GB1138799A - Avalanche transistor employing depletion layer contour control - Google Patents
Avalanche transistor employing depletion layer contour controlInfo
- Publication number
- GB1138799A GB1138799A GB5788867A GB5788867A GB1138799A GB 1138799 A GB1138799 A GB 1138799A GB 5788867 A GB5788867 A GB 5788867A GB 5788867 A GB5788867 A GB 5788867A GB 1138799 A GB1138799 A GB 1138799A
- Authority
- GB
- United Kingdom
- Prior art keywords
- depletion layer
- junction
- edge
- avalanche
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000015556 catabolic process Effects 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 230000000295 complement effect Effects 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/16—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
1,138,799. Semi-conductor devices. ITT INDUSTRIES Inc. 20 Dec., 1967 [29 Dec., 1966], No. 57888/67. Heading H1K. A controllable avalance device comprises a planar junction, the edge of which curves towards surface of the body and a field electrode located over the edge of the junction, the arrangement being such that avalanche breakdown occurs at the curved portion of the junction and the contour of the depletion layer at this region is varied by the bias on the field electrode to control the avalanche current. As shown, Fig. 1, a thin highly doped P-type region 2 is diffused into an N-type silicon body 3 having an N+type layer 4 on its lower face. The top surface of the body is provided with a thin layer 10 of silicon oxide and aluminium source drain and gate electrodes 6, 7, and 5 are deposited by evaporation through masks. Complementary devices may also be produced. In use the source and drain electrodes are connected so that the PN junction 18 is reverse biased and avalanche breakdown occurs at the curved area 11 of the depletion layer. Increasing negative bias applied to the gate electrode 5 alters the shape of the edge of the depletion layer as indicated at B and C, thus reducing the avalanche current.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US60563766A | 1966-12-29 | 1966-12-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1138799A true GB1138799A (en) | 1969-01-01 |
Family
ID=24424552
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB5788867A Expired GB1138799A (en) | 1966-12-29 | 1967-12-20 | Avalanche transistor employing depletion layer contour control |
Country Status (2)
| Country | Link |
|---|---|
| FR (1) | FR1549867A (en) |
| GB (1) | GB1138799A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2776838A1 (en) * | 1998-03-26 | 1999-10-01 | Sgs Thomson Microelectronics | METHOD FOR MANUFACTURING A ZENER-TYPE DIODE WITH VARIABLE THRESHOLD |
-
1967
- 1967-12-20 GB GB5788867A patent/GB1138799A/en not_active Expired
- 1967-12-28 FR FR1549867D patent/FR1549867A/fr not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2776838A1 (en) * | 1998-03-26 | 1999-10-01 | Sgs Thomson Microelectronics | METHOD FOR MANUFACTURING A ZENER-TYPE DIODE WITH VARIABLE THRESHOLD |
| EP0949683A1 (en) * | 1998-03-26 | 1999-10-13 | STMicroelectronics SA | Zener diodes assembly |
Also Published As
| Publication number | Publication date |
|---|---|
| FR1549867A (en) | 1968-12-13 |
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