JPH11330228A - 分離トレンチを形成するための方法 - Google Patents

分離トレンチを形成するための方法

Info

Publication number
JPH11330228A
JPH11330228A JP11118718A JP11871899A JPH11330228A JP H11330228 A JPH11330228 A JP H11330228A JP 11118718 A JP11118718 A JP 11118718A JP 11871899 A JP11871899 A JP 11871899A JP H11330228 A JPH11330228 A JP H11330228A
Authority
JP
Japan
Prior art keywords
layer
trench
isolation
isolation trench
recesses
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP11118718A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11330228A5 (enExample
Inventor
Jim-Jun Xu
ジムジュン・チュー
Homayoon Haddad
ホマユーン・ハダッド
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HP Inc
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of JPH11330228A publication Critical patent/JPH11330228A/ja
Publication of JPH11330228A5 publication Critical patent/JPH11330228A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76229—Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
JP11118718A 1998-04-30 1999-04-26 分離トレンチを形成するための方法 Withdrawn JPH11330228A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/071,051 US6033961A (en) 1998-04-30 1998-04-30 Isolation trench fabrication process
US071,051 1998-04-30

Publications (2)

Publication Number Publication Date
JPH11330228A true JPH11330228A (ja) 1999-11-30
JPH11330228A5 JPH11330228A5 (enExample) 2006-04-13

Family

ID=22098939

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11118718A Withdrawn JPH11330228A (ja) 1998-04-30 1999-04-26 分離トレンチを形成するための方法

Country Status (5)

Country Link
US (1) US6033961A (enExample)
EP (1) EP0954023A1 (enExample)
JP (1) JPH11330228A (enExample)
KR (1) KR100613939B1 (enExample)
SG (1) SG74095A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7157385B2 (en) * 2003-09-05 2007-01-02 Micron Technology, Inc. Method of depositing a silicon dioxide-comprising layer in the fabrication of integrated circuitry
EP0929098A1 (en) * 1998-01-13 1999-07-14 STMicroelectronics S.r.l. Process for selectively implanting dopants into the bottom of a deep trench
US6528389B1 (en) * 1998-12-17 2003-03-04 Lsi Logic Corporation Substrate planarization with a chemical mechanical polishing stop layer
US6284560B1 (en) * 1998-12-18 2001-09-04 Eastman Kodak Company Method for producing co-planar surface structures
US6300219B1 (en) * 1999-08-30 2001-10-09 Micron Technology, Inc. Method of forming trench isolation regions
US6849518B2 (en) * 2002-05-07 2005-02-01 Intel Corporation Dual trench isolation using single critical lithographic patterning
US7125815B2 (en) * 2003-07-07 2006-10-24 Micron Technology, Inc. Methods of forming a phosphorous doped silicon dioxide comprising layer
US7053010B2 (en) * 2004-03-22 2006-05-30 Micron Technology, Inc. Methods of depositing silicon dioxide comprising layers in the fabrication of integrated circuitry, methods of forming trench isolation, and methods of forming arrays of memory cells
US7235459B2 (en) * 2004-08-31 2007-06-26 Micron Technology, Inc. Methods of forming trench isolation in the fabrication of integrated circuitry, methods of fabricating memory circuitry, integrated circuitry and memory integrated circuitry
US7217634B2 (en) * 2005-02-17 2007-05-15 Micron Technology, Inc. Methods of forming integrated circuitry
US7510966B2 (en) * 2005-03-07 2009-03-31 Micron Technology, Inc. Electrically conductive line, method of forming an electrically conductive line, and method of reducing titanium silicide agglomeration in fabrication of titanium silicide over polysilicon transistor gate lines
US8012847B2 (en) 2005-04-01 2011-09-06 Micron Technology, Inc. Methods of forming trench isolation in the fabrication of integrated circuitry and methods of fabricating integrated circuitry
US8105956B2 (en) 2009-10-20 2012-01-31 Micron Technology, Inc. Methods of forming silicon oxides and methods of forming interlevel dielectrics
CN104103571B (zh) * 2013-04-15 2017-06-09 中芯国际集成电路制造(上海)有限公司 浅沟槽隔离结构的形成方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5229316A (en) * 1992-04-16 1993-07-20 Micron Technology, Inc. Semiconductor processing method for forming substrate isolation trenches
US5665202A (en) * 1995-11-24 1997-09-09 Motorola, Inc. Multi-step planarization process using polishing at two different pad pressures
US5933748A (en) * 1996-01-22 1999-08-03 United Microelectronics Corp. Shallow trench isolation process
KR100213196B1 (ko) * 1996-03-15 1999-08-02 윤종용 트렌치 소자분리
US5926713A (en) * 1996-04-17 1999-07-20 Advanced Micro Devices, Inc. Method for achieving global planarization by forming minimum mesas in large field areas
US5712185A (en) * 1996-04-23 1998-01-27 United Microelectronics Method for forming shallow trench isolation
JPH1022374A (ja) * 1996-07-08 1998-01-23 Fujitsu Ltd 半導体装置の製造方法
US5721172A (en) * 1996-12-02 1998-02-24 Taiwan Semiconductor Manufacturing Company, Ltd. Self-aligned polish stop layer hard masking method for forming planarized aperture fill layers
US5923992A (en) * 1997-02-11 1999-07-13 Advanced Micro Devices, Inc. Integrated circuit formed with shallow isolation structures having nitride placed on the trench dielectric
US5817567A (en) * 1997-04-07 1998-10-06 Taiwan Semiconductor Manufacturing Company Ltd. Shallow trench isolation method
US5728621A (en) * 1997-04-28 1998-03-17 Chartered Semiconductor Manufacturing Pte Ltd Method for shallow trench isolation
US5930644A (en) * 1997-07-23 1999-07-27 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming a shallow trench isolation using oxide slope etching
US5945352A (en) * 1997-12-19 1999-08-31 Advanced Micro Devices Method for fabrication of shallow isolation trenches with sloped wall profiles

Also Published As

Publication number Publication date
US6033961A (en) 2000-03-07
KR100613939B1 (ko) 2006-08-18
SG74095A1 (en) 2001-05-22
EP0954023A1 (en) 1999-11-03
KR19990083587A (ko) 1999-11-25

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