JPS51132184A - Device used for apparatus for growing crystals from moten melts and method of growing crystals from molten melts - Google Patents

Device used for apparatus for growing crystals from moten melts and method of growing crystals from molten melts

Info

Publication number
JPS51132184A
JPS51132184A JP51028533A JP2853376A JPS51132184A JP S51132184 A JPS51132184 A JP S51132184A JP 51028533 A JP51028533 A JP 51028533A JP 2853376 A JP2853376 A JP 2853376A JP S51132184 A JPS51132184 A JP S51132184A
Authority
JP
Japan
Prior art keywords
melts
growing crystals
moten
device used
molten
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP51028533A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5745713B2 (enExample
Inventor
Ii Raberu Jiyunia Harorudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tyco International Ltd
Original Assignee
Tyco Laboratories Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tyco Laboratories Inc filed Critical Tyco Laboratories Inc
Publication of JPS51132184A publication Critical patent/JPS51132184A/ja
Publication of JPS5745713B2 publication Critical patent/JPS5745713B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/005—Simultaneous pulling of more than one crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/66—Crystals of complex geometrical shape, e.g. tubes, cylinders
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
    • Y10T117/104—Means for forming a hollow structure [e.g., tube, polygon]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
    • Y10T117/1044—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die] including means forming a flat shape [e.g., ribbon]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP51028533A 1975-03-17 1976-03-16 Device used for apparatus for growing crystals from moten melts and method of growing crystals from molten melts Granted JPS51132184A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/558,768 US3953174A (en) 1975-03-17 1975-03-17 Apparatus for growing crystalline bodies from the melt

Publications (2)

Publication Number Publication Date
JPS51132184A true JPS51132184A (en) 1976-11-17
JPS5745713B2 JPS5745713B2 (enExample) 1982-09-29

Family

ID=24230914

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51028533A Granted JPS51132184A (en) 1975-03-17 1976-03-16 Device used for apparatus for growing crystals from moten melts and method of growing crystals from molten melts

Country Status (9)

Country Link
US (1) US3953174A (enExample)
JP (1) JPS51132184A (enExample)
BE (1) BE839611A (enExample)
CA (1) CA1052667A (enExample)
DE (1) DE2611056A1 (enExample)
FR (1) FR2304397A1 (enExample)
GB (1) GB1485357A (enExample)
IT (1) IT1057999B (enExample)
NL (1) NL183596C (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002540052A (ja) * 1999-03-25 2002-11-26 エイエスイー・アメリカス・インコーポレーテッド Ｅｆｇ結晶成長装置
JP2017114757A (ja) * 2015-12-26 2017-06-29 並木精密宝石株式会社 大型ｅｆｇ法用育成炉の熱反射板構造

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4028059A (en) * 1975-12-18 1977-06-07 Tyco Laboratories, Inc. Multiple dies for ribbon
US4075055A (en) * 1976-04-16 1978-02-21 International Business Machines Corporation Method and apparatus for forming an elongated silicon crystalline body using a <110>{211}orientated seed crystal
US4230674A (en) * 1976-12-27 1980-10-28 Mobil Tyco Solar Energy Corporation Crucible-die assemblies for growing crystalline bodies of selected shapes
US4289572A (en) * 1976-12-27 1981-09-15 Dow Corning Corporation Method of closing silicon tubular bodies
US4325917A (en) * 1977-07-21 1982-04-20 Pelts Boris B Method and apparatus for producing sapphire tubes
AT391887B (de) * 1977-07-21 1990-12-10 Pelts Boris Bentsionovich Ing Verfahren zum herstellen von kristallinen saphirrohren und einrichtung zu dessen durchfuehrung
US4353875A (en) * 1978-11-06 1982-10-12 Allied Corporation Apparatus for growing crystalline materials
US4271129A (en) * 1979-03-06 1981-06-02 Rca Corporation Heat radiation deflectors within an EFG crucible
US4440728A (en) * 1981-08-03 1984-04-03 Mobil Solar Energy Corporation Apparatus for growing tubular crystalline bodies
USH520H (en) 1985-12-06 1988-09-06 Technique for increasing oxygen incorporation during silicon czochralski crystal growth
US4721688A (en) * 1986-09-18 1988-01-26 Mobil Solar Energy Corporation Method of growing crystals
SU1592414A1 (ru) * 1986-11-26 1990-09-15 Vni Pk T I Elektrotermicheskog Cпocoб bыpaщиbahия пpoфилиpobahhыx kpиctaллob tугoплabkиx coeдиhehий и уctpoйctbo для eгo ocущectbлehия
US4937053A (en) * 1987-03-27 1990-06-26 Mobil Solar Energy Corporation Crystal growing apparatus
US4786479A (en) * 1987-09-02 1988-11-22 The United States Of America As Represented By The United States Department Of Energy Apparatus for dendritic web growth systems
WO1992001091A1 (en) * 1990-07-10 1992-01-23 Saphikon, Inc. Apparatus for growing hollow crystalline bodies from the melt
DE4022389C2 (de) * 1990-07-13 1995-06-08 Leybold Ag Schmelz- und Gießofen
JPH04317493A (ja) * 1991-04-15 1992-11-09 Nkk Corp シリコン単結晶の製造装置
US5543630A (en) * 1995-01-31 1996-08-06 The United States Of America As Represented By The Secretary Of The Air Force High Tc superconducting devices on bi-crystal substrates
US5754391A (en) * 1996-05-17 1998-05-19 Saphikon Inc. Electrostatic chuck
TWI236455B (en) * 2002-02-27 2005-07-21 Univ Nat Taiwan Method for growing stoichiometric lithium niobate and lithium tantalate single crystals and apparatus thereof
US7348076B2 (en) 2004-04-08 2008-03-25 Saint-Gobain Ceramics & Plastics, Inc. Single crystals and methods for fabricating same
EP2275772A1 (en) * 2005-06-10 2011-01-19 Saint-Gobain Ceramics and Plastics, Inc. Transparent ceramic composite
RU2304641C2 (ru) * 2005-07-08 2007-08-20 Николай Иванович Блецкан Устройство для выращивания профилированных монокристаллов сапфира
KR101353277B1 (ko) * 2006-09-22 2014-01-22 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드 C-플레인 단결정 사파이어 재료의 형성 방법
US20090130415A1 (en) * 2007-11-21 2009-05-21 Saint-Gobain Ceramics & Plastics, Inc. R-Plane Sapphire Method and Apparatus
US11047650B2 (en) 2017-09-29 2021-06-29 Saint-Gobain Ceramics & Plastics, Inc. Transparent composite having a laminated structure
US11713520B1 (en) * 2021-02-08 2023-08-01 Sapphire Systems, Inc. Targeted heat control system and method for integrated crucible and die system for sapphire sheet growing

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3591348A (en) * 1968-01-24 1971-07-06 Tyco Laboratories Inc Method of growing crystalline materials
US3687633A (en) * 1970-08-28 1972-08-29 Tyco Laboratories Inc Apparatus for growing crystalline bodies from the melt
US3870477A (en) * 1972-07-10 1975-03-11 Tyco Laboratories Inc Optical control of crystal growth

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002540052A (ja) * 1999-03-25 2002-11-26 エイエスイー・アメリカス・インコーポレーテッド Ｅｆｇ結晶成長装置
JP2017114757A (ja) * 2015-12-26 2017-06-29 並木精密宝石株式会社 大型ｅｆｇ法用育成炉の熱反射板構造

Also Published As

Publication number Publication date
GB1485357A (en) 1977-09-08
FR2304397B1 (enExample) 1982-04-02
NL7602731A (nl) 1976-09-21
BE839611A (fr) 1976-09-16
FR2304397A1 (fr) 1976-10-15
NL183596C (nl) 1988-12-01
DE2611056A1 (de) 1976-09-30
US3953174A (en) 1976-04-27
IT1057999B (it) 1982-03-30
JPS5745713B2 (enExample) 1982-09-29
NL183596B (nl) 1988-07-01
CA1052667A (en) 1979-04-17

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