JPS51150986A - Fabrication method of semiconductor device - Google Patents

Fabrication method of semiconductor device

Info

Publication number
JPS51150986A
JPS51150986A JP7490575A JP7490575A JPS51150986A JP S51150986 A JPS51150986 A JP S51150986A JP 7490575 A JP7490575 A JP 7490575A JP 7490575 A JP7490575 A JP 7490575A JP S51150986 A JPS51150986 A JP S51150986A
Authority
JP
Japan
Prior art keywords
semiconductor device
fabrication method
oxidization
fabricate
activation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7490575A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5751926B2 (cs
Inventor
Shinichi Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7490575A priority Critical patent/JPS51150986A/ja
Publication of JPS51150986A publication Critical patent/JPS51150986A/ja
Publication of JPS5751926B2 publication Critical patent/JPS5751926B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
JP7490575A 1975-06-19 1975-06-19 Fabrication method of semiconductor device Granted JPS51150986A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7490575A JPS51150986A (en) 1975-06-19 1975-06-19 Fabrication method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7490575A JPS51150986A (en) 1975-06-19 1975-06-19 Fabrication method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS51150986A true JPS51150986A (en) 1976-12-24
JPS5751926B2 JPS5751926B2 (cs) 1982-11-05

Family

ID=13560860

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7490575A Granted JPS51150986A (en) 1975-06-19 1975-06-19 Fabrication method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS51150986A (cs)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6184066A (ja) * 1984-10-01 1986-04-28 Oki Electric Ind Co Ltd 薄膜トランジスタの製造方法
JPS6184065A (ja) * 1984-10-01 1986-04-28 Oki Electric Ind Co Ltd 薄膜トランジスタの製造方法
JPS6189673A (ja) * 1984-10-09 1986-05-07 Matsushita Electric Ind Co Ltd 薄膜半導体装置の製造方法
JPH047876A (ja) * 1990-04-25 1992-01-13 Nec Corp 薄膜トランジスタ

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5927513U (ja) * 1982-08-13 1984-02-21 日本精密工業株式会社 焦点検出素子保護シヤツタ付き焦点調節装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6184066A (ja) * 1984-10-01 1986-04-28 Oki Electric Ind Co Ltd 薄膜トランジスタの製造方法
JPS6184065A (ja) * 1984-10-01 1986-04-28 Oki Electric Ind Co Ltd 薄膜トランジスタの製造方法
JPS6189673A (ja) * 1984-10-09 1986-05-07 Matsushita Electric Ind Co Ltd 薄膜半導体装置の製造方法
JPH047876A (ja) * 1990-04-25 1992-01-13 Nec Corp 薄膜トランジスタ

Also Published As

Publication number Publication date
JPS5751926B2 (cs) 1982-11-05

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