JPS51135362A - Method of manufacturing silicon semiconductor element - Google Patents

Method of manufacturing silicon semiconductor element

Info

Publication number
JPS51135362A
JPS51135362A JP5982875A JP5982875A JPS51135362A JP S51135362 A JPS51135362 A JP S51135362A JP 5982875 A JP5982875 A JP 5982875A JP 5982875 A JP5982875 A JP 5982875A JP S51135362 A JPS51135362 A JP S51135362A
Authority
JP
Japan
Prior art keywords
semiconductor element
silicon semiconductor
manufacturing silicon
flawless
arsenic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5982875A
Other languages
Japanese (ja)
Other versions
JPS5415748B2 (en
Inventor
Hiroshi Koide
Tsukasa Sawaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP5982875A priority Critical patent/JPS51135362A/en
Publication of JPS51135362A publication Critical patent/JPS51135362A/en
Publication of JPS5415748B2 publication Critical patent/JPS5415748B2/ja
Granted legal-status Critical Current

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Abstract

PURPOSE: To form a flawless, high impurity density n type area in a silicon substrate by thermal diffusion of phosphorus after an ion injection of arsenic.
COPYRIGHT: (C)1976,JPO&Japio
JP5982875A 1975-05-19 1975-05-19 Method of manufacturing silicon semiconductor element Granted JPS51135362A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5982875A JPS51135362A (en) 1975-05-19 1975-05-19 Method of manufacturing silicon semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5982875A JPS51135362A (en) 1975-05-19 1975-05-19 Method of manufacturing silicon semiconductor element

Publications (2)

Publication Number Publication Date
JPS51135362A true JPS51135362A (en) 1976-11-24
JPS5415748B2 JPS5415748B2 (en) 1979-06-16

Family

ID=13124465

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5982875A Granted JPS51135362A (en) 1975-05-19 1975-05-19 Method of manufacturing silicon semiconductor element

Country Status (1)

Country Link
JP (1) JPS51135362A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01147829A (en) * 1987-12-04 1989-06-09 Toshiba Corp Manufacture of semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4978485A (en) * 1972-11-30 1974-07-29

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4978485A (en) * 1972-11-30 1974-07-29

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01147829A (en) * 1987-12-04 1989-06-09 Toshiba Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS5415748B2 (en) 1979-06-16

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