JPS4866773A - - Google Patents

Info

Publication number
JPS4866773A
JPS4866773A JP47119485A JP11948572A JPS4866773A JP S4866773 A JPS4866773 A JP S4866773A JP 47119485 A JP47119485 A JP 47119485A JP 11948572 A JP11948572 A JP 11948572A JP S4866773 A JPS4866773 A JP S4866773A
Authority
JP
Japan
Prior art keywords
substrate
doped
semi
deposited
epitaxially deposited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP47119485A
Other languages
English (en)
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4866773A publication Critical patent/JPS4866773A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP47119485A 1971-12-10 1972-11-30 Pending JPS4866773A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1801771A CH572985A5 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1971-12-10 1971-12-10

Publications (1)

Publication Number Publication Date
JPS4866773A true JPS4866773A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1973-09-12

Family

ID=4429804

Family Applications (1)

Application Number Title Priority Date Filing Date
JP47119485A Pending JPS4866773A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1971-12-10 1972-11-30

Country Status (5)

Country Link
JP (1) JPS4866773A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CH (1) CH572985A5 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE2255508A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2162373B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB1372610A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5154366A (ja) * 1974-11-06 1976-05-13 Mitsubishi Electric Corp Handotaiepitakishiaruehaa
JPS5264272A (en) * 1975-11-22 1977-05-27 Fujitsu Ltd Semiconductor crystal
JPS61158185A (ja) * 1984-12-28 1986-07-17 Hosiden Electronics Co Ltd 薄膜トランジスタ
JPH07263465A (ja) * 1994-03-24 1995-10-13 Nec Corp 半導体素子

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2447612A1 (fr) * 1979-01-26 1980-08-22 Thomson Csf Composant semi-conducteur a heterojonction

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5154366A (ja) * 1974-11-06 1976-05-13 Mitsubishi Electric Corp Handotaiepitakishiaruehaa
JPS5264272A (en) * 1975-11-22 1977-05-27 Fujitsu Ltd Semiconductor crystal
JPS61158185A (ja) * 1984-12-28 1986-07-17 Hosiden Electronics Co Ltd 薄膜トランジスタ
JPH07263465A (ja) * 1994-03-24 1995-10-13 Nec Corp 半導体素子

Also Published As

Publication number Publication date
DE2255508A1 (de) 1973-06-20
FR2162373A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1973-07-20
FR2162373B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1978-03-03
GB1372610A (en) 1974-10-30
CH572985A5 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1976-02-27

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