JPS4897457A - - Google Patents

Info

Publication number
JPS4897457A
JPS4897457A JP910973A JP910973A JPS4897457A JP S4897457 A JPS4897457 A JP S4897457A JP 910973 A JP910973 A JP 910973A JP 910973 A JP910973 A JP 910973A JP S4897457 A JPS4897457 A JP S4897457A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP910973A
Other languages
Japanese (ja)
Other versions
JPS5644519B2 (enrdf_load_html_response
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4897457A publication Critical patent/JPS4897457A/ja
Publication of JPS5644519B2 publication Critical patent/JPS5644519B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/02—Contacts, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/055—Fuse

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Read Only Memory (AREA)
JP910973A 1972-01-19 1973-01-19 Expired JPS5644519B2 (enrdf_load_html_response)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US21898872A 1972-01-19 1972-01-19

Publications (2)

Publication Number Publication Date
JPS4897457A true JPS4897457A (enrdf_load_html_response) 1973-12-12
JPS5644519B2 JPS5644519B2 (enrdf_load_html_response) 1981-10-20

Family

ID=22817321

Family Applications (1)

Application Number Title Priority Date Filing Date
JP910973A Expired JPS5644519B2 (enrdf_load_html_response) 1972-01-19 1973-01-19

Country Status (9)

Country Link
US (1) US3792319A (enrdf_load_html_response)
JP (1) JPS5644519B2 (enrdf_load_html_response)
BE (1) BE794202A (enrdf_load_html_response)
CA (1) CA966230A (enrdf_load_html_response)
DE (1) DE2300847C3 (enrdf_load_html_response)
FR (1) FR2168368B1 (enrdf_load_html_response)
GB (1) GB1422045A (enrdf_load_html_response)
IT (1) IT978278B (enrdf_load_html_response)
NL (1) NL7300378A (enrdf_load_html_response)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5267532A (en) * 1975-12-03 1977-06-04 Nippon Telegr & Teleph Corp <Ntt> Semiconductor memory unit
JPS5272541A (en) * 1975-12-15 1977-06-17 Fujitsu Ltd Semi-conductor memory
US4453233A (en) * 1981-02-13 1984-06-05 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor memory device and method of manufacturing the same
JPH01122451A (ja) * 1987-11-06 1989-05-15 Seiko Instr & Electron Ltd サーマルヘッド及びその製造方法

Families Citing this family (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4032949A (en) * 1975-05-15 1977-06-28 Raytheon Company Integrated circuit fusing technique
US4042950A (en) * 1976-03-01 1977-08-16 Advanced Micro Devices, Inc. Platinum silicide fuse links for integrated circuit devices
DE2625089A1 (de) * 1976-06-04 1977-12-15 Bosch Gmbh Robert Anordnung zum auftrennen von leiterbahnen auf integrierten schaltkreisen
US4133000A (en) * 1976-12-13 1979-01-02 General Motors Corporation Integrated circuit process compatible surge protection resistor
CA1135854A (en) * 1977-09-30 1982-11-16 Michel Moussie Programmable read only memory cell
JPS607388B2 (ja) * 1978-09-08 1985-02-23 富士通株式会社 半導体記憶装置
US4192016A (en) * 1978-10-20 1980-03-04 Harris Semiconductor CMOS-bipolar EAROM
US4238839A (en) * 1979-04-19 1980-12-09 National Semiconductor Corporation Laser programmable read only memory
JPS5847596Y2 (ja) * 1979-09-05 1983-10-29 富士通株式会社 半導体装置
DE3036869C2 (de) * 1979-10-01 1985-09-05 Hitachi, Ltd., Tokio/Tokyo Integrierte Halbleiterschaltung und Schaltkreisaktivierverfahren
JPS5685934A (en) * 1979-12-14 1981-07-13 Nippon Telegr & Teleph Corp <Ntt> Control signal generating circuit
US4476478A (en) * 1980-04-24 1984-10-09 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor read only memory and method of making the same
JPS5834945B2 (ja) 1980-06-02 1983-07-29 株式会社東芝 ヒユ−ズ形ｐｒｏｍ半導体装置
JPS5720463A (en) * 1980-07-14 1982-02-02 Toshiba Corp Semiconductor memory device
JPS5763854A (en) * 1980-10-07 1982-04-17 Toshiba Corp Semiconductor device
JPS5846174B2 (ja) * 1981-03-03 1983-10-14 株式会社東芝 半導体集積回路
JPS58170A (ja) * 1981-06-24 1983-01-05 Mitsubishi Electric Corp 半導体装置
US4403399A (en) * 1981-09-28 1983-09-13 Harris Corporation Method of fabricating a vertical fuse utilizing epitaxial deposition and special masking
JPS5856355A (ja) * 1981-09-30 1983-04-04 Hitachi Ltd 半導体集積回路装置
US4432070A (en) * 1981-09-30 1984-02-14 Monolithic Memories, Incorporated High speed PROM device
DE3276981D1 (en) * 1981-10-09 1987-09-17 Toshiba Kk Semiconductor device having a fuse element
US4814853A (en) * 1981-10-28 1989-03-21 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor device with programmable fuse
US4518981A (en) * 1981-11-12 1985-05-21 Advanced Micro Devices, Inc. Merged platinum silicide fuse and Schottky diode and method of manufacture thereof
JPS58153297A (ja) * 1982-03-09 1983-09-12 Toshiba Corp メモリ用ｉｃのヒユ−ズ
EP0094073B1 (en) * 1982-05-12 1988-07-27 Kabushiki Kaisha Toshiba Semiconductor device capable of structural selection
JPS59105354A (ja) * 1982-12-09 1984-06-18 Toshiba Corp 半導体装置
US4454002A (en) * 1983-09-19 1984-06-12 Harris Corporation Controlled thermal-oxidation thinning of polycrystalline silicon
JPS6065545A (ja) * 1983-09-21 1985-04-15 Hitachi Micro Comput Eng Ltd 半導体装置の製造方法
US4609998A (en) * 1983-12-15 1986-09-02 Monolithic Memories, Inc. High conductance circuit for programmable integrated circuit
US4646427A (en) * 1984-06-28 1987-03-03 Motorola, Inc. Method of electrically adjusting the zener knee of a lateral polysilicon zener diode
FR2633420B1 (fr) * 1988-06-28 1992-02-21 Schlumberger Ind Sa Support d'informations et systeme de gestion de tels supports
US4910418A (en) * 1988-12-29 1990-03-20 Gazelle Microcircuits, Inc. Semiconductor fuse programmable array structure
US5025300A (en) * 1989-06-30 1991-06-18 At&T Bell Laboratories Integrated circuits having improved fusible links
US5989943A (en) * 1989-09-07 1999-11-23 Quicklogic Corporation Method for fabrication of programmable interconnect structure
US5502315A (en) * 1989-09-07 1996-03-26 Quicklogic Corporation Electrically programmable interconnect structure having a PECVD amorphous silicon element
US5196724A (en) * 1991-04-26 1993-03-23 Quicklogic Corporation Programmable interconnect structures and programmable integrated circuits
US5701027A (en) * 1991-04-26 1997-12-23 Quicklogic Corporation Programmable interconnect structures and programmable integrated circuits
US5557136A (en) * 1991-04-26 1996-09-17 Quicklogic Corporation Programmable interconnect structures and programmable integrated circuits
US5525827A (en) * 1993-11-05 1996-06-11 Norman; Kevin A. Unerasable electronic programmable read only memory (UPROM™)
US5622892A (en) * 1994-06-10 1997-04-22 International Business Machines Corporation Method of making a self cooling electrically programmable fuse
JPH08222710A (ja) 1995-02-17 1996-08-30 Mitsubishi Electric Corp 半導体装置
US5521116A (en) * 1995-04-24 1996-05-28 Texas Instruments Incorporated Sidewall formation process for a top lead fuse
US5998759A (en) * 1996-12-24 1999-12-07 General Scanning, Inc. Laser processing
US5976943A (en) * 1996-12-27 1999-11-02 Vlsi Technology, Inc. Method for bi-layer programmable resistor
US5909049A (en) * 1997-02-11 1999-06-01 Actel Corporation Antifuse programmed PROM cell
US5834356A (en) * 1997-06-27 1998-11-10 Vlsi Technology, Inc. Method of making high resistive structures in salicided process semiconductor devices
US6159844A (en) * 1998-05-29 2000-12-12 Philips Electronics North America Corp. Fabrication of gate and diffusion contacts in self-aligned contact process
US6080661A (en) * 1998-05-29 2000-06-27 Philips Electronics North America Corp. Methods for fabricating gate and diffusion contacts in self-aligned contact processes
US6121074A (en) * 1998-11-05 2000-09-19 Siemens Aktiengesellschaft Fuse layout for improved fuse blow process window
US6300590B1 (en) * 1998-12-16 2001-10-09 General Scanning, Inc. Laser processing
US6323534B1 (en) * 1999-04-16 2001-11-27 Micron Technology, Inc. Fuse for use in a semiconductor device
FR2792775B1 (fr) * 1999-04-20 2001-11-23 France Telecom Dispositif de circuit integre comprenant une inductance a haut coefficient de qualite
US20030222272A1 (en) * 2002-05-30 2003-12-04 Hamerski Roman J. Semiconductor devices using minority carrier controlling substances
US7661464B2 (en) * 2005-12-09 2010-02-16 Alliant Techsystems Inc. Evaporator for use in a heat transfer system
US7551470B2 (en) * 2006-10-19 2009-06-23 International Business Machines Corporation Non volatile memory RAD-hard (NVM-rh) system
JP5149576B2 (ja) * 2007-09-21 2013-02-20 パナソニック株式会社 半導体装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3028659A (en) * 1957-12-27 1962-04-10 Bosch Arma Corp Storage matrix
US3191151A (en) * 1962-11-26 1965-06-22 Fairchild Camera Instr Co Programmable circuit
YU32377B (en) * 1967-05-30 1974-10-31 Olivetti General Electric Spa Integralni sklop za elektronska strujna kola u cvrstom stanju
US3519901A (en) * 1968-01-29 1970-07-07 Texas Instruments Inc Bi-layer insulation structure including polycrystalline semiconductor material for integrated circuit isolation
US3564354A (en) * 1968-12-11 1971-02-16 Signetics Corp Semiconductor structure with fusible link and method
US3699395A (en) * 1970-01-02 1972-10-17 Rca Corp Semiconductor devices including fusible elements
US3699403A (en) * 1970-10-23 1972-10-17 Rca Corp Fusible semiconductor device including means for reducing the required fusing current

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5267532A (en) * 1975-12-03 1977-06-04 Nippon Telegr & Teleph Corp <Ntt> Semiconductor memory unit
JPS5272541A (en) * 1975-12-15 1977-06-17 Fujitsu Ltd Semi-conductor memory
US4453233A (en) * 1981-02-13 1984-06-05 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor memory device and method of manufacturing the same
JPH01122451A (ja) * 1987-11-06 1989-05-15 Seiko Instr & Electron Ltd サーマルヘッド及びその製造方法

Also Published As

Publication number Publication date
FR2168368A1 (enrdf_load_html_response) 1973-08-31
US3792319A (en) 1974-02-12
NL7300378A (enrdf_load_html_response) 1973-07-23
CA966230A (en) 1975-04-15
DE2300847C3 (de) 1975-09-11
GB1422045A (en) 1976-01-21
BE794202A (fr) 1973-05-16
DE2300847B2 (de) 1975-01-30
IT978278B (it) 1974-09-20
DE2300847A1 (de) 1973-07-26
JPS5644519B2 (enrdf_load_html_response) 1981-10-20
FR2168368B1 (enrdf_load_html_response) 1976-05-14

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