JPS51120682A - Non-volatile variable resistance.element - Google Patents

Non-volatile variable resistance.element

Info

Publication number
JPS51120682A
JPS51120682A JP50045326A JP4532675A JPS51120682A JP S51120682 A JPS51120682 A JP S51120682A JP 50045326 A JP50045326 A JP 50045326A JP 4532675 A JP4532675 A JP 4532675A JP S51120682 A JPS51120682 A JP S51120682A
Authority
JP
Japan
Prior art keywords
variable resistance
volatile variable
resistance
volatile
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50045326A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5323071B2 (enExample
Inventor
Yutaka Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP50045326A priority Critical patent/JPS51120682A/ja
Publication of JPS51120682A publication Critical patent/JPS51120682A/ja
Publication of JPS5323071B2 publication Critical patent/JPS5323071B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
JP50045326A 1975-04-16 1975-04-16 Non-volatile variable resistance.element Granted JPS51120682A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50045326A JPS51120682A (en) 1975-04-16 1975-04-16 Non-volatile variable resistance.element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50045326A JPS51120682A (en) 1975-04-16 1975-04-16 Non-volatile variable resistance.element

Publications (2)

Publication Number Publication Date
JPS51120682A true JPS51120682A (en) 1976-10-22
JPS5323071B2 JPS5323071B2 (enExample) 1978-07-12

Family

ID=12716178

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50045326A Granted JPS51120682A (en) 1975-04-16 1975-04-16 Non-volatile variable resistance.element

Country Status (1)

Country Link
JP (1) JPS51120682A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61131486A (ja) * 1984-11-29 1986-06-19 Res Dev Corp Of Japan 半導体不揮発性メモリ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61131486A (ja) * 1984-11-29 1986-06-19 Res Dev Corp Of Japan 半導体不揮発性メモリ

Also Published As

Publication number Publication date
JPS5323071B2 (enExample) 1978-07-12

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