JPH11284277A - Device and method for manufacturing laser diode - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a device and method for manufacturing a laser diode by which the spree factor is reduced by intensively arranging a series of devices from storage of laser diode bars to storage of laser diode chips, workability is improved by automating all operations and reliability of cleavage and productivity are improved. SOLUTION: The manufacturing device is comprised of a cleavage groove- forming unit 1 provided with a flat ring 6 for aligning and supporting multiple laser diode bars R in wafer form and a cleavage groove forming part 7 for forming cleavage grooves M on the laser diode bars at specified intervals, a cleaving unit 2 provided with a cleaving mechanism 8 for cutting the laser diode bars along the cleavage grooves into laser diode chips P, and a chip storing unit 3 provided with a chip transferring part 9 for taking out and transferring the laser diode chips and a tray 10 for storing the chips.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a laser diode manufacturing apparatus and method for cleaving a bar-shaped laser diode to obtain a laser diode chip.

[0002]

2. Description of the Related Art Laser diodes are used for DVDs and CD-Rs.
This is a device used for an optical pickup head of an OM driver. For example, 600 μm × 300 μm ×
It is formed in a size of 100 μm and has a wavelength of 650 nm.
Emits a red visible light laser.

This laser diode is made of a gallium arsenide material. As shown in FIG. 13, first, a circular wafer W having a predetermined diameter is formed.
6 to 0.8 mm, length b: 10 to 25 mm, thickness t: 0.1
mm laser diode bar R (hereinafter referred to as LD bar)
Processed into

The laser diode chip P having the above-described size can be obtained by subjecting the LD bar R to cleavage processing described later.

[0005] As a laser diode manufacturing apparatus for obtaining a laser diode chip P by cleaving the LD bar R,
This is a device in which the LD bar R is placed on a glass plate, and the LD bar R is cut by applying a cleavage cutter having a sharp tip to the LD bar R.

[0006] Since the gallium arsenide material constituting the LD bar is a brittle material, it is not necessary to insert a cutter over the entire upper and lower surfaces of the bar. Cleaving phenomenon peculiar to the material occurs and a chip can be obtained.

[0007]

Conventionally, a laser diode chip is processed by a laser diode manufacturing apparatus as shown in FIG.

That is, this laser diode manufacturing apparatus comprises a cleavage groove forming apparatus for forming cleavage grooves at predetermined intervals on one surface of a laser diode bar, and a cutting edge of a cutter along the cleavage grooves of the laser diode bar. A cleaving device that inserts and performs a cleaving process,
And a chip transfer device for accommodating the obtained laser diode chip.

Each component device has a size (unit: mm) as shown in FIG. 1 and is means for supporting a laser diode bar or a laser diode chip processed by an operator between the devices. It is designed to transport flat rings.

Therefore, the entire apparatus requires an extremely large occupied area, and it takes a long time to set a flat ring in each apparatus, so that workability is poor.
In addition, there is a risk that the operator may mistakenly set the flat ring due to mistakes, which causes a reduction in productivity and reliability.

The present invention has been made in view of the above circumstances, and an object thereof is to integrate a series of devices from housing a laser diode bar to housing a laser diode chip to reduce the occupied space. It is an object of the present invention to provide a laser diode manufacturing apparatus and a manufacturing method that reduce the number of times and automate all operations to improve workability, thereby improving the reliability and productivity of cleavage processing.

[0012]

According to a first aspect of the present invention, there is provided a laser diode manufacturing apparatus which cleaves a laser diode bar separated from a wafer at a predetermined interval. A cleavage groove forming unit having a function of providing a groove, a cleavage unit having a function of obtaining a laser diode chip by cutting a laser diode bar along the cleavage groove formed by the cleavage groove forming unit, and a cleavage unit And a chip storage unit having a function of taking out and storing the laser diode chip obtained by the method.

According to a second aspect of the present invention, in the apparatus for manufacturing a laser diode according to the first aspect, the cleavage groove forming unit includes a support means for aligning and supporting a plurality of laser diode bars and a laser diode bar housed in the support means. A cleavage groove forming means for providing a cleavage groove at a predetermined interval with respect to the cleavage groove unit, wherein the cleavage unit comprises: a supporting means for aligning and supporting the laser diode bar having the cleavage groove formed therein; and a laser diode along the cleavage groove. Cleaving means for cleaving the bar to form a laser diode chip, wherein the chip storage unit includes a chip transfer means for taking out and transferring the laser diode chip on the support means, and a storage means for housing the taken out chip. It is characterized by.

According to a third aspect, in the laser diode manufacturing apparatus according to the second aspect, the supporting means is a flat ring on which an adhesive sheet is laid and which adhesively supports the laser diode bar.

According to a fourth aspect of the present invention, in the laser diode manufacturing apparatus according to the second aspect, the laser diode bar has one surface formed with an Au film and the other surface formed with Au-Sn.
The Au-Sn film-forming surface is supported by the support means with the Au-Sn film-forming surface as a ground surface. The cleavage groove forming unit recognizes the Au-Sn film-forming surface of the laser diode bar and performs the cleavage. A first recognition means for setting a cleavage groove forming position with respect to the groove forming means is provided.

According to a fifth aspect of the present invention, in the laser diode manufacturing apparatus according to the second aspect, the cleavage unit recognizes the cleavage groove formed in the laser diode bar and sets a cleavage processing position for the cleavage means. 2 is provided.

According to a sixth aspect of the present invention, in the laser diode manufacturing apparatus according to the second aspect, the chip storage unit recognizes the laser diode chip on the support means,
Third to set the chip position with respect to the chip transport means
Is provided.

According to a seventh aspect of the present invention, there is provided an apparatus for manufacturing a laser diode, wherein one surface is an Au film forming surface and the other surface is an Au-Sn film forming surface. Means for supporting the laser diode bar with the Au-Sn film forming surface as a ground plane, first recognition means for recognizing the Au-Sn film forming surface of the laser diode bar supported by the supporting means, and A cleavage groove forming means for providing cleavage grooves at predetermined intervals on the Au film forming surface of the laser diode bar based on a signal of the recognition means of (1), and a cleavage groove formed by the cleavage groove forming means for recognizing the cleavage groove. A laser diode chip which is cleaved along a cleavage groove of a laser diode bar based on a signal from the second recognition means to obtain a laser diode chip; And third recognizing means for recognizing a Dochippu, characterized by comprising a chip conveying means for accommodating the tray is taken out of the laser diode chip from the support means on the basis of the signal of the third recognition unit.

In order to satisfy the above object, a method of manufacturing a laser diode according to a third aspect of the present invention is characterized in that, as claim 8, one surface is an Au film forming surface and the other surface is an Au—Sn film forming surface. The wafer-shaped laser diode bar is Au
A supporting means for supporting the Sn film forming surface as a ground plane, and an Au- of a laser diode bar supported by the supporting means;
First recognition means for recognizing a cleavage line on the Sn film forming surface;
A first position adjusting means for moving and setting the position of the supporting means based on a signal from the first recognizing means; and a laser diode bar on the supporting means adjusted in position by the first position adjusting means. On the other hand, a cleavage groove forming means for providing cleavage grooves at predetermined intervals on the Au film formation surface, a transportation means for transporting the support means for supporting the laser diode bar having the cleavage grooves to a predetermined position, Second recognition means for recognizing the cleavage of the laser diode bar on the support means at a predetermined position, and second position adjustment for moving the support means and adjusting the position based on a signal from the second recognition means. Means for cleaving along the cleavage groove of the laser diode bar on the support means, the cleaved groove being obtained by the second position adjustment means to obtain a laser diode chip. Step, transport means for transporting the support means supporting the laser diode chip to a predetermined position, third recognition means for recognizing the laser diode chip on the support means at a predetermined position, and third recognition means And a chip conveying means for taking out the laser diode chip from the supporting means based on the signal and storing the chip in a tray.

According to a fourth aspect of the present invention, there is provided a method for manufacturing a laser diode, comprising the steps of: forming a cleavage groove at a predetermined interval in a laser diode bar divided from a wafer; And a step of cleaving along the cleaved groove of the formed laser diode bar, and a step of taking out and storing the cleaved laser diode chip.

According to a fifth aspect of the present invention, there is provided a method for manufacturing a laser diode, wherein
a step of recognizing the Au-Sn film forming surface of the laser diode bar housed with the u film forming surface as a ground plane, and based on the recognition result, the Au-Sn of the laser diode bar.
providing a cleavage groove on the n-film formation surface, and recognizing the cleavage groove formed on the laser diode bar;
A step of cleaving along a cleavage groove of the laser diode bar based on the recognition result to obtain a laser diode chip, and a step of recognizing the laser diode chip;
Taking out the laser diode chip based on the recognition result and storing it in a tray.

According to the first to the eleventh aspects of the present invention, a series of devices from the storage of the laser diode bar to the storage of the laser diode chip are integrated by employing the means for solving the above problems. As a result, the occupied space is reduced, and all operations are automated, thereby improving workability and reliability of the cleavage processing.

[0023]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment according to the first to sixth inventions will be described below with reference to the drawings.

FIG. 1 shows a laser diode manufacturing apparatus.

This device uses a laser diode (hereinafter referred to as L
C) A cleavage groove forming unit 1 for providing cleavage grooves at predetermined intervals in a bar, and a cleavage groove forming unit 1
A cleavage unit 2 for cleaving (cutting) the LD bar along the cleavage groove formed by the above to obtain a laser diode chip (hereinafter referred to as an LD chip), and taking out and storing the LD chip obtained by the cleavage unit 2. The chip storage unit 3 and the electrical unit 4 including an operation panel and a monitor provided with a power switch and the like are integrally formed. (Note that the LD bar, cleavage groove and LD
The cleavage groove forming unit 1 is provided with a predetermined interval with respect to the flat ring 6 which is a support means for aligning and supporting a plurality of LD bars and the LD bars accommodated in the flat ring 6. Cleaved groove forming section 7 which is a cleaved groove forming means for providing a cleaved groove
It has.

The cleavage unit 2 includes a flat ring 6 for aligning and supporting the LD bar having the cleavage groove formed therein, and a cleavage mechanism 8 as a cleavage means for cutting the LD bar along the cleavage groove to form an LD chip. It has.

The chip storage unit 3 includes a chip transfer section 9 as chip transfer means for picking up LD chips on the flat ring 6 and a tray 10 as chip storage means for storing the picked-up LD chips.

The flat rings 6 in each of the units 1 to 3 are all the same, and are sequentially conveyed by a flat ring conveying unit 11 which is a flat ring conveying means provided between the units. ing.

The cleavage groove forming unit 1 has the first
The cleavage unit 2 is provided with a cleavage groove recognition unit 13 serving as a second recognition unit, and the chip storage unit 3 is provided with an LD chip serving as a third recognition unit. A recognition unit 14 is provided.

The details of each unit will be described below with reference to another drawing.

FIGS. 3 and 4 show details of the cleavage groove forming unit 1.

The flat ring 6 is supported by a flat ring holder 15 and fixedly held by a ring holder 17 divided into two along the peripheral edge of the upper surface. The flat ring 6 is formed of a transparent pressure-sensitive adhesive sheet except for a peripheral end portion, and a plurality of LD bars R are placed on the flat ring 6 in a vertically and horizontally aligned state.

Such a flat ring 6 is supported by a flat ring transfer shaft portion 18 composed of an X axis 18a and a Y axis 18b serving as first position adjusting means, and the entire flat ring is moved in the X and Y directions. Position adjustment.

A flat ring holding device 19 is arranged below the flat ring 6, while a scriber 21 supported by a scriber driving device 20 forming the Z axis is arranged above the flat ring 6. Thus, a cleavage groove is formed in the LD bar R as described later.

The LD bar recognition section 12 disposed below the flat ring has its lens surface directed to the LD bar R via the flat ring 6, and enlarges the LD bar R at a high magnification to capture an image. The microscope 22 for recognition, the image processing unit 23 for processing the image of the LD bar R captured by the microscope 22 as an image, and the microscope 22 are communicated via the optical fiber 24 to capture the image of the LD bar R. The lighting device 25 is used.

As shown in FIG. 15, the surface of the LD bar R has an Au film deposition surface (hereinafter referred to as an Au surface).
And the back surface is an Au-Sn film deposition surface (hereinafter referred to as Au).
-Sn plane).

On the Au-Sn surface, a plurality of cleavage lines H (formed of Ga-As (gallium arsenide) exposed by etching the Au-Sn surface) are drawn at predetermined intervals. The cleavage line H is 0.3 mm in the longitudinal direction of the LD bar R.
It is drawn at a pitch of 0.1 mm and a width of 0.1 mm, and the width between cleavage lines H is 0.2 mm.

Since the LD bar R is supported by the flat ring 6 as a base surface (ground surface), the microscope 22 recognizes the Au-Sn surface of the LD bar R. That is, the recognition microscope 22 recognizes the cleavage line H drawn on the Au-Sn surface from below.

FIG. 5 shows the details of the cleavage forming unit 2.

Since the flat ring 6 is exactly the same as that described above, the same numbers are given here and a new description is omitted.

The flat ring 6 is supported by a flat ring transfer shaft portion 26 composed of an X axis 26a and a Y axis 26b serving as second position adjusting means, and moves the flat ring 6 in the X and Y directions. The position is adjusted.

The cleavage mechanism 8 is disposed below the flat ring 6, and is supported by a cutter driving mechanism 27 forming the Z-axis. Are arranged facing each other. As described later, the cutter K is pressed against a portion of the LD bar R which faces the cleavage groove, so that
The D bar R is cut (cleaved).

The cleavage groove recognizing portion 13 disposed above the flat ring 6 has its lens surface directed toward the LD bar R on the flat ring, and enlarges the LD bar R at a high magnification to capture an image. The microscope 28 for recognition, an image processing unit 29 for processing the image of the LD bar R captured by the microscope 28 as an image, and the microscope 28 are communicated via the optical fiber 30 to capture the image of the LD bar R. The lighting device 31 is used.

FIG. 6 shows the details of the chip storage unit 3.

Since the flat ring 6 is exactly the same as that described above, the same numbers are given here and a new description is omitted.

Above the flat ring 6, suction nozzles 32 constituting the chip transfer section 9 are arranged to face each other. The suction nozzle 32 is connected to a vacuum source via a hose (not shown), and the opening end that actually performs the suction action faces the FL chip P on the flat ring 6.

The suction nozzle 32 is supported by a nozzle vertical shaft portion 33 and can move in the Z direction. The suction nozzle 32 is supported by an LD chip transfer shaft portion 35 via a holder 34 and has a Y axis.
Movement in the direction is possible.

In the vicinity of one end of the LD chip transfer shaft 35, an LD chip storage stage 36 is disposed, which is constituted by a tray stocker 37 having a plurality of trays 10 and a tray stocker driving mechanism 38. Be supported by.

The tray stocker driving mechanism 38 is capable of rotating the tray stocker 37 in the circumferential direction (Q direction). Accordingly, the suction tip together with the nozzle vertical shaft 33 and the LD chip transfer shaft 35 are provided. The position of the LD chip P adsorbed on the tray 32 is adjusted on the tray 10 and then stored.

As shown in FIG. 9, an LD chip push-up holder 40 is disposed below the flat ring 6 and faces the suction nozzle 32 via the LD chip P. The push-up holder 40 is formed of a cylindrical body having an open upper end surface, and has a push-up pin 41 that moves vertically in the interior.

As shown in FIG. 6 again, the flat ring 6
The LD chip recognition unit 14 disposed above the
The lens surface is directed to the LD chip P on the flat ring 6, and the LD chip P is magnified at a high magnification to capture an image. The recognition microscope 42 captures an image of the LD chip R captured by the microscope 42 as an image. The image processing unit 43 for processing and the microscope 42 are connected to each other via an optical fiber 44, and are constituted by an illumination device 45 used when capturing an image of the LD bar R.

FIG. 7 shows the details of the flat ring transport section 11.

That is, a flat ring transfer shaft portion 46 which is an X axis is provided, and a plurality of flat ring upper and lower shaft portions 47 are provided at a predetermined interval on the transfer shaft portion 46.
To be moved simultaneously and in the same direction.

The flat ring upper and lower shaft portions 47 are independently movable in the vertical direction. Flat ring clampers 48 are provided at the ends of the upper and lower shaft portions 47, respectively, and while the flat ring 6 is clamped, each cleavage groove forming portion 7, the cleavage mechanism portion 8,
It can move across the LD chip transport section 10 and can be released as needed.

Next, the operation of the laser diode manufacturing apparatus thus configured will be described.

First, as schematically shown in FIG. 10, as shown in FIG. 10A, a cleavage groove M, which is a cleavage groove, is formed in the LD bar R on the flat ring 6 in the cleavage groove forming unit 1. Next, as shown in FIG. 2B, the laser diode chip P is cut by cleaving along the cleavage groove M of the LD bar R formed in the cleavage groove forming unit 1 in the cleavage unit 2.
Get. Finally, as shown in FIG. 4C, the LD chip P formed in the cleavage unit 2 is taken out from the chip storage unit 3, transported, and
Automatically perform a series of work to store on top.

This will be described in more detail.

A plurality of LDs are previously placed on the flat ring 6.
The bars R are placed in a state where they are aligned vertically, horizontally and horizontally, and the flat ring 6 is set in the cleavage groove forming portion 7.
LD bar R on flat ring 6 set here
The LD bar recognition unit 12 recognizes the cleavage line H formed with a predetermined width on the Au-Sn surface, and based on the signal, the flat ring transfer shaft 18 acts to position the scriber 21 with respect to the scriber 21. Adjusted.

Next, the scriber 21 makes the LD
A cleavage groove M which is a cleavage groove within a range opposed to a region where the cleavage line H on the Au-Sn surface of the Au surface of the bar R is formed.
Is formed. The processing of the cleavage groove M is performed while the LD bar R is placed on the flat ring 6. That is, since the LD bar supporting portion of the flat ring 6 is formed of the pressure-sensitive adhesive sheet, the impact applied to the LD bar R is absorbed to reduce the bending stress, so that abnormal processing of the LD bar does not occur.

In this way, the target LD bar R is repeatedly recognized a plurality of times, and the position of the LD bar R is adjusted to form a plurality of cleavage grooves M. A plurality of cleavage grooves M are formed on the processed LD bar R at exactly predetermined intervals.

When the formation processing of the cleavage grooves M for all the LD bars R on the flat ring 6 is completed, the flat ring transfer section 11 operates to transfer the flat ring 6 to the cleavage mechanism section 8 of the cleavage unit 2.

The set LD bar R on the flat ring 6 is placed on the cleavage groove recognition section 1 of the unit 2.
3 and the flat ring transfer shaft 26 acts on the basis of the signal to adjust the position with respect to the cutter K.

Next, as shown in FIG. 8, the LD bar is cut (cleaved) by the cutter K while the LD bar R is placed on the flat ring 6. That is, L
The cleavage groove recognizing microscope 28 recognizes the cleavage groove M formed on the LD bar R from above the D-bar R, and each time the transfer shaft 26 moves and adjusts the flat ring 6 in the XY directions.

Then, with the position of the flat ring 6 determined, the cutter driving mechanism 27 operates to drive the cutter K up. The cutting edge of the cutter K abuts on the position facing the cleavage groove M via the flat ring 6, and cuts the LD bar R by the cleavage phenomenon peculiar to the brittle material to obtain the LD chip P.

As described above, after the plurality of cleavage grooves M are formed in one LD bar R, the recognition of the cleavage grooves M and the operation of the cutter K are repeated a plurality of times. When all the cleavage grooves M are repeatedly recognized a plurality of times, the position of the LD bar R is adjusted to form a plurality of LD chips P.

When the processing of forming the LD chips P on all the LD bars R on the flat ring 6 is completed, the flat ring transfer section 11 operates to transfer the flat ring 6 to the storage unit 3 as it is.

In the storage unit 3, all the LD chips P on the flat ring 6 are taken out and stored on the tray 10 by the operation of the chip transfer section 9.

That is, L from above the flat ring 6
The D chip recognition unit 14 recognizes the LD chip P, and lowers the suction nozzle 32 each time. This suction nozzle 32
The vacuum source communicating with the LD operates to apply a negative pressure, and the opposite LD
The chip P is sucked.

Next, the suction nozzle 32 is once raised by operating the nozzle vertical shaft portion 33, and the LD chip transfer shaft portion 35 is further operated to move the suction nozzle 32 onto the tray stocker 37. The LD chips P sucked by the suction nozzle 32 by the position of the suction nozzle 32 and the operation of the tray stocker driving mechanism 38 are stored in a state where they are arranged neatly on the empty tray 10.

FIG. 11 shows a flowchart in the LD chip transport section 9.

In the following, the process starts at step T1, and at step T2, the LD chip recognizing section 14 recognizes the LD chip P and determines whether or not the chip P is present. If the LD chip P is not recognized (NO), the recognition of the LD chip P is continued in step T3.

When it is recognized that the LD chip P is present (Y
ES) drives the LD chip transfer shaft 35 to move the suction nozzle 32 in the Y direction in step T4. Then
In step T5, the nozzle vertical shaft 33 is driven to lower the suction nozzle 32. That is, the suction nozzle 32
Is brought into contact with the LD chip P on the flat ring 6.

Then, in step T6, the suction nozzle 32 sucks the LD chip P. In step T7, the vertical shaft portion 33 is driven to raise the suction nozzle 32.
In step 8, the LD chip transfer shaft 35 is driven to move the suction nozzle 32 that has sucked the LD chip P to the tray 10 side.

In step T9, the vertical shaft 33 is lowered again, and the suction nozzle 32 is lowered. Then, in step T10, the LD chip P sucked onto the tray 10 is released, and in step T11, the vertical shaft portion 33 is driven to raise the suction nozzle 32, and in step T12
To the end.

As described above, since a large number of LD chips P are supported on the flat ring 6, the above flow is repeated a plurality of times.

FIG. 12 is a flowchart of a flat ring transfer process by the flat ring transfer unit 11.
This will be described in detail below.

After starting in step S1,
In step S2, it is determined whether the cleaving groove is formed in the flat ring 6 and the cleaving operation is completed. If each operation is not completed (NO), the process proceeds to step S3, where the cleavage groove forming operation and the cleavage operation are continued, and the operation described above is repeated.

If each operation has been completed (YES), in step S4, the cleavage groove forming section 7 and the cleavage mechanism section 8
The flat ring 6 in the flat ring holder 15
The action of the flat ring presser 17 which presses and fixes the flat ring is released.

Next, after lowering the flat ring vertical shaft portion 47 in step S5, the flat ring transfer shaft portion 18, in each portion 7, 8 in step S6.
The flat ring 6 is moved to the clamp position by operating the 26 Y-axes 18b and 26b.

In step S7, each clamper 48 operates to clamp the flat ring 6. Step S8
Then, the flat ring 6 is moved up together with the clamper 48 by driving the flat ring vertical shaft portion 47.

Next, in step S9, the flat ring transfer shaft 46 is driven to transfer the flat ring 6 in the X-axis direction, and stops at the end of the shaft. Step S
At 10, the flat ring vertical shaft portion 47 is driven to lower the clamper 48.

In step S11, the clamp of the clamper 48 with respect to the flat ring 6 is released.
At 12, the Y-axes 18b and 26b of the flat ring transfer shaft portions 18 and 26 in the respective portions 7 and 8 are moved to move the flat ring 6 to the release position.

Then, in step S13, the flat ring vertical shaft portion 47 is raised, and in step S14, the flat ring transfer shaft portions 18, 26 move and stop at the standby position, and the end of step S15 is reached.

[0084]

As described above, according to the laser diode manufacturing apparatus and the manufacturing method of the first and sixth aspects of the present invention, it is possible to form a cleavage groove for an LD bar,
Cleavage processing, and flat ring transport and LD
All processes such as chip storage are automated to eliminate variations in products due to manual work, thereby achieving high accuracy, minimizing index time, and improving reliability and productivity.

[Brief description of the drawings]

FIG. 1 is a front view of the appearance of a laser diode manufacturing apparatus according to an embodiment of the present invention.

FIG. 2 is a plan view of the laser diode manufacturing apparatus of the embodiment.

FIG. 3 is a perspective view of a cleavage groove forming portion of the embodiment.

FIG. 4 is a front view of a cleavage groove forming portion of the embodiment.

FIG. 5 is a perspective view of a cleavage mechanism according to the embodiment.

FIG. 6 is a perspective view of an LD chip transport unit of the embodiment.

FIG. 7 is a perspective view of the flat ring transport unit of the embodiment.

FIG. 8 is an operation explanatory view of the cleavage mechanism in the embodiment.

FIG. 9 is an explanatory diagram of an operation in the LD chip transport unit of the embodiment.

FIG. 10 is a diagram for sequentially explaining a laser diode manufacturing process of the embodiment.

FIG. 11 is a flowchart of an LD chip transport unit according to the embodiment.

FIG. 12 is a flowchart of the flat ring transport unit in the embodiment.

FIG. 13 is a view sequentially showing a process of obtaining a laser diode chip from a round wafer via a laser diode bar.

FIG. 14 is a partial front view of a conventional laser diode manufacturing apparatus.

FIG. 15 is a diagram of a laser diode bar.

[Explanation of symbols]

R: laser diode bar (LD bar), M: cleavage groove, 1: cleavage groove forming unit, P: laser diode chip (LD chip), 2: cleavage unit, 3: chip storage unit, 6: flat ring (supporting means) 7) Cleavage groove forming part (cleavage groove forming means), 8 ... cleavage mechanism part (cleaving means), 11 ... chip conveying part (chip conveying means), 10 ... tray (chip storing means), 11 ... flat ring conveyance Unit (flat ring conveying unit), 12: laser diode bar recognition unit (first recognition unit), 13: cleavage groove recognition unit (second recognition unit), 14: laser diode chip recognition unit (third recognition unit) ), 18: Flat ring transfer shaft (first position adjusting means), 26: Flat ring transfer shaft (second position adjusting means), 35: LD chip Transfer Nojiku portion (third position adjusting means).

Claims (10)

[Claims] 1. A cleavage groove forming unit having a function of providing cleavage grooves at predetermined intervals in a laser diode bar divided from a wafer, and a laser diode along a cleavage groove formed by the cleavage groove forming unit. A laser, comprising: a cleavage unit having a function of obtaining a laser diode chip by cutting a bar; and a chip storage unit having a function of taking out and storing a laser diode chip obtained by the cleavage unit. Diode manufacturing equipment. 2. A cleaving groove forming unit, comprising: a supporting means for aligning and supporting a plurality of laser diode bars; and a cleaving groove for forming a cleavage groove at a predetermined interval with respect to a laser diode bar accommodated in the supporting means. The cleavage unit comprises a cleavage means, wherein the cleavage unit is provided with support means for aligning and supporting the laser diode bar having the cleavage groove formed therein, and cleavage means for cleaving the laser diode bar along the cleavage groove to form a laser diode chip. 2. The laser diode manufacturing apparatus according to claim 1, wherein said chip storage unit includes a chip transfer means for picking up and transferring the laser diode chip on the support means, and a storage means for holding the picked-up chip. . 3. The laser diode manufacturing apparatus according to claim 2, wherein said support means is a flat ring on which an adhesive sheet is laid and which adhesively supports a laser diode bar. 4. The laser diode bar has one surface formed with an Au film forming surface and the other surface formed with an Au-Sn film forming surface, and the Au-Sn film forming surface is supported by the supporting means as a ground plane. The cleavage groove forming unit includes first recognition means for recognizing the Au-Sn film formation surface of the laser diode bar and setting a cleavage groove formation position with respect to the cleavage groove formation means. An apparatus for manufacturing a laser diode according to claim 2. 5. The cleaving unit according to claim 1, further comprising a second recognizing means for recognizing the cleaved groove formed in the laser diode bar and setting a cleaving position with respect to the cleaving means. 3. The apparatus for manufacturing a laser diode according to 2. 6. The apparatus according to claim 2, wherein said chip storage unit includes third recognition means for recognizing a laser diode chip on a support means and setting a chip position with respect to said chip transport means. Laser diode manufacturing equipment. 7. One surface is an Au film forming surface, and the other surface is an A film forming surface.
support means for supporting the laser diode bar formed on the u-Sn film formation surface as the Au-Sn film formation surface as a ground plane; and Au for the laser diode bar supported by the support means.
First recognition means for recognizing the Sn film formation surface; cleavage groove formation means for providing cleavage grooves at predetermined intervals on the Au film formation surface of the laser diode bar based on a signal from the first recognition means; Second recognition means for recognizing the cleavage formed by the cleavage formation means, and cleaving along the cleavage groove of the laser diode bar based on a signal from the second recognition means to obtain a laser diode chip. Cleaving means; third recognition means for recognizing the laser diode chip; and chip transport means for taking out the laser diode chip from the support means and storing it in a tray based on a signal from the third recognition means. An apparatus for manufacturing a laser diode, comprising: 8. One surface is an Au film forming surface, and the other surface is an A film forming surface.
support means for supporting a wafer-shaped laser diode bar formed on the u-Sn film formation surface as a ground surface with the Au-Sn film formation surface; and Au for the laser diode bar supported by the support means.
First recognition means for recognizing the cleavage line of the Sn film formation surface; first position adjustment means for moving the support means based on a signal from the first recognition means to set a position; A cleavage groove forming means for providing a cleavage groove at a predetermined interval on the Au film forming surface with respect to the laser diode bar on the supporting means, the position of which is adjusted by the position adjusting means; Conveying means for conveying the supporting means for supporting the diode bar to a predetermined position; second recognizing means for recognizing a cleavage groove of the laser diode bar on the supporting means at the predetermined position; and a signal from the second recognizing means. A second position adjusting means for moving the supporting means and adjusting the position thereof; and a laser diode bar on the supporting means, the position of which is adjusted by the second position adjusting means. Cleaving means for cleaving along the groove to obtain a laser diode chip; conveying means for conveying the supporting means for supporting the laser diode chip to a predetermined position; and recognizing the laser diode chip on the supporting means at a predetermined position. An apparatus for manufacturing a laser diode, comprising: third recognition means; and chip transport means for taking out a laser diode chip from the support means based on a signal from the third recognition means and accommodating the chip in a tray. . 9. A step of providing a cleavage groove at predetermined intervals in a laser diode bar divided from a wafer; a step of cleaving along a cleavage groove of the formed laser diode bar; Removing the chip and storing it therein. A method for manufacturing a laser diode, comprising: 10. A step of recognizing an Au-Sn film forming surface of a laser diode bar housed with an Au film forming surface as a grounding surface, and based on the recognition result, the Au-Sn film forming surface of the laser diode bar. A step of providing a cleavage groove; a step of recognizing the cleavage groove formed in the laser diode bar; a step of cleaving along the cleavage groove of the laser diode bar based on the recognition result to obtain a laser diode chip; A method for manufacturing a laser diode, comprising: a step of recognizing a laser diode chip; and a step of taking out the laser diode chip based on the recognition result and storing the chip in a tray.