JPS4421068Y1 - - Google Patents

Info

Publication number
JPS4421068Y1
JPS4421068Y1 JP1966090499U JP9049966U JPS4421068Y1 JP S4421068 Y1 JPS4421068 Y1 JP S4421068Y1 JP 1966090499 U JP1966090499 U JP 1966090499U JP 9049966 U JP9049966 U JP 9049966U JP S4421068 Y1 JPS4421068 Y1 JP S4421068Y1
Authority
JP
Japan
Prior art keywords
region
angle
edges
impurity concentration
sept
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1966090499U
Other languages
English (en)
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1966090499U priority Critical patent/JPS4421068Y1/ja
Priority to GB44214/67A priority patent/GB1186620A/en
Priority to NL6713183A priority patent/NL6713183A/xx
Priority to BE704436D priority patent/BE704436A/xx
Priority to FR122809A priority patent/FR1540589A/fr
Publication of JPS4421068Y1 publication Critical patent/JPS4421068Y1/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00Thyristors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00Thyristors
    • H10D18/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30Devices controlled by electric currents or voltages
    • H10D48/38Devices controlled only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117Shapes of semiconductor bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/192Base regions of thyristors
    • H10D62/199Anode base regions of thyristors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/192Base regions of thyristors
    • H10D62/206Cathode base regions of thyristors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00Bonding of wafers, substrates or parts of devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00Cutting or separating of wafers, substrates or parts of devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Thyristors (AREA)
JP1966090499U 1966-09-29 1966-09-29 Expired JPS4421068Y1 (enExample)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP1966090499U JPS4421068Y1 (enExample) 1966-09-29 1966-09-29
GB44214/67A GB1186620A (en) 1966-09-29 1967-09-28 Improvements in Semiconductor Controlled Rectifiers
NL6713183A NL6713183A (enExample) 1966-09-29 1967-09-28
BE704436D BE704436A (enExample) 1966-09-29 1967-09-28
FR122809A FR1540589A (fr) 1966-09-29 1967-09-29 Redresseur contrôlé à semi-conducteur du type conique

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1966090499U JPS4421068Y1 (enExample) 1966-09-29 1966-09-29

Publications (1)

Publication Number Publication Date
JPS4421068Y1 true JPS4421068Y1 (enExample) 1969-09-08

Family

ID=14000179

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1966090499U Expired JPS4421068Y1 (enExample) 1966-09-29 1966-09-29

Country Status (4)

Country Link
JP (1) JPS4421068Y1 (enExample)
BE (1) BE704436A (enExample)
GB (1) GB1186620A (enExample)
NL (1) NL6713183A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5735056U (enExample) * 1973-08-08 1982-02-24

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5735056U (enExample) * 1973-08-08 1982-02-24

Also Published As

Publication number Publication date
BE704436A (enExample) 1968-02-01
NL6713183A (enExample) 1968-04-01
GB1186620A (en) 1970-04-02

Similar Documents

Publication Publication Date Title
GB1319796A (en) Avalanche diodes
GB1277246A (en) Controlled rectifier having auxiliary cathode
IE32729L (en) Drift field thyristor
US3255055A (en) Semiconductor device
GB1191890A (en) Semiconductor Controlled Rectifier Devices
GB1175049A (en) Controllable tunnel diode
GB1134019A (en) Improvements in semi-conductor devices
JPS4421068Y1 (enExample)
GB1502122A (en) Semiconductor devices
GB1094336A (en) Thyristors
GB1477179A (en) Power semi-conductor element
GB1520125A (en) Low-noise barrier injection transit time diode
GB1239595A (enExample)
GB1162470A (en) Improvements in and relating to a Controllable Rectifier.
GB1188688A (en) Semi-conductor Device
GB1193716A (en) Improvements in and relating to Semiconductor Devices
GB1102197A (en) Semi-conductor elements
GB1138799A (en) Avalanche transistor employing depletion layer contour control
GB1256161A (en) Improvements relating to four-layer semi-conductor devices
JPS4819113B1 (enExample)
GB965289A (en) Diffused junction type silicon rectifier units
GB1089407A (en) Improvements in thyristors
GB1126459A (en) Improvements relating to controllable semiconductor rectifiers
GB1448150A (en) Thyristors
GB1106637A (en) Controllable semi-conductor device