JPS51147186A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS51147186A
JPS51147186A JP50071638A JP7163875A JPS51147186A JP S51147186 A JPS51147186 A JP S51147186A JP 50071638 A JP50071638 A JP 50071638A JP 7163875 A JP7163875 A JP 7163875A JP S51147186 A JPS51147186 A JP S51147186A
Authority
JP
Japan
Prior art keywords
semiconductor device
source
equalize
potential
characteristic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50071638A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5518052B2 (enrdf_load_stackoverflow
Inventor
Nobuo Sasaki
Toru Inaba
Motoo Nakano
Yasuo Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP50071638A priority Critical patent/JPS51147186A/ja
Publication of JPS51147186A publication Critical patent/JPS51147186A/ja
Publication of JPS5518052B2 publication Critical patent/JPS5518052B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6708—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing the kink effect or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect

Landscapes

  • Non-Volatile Memory (AREA)
  • Thin Film Transistor (AREA)
JP50071638A 1975-06-12 1975-06-12 Semiconductor device Granted JPS51147186A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50071638A JPS51147186A (en) 1975-06-12 1975-06-12 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50071638A JPS51147186A (en) 1975-06-12 1975-06-12 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS51147186A true JPS51147186A (en) 1976-12-17
JPS5518052B2 JPS5518052B2 (enrdf_load_stackoverflow) 1980-05-16

Family

ID=13466379

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50071638A Granted JPS51147186A (en) 1975-06-12 1975-06-12 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS51147186A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4484209A (en) * 1980-12-12 1984-11-20 Tokyo Shibaura Denki Kabushiki Kaisha SOS Mosfet with thinned channel contact region
JPS6115369A (ja) * 1984-07-02 1986-01-23 Nippon Telegr & Teleph Corp <Ntt> 半導体装置及びその製造方法
US4969023A (en) * 1987-08-24 1990-11-06 Asea Brown Boveri Ab SOS transistor structure
JPH0394471A (ja) * 1989-09-06 1991-04-19 Mitsubishi Electric Corp 半導体装置
US5125007A (en) * 1988-11-25 1992-06-23 Mitsubishi Denki Kabushiki Kaisha Thin-film soi-mosfet with a body region
US5264721A (en) * 1989-04-29 1993-11-23 Fujitsu Limited Insulated-gate FET on an SOI-structure

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6313876U (enrdf_load_stackoverflow) * 1986-07-15 1988-01-29
JPH01254545A (ja) * 1988-03-31 1989-10-11 Dainippon Printing Co Ltd 金属蓋付容器

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4484209A (en) * 1980-12-12 1984-11-20 Tokyo Shibaura Denki Kabushiki Kaisha SOS Mosfet with thinned channel contact region
JPS6115369A (ja) * 1984-07-02 1986-01-23 Nippon Telegr & Teleph Corp <Ntt> 半導体装置及びその製造方法
US4969023A (en) * 1987-08-24 1990-11-06 Asea Brown Boveri Ab SOS transistor structure
US5125007A (en) * 1988-11-25 1992-06-23 Mitsubishi Denki Kabushiki Kaisha Thin-film soi-mosfet with a body region
US5343051A (en) * 1988-11-25 1994-08-30 Mitsubishi Denki Kabushiki Kaisha Thin-film SOI MOSFET
US5424225A (en) * 1988-11-25 1995-06-13 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a thin film SOI MOSFET
US5264721A (en) * 1989-04-29 1993-11-23 Fujitsu Limited Insulated-gate FET on an SOI-structure
JPH0394471A (ja) * 1989-09-06 1991-04-19 Mitsubishi Electric Corp 半導体装置

Also Published As

Publication number Publication date
JPS5518052B2 (enrdf_load_stackoverflow) 1980-05-16

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