BE839611A - Appareil pour developper des corps cristallins a partir d'un bain - Google Patents

Appareil pour developper des corps cristallins a partir d'un bain

Info

Publication number
BE839611A
BE839611A BE165203A BE165203A BE839611A BE 839611 A BE839611 A BE 839611A BE 165203 A BE165203 A BE 165203A BE 165203 A BE165203 A BE 165203A BE 839611 A BE839611 A BE 839611A
Authority
BE
Belgium
Prior art keywords
bath
crystalline bodies
developing
developing crystalline
bodies
Prior art date
Application number
BE165203A
Other languages
English (en)
French (fr)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE839611A publication Critical patent/BE839611A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/005—Simultaneous pulling of more than one crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/66—Crystals of complex geometrical shape, e.g. tubes, cylinders
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
    • Y10T117/104—Means for forming a hollow structure [e.g., tube, polygon]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
    • Y10T117/1044—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die] including means forming a flat shape [e.g., ribbon]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
BE165203A 1975-03-17 1976-03-16 Appareil pour developper des corps cristallins a partir d'un bain BE839611A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/558,768 US3953174A (en) 1975-03-17 1975-03-17 Apparatus for growing crystalline bodies from the melt

Publications (1)

Publication Number Publication Date
BE839611A true BE839611A (fr) 1976-09-16

Family

ID=24230914

Family Applications (1)

Application Number Title Priority Date Filing Date
BE165203A BE839611A (fr) 1975-03-17 1976-03-16 Appareil pour developper des corps cristallins a partir d'un bain

Country Status (9)

Country Link
US (1) US3953174A (xx)
JP (1) JPS51132184A (xx)
BE (1) BE839611A (xx)
CA (1) CA1052667A (xx)
DE (1) DE2611056A1 (xx)
FR (1) FR2304397A1 (xx)
GB (1) GB1485357A (xx)
IT (1) IT1057999B (xx)
NL (1) NL183596C (xx)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4028059A (en) * 1975-12-18 1977-06-07 Tyco Laboratories, Inc. Multiple dies for ribbon
US4075055A (en) * 1976-04-16 1978-02-21 International Business Machines Corporation Method and apparatus for forming an elongated silicon crystalline body using a <110>{211}orientated seed crystal
US4230674A (en) * 1976-12-27 1980-10-28 Mobil Tyco Solar Energy Corporation Crucible-die assemblies for growing crystalline bodies of selected shapes
US4289572A (en) * 1976-12-27 1981-09-15 Dow Corning Corporation Method of closing silicon tubular bodies
US4325917A (en) * 1977-07-21 1982-04-20 Pelts Boris B Method and apparatus for producing sapphire tubes
AT391887B (de) * 1977-07-21 1990-12-10 Pelts Boris Bentsionovich Ing Verfahren zum herstellen von kristallinen saphirrohren und einrichtung zu dessen durchfuehrung
US4353875A (en) * 1978-11-06 1982-10-12 Allied Corporation Apparatus for growing crystalline materials
US4271129A (en) * 1979-03-06 1981-06-02 Rca Corporation Heat radiation deflectors within an EFG crucible
US4440728A (en) * 1981-08-03 1984-04-03 Mobil Solar Energy Corporation Apparatus for growing tubular crystalline bodies
US4721688A (en) * 1986-09-18 1988-01-26 Mobil Solar Energy Corporation Method of growing crystals
SU1592414A1 (ru) * 1986-11-26 1990-09-15 Vni Pk T I Elektrotermicheskog Cпocoб bыpaщиbahия пpoфилиpobahhыx kpиctaллob tугoплabkиx coeдиhehий и уctpoйctbo для eгo ocущectbлehия
US4937053A (en) * 1987-03-27 1990-06-26 Mobil Solar Energy Corporation Crystal growing apparatus
US4786479A (en) * 1987-09-02 1988-11-22 The United States Of America As Represented By The United States Department Of Energy Apparatus for dendritic web growth systems
WO1992001091A1 (en) * 1990-07-10 1992-01-23 Saphikon, Inc. Apparatus for growing hollow crystalline bodies from the melt
DE4022389C2 (de) * 1990-07-13 1995-06-08 Leybold Ag Schmelz- und Gießofen
JPH04317493A (ja) * 1991-04-15 1992-11-09 Nkk Corp シリコン単結晶の製造装置
US5543630A (en) * 1995-01-31 1996-08-06 The United States Of America As Represented By The Secretary Of The Air Force High Tc superconducting devices on bi-crystal substrates
US5754391A (en) * 1996-05-17 1998-05-19 Saphikon Inc. Electrostatic chuck
US6139811A (en) * 1999-03-25 2000-10-31 Ase Americas, Inc. EFG crystal growth apparatus
TWI236455B (en) * 2002-02-27 2005-07-21 Univ Nat Taiwan Method for growing stoichiometric lithium niobate and lithium tantalate single crystals and apparatus thereof
US7348076B2 (en) 2004-04-08 2008-03-25 Saint-Gobain Ceramics & Plastics, Inc. Single crystals and methods for fabricating same
CN103256861A (zh) * 2005-06-10 2013-08-21 圣戈本陶瓷及塑料股份有限公司 复合物透明铠板
TWI472652B (zh) * 2006-09-22 2015-02-11 Saint Gobain Ceramics 製造發光二極體或雷射二極體之方法
US20090130415A1 (en) * 2007-11-21 2009-05-21 Saint-Gobain Ceramics & Plastics, Inc. R-Plane Sapphire Method and Apparatus
JP6025080B1 (ja) * 2015-12-26 2016-11-16 並木精密宝石株式会社 大型ｅｆｇ法用育成炉の熱反射板構造
US11047650B2 (en) 2017-09-29 2021-06-29 Saint-Gobain Ceramics & Plastics, Inc. Transparent composite having a laminated structure
US11713520B1 (en) * 2021-02-08 2023-08-01 Sapphire Systems, Inc. Targeted heat control system and method for integrated crucible and die system for sapphire sheet growing

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3591348A (en) * 1968-01-24 1971-07-06 Tyco Laboratories Inc Method of growing crystalline materials
US3687633A (en) * 1970-08-28 1972-08-29 Tyco Laboratories Inc Apparatus for growing crystalline bodies from the melt
US3870477A (en) * 1972-07-10 1975-03-11 Tyco Laboratories Inc Optical control of crystal growth

Also Published As

Publication number Publication date
IT1057999B (it) 1982-03-30
NL183596C (nl) 1988-12-01
JPS51132184A (en) 1976-11-17
DE2611056A1 (de) 1976-09-30
CA1052667A (en) 1979-04-17
GB1485357A (en) 1977-09-08
FR2304397A1 (fr) 1976-10-15
JPS5745713B2 (xx) 1982-09-29
FR2304397B1 (xx) 1982-04-02
NL7602731A (nl) 1976-09-21
NL183596B (nl) 1988-07-01
US3953174A (en) 1976-04-27

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Legal Events

Date Code Title Description
RE Patent lapsed

Owner name: SAPHIKON INC.

Effective date: 19890331