JPS51135362A - Method of manufacturing silicon semiconductor element - Google Patents
Method of manufacturing silicon semiconductor elementInfo
- Publication number
- JPS51135362A JPS51135362A JP5982875A JP5982875A JPS51135362A JP S51135362 A JPS51135362 A JP S51135362A JP 5982875 A JP5982875 A JP 5982875A JP 5982875 A JP5982875 A JP 5982875A JP S51135362 A JPS51135362 A JP S51135362A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor element
- silicon semiconductor
- manufacturing silicon
- flawless
- arsenic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To form a flawless, high impurity density n type area in a silicon substrate by thermal diffusion of phosphorus after an ion injection of arsenic.
COPYRIGHT: (C)1976,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5982875A JPS51135362A (en) | 1975-05-19 | 1975-05-19 | Method of manufacturing silicon semiconductor element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5982875A JPS51135362A (en) | 1975-05-19 | 1975-05-19 | Method of manufacturing silicon semiconductor element |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS51135362A true JPS51135362A (en) | 1976-11-24 |
JPS5415748B2 JPS5415748B2 (en) | 1979-06-16 |
Family
ID=13124465
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5982875A Granted JPS51135362A (en) | 1975-05-19 | 1975-05-19 | Method of manufacturing silicon semiconductor element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS51135362A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01147829A (en) * | 1987-12-04 | 1989-06-09 | Toshiba Corp | Manufacture of semiconductor device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4978485A (en) * | 1972-11-30 | 1974-07-29 |
-
1975
- 1975-05-19 JP JP5982875A patent/JPS51135362A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4978485A (en) * | 1972-11-30 | 1974-07-29 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01147829A (en) * | 1987-12-04 | 1989-06-09 | Toshiba Corp | Manufacture of semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS5415748B2 (en) | 1979-06-16 |
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