JPH11512518A - 表面プラズモン共鳴質量分析法 - Google Patents
表面プラズモン共鳴質量分析法Info
- Publication number
- JPH11512518A JPH11512518A JP9511430A JP51143097A JPH11512518A JP H11512518 A JPH11512518 A JP H11512518A JP 9511430 A JP9511430 A JP 9511430A JP 51143097 A JP51143097 A JP 51143097A JP H11512518 A JPH11512518 A JP H11512518A
- Authority
- JP
- Japan
- Prior art keywords
- analyte
- interaction
- conductive material
- plasmon resonance
- mass spectrometry
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J49/00—Particle spectrometers or separator tubes
- H01J49/02—Details
- H01J49/04—Arrangements for introducing or extracting samples to be analysed, e.g. vacuum locks; Arrangements for external adjustment of electron- or ion-optical components
- H01J49/0409—Sample holders or containers
- H01J49/0418—Sample holders or containers for laser desorption, e.g. matrix-assisted laser desorption/ionisation [MALDI] plates or surface enhanced laser desorption/ionisation [SELDI] plates
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/55—Specular reflectivity
- G01N21/552—Attenuated total reflection
- G01N21/553—Attenuated total reflection and using surface plasmons
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J49/00—Particle spectrometers or separator tubes
- H01J49/02—Details
- H01J49/10—Ion sources; Ion guns
- H01J49/16—Ion sources; Ion guns using surface ionisation, e.g. field-, thermionic- or photo-emission
- H01J49/161—Ion sources; Ion guns using surface ionisation, e.g. field-, thermionic- or photo-emission using photoionisation, e.g. by laser
- H01J49/164—Laser desorption/ionisation, e.g. matrix-assisted laser desorption/ionisation [MALDI]
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Plasma & Fusion (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1.サンプル内の分析物を分析および同定する方法であって、 該分析物を、表面プラズモン共鳴を支持することができる導電材料に固定され た相互作用表面層に接触させることによって該分析物を捕捉することであって、 該導電材料が、該相互作用表面層に固定された前面と、透明層に固定された後面 とを有する、該分析物を捕捉することと、 光が該導電材料の該後面から反射し、該導電層と該相互作用表面層との間の界 面における表面プラズモンを励起するように、変化する入射角または波長で該透 明層を通して光を方向づけることと、 該反射光の強度が表面プラズモン共鳴により最小値をとる入射角または波長を 検出し、該相互作用表面層によって捕捉された該分析物によって引き起こされた 角または波長の変化を決定することと、 質量分析計内を真空下において、該分析物を該相互作用表面層から脱着/イオ ン化することによって該分析物の質量スペクトルを測定することと、 を包含する方法。 2.前記導電材料および前記透明層に固定された前記相互作用表面層が、チップ の形態である、請求項1に記載の方法。 3.前記導電材料および前記透明層に固定された前記相互作用表面層が、光ファ イバの形態である、請求項1に記載の方法。 4.前記相互作用表面層がヒドロゲルである、請求項1に記載の方法。 5.前記ヒドロゲルが多糖のヒドロゲルである、請求項4に記載の方法。 6.前記多糖がカルボキシル化デキストランである、請求項5に記載の方法。 7.前記導電材料が金属である、請求項1に記載の方法。 8.前記金属が金である、請求項7に記載の方法。 9.前記透明層がガラスである、請求項1に記載の方法。 10.前記光が偏光である、請求項1に記載の方法。 11.前記分析物が、前記相互作用層に入射する(striking)レーザによって脱着/ イオン化される、請求項1に記載の方法。 12.前記分析物が、レーザ光が、前記導電材料の前記前面に入射する前に前記相 互作用層を通過するように、該相互作用層に方向づけられる該レーザ光によって 脱着/イオン化される、請求項11に記載の方法。 13.前記分析物が、レーザ光が、前記導電材料の前記後面に入射し、前記導電材 料を通過し、前記相互作用に到達するように、該相互作用層に方向づけられる該 レーザ光によって脱着/イオン化される、請求項11に記載の方法。 14.前記分析物が、脱着/イオン化される前に、レーザ脱着/イオン化マトリク スと接触される、請求項1に記載の方法。 15.透明材料と、 該透明材料に固定された、表面プラズモン共鳴を支持することができる導電材 料と、 該導電材料に固定された相互作用表面と、 質量分析計内の真空状態を保ちながら、該質量分析計の内部に前記相互作用表 面を曝す手段と、 を有する、表面プラズモン共鳴−質量分析デバイス。 16.前記導電材料が、前記質量分析計と電気的に接触している、請求項15に記載 の表面プラズモン共鳴−質量分析デバイス。 17.前記曝す手段が、金属プローブであり、前記透明材料が該金属プローブに固 定されている、請求項15に記載の表面プラズモン共鳴−質量分析デバイス。 18.前記導電材料が前記金属プローブと電気的に接触している、請求項17に記載 の表面プラズモン共鳴−質量分析デバイス。 19.前記曝す手段が非導電材料である、請求項15に記載の表面プラズモン共鳴− 質量分析デバイス。 20.前記導電材料が、前記非導電材料とシール可能に接触している、請求項19に 記載の表面プラズモン共鳴−質量分析デバイス。 21.前記透明材料がガラスである、請求項15に記載の表面プラズモン共鳴−質量 分析デバイス。 22.前記導電材料が金属である、請求項15に記載の表面プラズモン共鳴−質量分 析デバイス。 23.前記金属が金および銀から選択される、請求項22に記載の表面プラズモン共 鳴−質量分析デバイス。 24.前記金属が金である、請求項22に記載の表面プラズモン共鳴−質量分析デバ イス。 25.前記相互作用表面がヒドロゲルを含む、請求項15に記載の表面プラズモン共 鳴−質量分析デバイス。 26.前記ヒドロゲルが、多糖のヒドロゲルである、請求項25に記載の表面プラズ モン共鳴−質量分析デバイス。 27.前記多糖がカルボキシル化デキストランである、請求項26に記載の表面プラ ズモン共鳴−質量分析デバイス。 28.前記相互作用表面が前記導電材料にリンカーを介して取り付けられている、 請求項15に記載の表面プラズモン共鳴−質量分析デバイス。 29.前記透明材料および前記導電材料がチップの形態である、請求項15に記載の 表面プラズモン共鳴−質量分析デバイス。 30.前記透明材料および前記導電材料が光ファイバの形態である、請求項15に記 載の表面プラズモン共鳴−質量分析デバイス。 31.請求項15から30のいずれか1つに記載の前記表面プラズモン共鳴−質量分析 デバイスを有する質量分光計。 32.表面分析−質量分析をサンプルに対して実施する方法であって、 相互作用分析センサの相互作用表面層によって該サンプル内に存在する分析物 を捕捉することと、 該分析物が該相互作用分析センサの該相互作用表面層によって捕捉されている 間に、該分析物をリアルタイム非標識表面分析技術によって分析することと、 質量分析計内を真空下において、該分析物を該相互作用分析センサの該相互作 用表面層から脱着/イオン化することによって該捕捉された分析物を同定するこ とと、 を包含する方法。 33.前記表面分析技術が光学的方法である、請求項32に記載の方法。 34.前記表面分析技術が表面プラズモン共鳴である、請求項32に記載の方法。 35.前記相互作用分析センサがセンサチップである、請求項32に記載の方法。 36.前記相互作用分析センサが光ファイバセンサである、請求項32に記載の方法 。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9518429.7 | 1995-09-08 | ||
GBGB9518429.7A GB9518429D0 (en) | 1995-09-08 | 1995-09-08 | A rapid method for providing kinetic and structural data in molecular interaction analysis |
PCT/US1996/014372 WO1997009608A1 (en) | 1995-09-08 | 1996-09-06 | Surface plasmon resonance-mass spectrometry |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH11512518A true JPH11512518A (ja) | 1999-10-26 |
JP3930563B2 JP3930563B2 (ja) | 2007-06-13 |
Family
ID=10780447
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP51143097A Expired - Fee Related JP3930563B2 (ja) | 1995-09-08 | 1996-09-06 | 表面プラズモン共鳴質量分析法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US5955729A (ja) |
EP (1) | EP0850407B1 (ja) |
JP (1) | JP3930563B2 (ja) |
AU (1) | AU7015596A (ja) |
DE (1) | DE69629037T2 (ja) |
GB (1) | GB9518429D0 (ja) |
WO (1) | WO1997009608A1 (ja) |
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JP2004020267A (ja) * | 2002-06-13 | 2004-01-22 | Fuji Photo Film Co Ltd | 測定装置および該測定装置の使用方法 |
JP2006511791A (ja) * | 2002-11-19 | 2006-04-06 | バイアコア アーベー | 固定化方法 |
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WO2007097285A1 (ja) * | 2006-02-22 | 2007-08-30 | Tokyo Metropolitan University | 全反射レーザー照射法を用いた質量分析測定の定量化 |
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- 1996-09-06 EP EP96931486A patent/EP0850407B1/en not_active Revoked
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Also Published As
Publication number | Publication date |
---|---|
DE69629037T2 (de) | 2004-01-15 |
EP0850407A1 (en) | 1998-07-01 |
EP0850407B1 (en) | 2003-07-09 |
AU7015596A (en) | 1997-03-27 |
WO1997009608A1 (en) | 1997-03-13 |
DE69629037D1 (de) | 2003-08-14 |
GB9518429D0 (en) | 1995-11-08 |
US5955729A (en) | 1999-09-21 |
JP3930563B2 (ja) | 2007-06-13 |
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