Planartransistor sowie nach diesem Verfahren hergestellter invers betriebener Transistor
US4003759A (en) * 1976-03-01 1977-01-18 Honeywell Inc. Ion implantation of gold in mercury cadmium telluride
DE2627855A1 (de) * 1976-06-22 1977-12-29 Siemens Ag Halbleiterbauelement mit wenigstens zwei, einen pn-uebergang bildenden zonen unterschiedlichen leitungstyps sowie verfahren zu dessen herstellung
JPS5327110U (fr) * 1976-08-13 1978-03-08
US4034395A (en) * 1976-09-29 1977-07-05 Honeywell Inc. Monolithic integrated circuit having a plurality of resistor regions electrically connected in series
US4044371A (en) * 1976-09-29 1977-08-23 Honeywell Inc. Plurality of precise temperature resistors formed in monolithic integrated circuits
US4111720A (en) * 1977-03-31 1978-09-05 International Business Machines Corporation Method for forming a non-epitaxial bipolar integrated circuit
US4157268A (en) * 1977-06-16 1979-06-05 International Business Machines Corporation Localized oxidation enhancement for an integrated injection logic circuit
FR2406301A1 (fr) * 1977-10-17 1979-05-11 Silicium Semiconducteur Ssc Procede de fabrication de dispositifs semi-conducteurs rapides
US4338138A (en) * 1980-03-03 1982-07-06 International Business Machines Corporation Process for fabricating a bipolar transistor
JPS56149473U (fr) * 1981-03-26 1981-11-10
US4536945A (en) * 1983-11-02 1985-08-27 National Semiconductor Corporation Process for producing CMOS structures with Schottky bipolar transistors
US4727038A (en) * 1984-08-22 1988-02-23 Mitsubishi Denki Kabushiki Kaisha Method of fabricating semiconductor device
US4717588A (en) * 1985-12-23 1988-01-05 Motorola Inc. Metal redistribution by rapid thermal processing
US4910158A (en) * 1987-11-23 1990-03-20 Hughes Aircraft Company Zener diode emulation and method of forming the same
US4937756A (en) * 1988-01-15 1990-06-26 Industrial Technology Research Institute Gated isolated structure
DE59010851D1 (de) * 1989-04-27 1998-11-12 Max Planck Gesellschaft Halbleiterstruktur mit einer 2D-Ladungsträgerschicht und Herstellungsverfahren
EP0419898B1 (fr) * 1989-09-28 2000-05-31 Siemens Aktiengesellschaft Méthode pour augmenter la tenue en tension d'un dispositif semi-conducteur à plusieurs couches
US5385865A (en) * 1990-04-26 1995-01-31 Max-Planck-Gesellschaft Zur Forderung Der Wissenschaften Method of generating active semiconductor structures by means of starting structures which have a 2D charge carrier layer parallel to the surface
US5108935A (en) * 1990-11-16 1992-04-28 Texas Instruments Incorporated Reduction of hot carrier effects in semiconductor devices by controlled scattering via the intentional introduction of impurities
US5179030A (en) * 1991-04-26 1993-01-12 Unitrode Corporation Method of fabricating a buried zener diode simultaneously with other semiconductor devices
GB2300753A (en) * 1995-05-06 1996-11-13 Atomic Energy Authority Uk Reducing the minority carrier lifetime of semiconductor devices
US20080087978A1 (en) * 2006-10-11 2008-04-17 Coolbaugh Douglas D Semiconductor structure and method of manufacture
US8178430B2 (en) 2009-04-08 2012-05-15 International Business Machines Corporation N-type carrier enhancement in semiconductors
SG11201402918VA (en) * 2011-12-26 2014-10-30 Toray Industries Photosensitive resin composition and process for producing semiconductor element
CN103426735B (zh) * 2012-05-24 2016-08-10 中芯国际集成电路制造(上海)有限公司 半导体结构的形成方法及mos晶体管的形成方法
US8999800B2 (en) * 2012-12-12 2015-04-07 Varian Semiconductor Equipment Associates, Inc. Method of reducing contact resistance

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2787564A (en) * 1954-10-28 1957-04-02 Bell Telephone Labor Inc Forming semiconductive devices by ionic bombardment
US3108914A (en) * 1959-06-30 1963-10-29 Fairchild Camera Instr Co Transistor manufacturing process
US3423647A (en) * 1964-07-30 1969-01-21 Nippon Electric Co Semiconductor device having regions with preselected different minority carrier lifetimes
US3388009A (en) * 1965-06-23 1968-06-11 Ion Physics Corp Method of forming a p-n junction by an ionic beam
US3434894A (en) * 1965-10-06 1969-03-25 Ion Physics Corp Fabricating solid state devices by ion implantation
US3341754A (en) * 1966-01-20 1967-09-12 Ion Physics Corp Semiconductor resistor containing interstitial and substitutional ions formed by an ion implantation method
US3448344A (en) * 1966-03-15 1969-06-03 Westinghouse Electric Corp Mosaic of semiconductor elements interconnected in an xy matrix
US3413531A (en) * 1966-09-06 1968-11-26 Ion Physics Corp High frequency field effect transistor
US3440113A (en) * 1966-09-19 1969-04-22 Westinghouse Electric Corp Process for diffusing gold into semiconductor material
US3431150A (en) * 1966-10-07 1969-03-04 Us Air Force Process for implanting grids in semiconductor devices
US3479233A (en) * 1967-01-16 1969-11-18 Ibm Method for simultaneously forming a buried layer and surface connection in semiconductor devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2305853A1 (fr) * 1975-03-26 1976-10-22 Ibm Procede de diffusion intensifiee par bombardement protonique pour former simultanement des regions de circuit integre de profondeurs differentes

Also Published As

Publication number Publication date
DE1966237A1 (de) 1972-01-13
DE1966237C3 (de) 1979-07-12
JPS528673B1 (fr) 1977-03-10
DE1938365B2 (de) 1972-12-21
DE1966237B2 (de) 1975-07-17
JPS5125713B1 (fr) 1976-08-02
DE1938365A1 (de) 1970-02-12
GB1274725A (en) 1972-05-17
GB1262705A (en) 1972-02-02
DE1966236A1 (de) 1971-12-16
DE1966236C3 (de) 1979-07-19
DE1966236B2 (de) 1975-08-07
GB1270170A (en) 1972-04-12
CA922024A (en) 1973-02-27
US3655457A (en) 1972-04-11
JPS501636B1 (fr) 1975-01-20

Similar Documents

Publication Publication Date Title
JPS501636B1 (fr)
AU1946070A (fr)
AU5506869A (fr)
AU2374870A (fr)
AU5184069A (fr)
FR2017324A1 (fr)
AU6168869A (fr)
AU6171569A (fr)
AU416157B2 (fr)
AU2952567A (fr)
AU2581067A (fr)
AU4811568A (fr)
AU421558B1 (fr)
AR203075Q (fr)
AU3789668A (fr)
AU3224368A (fr)
AU2580267A (fr)
AU4744468A (fr)
BE709435A (fr)
BE709319A (fr)
BE708888A (fr)
AU2889368A (fr)
BE642636A (fr)
BE708933A (fr)
BE708951A (fr)

Legal Events

Date Code Title Description
ST Notification of lapse