JPH1174526A5 - - Google Patents

Info

Publication number
JPH1174526A5
JPH1174526A5 JP1998185300A JP18530098A JPH1174526A5 JP H1174526 A5 JPH1174526 A5 JP H1174526A5 JP 1998185300 A JP1998185300 A JP 1998185300A JP 18530098 A JP18530098 A JP 18530098A JP H1174526 A5 JPH1174526 A5 JP H1174526A5
Authority
JP
Japan
Prior art keywords
forming
gate electrode
trench
insulating film
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1998185300A
Other languages
English (en)
Japanese (ja)
Other versions
JP4112690B2 (ja
JPH1174526A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP18530098A priority Critical patent/JP4112690B2/ja
Priority claimed from JP18530098A external-priority patent/JP4112690B2/ja
Publication of JPH1174526A publication Critical patent/JPH1174526A/ja
Publication of JPH1174526A5 publication Critical patent/JPH1174526A5/ja
Application granted granted Critical
Publication of JP4112690B2 publication Critical patent/JP4112690B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP18530098A 1997-06-30 1998-06-30 半導体装置の製造方法 Expired - Fee Related JP4112690B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18530098A JP4112690B2 (ja) 1997-06-30 1998-06-30 半導体装置の製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP9-174195 1997-06-30
JP17419597 1997-06-30
JP18530098A JP4112690B2 (ja) 1997-06-30 1998-06-30 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JPH1174526A JPH1174526A (ja) 1999-03-16
JPH1174526A5 true JPH1174526A5 (enrdf_load_html_response) 2005-04-07
JP4112690B2 JP4112690B2 (ja) 2008-07-02

Family

ID=26495893

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18530098A Expired - Fee Related JP4112690B2 (ja) 1997-06-30 1998-06-30 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JP4112690B2 (enrdf_load_html_response)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19933418B4 (de) * 1999-07-16 2005-09-29 Robert Bosch Gmbh Verfahren zur Herstellung von mikromechanischen Bauelementen
KR100467020B1 (ko) * 2002-07-26 2005-01-24 삼성전자주식회사 자기 정렬된 접합영역 콘택홀을 갖는 반도체 장치 및 그제조 방법
KR100499159B1 (ko) * 2003-02-28 2005-07-01 삼성전자주식회사 리세스 채널을 갖는 반도체장치 및 그 제조방법
JP4552603B2 (ja) * 2004-11-08 2010-09-29 エルピーダメモリ株式会社 半導体装置の製造方法
JP2007194562A (ja) * 2006-01-23 2007-08-02 Nec Electronics Corp 半導体装置及びその製造方法
JP4983101B2 (ja) * 2006-06-02 2012-07-25 ソニー株式会社 半導体装置の製造方法
US9431545B2 (en) 2011-09-23 2016-08-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8637864B2 (en) 2011-10-13 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
JP5912394B2 (ja) 2011-10-13 2016-04-27 株式会社半導体エネルギー研究所 半導体装置
JP6053490B2 (ja) 2011-12-23 2016-12-27 株式会社半導体エネルギー研究所 半導体装置の作製方法

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