JPS51150985A - Fabrication method of semiconductor device - Google Patents
Fabrication method of semiconductor deviceInfo
- Publication number
- JPS51150985A JPS51150985A JP7490475A JP7490475A JPS51150985A JP S51150985 A JPS51150985 A JP S51150985A JP 7490475 A JP7490475 A JP 7490475A JP 7490475 A JP7490475 A JP 7490475A JP S51150985 A JPS51150985 A JP S51150985A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- fabrication method
- fabricate
- wiring
- metal layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Local Oxidation Of Silicon (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE: How to fabricate a semiconductor device which is excellent in durability against erosion and in securing separation of each wiring and also has a part of metal layer inside.
COPYRIGHT: (C)1976,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7490475A JPS51150985A (en) | 1975-06-19 | 1975-06-19 | Fabrication method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7490475A JPS51150985A (en) | 1975-06-19 | 1975-06-19 | Fabrication method of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS51150985A true JPS51150985A (en) | 1976-12-24 |
Family
ID=13560831
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7490475A Pending JPS51150985A (en) | 1975-06-19 | 1975-06-19 | Fabrication method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS51150985A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6235647A (en) * | 1985-08-09 | 1987-02-16 | Mitsubishi Electric Corp | Semiconductor device |
JPS62222653A (en) * | 1985-11-18 | 1987-09-30 | Mitsubishi Electric Corp | Semiconductor device and manufacture thereof |
JPH02249230A (en) * | 1988-11-25 | 1990-10-05 | Fujitsu Ltd | Forming method for metal electrode |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5186968A (en) * | 1975-01-29 | 1976-07-30 | Kyushu Nippon Electric | HANDOTAISOCHINOSEIZOHOHO |
-
1975
- 1975-06-19 JP JP7490475A patent/JPS51150985A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5186968A (en) * | 1975-01-29 | 1976-07-30 | Kyushu Nippon Electric | HANDOTAISOCHINOSEIZOHOHO |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6235647A (en) * | 1985-08-09 | 1987-02-16 | Mitsubishi Electric Corp | Semiconductor device |
JPS62222653A (en) * | 1985-11-18 | 1987-09-30 | Mitsubishi Electric Corp | Semiconductor device and manufacture thereof |
JPH0584666B2 (en) * | 1985-11-18 | 1993-12-02 | Mitsubishi Electric Corp | |
JPH02249230A (en) * | 1988-11-25 | 1990-10-05 | Fujitsu Ltd | Forming method for metal electrode |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5223263A (en) | Method of manufacturing semiconductor device | |
JPS51150985A (en) | Fabrication method of semiconductor device | |
JPS51113433A (en) | High speed adder | |
JPS51150986A (en) | Fabrication method of semiconductor device | |
JPS5249991A (en) | Sputtering method | |
JPS51112193A (en) | Processing method of semiconductor equipment | |
JPS52106681A (en) | Etching method | |
JPS52106675A (en) | Manufacturing method of semiconductor device | |
JPS543473A (en) | Manufacture of semiconductor device | |
JPS51126083A (en) | Manufacturing method of semi-conductor equpment | |
JPS51111478A (en) | A method of producing semiconductor crystal | |
JPS5268388A (en) | Semiconductor integrated circuit | |
JPS542667A (en) | Manufacture of semiconductor device | |
JPS5219968A (en) | Semiconductor ic manufacturig process | |
JPS5282083A (en) | Production of semiconductor device | |
JPS52179A (en) | Method of fabricating semiconductor | |
JPS5244175A (en) | Method of flat etching of silicon substrate | |
JPS51150984A (en) | Dielectric isolation method | |
JPS5251872A (en) | Production of semiconductor device | |
JPS51150286A (en) | Production method of semiconductor device | |
JPS51112279A (en) | Semiconductor device | |
JPS53140976A (en) | Semiconductor device | |
JPS5213778A (en) | Plasma-etching method | |
JPS5216975A (en) | Method of manufacturing semiconductor unit | |
JPS5325369A (en) | Production of semiconductor device |