JPS49114889A - - Google Patents

Info

Publication number
JPS49114889A
JPS49114889A JP49017469A JP1746974A JPS49114889A JP S49114889 A JPS49114889 A JP S49114889A JP 49017469 A JP49017469 A JP 49017469A JP 1746974 A JP1746974 A JP 1746974A JP S49114889 A JPS49114889 A JP S49114889A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP49017469A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS49114889A publication Critical patent/JPS49114889A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/12—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/033—Diffusion of aluminum

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
JP49017469A 1973-02-13 1974-02-13 Pending JPS49114889A (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US331740A US3895975A (en) 1973-02-13 1973-02-13 Method for the post-alloy diffusion of impurities into a semiconductor

Publications (1)

Publication Number Publication Date
JPS49114889A true JPS49114889A (enExample) 1974-11-01

Family

ID=23295183

Family Applications (1)

Application Number Title Priority Date Filing Date
JP49017469A Pending JPS49114889A (enExample) 1973-02-13 1974-02-13

Country Status (10)

Country Link
US (1) US3895975A (enExample)
JP (1) JPS49114889A (enExample)
BE (1) BE810943A (enExample)
CA (1) CA1016848A (enExample)
DE (1) DE2405935C2 (enExample)
FR (1) FR2335040A1 (enExample)
GB (1) GB1452637A (enExample)
IT (1) IT1004927B (enExample)
NL (1) NL7401992A (enExample)
SE (1) SE391607B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5136886A (enExample) * 1974-09-24 1976-03-27 Sony Corp
JPS55158679A (en) * 1979-05-29 1980-12-10 Agency Of Ind Science & Technol Manufacture of solar cell

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4137095A (en) * 1976-07-14 1979-01-30 Solarex Corporation Constant voltage solar cell and method of making same
US4349691A (en) * 1977-04-05 1982-09-14 Solarex Corporation Method of making constant voltage solar cell and product formed thereby utilizing low-temperature aluminum diffusion
JPS5833693B2 (ja) * 1977-08-12 1983-07-21 株式会社日立製作所 半導体装置の製造方法
DE2754652A1 (de) * 1977-12-08 1979-06-13 Ibm Deutschland Verfahren zum herstellen von silicium-photoelementen
US4226017A (en) * 1978-05-15 1980-10-07 Solarex Corporation Method for making a semiconductor device
FR2440083A1 (fr) * 1978-10-26 1980-05-23 Commissariat Energie Atomique Procede de realisation de composants semi-conducteurs presentant des proprietes de conversion opto-electroniques
US4297391A (en) * 1979-01-16 1981-10-27 Solarex Corporation Method of applying electrical contacts to a photovoltaic cell
US6180869B1 (en) * 1997-05-06 2001-01-30 Ebara Solar, Inc. Method and apparatus for self-doping negative and positive electrodes for silicon solar cells and other devices
US6262359B1 (en) * 1999-03-17 2001-07-17 Ebara Solar, Inc. Aluminum alloy back junction solar cell and a process for fabrication thereof
US7790574B2 (en) * 2004-12-20 2010-09-07 Georgia Tech Research Corporation Boron diffusion in silicon devices
JP6367940B2 (ja) * 2013-07-25 2018-08-01 コリア インスチチュート オブ インダストリアル テクノロジー 複合構造のシリコンウエハーの製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4221288Y1 (enExample) * 1964-02-14 1967-12-08

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL97268C (enExample) * 1955-04-22 1900-01-01
US3044147A (en) * 1959-04-21 1962-07-17 Pacific Semiconductors Inc Semiconductor technology method of contacting a body
CH396228A (de) * 1962-05-29 1965-07-31 Siemens Ag Verfahren zum Erzeugen einer hochdotierten p-leitenden Zone in einem Halbleiterkörper, insbesondere aus Silizium
US3123532A (en) * 1963-03-06 1964-03-03 Certificate of correction
US3513040A (en) * 1964-03-23 1970-05-19 Xerox Corp Radiation resistant solar cell
GB1233545A (enExample) * 1967-08-18 1971-05-26
US3577287A (en) * 1968-02-12 1971-05-04 Gen Motors Corp Aluminum diffusion technique
DE1912666A1 (de) * 1969-03-13 1970-09-24 Siemens Ag Verfahren zur Kontaktierung eines Halbleiterkoerpers

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4221288Y1 (enExample) * 1964-02-14 1967-12-08

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5136886A (enExample) * 1974-09-24 1976-03-27 Sony Corp
JPS55158679A (en) * 1979-05-29 1980-12-10 Agency Of Ind Science & Technol Manufacture of solar cell

Also Published As

Publication number Publication date
FR2335040B1 (enExample) 1978-06-23
DE2405935C2 (de) 1983-09-01
SE391607B (sv) 1977-02-21
NL7401992A (enExample) 1974-08-15
BE810943A (fr) 1974-08-13
GB1452637A (en) 1976-10-13
DE2405935A1 (de) 1974-08-15
IT1004927B (it) 1976-07-20
FR2335040A1 (fr) 1977-07-08
AU6529774A (en) 1975-08-07
US3895975A (en) 1975-07-22
CA1016848A (en) 1977-09-06

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