JPH1145846A - 走査型露光方法及び装置 - Google Patents

走査型露光方法及び装置

Info

Publication number
JPH1145846A
JPH1145846A JP9199890A JP19989097A JPH1145846A JP H1145846 A JPH1145846 A JP H1145846A JP 9199890 A JP9199890 A JP 9199890A JP 19989097 A JP19989097 A JP 19989097A JP H1145846 A JPH1145846 A JP H1145846A
Authority
JP
Japan
Prior art keywords
reticle
mask
optical system
projection optical
shape
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9199890A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1145846A5 (enrdf_load_html_response
Inventor
Tetsuo Taniguchi
哲夫 谷口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to JP9199890A priority Critical patent/JPH1145846A/ja
Publication of JPH1145846A publication Critical patent/JPH1145846A/ja
Priority to US10/247,619 priority patent/US6549271B2/en
Publication of JPH1145846A5 publication Critical patent/JPH1145846A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP9199890A 1997-01-28 1997-07-25 走査型露光方法及び装置 Pending JPH1145846A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP9199890A JPH1145846A (ja) 1997-07-25 1997-07-25 走査型露光方法及び装置
US10/247,619 US6549271B2 (en) 1997-01-28 2002-09-20 Exposure apparatus and method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9199890A JPH1145846A (ja) 1997-07-25 1997-07-25 走査型露光方法及び装置

Publications (2)

Publication Number Publication Date
JPH1145846A true JPH1145846A (ja) 1999-02-16
JPH1145846A5 JPH1145846A5 (enrdf_load_html_response) 2005-05-26

Family

ID=16415316

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9199890A Pending JPH1145846A (ja) 1997-01-28 1997-07-25 走査型露光方法及び装置

Country Status (1)

Country Link
JP (1) JPH1145846A (enrdf_load_html_response)

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002043123A1 (fr) * 2000-11-22 2002-05-30 Nikon Corporation Dispositif et procede d'alignement et procede de fabrication de dispositif
WO2003077030A3 (en) * 2002-03-08 2004-06-17 Canon Kk Detection of position and estimation of surface shape
WO2004066371A1 (ja) * 2003-01-23 2004-08-05 Nikon Corporation 露光装置
JP2005274953A (ja) * 2004-03-24 2005-10-06 Toshiba Corp 描画パターンデータの生成方法及びマスクの描画方法
JP2006287103A (ja) * 2005-04-04 2006-10-19 Canon Inc 露光装置及び方法、並びに、デバイス製造方法
JP2006339438A (ja) * 2005-06-02 2006-12-14 Canon Inc 露光方法及び装置
WO2007094407A1 (ja) 2006-02-16 2007-08-23 Nikon Corporation 露光装置、露光方法及びデバイス製造方法
JP2007281117A (ja) * 2006-04-05 2007-10-25 Nikon Corp 露光方法、デバイス製造処理方法、デバイス製造処理システム及び測定検査装置
JP2008199034A (ja) * 1999-03-08 2008-08-28 Asml Netherlands Bv リソグラフィ投影装置のオフアクシスレベリング
JP2009031169A (ja) * 2007-07-28 2009-02-12 Nikon Corp 位置検出装置、露光装置、及びデバイスの製造方法
JP2009043865A (ja) * 2007-08-08 2009-02-26 Nec Electronics Corp 露光装置、露光方法および半導体装置の製造方法
US7626680B2 (en) 2003-09-09 2009-12-01 Canon Kabushiki Kaisha Exposure apparatus and device fabrication method using the same
JP2010123694A (ja) * 2008-11-18 2010-06-03 Canon Inc 走査露光装置およびデバイス製造方法
JP2010187002A (ja) * 2009-02-12 2010-08-26 Carl Zeiss Smt Ag 投影露光方法、投影露光システム、及び投影対物系
US7965387B2 (en) 2004-07-23 2011-06-21 Nikon Corporation Image plane measurement method, exposure method, device manufacturing method, and exposure apparatus
JP2011199244A (ja) * 2009-08-10 2011-10-06 Nikon Corp 露光方法、サーバ装置、露光装置及びデバイスの製造方法
JP2012084793A (ja) * 2010-10-14 2012-04-26 Nikon Corp 露光方法、サーバ装置、露光装置及びデバイスの製造方法
JP5278719B2 (ja) * 2005-01-24 2013-09-04 株式会社ニコン 計測方法及び露光方法
US8609301B2 (en) 2006-09-08 2013-12-17 Nikon Corporation Mask, exposure apparatus and device manufacturing method
JP2014116406A (ja) * 2012-12-07 2014-06-26 Nikon Corp 露光方法及び露光装置、並びにデバイス製造方法

Cited By (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008199034A (ja) * 1999-03-08 2008-08-28 Asml Netherlands Bv リソグラフィ投影装置のオフアクシスレベリング
WO2002043123A1 (fr) * 2000-11-22 2002-05-30 Nikon Corporation Dispositif et procede d'alignement et procede de fabrication de dispositif
WO2003077030A3 (en) * 2002-03-08 2004-06-17 Canon Kk Detection of position and estimation of surface shape
KR100708770B1 (ko) * 2002-03-08 2007-04-18 캐논 가부시끼가이샤 위치검출장치, 표면형상 추정장치, 그리고, 노광장치 및 이것을 이용한 디바이스의 제조방법
WO2004066371A1 (ja) * 2003-01-23 2004-08-05 Nikon Corporation 露光装置
US7626680B2 (en) 2003-09-09 2009-12-01 Canon Kabushiki Kaisha Exposure apparatus and device fabrication method using the same
JP2005274953A (ja) * 2004-03-24 2005-10-06 Toshiba Corp 描画パターンデータの生成方法及びマスクの描画方法
US7704645B2 (en) 2004-03-24 2010-04-27 Kabushiki Kaisha Toshiba Method of generating writing pattern data of mask and method of writing mask
US7965387B2 (en) 2004-07-23 2011-06-21 Nikon Corporation Image plane measurement method, exposure method, device manufacturing method, and exposure apparatus
JP5278719B2 (ja) * 2005-01-24 2013-09-04 株式会社ニコン 計測方法及び露光方法
JP2006287103A (ja) * 2005-04-04 2006-10-19 Canon Inc 露光装置及び方法、並びに、デバイス製造方法
JP2006339438A (ja) * 2005-06-02 2006-12-14 Canon Inc 露光方法及び装置
WO2007094407A1 (ja) 2006-02-16 2007-08-23 Nikon Corporation 露光装置、露光方法及びデバイス製造方法
US8027020B2 (en) 2006-02-16 2011-09-27 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
JP2007281117A (ja) * 2006-04-05 2007-10-25 Nikon Corp 露光方法、デバイス製造処理方法、デバイス製造処理システム及び測定検査装置
US9563116B2 (en) 2006-09-08 2017-02-07 Nikon Corporation Mask, exposure apparatus and device manufacturing method
US8609301B2 (en) 2006-09-08 2013-12-17 Nikon Corporation Mask, exposure apparatus and device manufacturing method
JP2009031169A (ja) * 2007-07-28 2009-02-12 Nikon Corp 位置検出装置、露光装置、及びデバイスの製造方法
JP2009043865A (ja) * 2007-08-08 2009-02-26 Nec Electronics Corp 露光装置、露光方法および半導体装置の製造方法
US8400611B2 (en) 2008-11-18 2013-03-19 Canon Kabushiki Kaisha Scanning exposure apparatus and device manufacturing method
JP2010123694A (ja) * 2008-11-18 2010-06-03 Canon Inc 走査露光装置およびデバイス製造方法
JP2010187002A (ja) * 2009-02-12 2010-08-26 Carl Zeiss Smt Ag 投影露光方法、投影露光システム、及び投影対物系
US8873022B2 (en) 2009-02-12 2014-10-28 Carl Zeiss Smt Gmbh Projection exposure method, system and objective
US9036129B2 (en) 2009-02-12 2015-05-19 Carl Zeiss Smt Gmbh Projection exposure method, system and objective
US9678440B2 (en) 2009-02-12 2017-06-13 Carl Zeiss Smt Gmbh Projection exposure method, system and objective
JP2011199244A (ja) * 2009-08-10 2011-10-06 Nikon Corp 露光方法、サーバ装置、露光装置及びデバイスの製造方法
JP2012084793A (ja) * 2010-10-14 2012-04-26 Nikon Corp 露光方法、サーバ装置、露光装置及びデバイスの製造方法
JP2014116406A (ja) * 2012-12-07 2014-06-26 Nikon Corp 露光方法及び露光装置、並びにデバイス製造方法

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