JPH1166874A - 不揮発性半導体記憶装置 - Google Patents

不揮発性半導体記憶装置

Info

Publication number
JPH1166874A
JPH1166874A JP21480797A JP21480797A JPH1166874A JP H1166874 A JPH1166874 A JP H1166874A JP 21480797 A JP21480797 A JP 21480797A JP 21480797 A JP21480797 A JP 21480797A JP H1166874 A JPH1166874 A JP H1166874A
Authority
JP
Japan
Prior art keywords
potential
line
circuit
selection
word line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21480797A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1166874A5 (enExample
Inventor
Yasuhiro Yamamoto
泰弘 山本
Yoshikazu Miyawaki
好和 宮脇
Masaaki Mihara
雅章 三原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP21480797A priority Critical patent/JPH1166874A/ja
Priority to US09/027,194 priority patent/US5959890A/en
Publication of JPH1166874A publication Critical patent/JPH1166874A/ja
Publication of JPH1166874A5 publication Critical patent/JPH1166874A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
JP21480797A 1997-08-08 1997-08-08 不揮発性半導体記憶装置 Pending JPH1166874A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP21480797A JPH1166874A (ja) 1997-08-08 1997-08-08 不揮発性半導体記憶装置
US09/027,194 US5959890A (en) 1997-08-08 1998-02-20 Non-volatile semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21480797A JPH1166874A (ja) 1997-08-08 1997-08-08 不揮発性半導体記憶装置

Publications (2)

Publication Number Publication Date
JPH1166874A true JPH1166874A (ja) 1999-03-09
JPH1166874A5 JPH1166874A5 (enExample) 2005-05-19

Family

ID=16661857

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21480797A Pending JPH1166874A (ja) 1997-08-08 1997-08-08 不揮発性半導体記憶装置

Country Status (2)

Country Link
US (1) US5959890A (enExample)
JP (1) JPH1166874A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005149695A (ja) * 2003-11-18 2005-06-09 Hynix Semiconductor Inc Ｎａｎｄフラッシュメモリ素子のしきい電圧測定方法

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3694422B2 (ja) * 1999-06-21 2005-09-14 シャープ株式会社 ロウデコーダ回路
JP4057756B2 (ja) * 2000-03-01 2008-03-05 松下電器産業株式会社 半導体集積回路
DE10026275A1 (de) * 2000-05-26 2001-12-13 Infineon Technologies Ag Verfahren zum Testen einer Vielzahl von Wortleitungen einer Halbleiterspeicheranordnung
DE60329899D1 (de) * 2003-04-30 2009-12-17 St Microelectronics Srl Ein Wortleitungstreiber mit vollem Spannungshub für einen nichtflüchtigen Speicher
US6977861B1 (en) * 2004-08-05 2005-12-20 Oki Electric Industry Co., Ltd. Nonvolatile semiconductor memory device
US7424663B2 (en) * 2005-01-19 2008-09-09 Intel Corporation Lowering voltage for cache memory operation
US11948629B2 (en) 2005-09-30 2024-04-02 Mosaid Technologies Incorporated Non-volatile memory device with concurrent bank operations
US7652922B2 (en) * 2005-09-30 2010-01-26 Mosaid Technologies Incorporated Multiple independent serial link memory
KR101260632B1 (ko) 2005-09-30 2013-05-03 모사이드 테크놀로지스 인코퍼레이티드 출력 제어 메모리
US7688652B2 (en) * 2007-07-18 2010-03-30 Mosaid Technologies Incorporated Storage of data in memory via packet strobing
US8825939B2 (en) * 2007-12-12 2014-09-02 Conversant Intellectual Property Management Inc. Semiconductor memory device suitable for interconnection in a ring topology
US8825967B2 (en) 2011-12-08 2014-09-02 Conversant Intellectual Property Management Inc. Independent write and read control in serially-connected devices
JP2017147005A (ja) * 2016-02-16 2017-08-24 ルネサスエレクトロニクス株式会社 フラッシュメモリ

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0521812A (ja) * 1991-07-16 1993-01-29 Toshiba Corp 不揮発性半導体メモリ
JPH06162787A (ja) * 1992-11-17 1994-06-10 Matsushita Electric Ind Co Ltd 電気的一括消去機能を有する不揮発性メモリの読み出し方法
JP3743453B2 (ja) * 1993-01-27 2006-02-08 セイコーエプソン株式会社 不揮発性半導体記憶装置
JP3397407B2 (ja) * 1993-12-14 2003-04-14 三菱電機システムエル・エス・アイ・デザイン株式会社 不揮発性半導体記憶装置及びその消去方法
DE69529367T2 (de) * 1994-08-19 2004-01-22 Kabushiki Kaisha Toshiba, Kawasaki Halbleiterspeicheranordnung und hochspannungsschaltende Schaltung
US5602779A (en) * 1994-11-11 1997-02-11 Nkk Corporation Nonvolatile multivalue memory
KR0145225B1 (ko) * 1995-04-27 1998-08-17 김광호 블럭 단위로 스트레스 가능한 회로
US5604711A (en) * 1995-05-19 1997-02-18 Cypress Semiconductor, Corporation Low power high voltage switch with gate bias circuit to minimize power consumption

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005149695A (ja) * 2003-11-18 2005-06-09 Hynix Semiconductor Inc Ｎａｎｄフラッシュメモリ素子のしきい電圧測定方法

Also Published As

Publication number Publication date
US5959890A (en) 1999-09-28

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