JPS51142982A - Method of producing single crystal silicon ic - Google Patents

Method of producing single crystal silicon ic

Info

Publication number
JPS51142982A
JPS51142982A JP3912876A JP3912876A JPS51142982A JP S51142982 A JPS51142982 A JP S51142982A JP 3912876 A JP3912876 A JP 3912876A JP 3912876 A JP3912876 A JP 3912876A JP S51142982 A JPS51142982 A JP S51142982A
Authority
JP
Japan
Prior art keywords
single crystal
crystal silicon
producing single
producing
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3912876A
Other languages
English (en)
Japanese (ja)
Inventor
Jii Oorudamu Uiriamu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of JPS51142982A publication Critical patent/JPS51142982A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Local Oxidation Of Silicon (AREA)
JP3912876A 1975-05-05 1976-04-07 Method of producing single crystal silicon ic Pending JPS51142982A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US57503375A 1975-05-05 1975-05-05

Publications (1)

Publication Number Publication Date
JPS51142982A true JPS51142982A (en) 1976-12-08

Family

ID=24298658

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3912876A Pending JPS51142982A (en) 1975-05-05 1976-04-07 Method of producing single crystal silicon ic

Country Status (4)

Country Link
JP (1) JPS51142982A (de)
DE (1) DE2615441A1 (de)
FR (1) FR2310634A1 (de)
NL (1) NL7604708A (de)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55143047A (en) * 1979-04-25 1980-11-08 Nec Corp Insulating separation method for semiconductor device
JPS5961069A (ja) * 1982-09-30 1984-04-07 Toshiba Corp 半導体装置の製造方法
JPS5976472A (ja) * 1982-10-26 1984-05-01 Toshiba Corp 半導体装置の製造方法
JPS59115538A (ja) * 1982-12-20 1984-07-04 インタ−ナシヨナル　ビジネス　マシ−ンズ　コ−ポレ−シヨン 集積回路の製造方法
JPH098299A (ja) * 1977-01-26 1997-01-10 Sgs Thomson Microelectron Inc 半導体装置及びその製造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55105373A (en) * 1978-12-04 1980-08-12 Mostek Corp Metal oxide semiconductor transistor and method of fabricating same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4868177A (de) * 1972-01-27 1973-09-17
JPS49110280A (de) * 1973-01-15 1974-10-21
JPS5087783A (de) * 1973-12-07 1975-07-15

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4868177A (de) * 1972-01-27 1973-09-17
JPS49110280A (de) * 1973-01-15 1974-10-21
JPS5087783A (de) * 1973-12-07 1975-07-15

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH098299A (ja) * 1977-01-26 1997-01-10 Sgs Thomson Microelectron Inc 半導体装置及びその製造方法
JPS55143047A (en) * 1979-04-25 1980-11-08 Nec Corp Insulating separation method for semiconductor device
JPS6228579B2 (de) * 1979-04-25 1987-06-22 Nippon Electric Co
JPS5961069A (ja) * 1982-09-30 1984-04-07 Toshiba Corp 半導体装置の製造方法
JPS5976472A (ja) * 1982-10-26 1984-05-01 Toshiba Corp 半導体装置の製造方法
JPS59115538A (ja) * 1982-12-20 1984-07-04 インタ−ナシヨナル　ビジネス　マシ−ンズ　コ−ポレ−シヨン 集積回路の製造方法
JPS6323656B2 (de) * 1982-12-20 1988-05-17 Intaanashonaru Bijinesu Mashiinzu Corp

Also Published As

Publication number Publication date
FR2310634A1 (fr) 1976-12-03
DE2615441A1 (de) 1976-11-18
NL7604708A (nl) 1976-11-09

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