JP4110219B2 - Laser dicing equipment - Google Patents

Description

  The present invention relates to a dicing apparatus and a dicing method for manufacturing a chip such as a semiconductor device or an electronic component, and more particularly to a dicing apparatus and a dicing method using laser light.

  Conventionally, in order to divide a wafer having a semiconductor device or electronic component formed on its surface into individual chips, a dicing apparatus called a dicing blade that cuts the wafer by inserting a grinding groove into the wafer has been used. The dicing blade is obtained by electrodepositing fine diamond abrasive grains with Ni, and an extremely thin one having a thickness of about 30 μm is used.

  The dicing blade was rotated at a high speed of 30,000 to 60,000 rpm and cut into the wafer, and the wafer was completely cut (full cut) or incompletely cut (half cut or semi-full cut). Half-cut is a method of cutting about half the thickness of the wafer, and semi-full cut is a case where a grinding groove is formed leaving a thickness of about 10 μm.

  In order to efficiently perform dicing with this dicing blade, when the grinding groove machining direction is the X direction, the two spindles with the dicing blade attached to the tip face each other on the same straight line in the Y direction perpendicular to the X direction. A dicing apparatus has been proposed in which two lines can be simultaneously processed with the same processing stroke as when a single spindle is used (see, for example, Patent Document 1).

  Further, in the dicing apparatus described in Patent Document 1, one of the two spindles can be moved in the X direction with respect to the other spindle, and the two dicing blades are arranged on the same straight line in the X direction. It is configured to be able to.

In the case of grinding with this dicing blade, since the wafer is a highly brittle material, it becomes brittle mode processing, chipping occurs on the front and back surfaces of the wafer, and this chipping is a factor that degrades the performance of the divided chips. It was. As a means to solve this chipping problem in the dicing process, instead of cutting with a conventional dicing blade, a laser beam having a focused point is incident on the inside of the wafer, and a modified region by multiphoton absorption is formed inside the wafer. Techniques relating to laser processing methods of forming and dividing into individual chips have been proposed (see, for example, Patent Documents 2 to 7).
Japanese Patent Laid-Open No. 10-064853 JP 2002-192367 A JP 2002-192368 A JP 2002-192369 A JP 2002-192370 A JP 2002-192371 A JP 2002-205180 A

  However, in the case of the dicing apparatus described in Patent Document 1, when two spindles are arranged opposite to each other on the same straight line in the Y direction, even if the two spindles approach the maximum, Since the holding mechanism and cover of the dicing blade interfere with each other, two lines cannot be processed at the same time in the center of the wafer, and the remaining processing must be processed with a single dicing blade. The processing efficiency has been reduced.

  In addition, if the remaining part of the machining is moved to a position where the two spindles move relative to each other in the X direction so as not to interfere with each other, and the two lines are to be machined simultaneously, the machining stroke increases. It was not right.

  Further, the techniques proposed in the above Patent Documents 2 to 7 are based on the cleaving technique using a laser beam, and the chipping problem is solved. However, there is only one processing head, and each line has one. However, there was a problem that the processing efficiency was poor because it could only be processed.

  The present invention has been made in view of such circumstances, and can simultaneously process two lines efficiently, or can perform two processes efficiently on one line, and can perform chipping. An object of the present invention is to provide a dicing apparatus and a dicing method that do not occur.

In order to achieve the above object, the present invention provides a dicing apparatus for dividing a wafer into individual chips, wherein a laser beam is incident from the surface of the wafer to form a modified region inside the wafer. The converging point of the laser beam that is provided facing the common Y guide base and is irradiated toward the same surface of the wafer can be arranged on the same straight line in the X direction that is the processing direction. , Two laser heads each having a laser beam irradiation tip portion provided in parallel to the Y direction and independently moving only in the Y direction and the Z direction; and the two laser heads mounted with the wafer A chuck table that moves in the X direction, which is a processing direction relative to the wafer surface, and the two laser heads have an arbitrary angle with respect to the wafer surface. It is possible to irradiate the laser beam with an inclination to each other, move independently in the Y direction perpendicular to the X direction, and move in the Z direction perpendicular to the X direction and Y direction, respectively. It is characterized by being configured to be independently movable.

The laser dicing apparatus according to the present invention has two laser heads, and the two laser heads are provided to face a common Y guide base and can move independently in the Y direction. A plurality of lines can be processed at the same time with respect to the wafer, and the processing efficiency is high. The two laser heads can move independently in the Y direction, and the condensing points of the laser beams irradiated from the respective laser heads on the same surface of the wafer can be arranged on the same straight line in the X direction. In addition, since the tip portions for irradiating laser light are respectively provided in parallel to the Y direction , the laser heads do not interfere with each other, and a plurality of lines can be simultaneously processed even in the central portion of the wafer. it can. Furthermore, since the two laser heads can move independently in the Z direction, the Z direction positions of the condensing points of the laser light emitted from the respective laser heads can be set to different positions. Therefore, a plurality of modified region layers can be formed inside the wafer within one processing stroke, and even a thick wafer can be easily cleaved.

  As described above, the laser dicing apparatus of the present invention has a plurality of laser heads, and the plurality of laser heads can move independently in the Y direction orthogonal to the processing direction, so that the wafer having various processing pitches can be used. On the other hand, a plurality of lines can be processed simultaneously, and the processing efficiency is high.

  In addition, since the plurality of laser heads can move independently in the Y direction, and the condensing points of the laser light emitted from the respective laser heads can be arranged on the same straight line in the X direction as the processing direction, Even if the distance between the dicing lines is extremely small, the laser heads do not interfere with each other, and a plurality of lines can be processed simultaneously even in the central portion of the wafer.

  Furthermore, since the plurality of laser heads can move independently in the Z direction, the Z direction position of the condensing point of the laser light emitted from each laser head can be set to a different position. Therefore, a plurality of modified region layers can be formed inside the wafer within one processing stroke, and even a thick wafer can be easily cleaved.

  In the dicing method of the present invention, the two laser heads are positioned above both ends of the wafer and indexed and fed from both ends of the wafer toward the center, or the two laser heads are positioned above the center of the wafer. The two laser heads are positioned at one or more pitches in the Y direction, and the two laser heads are in the Y direction. Since two dicing lines are processed at the same pitch in the same direction, the two lines are simultaneously processed over the entire surface of the wafer with almost the same processing stroke as when one laser head is used. And the processing efficiency is remarkably improved.

  Also, two laser heads are positioned at a position separated by one pitch or a plurality of pitches in the Y direction and indexed and fed by one pitch in the same direction, or the two laser heads are separated by a predetermined distance on the same straight line in the X direction. Thus, the wafer is indexed and fed at a predetermined pitch, and one line is delayed by one pitch or a plurality of pitches or delayed by a predetermined distance, so that the wafer can be surely diced.

  Preferred embodiments of a laser dicing apparatus and a dicing method according to the present invention will be described below in detail with reference to the accompanying drawings. In each figure, the same number or symbol is attached to the same member.

  FIG. 1 is a perspective view showing an internal configuration of a dicing apparatus according to the present invention. The dicing apparatus 10 includes a chuck table 12 that sucks and places a wafer on a main body base (not shown) and is moved in the Xθ direction by a driving mechanism (not shown). The chuck table 12 includes an X table 12A, a θ table 12B, and a suction table 12C. The suction table 12C is rotated by θ while a wafer is sucked thereon, and is processed and fed in the X direction.

  A Y guide base 41 is provided above the chuck table 12. The Y guide base 41 is guided by Y guide rails 42, 42 and is moved in the Y direction by a drive mechanism (not shown). Is provided. Each Y table 43 is provided with two Z tables 52, 52 that are guided by Z guide rails 51, 51 and moved in the Z direction by a drive mechanism (not shown).

  A laser head 31 is attached to each Z table 52 via a holder 32, and the two laser heads 31 and 31 are independently moved in the Z direction and independently indexed in the Y direction. It is supposed to be sent.

  In addition, the dicing apparatus 10 includes a wafer cassette elevator (not shown), a wafer transfer means, an operation plate, a television monitor, an indicator lamp, a controller 40, and the like.

  The wafer cassette elevator moves the cassette in which the wafer is stored up and down to position it at the transfer position. The conveying means conveys the wafer between the cassette and the chuck table 12.

  On the operation plate, switches for operating each part of the dicing device 10 and a display device are attached. The television monitor displays a wafer image captured by a CCD camera (not shown), displays program contents, various messages, and the like. The indicator lamp displays an operation status such as processing end, emergency stop, etc. during processing of the dicing apparatus 10. The controller housed inside the dicing apparatus main body includes a CPU, a memory, an input / output circuit unit, and the like, and controls the operation of each unit of the dicing apparatus 10.

  FIG. 2 is a side view for explaining the configuration of the laser head 31. The laser head 31 is positioned above the wafer W so as to irradiate the wafer W placed on the chuck table 12 provided on the base 11 of the dicing apparatus 10 with the laser light L.

  The laser head 31 includes a laser oscillator 31A, a collimating lens 31B, a mirror 31C, a condensation lens 31D, and the like. As shown in FIG. 2, the laser light L oscillated from the laser oscillator 31A is parallel to the horizontal direction by the collimating lens 31B. The reflected light is reflected by the mirror 31C in the vertical direction and condensed by the condensation lens 31D.

  When the condensing point of the laser beam L is set inside the thickness direction of the wafer W placed on the chuck table 12, the energy of the laser beam L transmitted through the surface of the wafer W is concentrated at the condensing point, and the inside of the wafer In the vicinity of the light condensing point, a modified region such as a crack region due to multiphoton absorption, a melting region, a refractive index changing region, or the like is formed.

  The laser head 31 has a tilt mechanism (not shown) so that the laser beam L can be irradiated at an arbitrary angle with respect to the wafer surface.

  FIG. 3 is a conceptual diagram for explaining a modified region formed in the vicinity of a condensing point inside the wafer. FIG. 3A shows a state in which the modified region P is formed at the condensing point of the laser light L incident inside the wafer W, and FIG. 3B shows that the wafer W is moved in the horizontal direction and modified. This represents a state in which the quality regions P are formed side by side. In this state, the wafer W is naturally cleaved starting from the reforming region P, or is cleaved starting from the reforming region P by applying a slight external force. In this case, the wafer W is easily divided into chips without causing chipping on the front and back surfaces.

  When the wafer W is diced by the laser dicing apparatus 10 of the present invention, as shown in FIG. 4, the wafer W is mounted on a dicing frame F via a dicing tape T having an adhesive on one side, and a dicing process is performed. The inside is conveyed in this state. As described above, since the wafer W has the dicing tape T attached to the back surface, even if the wafer W is divided into individual chips, the wafers W do not fall apart one by one.

  Next, the operation of the laser dicing apparatus 10 according to the present invention will be described. In dicing, the wafer W initially placed on the chuck table 12 is photographed with a circuit pattern and alignment marks on the surface by a CCD camera (not shown), and is aligned by an alignment means having an image processing means.

  Next, the two laser heads 31, 31 are sent by the Y tables 43, 43 and positioned on the dicing line of the wafer W. Here, the laser light L, L is irradiated onto the wafer W from the laser heads 31, 31 adjusted in height in the Z direction by the Z tables 52, 52 so that the condensing point is located inside the wafer W. The wafer W is processed and fed in the X direction by the X table 12A. As a result, a modified region is formed inside the wafer of the two dicing lines.

  Next, the two laser heads 31 and 31 are indexed and sent to the next dicing line by the Y tables 43 and 43, and the wafer W is processed and fed in the X direction under the laser light L and L irradiation, and the next two In the dicing line, a modified region is formed inside the wafer. When the laser irradiation to all the dicing lines is completed, the wafer W is rotated by 90 ° by the θ table 12B, and the dicing line perpendicular to the previous dicing line is irradiated with the laser light L. As for the dicing line on this side, the X-direction processing feed of the wafer W and the Y-direction indexing feed of the laser heads 31 and 31 are repeated, and when the laser irradiation of all the lines is completed, the laser dicing of one wafer W is completed.

  Next, the dicing method according to the present invention will be described. FIG. 5 is a side view for explaining the first embodiment. FIG. 8 is a conceptual plan view thereof. In the dicing method of the present invention, as shown in FIGS. 5 and 8, first, the laser beam irradiation point L1 of the first laser head 31-1 and the laser beam irradiation point L2 of the second laser head 31-2 are the wafer. Two dicing lines at both ends of the wafer W are laser-diced simultaneously by the X-direction processing feed of the chuck table 12 positioned on dicing lines (S1, S22 in FIG. 8) at both ends of W.

  Next, the first laser head 31-1 and the second laser head 31-2 are indexed and fed in a direction approaching each other, and the laser light irradiation point L1 is positioned at S2 and the laser light irradiation point L2 is positioned at S21. The next two dicing lines of the wafer W are sequentially laser-diced simultaneously by the X-direction processing feed of the chuck table 12. In this way, laser dicing is performed on all dicing lines in this direction (hereinafter referred to as CH-2).

  At this time, the X-direction machining feed stroke is the shortest at the end of the wafer W and becomes longer toward the center of the wafer W. That is, the stroke is set along the outer shape of the wafer W by the stroke of the wafer W plus alpha. The plus alpha is a value in consideration of the center distance of the tip portions of the first laser head 31-1 and the second laser head 31-2 and the stroke margin.

  When the CH-2 laser dicing is completed, the wafer W is rotated by 90 [deg.], And the process proceeds to processing of a line in a direction orthogonal to the CH-2 dicing line (hereinafter referred to as CH-1). At the end of laser dicing of CH-2, the first laser head 31-1 and the second laser head 31-2 are on the same line at the center of the wafer W, as shown in the plan view of FIG. As shown in FIG. 9, since it is on the line next to the center part, when starting CH-1, it starts from the line next to the center part and away from each other toward both ends of the wafer W. It is indexed. In this way, all the dicing lines of the wafer W are laser-diced.

  The first direction of dicing is referred to as CH-2. In the alignment of the wafer before dicing, CH-1 is first aligned, and then CH-2 is rotated by 90 °. It is because it is diced from.

  At the start of CH-1, the first laser head 31-1 and the second laser head 31-2 return to both ends of the wafer W shown in FIGS. 5 and 8, and index from there toward the center. May be sent.

  Further, in the laser dicing of CH-2, the first laser head 31-1 and the second laser head 31-2 are indexed and fed in directions approaching each other, and interfere with each other when approaching the center of the wafer W. In such a case, the index is sent out as shown in the conceptual diagram of FIG.

  That is, the laser beam irradiation point L1 of the first laser head 31-1 and the laser beam irradiation point L2 of the second laser head 31-2 are first positioned on the dicing lines S1 and S22 at both ends of the wafer W, The laser beam irradiation point L1 is indexed and sent to the dicing line S8, and the laser beam irradiation point L2 is sequentially indexed and sent to the dicing line S15 (step 1 in FIG. 10).

  Next, the laser beam irradiation point L1 is sent to the dicing line S9, and the laser beam irradiation point L2 is sent to the dicing line S12. From there, the laser beam irradiation point L1 is indexed and sent to the dicing lines S10 and S11, and the laser beam irradiation point L2 is indexed and sent to the dicing lines S13 and S14 (step 2 in FIG. 10), and all the lines are diced. And rotated to CH-1.

  In CH-1, as shown in FIG. 11, the laser beam irradiation point L1 is positioned on the dicing line S11 and the laser beam irradiation point L2 is positioned on the dicing line S14, and from there both in the same direction, that is, the laser beam irradiation point L1. Is indexed to the dicing lines S10 and S9, and the laser beam irradiation point L2 is indexed and sent to the dicing lines S13 and S12 (step 1 in FIG. 11).

  Next, the laser beam irradiation point L1 is sent to the dicing line S8, the laser beam irradiation point L2 is sent to the dicing line S15, and from there to the dicing line S1 and the dicing line S22 at both ends of the wafer W are indexed in directions away from each other. It is fed (step 2 in FIG. 11) and all lines are diced.

  By indexing and feeding the laser beam irradiation point L1 of the first laser head 31-1 and the laser beam irradiation point L2 of the second laser head 31-2 as shown in FIG. 10 and FIG. Even in the case where the first laser head 31-1 and the second laser head 31-2 interfere with each other at the center, dicing can be efficiently performed by two lines.

  According to the first embodiment described above, since the widths of the tip portions of the laser head 31-1 and the second laser head 31-2 are narrow, the wafer W is laser-diced by one laser head 31. Since every two dicing lines are processed simultaneously with almost the same X-direction machining stroke, the dicing time is almost halved.

  Next, a second embodiment of the dicing method of the present invention will be described. First, as shown in the plan view of FIG. 6, the first laser head 31-1 and the second laser head 31-2 are moved to the center of the wafer W and positioned on the two dicing lines at the center. It is done.

  From this state, the machining feed in the X direction and the index feed in the direction in which the first laser head 31-1 and the second laser head 31-2 move away from each other toward the both ends of the wafer W are repeated. -2 laser dicing is performed. At the end of CH-2 dicing, the first laser head 31-1 and the second laser head 31-2 are positioned at both ends of the wafer W as shown in FIG. Further, the CH-1 dicing is performed while the first laser head 31-1 and the second laser head 31-2 are indexed and fed from both ends of the wafer W toward the center.

  Also in the case of the second embodiment, the X-direction machining feed stroke is shortest at the end of the wafer W and becomes longer toward the center of the wafer W, and the stroke of the wafer W plus alpha along the outer shape of the wafer W. Set by. Since the widths of the tips of the laser head 31-1 and the second laser head 31-2 are narrow, the wafer W has two X-direction machining strokes that are almost the same as when laser dicing is performed with one laser head 31. Since each dicing line is processed simultaneously, the dicing time is almost halved.

  FIG. 7 is a side view showing a third embodiment of the dicing method according to the present invention. FIG. 12 is a conceptual plan view thereof. In the third embodiment, first, in the laser dicing of CH-2, the first laser head 31-1 is positioned on the dicing line in the center of the wafer W, and the second laser head 31-2 is the wafer dicing of the wafer W. Positioned at the end dicing line.

  That is, the laser beam irradiation point L1 of the first laser head 31-1 is positioned on the dicing line S12, and the laser beam irradiation point L2 of the second laser head 31-2 is positioned on the dicing line S1.

  From here, the first laser head 31-1 and the second laser head 31-2 are indexed and fed in a predetermined pitch amount in the same direction. That is, the first laser head 31-1 is indexed and fed toward the end portion of the wafer W, and the second laser head 31-2 is indexed and fed toward the center portion of the wafer W. In CH-1 dicing rotated 90 °, the first laser head 31-1 is now indexed and fed toward the center of the wafer W, and the second laser head 31-2 is the end of the wafer W. It is indexed and sent to.

  Also in the case of the third embodiment, the widths of the tip portions of the laser head 31-1 and the second laser head 31-2 are narrow, so the wafer W is almost the same as when laser dicing is performed with one laser head 31. Since two dicing lines are simultaneously processed with the same X-direction processing stroke, the dicing time can be almost halved. In the case of the third embodiment, the machining stroke in the X direction is constant at the diameter of the wafer W plus alpha. Further, the first laser head 31-1 and the second laser head 31-2 are indexed in the same direction, and the feed control in the X direction and the Y direction is simplified.

  FIG. 13 shows a modification of the above-described third embodiment in which the first laser head 31-1 and the second laser head 31-2 are indexed and fed in the same direction. In this modification, in CH-2, first, the laser beam irradiation point L1 of the first laser head 31-1 is on the dicing line S1, and the laser beam irradiation point L2 of the second laser head 31-2 is first. Positioned on the dicing line S2, the dicing lines S1 and S2 are diced simultaneously.

  Next, the first laser head 31-1 and the second laser head 31-2 are divided and sent out by two pitches in the same direction. That is, the laser beam irradiation point L1 of the first laser head 31-1 is positioned on the dicing line S3, and the laser beam irradiation point L2 of the second laser head 31-2 is positioned on the dicing line S4. And S4 are diced simultaneously. In the same manner, dicing lines S21 and S22 are processed.

  The same operation is performed on the CH-1 side where the wafer W is rotated by 90 °, and all lines are diced.

  FIG. 14 shows another modification of the third embodiment. This another modification is a method for dealing with the case where the first laser head 31-1 and the second laser head 31-2 interfere with each other when they are very close to each other.

  In this other modification, the laser beam irradiation point L1 of the first laser head 31-1 is on the dicing line S1, and the laser beam irradiation point L2 of the second laser head 31-2 is several pitches away from the dicing line S1. Is positioned on the dicing line (S4 in the case of FIG. 14), from which the laser beam irradiation point L1 is sequentially indexed and fed to the dicing lines S2 and S3, and the laser beam irradiation point L2 is sequentially indexed to the dicing lines S5 and S6. Is done.

  Next, the laser beam irradiation points L1 and L2 are sent by a distance twice as long as the distance from each other. That is, in the case of FIG. 14, the laser beam irradiation point L1 is indexed and sent to the dicing line S7, and the laser beam irradiation point L2 is indexed and sent to the dicing line S10.

  As described above, the first laser head 31-1 and the second laser head 31-2 are sent once every four pitches and then once at four pitches, and this operation is repeated.

  Thus, even if the first laser head 31-1 and the second laser head 31-2 interfere with each other when indexing and feeding as shown in FIG. 14 are performed, Dicing can be performed efficiently without greatly increasing the X-direction machining feed stroke.

  FIG. 15 is a conceptual diagram showing a fourth embodiment of the dicing method according to the present invention. The fourth embodiment shows a processing method in which one dicing line is irradiated twice with the laser light of the first laser head 31-1 and the laser light of the second laser head 31-2. .

  As shown in FIG. 15, the laser beam irradiation point L1 of the first laser head 31-1 and the laser beam irradiation point L2 of the second laser head 31-2 are separated by a predetermined distance on the same dicing line S1. The dicing line S1 is first irradiated with the laser beam of the first laser head 31-1 by the left feed of the chuck table 12 in the X direction, and then the laser beam of the second laser head 31-2 is emitted with a predetermined distance delay. Irradiated.

  Next, the first laser head 31-1 and the second laser head 31-2 are indexed and fed by one pitch and positioned on the dicing line S <b> 2. -2 is preceded by the laser beam of the first laser head 31-1, and this operation is repeated.

  Further, as shown in FIG. 16, the laser beam irradiation point L1 of the first laser head 31-1 and the laser beam irradiation point L2 of the second laser head 31-2 are separated by one pitch or several pitches in the Y direction. Alternatively, the laser beam of the first laser head 31-1 may be irradiated in advance, and the laser beam of the second laser head 31-2 may be irradiated with a delay of one line or several lines.

  In the fourth embodiment, the wafer is formed with a modified layer inside W by the first laser beam irradiation, and the modified layer is cleaved from the starting point by the second laser beam irradiation, or the way is Efficient processing is possible, for example, when two modified layers are formed inside.

  In the case of FIG. 16, the laser light of the first laser head 31-1 and the laser light of the second laser head 31-2 are different types of laser light, and different processing is performed with each laser light. You can also.

  For example, in the case of a wafer W having a die attach tape attached to the back surface, the wafer W is diced with the laser beam of the first laser head 31-1, and the wafer W is irradiated with the laser beam of the second laser head 31-2. It can be used for processing such as fusing the die attach tape affixed to the back of the tape.

The perspective view showing the internal structure of the laser dicing apparatus based on this invention Side view showing the configuration of the laser head Conceptual diagram explaining the reformed area formed inside the wafer Perspective view showing wafer mounted on frame The side view showing 1st Embodiment of the dicing method concerning this invention The top view showing 2nd Embodiment of the dicing method concerning this invention. Side view showing the third embodiment of the dicing method according to the present invention. 1 is a conceptual plan view showing a first embodiment of a dicing method according to the present invention. Conceptual plan view 2 representing the first embodiment Conceptual plan view 3 representing the first embodiment 4 is a conceptual plan view showing the first embodiment. Conceptual plan view showing a third embodiment of the dicing method according to the present invention. Conceptual plan view showing a modification of the third embodiment The conceptual top view showing another modification of 3rd Embodiment Conceptual plan view showing a fourth embodiment of the dicing method according to the present invention. Conceptual plan view showing a modification of the fourth embodiment

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 ... Laser dicing apparatus, 12 ... Chuck table, 12A ... X table, 12B ... θ table, 12C ... Suction table, 31 ... Laser head, 31A ... Laser oscillator, 31B ... Collimating lens, 31C ... Mirror, 31D ... Condensation lens, 43 ... Y table, 52 ... Z table, F ... frame, L ... laser light, L1, L2 ... laser light irradiation point, P ... modified region, T ... dicing tape, W ... wafer

Claims (1)

A dicing apparatus for dividing a wafer into individual chips, wherein a laser beam is incident from the surface of the wafer to form a modified region inside the wafer.
The laser is provided so as to face the common Y guide base and can be arranged on the same straight line in the X direction as the processing direction so that the condensing points of the laser light irradiated toward the same surface of the wafer can be arranged. Two laser heads, each of which is provided in parallel with the Y direction, and independently moves only in the Y direction and the Z direction ,
A chuck table for placing the wafer and moving in the X direction which is a processing direction relative to the two laser heads,
The two laser heads are provided so as to be able to irradiate the laser beam at an arbitrary angle with respect to the wafer surface, and can be independently moved in the Y direction orthogonal to the X direction. The laser dicing apparatus is configured to be independently movable in a Z direction orthogonal to the X direction and the Y direction.

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