CA1052667A - Apparatus for growing crystalline bodies from the melt - Google Patents
Apparatus for growing crystalline bodies from the meltInfo
- Publication number
- CA1052667A CA1052667A CA247,928A CA247928A CA1052667A CA 1052667 A CA1052667 A CA 1052667A CA 247928 A CA247928 A CA 247928A CA 1052667 A CA1052667 A CA 1052667A
- Authority
- CA
- Canada
- Prior art keywords
- melt
- crucible
- die
- side wall
- cavities
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000155 melt Substances 0.000 title claims abstract description 31
- 238000000034 method Methods 0.000 claims description 22
- 210000001736 capillary Anatomy 0.000 claims description 20
- 230000009471 action Effects 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 230000006872 improvement Effects 0.000 claims description 3
- 239000011797 cavity material Substances 0.000 description 19
- 239000000463 material Substances 0.000 description 19
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 16
- 230000008569 process Effects 0.000 description 16
- 239000013078 crystal Substances 0.000 description 14
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 11
- 230000012010 growth Effects 0.000 description 10
- 229910052750 molybdenum Inorganic materials 0.000 description 10
- 239000011733 molybdenum Substances 0.000 description 10
- 230000000712 assembly Effects 0.000 description 6
- 238000000429 assembly Methods 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 125000006850 spacer group Chemical group 0.000 description 5
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 239000002223 garnet Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910001602 chrysoberyl Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000036433 growing body Effects 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/005—Simultaneous pulling of more than one crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/66—Crystals of complex geometrical shape, e.g. tubes, cylinders
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
- Y10T117/104—Means for forming a hollow structure [e.g., tube, polygon]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
- Y10T117/1044—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die] including means forming a flat shape [e.g., ribbon]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/558,768 US3953174A (en) | 1975-03-17 | 1975-03-17 | Apparatus for growing crystalline bodies from the melt |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1052667A true CA1052667A (en) | 1979-04-17 |
Family
ID=24230914
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA247,928A Expired CA1052667A (en) | 1975-03-17 | 1976-03-15 | Apparatus for growing crystalline bodies from the melt |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US3953174A (enExample) |
| JP (1) | JPS51132184A (enExample) |
| BE (1) | BE839611A (enExample) |
| CA (1) | CA1052667A (enExample) |
| DE (1) | DE2611056A1 (enExample) |
| FR (1) | FR2304397A1 (enExample) |
| GB (1) | GB1485357A (enExample) |
| IT (1) | IT1057999B (enExample) |
| NL (1) | NL183596C (enExample) |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4028059A (en) * | 1975-12-18 | 1977-06-07 | Tyco Laboratories, Inc. | Multiple dies for ribbon |
| US4075055A (en) * | 1976-04-16 | 1978-02-21 | International Business Machines Corporation | Method and apparatus for forming an elongated silicon crystalline body using a <110>{211}orientated seed crystal |
| US4230674A (en) * | 1976-12-27 | 1980-10-28 | Mobil Tyco Solar Energy Corporation | Crucible-die assemblies for growing crystalline bodies of selected shapes |
| US4289572A (en) * | 1976-12-27 | 1981-09-15 | Dow Corning Corporation | Method of closing silicon tubular bodies |
| US4325917A (en) * | 1977-07-21 | 1982-04-20 | Pelts Boris B | Method and apparatus for producing sapphire tubes |
| AT391887B (de) * | 1977-07-21 | 1990-12-10 | Pelts Boris Bentsionovich Ing | Verfahren zum herstellen von kristallinen saphirrohren und einrichtung zu dessen durchfuehrung |
| US4353875A (en) * | 1978-11-06 | 1982-10-12 | Allied Corporation | Apparatus for growing crystalline materials |
| US4271129A (en) * | 1979-03-06 | 1981-06-02 | Rca Corporation | Heat radiation deflectors within an EFG crucible |
| US4440728A (en) * | 1981-08-03 | 1984-04-03 | Mobil Solar Energy Corporation | Apparatus for growing tubular crystalline bodies |
| USH520H (en) | 1985-12-06 | 1988-09-06 | Technique for increasing oxygen incorporation during silicon czochralski crystal growth | |
| US4721688A (en) * | 1986-09-18 | 1988-01-26 | Mobil Solar Energy Corporation | Method of growing crystals |
| SU1592414A1 (ru) * | 1986-11-26 | 1990-09-15 | Vni Pk T I Elektrotermicheskog | Cпocoб bыpaщиbahия пpoфилиpobahhыx kpиctaллob tугoплabkиx coeдиhehий и уctpoйctbo для eгo ocущectbлehия |
| US4937053A (en) * | 1987-03-27 | 1990-06-26 | Mobil Solar Energy Corporation | Crystal growing apparatus |
| US4786479A (en) * | 1987-09-02 | 1988-11-22 | The United States Of America As Represented By The United States Department Of Energy | Apparatus for dendritic web growth systems |
| WO1992001091A1 (en) * | 1990-07-10 | 1992-01-23 | Saphikon, Inc. | Apparatus for growing hollow crystalline bodies from the melt |
| DE4022389C2 (de) * | 1990-07-13 | 1995-06-08 | Leybold Ag | Schmelz- und Gießofen |
| JPH04317493A (ja) * | 1991-04-15 | 1992-11-09 | Nkk Corp | シリコン単結晶の製造装置 |
| US5543630A (en) * | 1995-01-31 | 1996-08-06 | The United States Of America As Represented By The Secretary Of The Air Force | High Tc superconducting devices on bi-crystal substrates |
| US5754391A (en) * | 1996-05-17 | 1998-05-19 | Saphikon Inc. | Electrostatic chuck |
| US6139811A (en) * | 1999-03-25 | 2000-10-31 | Ase Americas, Inc. | EFG crystal growth apparatus |
| TWI236455B (en) * | 2002-02-27 | 2005-07-21 | Univ Nat Taiwan | Method for growing stoichiometric lithium niobate and lithium tantalate single crystals and apparatus thereof |
| US7348076B2 (en) | 2004-04-08 | 2008-03-25 | Saint-Gobain Ceramics & Plastics, Inc. | Single crystals and methods for fabricating same |
| EP2275772A1 (en) * | 2005-06-10 | 2011-01-19 | Saint-Gobain Ceramics and Plastics, Inc. | Transparent ceramic composite |
| RU2304641C2 (ru) * | 2005-07-08 | 2007-08-20 | Николай Иванович Блецкан | Устройство для выращивания профилированных монокристаллов сапфира |
| KR101353277B1 (ko) * | 2006-09-22 | 2014-01-22 | 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드 | C-플레인 단결정 사파이어 재료의 형성 방법 |
| US20090130415A1 (en) * | 2007-11-21 | 2009-05-21 | Saint-Gobain Ceramics & Plastics, Inc. | R-Plane Sapphire Method and Apparatus |
| JP6025080B1 (ja) * | 2015-12-26 | 2016-11-16 | 並木精密宝石株式会社 | 大型ｅｆｇ法用育成炉の熱反射板構造 |
| US11047650B2 (en) | 2017-09-29 | 2021-06-29 | Saint-Gobain Ceramics & Plastics, Inc. | Transparent composite having a laminated structure |
| US11713520B1 (en) * | 2021-02-08 | 2023-08-01 | Sapphire Systems, Inc. | Targeted heat control system and method for integrated crucible and die system for sapphire sheet growing |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3591348A (en) * | 1968-01-24 | 1971-07-06 | Tyco Laboratories Inc | Method of growing crystalline materials |
| US3687633A (en) * | 1970-08-28 | 1972-08-29 | Tyco Laboratories Inc | Apparatus for growing crystalline bodies from the melt |
| US3870477A (en) * | 1972-07-10 | 1975-03-11 | Tyco Laboratories Inc | Optical control of crystal growth |
-
1975
- 1975-03-17 US US05/558,768 patent/US3953174A/en not_active Expired - Lifetime
-
1976
- 1976-03-08 GB GB9172/76A patent/GB1485357A/en not_active Expired
- 1976-03-15 CA CA247,928A patent/CA1052667A/en not_active Expired
- 1976-03-15 IT IT7648576A patent/IT1057999B/it active
- 1976-03-16 NL NLAANVRAGE7602731,A patent/NL183596C/xx not_active IP Right Cessation
- 1976-03-16 FR FR7607526A patent/FR2304397A1/fr active Granted
- 1976-03-16 DE DE19762611056 patent/DE2611056A1/de not_active Withdrawn
- 1976-03-16 JP JP51028533A patent/JPS51132184A/ja active Granted
- 1976-03-16 BE BE165203A patent/BE839611A/xx not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| GB1485357A (en) | 1977-09-08 |
| FR2304397B1 (enExample) | 1982-04-02 |
| NL7602731A (nl) | 1976-09-21 |
| BE839611A (fr) | 1976-09-16 |
| FR2304397A1 (fr) | 1976-10-15 |
| NL183596C (nl) | 1988-12-01 |
| DE2611056A1 (de) | 1976-09-30 |
| US3953174A (en) | 1976-04-27 |
| JPS51132184A (en) | 1976-11-17 |
| IT1057999B (it) | 1982-03-30 |
| JPS5745713B2 (enExample) | 1982-09-29 |
| NL183596B (nl) | 1988-07-01 |
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