JPS49111585A - - Google Patents
Info
- Publication number
- JPS49111585A JPS49111585A JP2118173A JP2118173A JPS49111585A JP S49111585 A JPS49111585 A JP S49111585A JP 2118173 A JP2118173 A JP 2118173A JP 2118173 A JP2118173 A JP 2118173A JP S49111585 A JPS49111585 A JP S49111585A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Manufacturing Of Printed Circuit Boards (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Drying Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2118173A JPS5235596B2 (es) | 1973-02-23 | 1973-02-23 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2118173A JPS5235596B2 (es) | 1973-02-23 | 1973-02-23 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS49111585A true JPS49111585A (es) | 1974-10-24 |
JPS5235596B2 JPS5235596B2 (es) | 1977-09-09 |
Family
ID=12047752
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2118173A Expired JPS5235596B2 (es) | 1973-02-23 | 1973-02-23 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5235596B2 (es) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5244562A (en) * | 1975-10-07 | 1977-04-07 | Fujitsu Ltd | Epitaxial growth method |
JPS5272172A (en) * | 1975-12-12 | 1977-06-16 | Mitsubishi Electric Corp | Formation of insulator film on semiconductor crystal |
JPS5438770A (en) * | 1977-09-01 | 1979-03-23 | Mitsubishi Electric Corp | Etching device |
JPS5565428A (en) * | 1978-11-10 | 1980-05-16 | Tdk Corp | Direct formation of thin film pattern |
JPS56142630A (en) * | 1980-04-09 | 1981-11-07 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS57500492A (es) * | 1980-05-12 | 1982-03-18 | ||
JPS5892216A (ja) * | 1981-11-27 | 1983-06-01 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JPS58132925A (ja) * | 1982-02-02 | 1983-08-08 | Agency Of Ind Science & Technol | パタ−ン投影によるデバイス製作法 |
JPS59140369A (ja) * | 1983-12-27 | 1984-08-11 | Agency Of Ind Science & Technol | 薄膜製造方法とその装置 |
JPS61119042A (ja) * | 1984-11-15 | 1986-06-06 | Toshiba Corp | 半導体基板中の不純物を分析する為の試料を作成する装置 |
JPS61224387A (ja) * | 1985-03-28 | 1986-10-06 | Rikagaku Kenkyusho | 半導体装置 |
-
1973
- 1973-02-23 JP JP2118173A patent/JPS5235596B2/ja not_active Expired
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5943815B2 (ja) * | 1975-10-07 | 1984-10-24 | 富士通株式会社 | エピタキシヤル成長法 |
JPS5244562A (en) * | 1975-10-07 | 1977-04-07 | Fujitsu Ltd | Epitaxial growth method |
JPS5272172A (en) * | 1975-12-12 | 1977-06-16 | Mitsubishi Electric Corp | Formation of insulator film on semiconductor crystal |
JPS5438770A (en) * | 1977-09-01 | 1979-03-23 | Mitsubishi Electric Corp | Etching device |
JPS5565428A (en) * | 1978-11-10 | 1980-05-16 | Tdk Corp | Direct formation of thin film pattern |
JPS56142630A (en) * | 1980-04-09 | 1981-11-07 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS57500492A (es) * | 1980-05-12 | 1982-03-18 | ||
JPS5892216A (ja) * | 1981-11-27 | 1983-06-01 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JPS58132925A (ja) * | 1982-02-02 | 1983-08-08 | Agency Of Ind Science & Technol | パタ−ン投影によるデバイス製作法 |
JPS59140369A (ja) * | 1983-12-27 | 1984-08-11 | Agency Of Ind Science & Technol | 薄膜製造方法とその装置 |
JPS61119042A (ja) * | 1984-11-15 | 1986-06-06 | Toshiba Corp | 半導体基板中の不純物を分析する為の試料を作成する装置 |
JPH0544830B2 (es) * | 1984-11-15 | 1993-07-07 | Tokyo Shibaura Electric Co | |
JPS61224387A (ja) * | 1985-03-28 | 1986-10-06 | Rikagaku Kenkyusho | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
JPS5235596B2 (es) | 1977-09-09 |