CN112638573B - Processing system and processing method - Google Patents

Processing system and processing method Download PDF

Info

Publication number
CN112638573B
CN112638573B CN201980056207.1A CN201980056207A CN112638573B CN 112638573 B CN112638573 B CN 112638573B CN 201980056207 A CN201980056207 A CN 201980056207A CN 112638573 B CN112638573 B CN 112638573B
Authority
CN
China
Prior art keywords
wafer
processing
processing object
peripheral edge
modification layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201980056207.1A
Other languages
Chinese (zh)
Other versions
CN112638573A (en
Inventor
田之上隼斗
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN112638573A publication Critical patent/CN112638573A/en
Application granted granted Critical
Publication of CN112638573B publication Critical patent/CN112638573B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/70—Auxiliary operations or equipment
    • B23K26/702—Auxiliary equipment
    • B23K26/703—Cooling arrangements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices

Abstract

A processing system that processes a processing object, the processing system comprising: a modifying device for forming an internal surface modifying layer in the surface direction inside the processing object; and a separation device for separating the object to be processed with the internal surface modification layer as a base point, wherein the modification device comprises: a laser irradiation unit that irradiates the inside of the processing object with a plurality of laser beams; and a moving mechanism that relatively moves the laser irradiation unit and the processing object, wherein the modifying device forms the internal surface modifying layer by relatively moving the plurality of laser beams from the laser irradiation unit with respect to the processing object by the moving mechanism.

Description

Processing system and processing method
Technical Field
The present disclosure relates to processing systems and processing methods.
Background
Patent document 1 discloses a method for manufacturing a stacked semiconductor device. In this manufacturing method, two or more semiconductor wafers are stacked to manufacture a stacked semiconductor device. At this time, each semiconductor wafer is back-ground to have a predetermined thickness after being stacked on another semiconductor wafer.
Prior art literature
Patent literature
Patent document 1: japanese patent application laid-open No. 2012-69736
Disclosure of Invention
Problems to be solved by the invention
The technology according to the present disclosure can efficiently thin a processing target body.
Solution for solving the problem
One aspect of the present disclosure is a processing system that processes a processing target body, the processing system including: a modifying device for forming an internal surface modifying layer in the surface direction inside the processing object; and a separation device for separating the object to be processed with the internal surface modification layer as a base point, wherein the modification device comprises: a laser irradiation unit that irradiates the inside of the processing object with a plurality of laser beams; and a moving mechanism that relatively moves the laser irradiation unit and the processing object, wherein the modifying device forms the internal surface modifying layer by relatively moving the plurality of laser beams from the laser irradiation unit with respect to the processing object by the moving mechanism.
ADVANTAGEOUS EFFECTS OF INVENTION
According to the present disclosure, the processing object can be thinned efficiently.
Drawings
Fig. 1 is a schematic plan view schematically showing the configuration of a wafer processing system according to the present embodiment.
Fig. 2 is a schematic side view showing a structure of a laminated wafer.
Fig. 3 is a schematic side view showing a partial structure of a laminated wafer.
Fig. 4 is a schematic side view showing the structure of the reformer.
Fig. 5 is a schematic side view showing the structure of the separator.
Fig. 6 is a flowchart showing main steps of wafer processing according to the present embodiment.
Fig. 7 is an explanatory diagram of main steps of wafer processing according to the present embodiment.
Fig. 8 is an explanatory diagram showing a mode of forming a peripheral edge modified layer and dividing the modified layer in a wafer processing in the modifying apparatus.
Fig. 9 is an explanatory diagram showing a mode of forming a peripheral edge modified layer and dividing the modified layer in a wafer processing in the modifying apparatus.
Fig. 10 is an explanatory view showing a form of removing the peripheral edge portion of the processed wafer in the peripheral edge removing apparatus.
Fig. 11 is an explanatory view showing a mode of forming an inner surface modification layer on a processed wafer in the modification apparatus.
Fig. 12 is an explanatory view showing a mode of forming an inner surface modification layer on a processed wafer in the modification apparatus.
Fig. 13 is an explanatory view showing a mode of separating a back side wafer from a process wafer in the separating apparatus.
Fig. 14 is a schematic side view showing a structure of a reformer according to another embodiment.
Fig. 15 is an explanatory view showing an embodiment of a modifying apparatus for forming an inner surface modified layer on a processed wafer according to another embodiment.
Fig. 16 is an explanatory view showing an embodiment of a modifying apparatus for forming an inner surface modified layer on a processed wafer according to another embodiment.
Fig. 17 is an explanatory view showing an embodiment of a modifying apparatus for forming an inner surface modified layer on a processed wafer according to another embodiment.
Fig. 18 is an explanatory view showing an embodiment of a modifying apparatus for forming an inner surface modified layer on a processed wafer according to another embodiment.
Fig. 19 is an explanatory view showing an embodiment of a modifying apparatus for forming an inner surface modified layer on a processed wafer according to another embodiment.
Fig. 20 is an explanatory view showing an embodiment of a modifying apparatus for forming an inner surface modified layer on a processed wafer according to another embodiment.
Fig. 21 is a schematic side view showing a structure of a separation device according to another embodiment.
Fig. 22 is a schematic side view showing a structure of a separation device according to another embodiment.
Fig. 23 is a flowchart showing main steps of wafer processing according to another embodiment.
Fig. 24 is an explanatory diagram of main steps of wafer processing according to another embodiment.
Fig. 25 is an explanatory view showing a mode of forming a peripheral edge modified layer on a wafer in the modifying apparatus according to another embodiment.
Fig. 26 is an explanatory diagram of main steps of wafer processing according to another embodiment.
Fig. 27 is a schematic side view showing the structure of the interface processing apparatus.
Fig. 28 is an explanatory diagram showing a form of supporting a wafer in a main process of wafer processing.
Fig. 29 is a longitudinal sectional view showing a configuration in which the peripheral edge modification layer is formed radially inward of the end portion of the oxide film.
Fig. 30 is a schematic side view showing the structure of the interface processing apparatus.
Detailed Description
In a semiconductor device manufacturing process, for example, as in the method disclosed in patent document 1, a semiconductor wafer (hereinafter referred to as a wafer) having a plurality of electronic circuits and other devices formed on its front surface is subjected to a process of grinding the back surface of the wafer to thin the wafer.
The grinding of the back surface of the wafer is performed, for example, by rotating the wafer and the grinding wheel, respectively, and lowering the grinding wheel in a state in which the grinding wheel is brought into contact with the back surface. In this case, the grinding wheel wears out and needs to be replaced periodically. In addition, in the grinding process, a grinding fluid is used, and a waste liquid treatment of the grinding fluid is also required. Therefore, the running cost is high. Therefore, there is room for improvement in the conventional wafer thinning process.
In addition, although the peripheral edge portion of the wafer is generally chamfered, if the back surface of the wafer is ground as described above, the peripheral edge portion of the wafer has a sharp shape (so-called blade shape). In this way, a chipping may occur at the peripheral edge of the wafer, and the wafer may be damaged. Then, a so-called edge finishing for removing the peripheral edge portion of the wafer is performed in advance before the grinding process. Further, for example, in the method disclosed in patent document 1, the peripheral edge portion of the wafer is locally ground or cut, and this edge trimming is performed.
The technology according to the present disclosure can efficiently perform wafer thinning processing. A wafer processing system and a wafer processing method according to the present embodiment are described below with reference to the drawings. In the present specification and the drawings, elements having substantially the same functional configuration are denoted by the same reference numerals, and repetitive description thereof will be omitted.
First, the configuration of the wafer processing system according to the present embodiment will be described. Fig. 1 is a schematic plan view schematically showing the structure of a wafer processing system 1.
In the wafer processing system 1, as shown in fig. 2 and 3, a laminated wafer T as a processing target body formed by bonding a processing wafer W and a supporting wafer S is subjected to a predetermined process, and the processing wafer W is thinned. Hereinafter, for the processing wafer W, the surface bonded to the support wafer S is referred to as a front surface Wa, and the surface opposite to the front surface Wa is referred to as a rear surface Wb. Similarly, for the support wafer S, the surface bonded to the processing wafer W is referred to as a front surface Sa, and the surface opposite to the front surface Sa is referred to as a rear surface Sb.
The handle wafer W is, for example, a semiconductor wafer such as a silicon wafer, and a device layer D including a plurality of devices is formed on the surface Wa. In addition, an oxide film Fw, such as SiO, is formed on the device layer D 2 Film (TEOS film). The peripheral edge portion of the processed wafer W is chamfered, and the cross section of the peripheral edge portion becomes smaller in thickness as going toward the tip end thereof.
The support wafer S is a wafer for supporting the processing wafer W, and is, for example, a silicon wafer. An oxide film Fs, such as SiO, is formed on the surface Sa of the support wafer S 2 Film (TEOS film). The support wafer S also functions as a protector for protecting the device on the surface Wa of the handle wafer W. In addition, a plurality of wafers S are formed on the surface Sa supporting the wafer SIn the device, a device layer (not shown) is formed on the surface Sa in the same manner as the processing wafer W.
In fig. 2, the device layer D and the oxide films Fw and Fs are not shown in order to avoid complexity of the drawing. In other drawings used in the following description, the device layer D and the oxide films Fw and Fs may be omitted.
As shown in fig. 1, the substrate processing system 1 has a structure in which a carry-in/carry-out station 2 and a processing station 3 are integrally connected. The carry-in/carry-out station 2 carries in and out a cassette Ct capable of accommodating a plurality of stacked wafers T between, for example, the carry-in/carry-out station and the outside. The processing station 3 includes various processing apparatuses for performing predetermined processing on the stacked wafers T.
The loading and unloading station 2 is provided with a cassette loading table 10. In the illustrated example, a plurality of, for example, 4 cartridges Ct are placed on the cartridge placement stage 10 in a row along the Y-axis direction. The number of cassettes Ct placed on the cassette placement stage 10 is not limited to the embodiment, and may be arbitrarily determined.
A wafer transfer area 20 is provided adjacent to the cassette stage 10 in the in-and-out station 2. The wafer transfer area 20 is provided with a wafer transfer device 22 movable along a transfer path 21 extending in the Y-axis direction. The wafer conveying device 22 has, for example, two conveying arms 23, 23 for holding and conveying the stacked wafers T. Each of the conveying arms 23 is configured to be movable in the horizontal direction, in the vertical direction, around the horizontal axis, and around the vertical axis. The structure of the transport arm 23 is not limited to the present embodiment, and any structure may be employed.
A wafer transfer area 30 is provided at the processing station 3. The wafer transfer area 30 is provided with a wafer transfer device 32 movable along a transfer path 31 extending in the X-axis direction. The wafer transport device 32 is configured to be capable of transporting the laminated wafer T with respect to a transport device 34, a modifying device 40, a peripheral edge removing device 41, a separating device 42, a wet etching device 43, and a grinding device 44, which will be described later. The wafer transfer device 32 includes, for example, two transfer arms 33 and 33 for holding and transferring the stacked wafers T. Each of the conveying arms 33 is configured to be movable in the horizontal direction, in the vertical direction, around the horizontal axis, and around the vertical axis. The structure of the transport arm 33 is not limited to the present embodiment, and any structure may be employed.
A transfer device 34 for transferring the laminated wafer T is provided between the wafer transfer area 20 and the wafer transfer area 30.
On the Y-axis positive direction side of the wafer transfer area 30, a modifying device 40 and a peripheral edge removing device 41 are arranged in this order along the X-axis direction from the in-and-out station 2 side. On the negative Y-axis direction side of the wafer transfer area 30, a separator 42 and a wet etching device 43 are arranged in this order along the X-axis direction from the carry-in/out station 2 side. A grinding device 44 is disposed on the positive X-axis side of the wafer transfer region 30.
The modifying apparatus 40 irradiates the inside of the processing wafer W with a laser beam to form an inner surface modifying layer, a peripheral modifying layer, and a divided modifying layer, which will be described later. As shown in fig. 4, the modifying apparatus 40 includes a chuck 50 for holding the stacked wafers T in a state where the processed wafers W are disposed on the upper side and the support wafers S are disposed on the lower side. The chuck 50 is configured to be movable in the X-axis direction and the Y-axis direction by a moving portion 51. The moving unit 51 is constituted by a usual precision XY stage. The chuck 50 is rotatable around the vertical axis by a rotating portion 52.
A 1 st laser head 60 for forming an inner surface modification layer is provided above the chuck 50 as a laser irradiation section for irradiating a laser beam into the processing wafer W. The 1 st laser head 60 irradiates a predetermined position inside the processing wafer W with a high-frequency pulse laser beam oscillated from a laser oscillator (not shown) while converging the laser beam having a wavelength that is transmissive to the processing wafer W. Thereby, the portion where the laser beam is condensed inside the processing wafer W is modified, and an inner surface modification layer is formed. The 1 st laser head 60 irradiates a laser beam from a laser oscillator simultaneously with a plurality of laser beams divided by, for example, a lens. In this case, a plurality of laser beams are irradiated from the 1 st laser head 60, and a plurality of inner surface modification layers are simultaneously formed inside the processing wafer W. The 1 st laser head 60 is configured to be movable in the X-axis direction and the Y-axis direction by a moving portion 61. The moving unit 61 is constituted by a usual precision XY stage. The 1 st laser head 60 is movable in the Z-axis direction by a lifting/lowering portion 62.
A 2 nd laser head 70, which is a peripheral edge modification laser head, is provided above the chuck 50 as a laser irradiation section for irradiating the inside of the processing wafer W with a laser beam. The 2 nd laser head 70 is a pulsed laser beam with a high frequency oscillated by a laser oscillator (not shown), and is a laser beam with a wavelength having transmissivity with respect to the processing wafer W, and irradiates a predetermined position inside the processing wafer W with the laser beam. Thereby, the laser beam is converged in the processing wafer W to be partially modified, thereby forming a peripheral modified layer or a divided modified layer. The 2 nd laser head 70 may irradiate a laser beam having a single focal point or a plurality of focal points. The 2 nd laser head 70 is configured to be movable in the X-axis direction and the Y-axis direction by a moving portion 71. The moving unit 71 is constituted by a usual precision XY stage. The 2 nd laser head 70 is movable in the Z-axis direction by a lifting/lowering portion 72.
In the present embodiment, the moving unit 51, the rotating unit 52, and the moving unit 61 constitute a moving mechanism of the present disclosure. In the following description, when the 1 st laser head 60 is moved in the horizontal direction, the 1 st laser head 60 may be moved horizontally with respect to the processing wafer W. That is, the processing wafer W can be moved in the horizontal direction. In the case of rotating the processing wafer W, the 1 st laser head 60 may be rotated relative to the processing wafer W about the center of the processing wafer W as an axis. That is, the 1 st laser head 60 can be rotated with respect to the processing wafer W.
The peripheral edge removing device 41 shown in fig. 1 removes the peripheral edge portion of the processed wafer W with the peripheral edge modifying layer formed by the modifying device 40 as a base point.
The separating device 42 separates the portion of the rear surface Wb side of the processed wafer W from the inner surface modification layer formed by the modifying device 40. The separating apparatus 42 includes a stage 80, and the stage 80 holds the stacked wafers T in a state where the processing wafers W are disposed on the upper side and the support wafers S are disposed on the lower side as shown in fig. 5. A refrigerant flow path 81 is formed inside the mounting table 80 as a cooling mechanism. The refrigerant, for example, cooling water or cooling gas is supplied to the refrigerant flow path 81 from a cooling unit (not shown) provided outside the reformer 40. Then, the support wafer S side (the surface Wa side of the processing wafer W) of the laminated wafer T placed on the stage 80 is cooled by the refrigerant flowing through the refrigerant flow path 81. The cooling mechanism provided inside the mounting table 80 is not limited to this embodiment, and may be, for example, a peltier element.
A 3 rd laser head 90 is provided above the stage 80 as a heating means for irradiating the inside of the processing wafer W with a laser beam. The 3 rd laser head 90 irradiates the inner surface modification layer formed by the modification device 40 with a high-frequency pulse laser beam oscillated from a laser oscillator (not shown) and a laser beam having a wavelength that is transmissive to the processing wafer W. Thus, the inner surface modification layer is heated. Alternatively, the laser beam may be continuously oscillated from the 3 rd laser head 90. The 3 rd laser head 90 may be configured to be movable in the X-axis direction and the Y-axis direction by the moving portion 91. The moving unit 91 is constituted by a usual precision XY stage. The 3 rd laser head 90 may be movable in the Z-axis direction by a lifting/lowering portion 92.
A chuck 100 for sucking and holding the back surface Wb of the processed wafer W is provided above the mounting table 80. The suction cup 100 is rotatable around a vertical axis by a rotating unit 101. The suction cup 100 is configured to be movable in the Z-axis direction by the lifting/lowering unit 102.
The wet etching apparatus 43 shown in fig. 1 supplies a chemical solution (etching solution) to the back surface Wb of the processing wafer W. Then, the back surface Wb ground by the grinding device 44 is subjected to etching treatment. Here, grinding marks may be formed on the back surface Wb, which constitutes the damaged surface. In addition, for chemical solutions, use is made of, for example, HF, HNO 3 、H 3 PO 4 TMAH, choline, KOH, etc.
The grinding device 44 grinds the back surface Wb of the processed wafer W. Then, the inner surface modification layer is removed from the rear surface Wb on which the inner surface modification layer is formed, and the peripheral modification layer is further removed. Specifically, the grinding device 44 rotates the processing wafer W (laminated wafer T) and the grinding wheel with the grinding wheel being brought into contact with the back surface Wb, and then lowers the grinding wheel for processing. The inner surface modification layer and the peripheral edge modification layer are damaged layers, and the back surface Wb forms a damaged surface.
The wafer processing system 1 described above is provided with a control device 110. The control device 110 is, for example, a computer, and has a program storage unit (not shown). The program storage unit stores a program for controlling the processing of the stacked wafers T by the wafer processing system 1. The program storage unit also stores a program for controlling the operations of the drive systems of the various processing apparatuses, the transport apparatuses, and the like described above to realize wafer processing described later in the wafer processing system 1. Further, the above-described program may be stored in a computer-readable storage medium H, and installed from the storage medium H to the control device 110.
Next, wafer processing performed using the wafer processing system 1 configured as described above will be described. Fig. 6 is a flowchart showing main steps of wafer processing. In the present embodiment, the wafer to be processed W and the support wafer S are bonded by van der waals force and hydrogen bond (intermolecular force) by a bonding device (not shown) outside the wafer processing system 1, and the laminated wafer T is formed in advance.
First, as shown in fig. 7 (a), a cassette Ct containing a plurality of stacked wafers T is placed on the cassette stage 10 of the in-and-out station 2.
Next, the stacked wafers T in the cassette Ct are taken out by the wafer transfer device 22, and transferred to the transfer device 34. Next, the stacked wafers T of the transfer device 34 are taken out by the wafer transfer device 32, and transferred to the modifying device 40. As shown in fig. 7 b, the modification apparatus 40 forms a peripheral modification layer M1 inside the processed wafer W (step A1 of fig. 6), and forms a divided modification layer M2 (step A2 of fig. 6).
In the modifying apparatus 40, the stacked wafer T is transferred to and held by the chuck 50. Thereafter, as shown in fig. 8, the 2 nd laser head 70 is moved above the processed wafer W, and the boundary between the peripheral edge We and the central portion Wc of the processed wafer W is formed. Then, the chuck 50 is rotated by the rotating unit 52, and the laser beam L is irradiated from the 2 nd laser head 70 into the processing wafer W, thereby forming the peripheral edge modified layer M1 in the processing wafer W (step A1 in fig. 6).
As shown in fig. 8 and 9, the peripheral edge modification layer M1 is formed in a ring shape along the boundary between the peripheral edge We and the center Wc of the target to be removed of the processing wafer W, as a base point when the peripheral edge We is removed during edge trimming. The peripheral edge We includes a chamfer in a range of, for example, 1 to 5mm from the outer end of the processed wafer W in the radial direction.
In addition, the peripheral edge modification layer M1 extends in the thickness direction and has a longitudinal aspect ratio. The lower end of the peripheral edge modification layer M1 is located above the target surface (broken line in fig. 8) of the processed wafer W after grinding. That is, the distance H1 between the lower end of the peripheral edge modification layer M1 and the surface Wa of the processed wafer W is greater than the target thickness H2 of the processed wafer W after grinding. In this case, the peripheral edge modified layer M1 does not remain on the ground processed wafer W.
Further, in the interior of the processed wafer W, the crack C1 progresses from the peripheral modified layer M1 to reach the front surface Wa and the back surface Wb. Further, the peripheral edge modification layer M1 may be formed in plurality in the thickness direction.
Next, the 2 nd laser head 70 is moved by the same reforming apparatus 40, and as shown in fig. 8, a divided reforming layer M2 is formed inside the processed wafer W and radially outside the peripheral reforming layer M1 (step A2 of fig. 6). The division modification layer M2 also extends in the thickness direction as in the peripheral modification layer M1, and has a longitudinal aspect ratio. In addition, the crack C2 progresses from the division modification layer M2 to the front face Wa and the back face Wb. The divided modification layer M2 may be formed in plurality in the thickness direction.
Next, a plurality of division modified layers M2 and a plurality of cracks C2 are formed at a pitch of several μm in the radial direction, whereby 1 row of division modified layers M2 extending radially outward from the peripheral modified layer M1 are formed as shown in fig. 9. In the illustrated example, the split modified layers M2 extending in the radial direction are formed in 8 portions, but the number of the split modified layers M2 is arbitrary. The peripheral edge We can be removed as long as the division modification layer M2 is formed at least at two positions. In this case, when the peripheral edge portion We is removed during edge trimming, the peripheral edge portion We is separated with the annular peripheral edge modified layer M1 as a base point, and is divided into a plurality of divided modified layers M2. This makes the removed peripheral edge We smaller, and can be removed more easily.
Next, the stacked wafer T is transported by the wafer transport device 32 to the peripheral edge removal device 41. In the peripheral edge removing apparatus 41, as shown in fig. 7 (c), the peripheral edge We of the processed wafer W is removed with the peripheral edge modification layer M1 as a base point (step A3 in fig. 6).
In the peripheral edge removing device 41, for example, as shown in fig. 10, the band 120 is expanded (expanded) to remove the peripheral edge portion We. First, as shown in fig. 10 (a), an expandable tape 120 is attached to the back surface Wb of the processing wafer W. Next, as shown in fig. 10 (b), the tape 120 is expanded in the radial direction of the processing wafer W, and the peripheral edge We is separated from the processing wafer W with the peripheral edge modified layer M1 as a base point. In this case, the peripheral edge We is formed into a small piece and separated with the dividing and modifying layer M2 as a base point. Thereafter, as shown in fig. 10 (c), the tape 120 is lifted up and peeled off from the processing wafer W, and the peripheral edge We is removed. In this case, in order to facilitate peeling of the tape 120, a treatment for reducing the adhesive force of the tape 120, for example, an ultraviolet irradiation treatment or the like may be performed.
The method of removing the peripheral edge We is not limited to this embodiment. For example, the peripheral edge We may be removed by blowing air or water jet to the peripheral edge We and pressing. Alternatively, for example, a jig such as forceps may be brought into contact with the peripheral edge We to physically remove the peripheral edge We.
Next, the stacked wafer T is conveyed again to the modifying apparatus 40 by the wafer conveying apparatus 32. As shown in fig. 7 (d), the modifying apparatus 40 forms an inner surface modifying layer M3 inside the processed wafer W (step A4 in fig. 6).
As shown in fig. 11, the laser beam L is irradiated from the 1 st laser head 60 into the processing wafer W to form an internal surface modification layer M3. The inner face modification layer M3 extends in the face direction and has a laterally long aspect ratio. The lower end of the inner surface modification layer M3 is located slightly above the target surface (broken line in fig. 11) of the processed wafer W after grinding. That is, the distance H3 between the lower end of the inner surface modification layer M3 and the surface Wa of the processed wafer W is slightly larger than the target thickness H2 of the processed wafer W after grinding. The internal surface modification layer M3 may have a longitudinal aspect ratio, and may be arranged such that the pitch between the plurality of internal surface modification layers M3 is reduced. In addition, the crack C3 progresses from the internal surface modification layer M3 in the plane direction. In addition, in the case where the pitch of the inner surface modification layer M3 is small, the crack C3 may be absent.
As shown in fig. 11 and 12, a plurality of, for example, 9 laser beams L are simultaneously irradiated from the 1 st laser head 60, and as shown in fig. 12 (a), 9 internal surface modification layers M3 are simultaneously formed. Then, the 1 st laser head 60 and the laminated wafer T are moved relatively in the horizontal direction, and the internal surface modification layer M3 is formed in 9 units inside the central portion Wc of the processed wafer W. Specifically, first, as shown in fig. 12 (b), the 1 st laser head 60 is moved in the X-axis direction, and 9 internal surface modification layers M3 are formed in a row. Thereafter, as shown in fig. 12 (c), the 1 st laser head 60 is offset in the Y-axis direction, and the 1 st laser head 60 is moved in the X-axis direction, whereby 9 inner surface modification layers M3 are arranged in another row. The plurality of inner face modification layers M3 are formed at the same height. Thereby, the inner surface modification layer M3 is formed on the entire inner surface of the center portion Wc. The number and arrangement of the laser beams L simultaneously irradiated from the 1 st laser head 60 are not limited to the present embodiment, but may be arbitrarily set.
In the reformer 40, the 1 st laser head 60 may be moved in the horizontal direction while rotating the chuck 50. In this case, the inner surface modification layer M3 is formed in a spiral shape in a plan view. Further, the pitch between the plurality of inner surface modification layers M3 may be changed in the concentric circle direction and the radial direction of the processing wafer W.
Next, the stacked wafer T is transported by the wafer transport device 32 to the separating device 42. As shown in fig. 7 e, the separating apparatus 42 separates a portion of the rear surface Wb side of the processed wafer W (hereinafter referred to as a rear surface wafer Wb 1) from the inner surface modification layer M3 (step A5 in fig. 6).
In the separating apparatus 42, as shown in fig. 13 (a), the stacked wafers T are transferred and placed on the mounting table 80. At this time, the support wafer S side (the surface Wa side of the processing wafer W) of the laminated wafer T is cooled by the refrigerant flowing through the refrigerant flow path 81. Thereafter, the 3 rd laser head 90 is moved above the processing wafer W, and the laser beam L is irradiated from the 3 rd laser head 90 to the inner surface modification layer M3. Then, the 3 rd laser head 90 is moved from the peripheral edge portion of the processed wafer W toward the center portion, that is, in the wafer plane, and irradiates the entire surface of the inner surface modification layer M3 with the laser beam L. Thereby, the inner surface modification layer M3 is heated. When the internal surface modification layer M3 is heated in this manner, a stress difference occurs between the back surface Wb side and the front surface Wa side of the processed wafer W. Further, the surface Wa side of the processed wafer W is cooled, and thus the stress difference becomes large. This facilitates separation of the back surface wafer Wb1 from the inner surface modification layer M3.
Then, as shown in fig. 13 (b), the back surface Wb of the processed wafer W is sucked and held by the suction cup 100. Then, the chuck 100 is rotated to cut the back surface wafer Wb1 with the inner surface modification layer M3 as a boundary. Then, as shown in fig. 13 (c), the suction cup 100 is lifted up while the suction cup 100 is sucking and holding the back surface wafer Wb1, and the back surface wafer Wb1 is separated from the processing wafer W. In addition, in the case where the rear surface wafer Wb1 can be separated only by raising the suction cup 100 as shown in fig. 13 (c), the rotation of the suction cup 100 shown in fig. 13 (b) may be omitted.
Next, the stacked wafer T is transported by the wafer transport device 32 to the grinding device 44. As shown in fig. 7 (f), the grinding device 44 grinds the back surface Wb (damaged surface) of the processed wafer W to remove the inner surface modified layer M3 and the peripheral edge modified layer M1 remaining on the back surface Wb (step A6 in fig. 6). Specifically, the back surface Wb is ground by rotating the processing wafer W and the grinding wheel, respectively, while the grinding wheel is in contact with the back surface Wb, and then lowering the grinding wheel. The back surface Wb may be cleaned after grinding in step A6 and before wet etching in step A7 described later. For example, a brush may be used for the cleaning treatment of the rear surface Wb, or a pressurized cleaning solution may be used.
Next, the laminated wafer T is transported by the wafer transport device 32 to the wet etching device 43. In the wet etching apparatus 43, a chemical solution is supplied to the back surface Wb (damaged surface) of the processing wafer W to perform wet etching (step A7 in fig. 6). A grinding trace may be formed on the rear surface Wb ground by the grinding device 44. In this step A7, grinding marks can be removed by performing wet etching, and the back surface Wb can be smoothed.
Thereafter, all the processed stacked wafers T are transported by the wafer transport device 32 to the transport device 34, and then transported by the wafer transport device 22 to the cassettes Ct of the cassette stage 10. Thus, the series of wafer processing by the wafer processing system 1 ends.
According to the above embodiment, after the internal surface modification layer M3 is formed inside the handle wafer W in step A4, the back surface wafer Wb1 is separated with the internal surface modification layer M3 as a base point in step A5. As disclosed in patent document 1, when grinding is performed on the rear surface Wb of the processed wafer W, the grinding wheel wears, and the waste liquid is required to be treated because a grinding liquid is used. In contrast, in the present embodiment, since the 1 st laser head 60 itself does not deteriorate with time, the number of consumable parts decreases, and therefore the maintenance frequency can be reduced. In addition, since the dry process using laser light is adopted, grinding fluid and wastewater treatment are not required. Therefore, the running cost can be reduced. Further, since the grinding fluid does not get around the support wafer S, contamination of the support wafer S can be suppressed.
In the present embodiment, the back surface Wb (damaged surface) is ground in step A6, but the grinding is only required to remove the inner surface modification layer M3 and the peripheral edge modification layer M1, and the grinding amount is small, which is about several tens μm. On the other hand, in the case of grinding the back surface Wb in order to thin the processed wafer W as in the prior art, the grinding amount is large, for example, 700 μm or more, and the degree of abrasion of the grinding wheel is large. Therefore, in the present embodiment, the maintenance frequency can still be reduced.
In addition, according to the present embodiment, in step A4, a plurality of laser beams L are simultaneously irradiated into the interior of the processing wafer W, thereby simultaneously forming a plurality of inner surface modification layers M3. Thus, the inner surface modification layer M3 can be efficiently formed on the entire inner surface of the processed wafer W, and the time required for the processing in step A4 can be reduced. As a result, the throughput of wafer processing can be improved.
In addition, according to the present embodiment, in step A5, the laser beam L is irradiated from the 3 rd laser head 90 to the inner surface modification layer M3, and the inner surface modification layer M3 is heated. Therefore, a stress difference occurs between the back surface Wb side and the front surface Wa side of the processed wafer W. Further, the surface Wa side of the processed wafer W is cooled, and thus the stress difference becomes large. As a result, the back surface wafer Wb1 can be easily separated from the inner surface modification layer M3. In the present embodiment, since the 3 rd laser head 90 is moved from the peripheral edge portion to the central portion of the processed wafer W, the stress acting on the inner surface modification layer M3 acts from the peripheral edge portion to the central portion. Therefore, the back surface wafer Wb1 is more easily separated.
In addition, according to the present embodiment, when edge trimming is performed, after the peripheral edge modification layer M1 is formed inside the processed wafer W in step A1, the peripheral edge We is removed in step A3 with the peripheral edge modification layer M1 as a base point. For example, in the method disclosed in patent document 1, the peripheral edge We is ground or cut, and the grinding wheel wears out and needs to be replaced periodically. In contrast, in the present embodiment, the 1 st laser head 60 itself is degraded to a small extent with the passage of time, and the maintenance frequency can be reduced.
However, the present disclosure does not exclude edge finishing with grinding.
In addition, according to the present embodiment, since the division modification layer M2 is formed in step A2, the peripheral edge portion We removed in step A3 can be made small. Thus, edge trimming can be performed more easily.
The formation of the peripheral edge modified layer M1 in step A1, the formation of the divided modified layer M2 in step A2, and the formation of the internal surface modified layer M3 in step A4 can be performed in the same modifying apparatus 40. Thus, the cost of the apparatus can be reduced. It is needless to say that the formation of the peripheral edge modification layer M1, the formation of the divided modification layer M2, and the formation of the internal surface modification layer M3 may be performed by different apparatuses. For example, in the case where the wafer processing is continuously performed on a plurality of laminated wafers T, the peripheral edge modification layer M1, the division modification layer M2, and the inner surface modification layer M3 are formed by different apparatuses, whereby the productivity of the wafer processing can be improved.
In addition, according to the present embodiment, in step A6, the rear surface Wb (damaged surface) is ground to remove the inner surface modification layer M3 and the peripheral edge modification layer M1, so that the yield of the processed wafer W as a product can be improved.
In the present embodiment, the processing procedure of steps A1 to A7 can be changed.
As modification 1, the order of removing the peripheral edge We of step A3 and forming the internal surface modification layer M3 of step A4 may be changed. In this case, the wafer processing is performed in the order of steps A1 to A2, A4, A3, A5 to A7.
As modification 2, the formation of the internal surface modification layer M3 in step A4 may be performed before the formation of the peripheral modification layer M1 in step A1. In this case, wafer processing is performed in the order of steps A4, A1 to A3, and A5 to A7.
Next, another embodiment of forming the internal surface modification layer M3 in the process wafer W will be described.
As shown in fig. 14, a modification apparatus 200 according to another embodiment is a modification apparatus 40 shown in fig. 4, in which the structure of the laser irradiation unit is changed. That is, the reforming apparatus 200 includes, as laser irradiation units, a4 th laser head 210 and a5 th laser head 220 in place of the 1 st laser head 60. In the reforming apparatus 40, a plurality of laser beams L are irradiated from the 1 st laser head 60, whereas in the reforming apparatus 200, the laser beams L are irradiated from the 4 th laser head 210 and the 5 th laser head 220, respectively. Other structures of the reformer 200 are the same as those of the reformer 40.
The 4 th laser head 210 and the 5 th laser head 220 are respectively disposed above the chuck 50. The 4 th laser head 210 and the 5 th laser head 220 converge and irradiate a high-frequency pulse laser beam L oscillated from a laser oscillator (not shown) at a predetermined position inside the processing wafer W with respect to the laser beam L having a wavelength having transmissivity with respect to the processing wafer W. Thus, the portions where the laser beams L are condensed inside the processing wafer W are modified, and internal surface modification layers M4 and M5 described later are formed.
The 4 th laser head 210 is configured to be movable in the X-axis direction and the Y-axis direction by a moving portion 211. The moving unit 211 is constituted by a usual precision XY stage. The 4 th laser head 210 is movable in the Z-axis direction by the elevating section 212. The 5 th laser head 220 is also configured to be movable in the X-axis direction and the Y-axis direction by a moving unit 221, and is configured to be movable in the Z-axis direction by a lifting unit 222.
In the above reforming apparatus 200, as shown in fig. 15, the 4 th laser head 210 is disposed at the upper center portion of the processed wafer W, and the 5 th laser head 220 is disposed at the upper peripheral portion of the processed wafer W. That is, the laser heads 210 and 220 are disposed at different positions in the radial direction of the processing wafer W. Then, as shown in fig. 15 and fig. 16 (a), the laser beam L is irradiated from the 4 th laser head 210 into the processing wafer W to form an internal surface modification layer M4. Further, the laser beam L is irradiated from the 5 th laser head 220 into the processing wafer W to form an internal surface modification layer M5. Then, the laser heads 210 and 220 and the laminated wafer T are relatively moved, and the inner surface modification layers M4 and M5 are formed in the central portion Wc of the handle wafer W.
Specifically, first, as shown in fig. 16 b, the laser heads 210 and 220 irradiate laser beams into the process wafers W, respectively, and rotate the process wafers W (laminated wafers T) 360 degrees. Thus, annular inner surface modification layers M4 and M5 are simultaneously formed in the process wafer W (spin process). Thereafter, as shown in fig. 16 b, the laser heads 210 and 220 are biased in the X-axis direction (radial direction) (moving step). In this moving step, the direction in which the laser heads 210 and 220 are biased may be from the outside to the inside as in the illustrated example, or may be from the inside to the outside. Then, as shown in fig. 16 (c), the laser heads 210 and 220 irradiate laser beams into the processing wafers W, respectively, and rotate the laminated wafer T by 360 degrees. Then, the other annular inner surface modification layers M4 and M5 are formed inside the processing wafer W, respectively. In this way, the formation of the annular inner surface modification layers M4 and M5 (rotation step) and the movement of the laser heads 210 and 220 in the X-axis direction (movement step) are repeated, and the inner surface modification layers M4 and M5 are formed over the entire inner surface of the central portion Wc.
In the example of fig. 16, the formation of the annular inner surface modification layers M4 and M5 (rotation step) and the movement of the laser heads 210 and 220 in the X-axis direction (movement step) are separately performed, but these steps may be performed simultaneously. That is, as shown in fig. 17, the laser heads 210 and 220 irradiate laser beams into the processing wafer W, respectively. At this time, the laser heads 210 and 220 are moved in the radial direction while rotating the processing wafer W. Thus, the inner surface modification layers M4 and M5 are formed in a spiral shape.
As described above, the same effects as those of the above embodiments can be obtained in both the case of forming the annular internal surface modification layers M4 and M5 and the case of forming the spiral internal surface modification layers M4 and M5. That is, the inner surface modification layers M4 and M5 can be efficiently formed on the entire inner surface of the processed wafer W, and the productivity of wafer processing can be improved.
Further, according to the present embodiment, since two laser heads 210, 220 are used, the movement in the radial direction of each laser head 210, 220 is reduced. For example, when one laser head is moved in the radial direction, it is necessary to move the laser heads by an amount corresponding to the diameter of the processed wafer W, whereas in the present embodiment, the movement of each laser head 210, 220 in the radial direction is, for example, about 1/4 of the diameter of the processed wafer W. As a result, the floor space of the reformer 200 can be reduced, and the reformer 200 can be miniaturized.
In addition, according to the present embodiment, since the inner surface modification layers M4 and M5 are formed in a ring shape or a spiral shape in step A4, when the rear surface wafer Wb1 is separated in step A5, stress applied in the circumferential direction is equalized, and separation can be performed more easily.
In the present embodiment, the 4 th laser head 210 and the 5 th laser head 220 are disposed at different positions in the radial direction, and the rotational speeds of the processed wafers W are different at the positions. Then, when the interval between the internal surface modification layers M4 and M5 is set to be the same, the frequencies of the laser beams L irradiated from the 4 th laser head 210 and the 5 th laser head 220 are adjusted. Specifically, if the frequency of the laser beam L from the 4 th laser head 210 is reduced and the frequency of the laser beam L from the 5 th laser head 220 is increased, the interval between the inner surface modification layers M4 and M5 can be made the same. By making the intervals uniform in this way, the inner surface modification layers M4 and M5 can be uniformly formed on the wafer surface, and then the rear surface wafer Wb1 can be easily separated.
In the modifying apparatus 200, the internal surface modifying layer can be formed by other methods. For example, as shown in fig. 18, the processing wafer W is divided into two areas W1, W2. The 4 th laser head 210 is arranged in the area W1, and the 5 th laser head 220 is arranged in the area W2. In the region W1, the 4 th laser head 210 is moved in the X-axis direction to form a row of the inner surface modification layers M6. Then, the 4 th laser head 210 is biased in the Y-axis direction, and the 4 th laser head 210 is moved in the X-axis direction, thereby forming another row of the inner surface modification layer M6. Thereby, the inner surface modification layer M6 is formed over the entire inner surface of the region W1. In the same manner as in the region W2, the inner surface modification layer M7 is formed over the entire inner surface of the region W2 using the 5 th laser head 220. As described above, in the present embodiment, the inner surface modification layers M6 and M7 can be formed simultaneously in the regions W1 and W2, respectively. Thus, the same effects as those of the above embodiment can be enjoyed.
The number of areas dividing the processing wafer W is not limited to the above embodiment. As shown in fig. 19, the processing wafer W may be divided into 3 areas W1 to W3. In this case, it is preferable that the reforming apparatus 200 is provided with another laser head for forming the inner surface reforming layer in addition to the laser heads 210 and 220. Further, by disposing one laser head in each of the zones W1 to W3, the inner surface modification layers M8, M9, M10 can be formed simultaneously in the zones W1, W2, W3, respectively. In other words, the larger the number of divided processing wafers W, the shorter the time for forming the internal surface modification layer, and the higher the throughput of wafer processing.
As shown in fig. 20, the processing wafer W may be divided into 4 areas W1 to W4. Each of the areas W1 to W4 is divided by the center line of the processing wafer W, that is, divided into a fan shape having the center of the processing wafer W as the apex. In this case, for example, the 4 th laser head 210 is disposed in the area W1, and the 5 th laser head 220 is disposed in the area W3. Then, the inner surface modification layers M11, M12 are simultaneously formed in the regions W1, W3, respectively. Thereafter, the process wafer W is rotated by 90 degrees. Thus, the 4 th laser head 210 is arranged in the area W2, and the 5 th laser head 220 is arranged in the area W4. Then, the inner face modification layer is formed simultaneously in the regions W2, W4, respectively.
The number of the sectors dividing the processing wafer W in the sector shape as described above is not limited to the above embodiment. The processing wafer W may be rotated according to the number of zones and the number of laser heads.
As shown in fig. 20, the modifying apparatus 40 may be used when dividing the processing wafer W into the fan-shaped areas W1 to W4. In this case, the 1 st laser head 60 can be moved to the zones W1 to W4 in sequence, and the internal surface modification layer can be formed in each of the zones W1 to W4.
In the above reforming apparatus 200, the laser heads 210 and 220 for forming the inner surface reforming layer are provided independently of the laser head 70 for forming the peripheral reforming layer and the divided reforming layer, but may be used in common. For example, the 5 th laser head 220 may be used to form a peripheral modified layer and a split modified layer. Alternatively, for example, the 2 nd laser head 70 may be used to form the inner surface modification layer.
Next, another embodiment of the separation device 42 will be described.
As shown in fig. 21, a separator 300 according to another embodiment is a separator in which the structure of a heating mechanism is changed from the structure of the separator 42 shown in fig. 5. That is, the separating apparatus 300 has an infrared irradiation section 310 instead of the 3 rd laser head 90 as a heating means. The infrared irradiation unit 310 is provided above the mounting table 80. The infrared irradiation unit 310 irradiates the entire surface of the inner surface modification layer M3 with infrared rays R, and heats the inner surface modification layer M3. The other structure of the separator 300 is the same as that of the separator 42.
In the present embodiment, the same effects as those of the above embodiment can be enjoyed. That is, by heating the inner surface modification layer M3, a stress difference is generated between the back surface Wb side and the front surface Wa side of the processed wafer W, and the back surface wafer Wb1 can be easily separated. The infrared irradiation unit 310 may be moved in the horizontal direction by a moving mechanism (not shown), and may irradiate the entire surface of the inner surface modification layer M3 with the infrared ray R.
As shown in fig. 22, a separator 320 according to another embodiment is configured by changing the configuration of a cooling mechanism from the configuration of the separator 42 shown in fig. 5. That is, the separating device 320 includes a wafer holding portion 330 and an air supply portion 331 in place of the mounting table 80. The wafer holding portion 330 holds the outer peripheral portion of the laminated wafer T (support wafer S). The air supply unit 331 supplies air to the laminated wafer T held by the wafer holding unit 330, and cools the support wafer S side (the surface Wa side of the processing wafer W) of the laminated wafer T. The other structure of the separation device 320 is the same as that of the separation device 42.
In the present embodiment, the same effects as those of the above embodiment can be enjoyed. That is, by cooling the front surface Wa side of the processed wafer W, the stress difference generated between the back surface Wb side and the front surface Wa side of the processed wafer W can be increased.
Next, wafer processing according to another embodiment performed by the wafer processing system 1 will be described. Fig. 23 is a flowchart showing main steps of wafer processing. In this embodiment, the same processing as that of the embodiment shown in fig. 6 will not be described in detail.
First, as shown in fig. 24 (a), a cassette Ct containing a plurality of stacked wafers T is placed on the cassette stage 10 of the in-and-out station 2.
Next, the stacked wafers T in the cassette Ct are taken out by the wafer transfer device 22, and transferred to the transfer device 34. Next, the stacked wafers T of the transfer device 34 are taken out by the wafer transfer device 32, and transferred to the modifying device 40. As shown in fig. 24B, the peripheral edge modification layer M13 is formed inside the processed wafer W in the modification device 40 (step B1 in fig. 23).
In the reformer 40, as shown in fig. 25, the 2 nd laser head 70 is moved above the processed wafer W, and is a boundary between the peripheral edge We and the central portion Wc of the processed wafer W. Then, the chuck 50 is rotated by the rotating unit 52, and the laser beam L is irradiated from the 2 nd laser head 70 into the processing wafer W. Then, the annular peripheral edge modified layer M13 is formed along the boundary between the peripheral edge We and the central portion Wc.
As in the case of the peripheral edge modified layer M1 of the above embodiment, the peripheral edge modified layer M13 extends in the thickness direction, and the lower end of the peripheral edge modified layer M13 is located above the target surface (the broken line in fig. 25) of the processed wafer W after grinding. The peripheral edge modification layer M13 is formed to have the same height as the internal surface modification layer M14 described later.
However, in the peripheral edge modified layer M1 shown in fig. 7, the crack C1 progresses to the front face Wa and the back face Wb, whereas the crack C13 from the peripheral edge modified layer M13 progresses only to the front face Wa and does not reach the back face Wb.
Next, as shown in fig. 24 (c), the interior surface modification layer M14 is formed in the interior of the processed wafer W in the modification device 40 (step B2 in fig. 23). As in the case of the internal surface modification layer M3 shown in fig. 7, the internal surface modification layer M14 extends in the surface direction of the processing wafer W. The inner surface modification layer M14 is formed to have the same height as the peripheral edge modification layer M13, and the lower end of the inner surface modification layer M14 is located above the target surface of the processed wafer W after grinding. The plurality of inner surface modification layers M14 are formed in the planar direction, and the plurality of inner surface modification layers M14 are formed from the central portion to the peripheral modification layer M13, that is, formed at the central portion Wc in the planar direction. The method for forming the internal surface modification layer M14 is the same as the method for forming the internal surface modification layer M3 in step A4. In addition, the crack C14 progresses in the face direction from the inner face modification layer M14. In addition, in the case where the pitch of the inner surface modification layer M14 is small, the crack C14 may be absent.
Next, the stacked wafer T is transported by the wafer transport device 32 to the separating device 42. As shown in fig. 24 d, the separating apparatus 42 separates a portion of the processed wafer W on the rear surface Wb side (hereinafter referred to as a rear surface wafer Wb 2) from the inner surface modification layer M14 and the peripheral edge modification layer M13 as the base points (step B3 in fig. 23). At this time, since the inner surface modification layer M14 and the peripheral edge modification layer M13 are formed to have the same height, the rear surface wafer Wb2 is separated integrally with the peripheral edge We. The method for separating the back surface wafer Wb2 is the same as the method for separating the back surface wafer Wb1 in step A5.
Next, the stacked wafer T is transported by the wafer transport device 32 to the grinding device 44. As shown in fig. 24 (e), the grinding device 44 grinds the back surface Wb (damaged surface) of the processed wafer W to remove the inner surface modified layer M14 and the peripheral edge modified layer M13 remaining on the back surface Wb (step B4 in fig. 23). The method for grinding the back surface Wb is the same as the method for grinding the back surface Wb in step A6.
Next, the laminated wafer T is transported by the wafer transport device 32 to the wet etching device 43. In the wet etching device 43, a chemical solution is supplied to the back surface Wb (damaged surface) of the processing wafer W, and wet etching is performed (step B5 in fig. 23). The wet etching method of the back surface Wb is the same as the wet etching method of the back surface Wb in the step A7.
Thereafter, all the processed stacked wafers T are transported by the wafer transport device 32 to the transport device 34, and then transported by the wafer transport device 22 to the cassettes Ct of the cassette stage 10. Thus, the series of wafer processing by the wafer processing system 1 ends.
In the above embodiment, the same effects as those of the above embodiment can be enjoyed. In the present embodiment, the diameter of the back surface wafer Wb2 is unchanged from the diameter of the processed wafer W before processing, so that the back surface wafer Wb2 can be reused. The wafer processing system 1 may further include a recovery unit for recovering the separated back surface wafer Wb2 and a cleaning unit for cleaning the back surface wafer Wb2. In addition to the recovery and cleaning of the back surface wafer Wb2, the back surface wafer Wb2 may be ground, and in this case, a grinding section may be provided in the wafer processing system 1. In addition, the back surface wafer Wb2 may be wet etched, and in this case, a wet etching portion may be provided in the wafer processing system 1.
In the present embodiment, the processing procedure of steps B1 to B5 can be changed. As a modification, the order of forming the peripheral edge modification layer M13 in step B1 and forming the internal surface modification layer M14 in step B2 may be changed. In this case, the wafer processing is performed in the order of steps B2, B1, B3 to B5.
Next, wafer processing according to another embodiment performed by the wafer processing system 1 will be described. The present embodiment is substantially the same as the embodiment shown in fig. 24, but the internal surface modification layer formed in step B2 is different.
In step B2, as shown in fig. 26 (c), an internal surface modification layer M15 is formed inside the handle wafer W. The inner surface modification layer M14 shown in fig. 24 is formed to the peripheral modification layer M13, whereas the inner surface modification layer M15 of the present embodiment is formed to extend from the center portion to the outer end portion in the plane direction. Further, the crack C15 progresses in the face direction from the inner face modification layer M15. In addition, in the case where the pitch of the inner surface modification layer M15 is small, the crack C15 may be absent.
In this case, in step B3, as shown in fig. 26 (d), the rear surface wafer Wb2 above the internal surface modification layer M15 and the peripheral edge We below the internal surface modification layer M15 are separated. That is, the back surface wafer Wb2 is separated from the inner surface modification layer M15 as a base point, and the peripheral edge portion We is separated from the peripheral edge modification layer M13 as a base point. The other steps B1, B4 to B5 are the same as those of the embodiment shown in fig. 24.
In the above embodiment, the same effects as those of the above embodiment can be enjoyed.
The wafer processing system 1 according to the above embodiment may have a CMP apparatus (CMP: chemical Mechanical Polishing, chemical mechanical polishing) instead of the wet etching apparatus 43. The CMP apparatus functions in the same manner as the wet etching apparatus 43. That is, in the CMP apparatus, the back surface Wb (damaged surface) ground in the grinding apparatus 44 is subjected to a grinding process. Then, the grinding marks formed on the rear surface Wb by the grinding device 44 are removed, and the rear surface Wb is smoothed.
As described above, the inner surface modification layer and the peripheral edge modification layer are removed by grinding the rear surface Wb in the grinding device 44. In this regard, in the case where the inner surface modifying layer and the peripheral modifying layer can be removed only by the wet etching device 43 or the CMP device, the grinding device 44 may be omitted. In addition, the back surface Wb (damaged surface) may be processed only by the grinding device 44, and in this case, the wet etching device 43 or the CMP device may be omitted.
In the wafer processing system 1, the bonding between the processed wafer W and the support wafer S is performed by a bonding device external to the wafer processing system 1, but the bonding device may be provided inside the wafer processing system 1. In this case, cassettes Cw, cs, ct capable of storing a plurality of processing wafers W, a plurality of support wafers S, and a plurality of stacked wafers T are fed and discharged to and from the feed/discharge station 2. The cassettes Cw, cs, ct are placed on the cassette placement stage 10 in a row along the Y axis direction.
In addition, when the oxide films Fw, fs are bonded to the peripheral edge We at the time of bonding the handle wafer W and the support wafer S, the oxide films Fw, fs may be pretreated before the bonding process. As the pretreatment, for example, the surface layers of the oxide films Fw, fs at the peripheral edge We may be removed, or the oxide films Fw, fs may be protruded. Alternatively, the surface of the oxide film Fw may be roughened. By performing such pretreatment, the oxide films Fw and Fs can be prevented from being bonded to the peripheral edge We, and the peripheral edge We can be properly removed.
In the case where the oxide film Fs is removed as the pretreatment described above, for example, the portion of the bonding surface Sj of the support wafer S corresponding to the peripheral edge We to be removed may be etched. Specifically, for example, the interface processing apparatus 400 shown in fig. 27 is used. The interface processing apparatus 400 is provided inside the wafer processing system 1 together with the above-described bonding apparatus (not shown), for example.
The interface processing apparatus 400 includes a chuck 401, and the chuck 401 holds the support wafer S with the surface Sa facing upward. The chuck 401 is rotatable about a vertical axis by a rotation mechanism 402.
A 1 st nozzle 403 as a 1 st liquid supply portion for supplying a 1 st etching liquid E1 and a 2 nd nozzle 404 as a 2 nd liquid supply portion for supplying a 2 nd etching liquid E2 to the surface Sa of the support wafer S are provided above the chuck 401. The nozzles 403 and 404 are respectively connected to etching liquid supply sources (not shown) for storing and supplying the etching liquids E1 and E2. The nozzles 403 and 404 may each be movable in the X-axis direction, the Y-axis direction, and the Z-axis direction by a moving mechanism (not shown).
The 1 st etching solution E1 etches the oxide film Fs formed on the surface Sa of the support wafer S. For example, HF (hydrogen fluoride) or the like is used as the 1 st etching liquid E1. The 2 nd etching liquid E2 etches silicon, which is the surface Sa supporting the wafer S. For example, TMAH (tetramethylammonium hydroxide), choline (Choline), KOH (potassium hydroxide), and the like are used as the 2 nd etching liquid E2.
In this case, as shown in fig. 28 (a), the oxide film Fs is formed on the surface Sa of the support wafer S fed to the interface processing apparatus 400. Then, as shown in fig. 28 (b), the 1 st etching liquid E1 is supplied from the 1 st nozzle 403 to the peripheral edge of the oxide film Fs while rotating the chuck 401, and the peripheral edge of the oxide film Fs is etched. In the present embodiment, the etched end portion of the oxide film Fs coincides with the position where the peripheral edge modification layer M1 to be described later is formed, that is, the end portion of the peripheral edge portion We to be removed.
Next, as shown in fig. 28 c, the 2 nd etching liquid E2 is supplied from the 2 nd nozzle 404 to the peripheral edge portion of the surface Sa supporting the wafer S while rotating the chuck 401, and the peripheral edge portion of the surface Sa (silicon portion) is etched. At this time, since the 2 nd etching solution E2 is TMAH, choline, KOH and the like described above, the oxide film Fs is etched not but by using the oxide film Fs as a mask to etch the surface Sa. In addition, the surface Sa is etched, for example, by several μm in the thickness direction.
Subsequently, the support wafer S and the processing wafer W subjected to the etching process are transported to a bonding apparatus (not shown). In the bonding apparatus, as shown in fig. 28 (d), the handle wafer W and the support wafer S are bonded to form a laminated wafer T. At this time, the processing wafer W and the support wafer S are not bonded to each other at the peripheral edge We.
Next, in the wafer processing system 1, for example, step A1 shown in fig. 6 is performed, and as shown in fig. 28 (d), a peripheral edge modified layer M1 is formed inside the processed wafer W. At this time, the position of the peripheral edge modification layer M1 coincides with the position of the end of the oxide film Fs.
Then, in the wafer processing system 1, for example, steps A2 and A3 shown in fig. 6 are sequentially performed, and after the division modification layer M2 is formed, the peripheral edge We is removed with the peripheral edge modification layer M1 and the crack C as the base points. When the peripheral edge We is removed, the processing wafer W and the support wafer S are not bonded, so that the peripheral edge We can be properly removed.
Here, for example, when the film thickness of the oxide film Fs is small, if only the oxide film Fs is etched, there is a possibility that the peripheral edge We will be in close contact with each other after the handle wafer W and the support wafer S are bonded. In this regard, in the present embodiment, since the oxide film Fs is etched and the surface Sa of the support wafer S is etched, the re-adhesion can be suppressed, and the unbonded area between the processing wafer W and the support wafer S can be maintained at the peripheral edge We. In addition, for example, when the film thickness of the oxide film Fs is sufficiently large, etching of the surface Sa may be omitted.
In the present embodiment, an alkaline liquid is used as the 2 nd etching liquid E2. In this case, when the surface Sa of the support wafer S is etched using the 2 nd etching liquid E2, the surface Sa is roughened. Thus, the bonding and re-adhesion between the processing wafer W and the support wafer S at the peripheral edge We can be more reliably suppressed.
In the present embodiment, the position of the end portion of the etched oxide film Fs is aligned with the position of the peripheral edge modification layer M1 as shown in fig. 28 (d), but the peripheral edge modification layer M1 may be formed at a position radially inward of the end portion of the oxide film Fs as shown in fig. 29. In other words, the etching of the oxide film Fs may be performed radially outward of the peripheral edge modification layer M1.
In this case, even if the peripheral edge modified layer M1 is formed offset from the end of the oxide film Fs due to, for example, processing errors or the like, the formation of the peripheral edge modified layer M1 on the outer side in the radial direction than the end of the oxide film Fs can be suppressed. Here, when the peripheral edge modification layer M1 is formed radially outward of the end portion of the oxide film Fs, the processed wafer W is in a state of floating on the support wafer S after the peripheral edge We is removed. In this regard, in the present embodiment, the state of the processed wafer W can be reliably suppressed.
Further, the inventors of the present disclosure have conducted intensive studies and have confirmed that the peripheral edge We can be properly removed when the distance G between the end of the oxide film Fs and the peripheral edge modification layer M1 is sufficiently small. The distance G is preferably 500 μm or less.
In the example of fig. 29, the peripheral edge modification layer M1 is formed on the inner side in the radial direction with respect to the end portion of the oxide film Fs, but the position of formation of the peripheral edge modification layer M1 can be applied to the case where other processing is performed as the pretreatment of the bonding processing. Examples of the pretreatment include removal of the surface layers of the oxide films Fw and Fs at the peripheral edge We, protrusion of the oxide films Fw and Fs, and roughening of the oxide film Fw by roughening of the surface. In any case, the peripheral edge modification layer M1 may be formed radially inward of the end of the interface between the handle wafer W and the support wafer S.
The method of removing the oxide films Fw, fs as the pretreatment is not limited to the etching described above, and the oxide films Fw, fs may be polished, for example. Specifically, for example, the interface processing device 410 shown in fig. 30 is used. The interface processing apparatus 410 is provided inside the wafer processing system 1, for example, in place of the interface processing apparatus 400.
The interface processing apparatus 410 includes a chuck 411, and the chuck 411 holds the processing wafer W with the oxide film Fw facing upward. The chuck 411 is rotatable about a vertical axis by a rotation mechanism 412.
A polishing member 413 is provided above the chuck 411, and the polishing member 413 is pressed against the peripheral edge portion of the oxide film Fw to remove the peripheral edge portion of the oxide film Fw. The polishing member 413 is configured to be movable in the Z-axis direction by a moving mechanism (not shown).
In this way, by removing the peripheral edge portion of the oxide film Fw using the polishing member 413, the processing wafer W and the support wafer S are not bonded to each other at the peripheral edge portion We, and the peripheral edge portion We can be properly removed in the subsequent processing. Further, since the damaged layer is formed on the surface of the oxide film Fw, the re-adhesion between the handle wafer W and the support wafer S can be suppressed, and the unbonded region can be maintained.
Further, since the surface grain size of the polishing member 413, that is, the abrasive grain diameter of the polishing member 413 can be arbitrarily selected, the film removal rate of the oxide film Fw and the surface roughness of the oxide film Fw after film removal can be arbitrarily adjusted. This can more appropriately suppress the re-adhesion of the non-joined region.
In the present embodiment, the oxide film Fw of the handle wafer W is polished, but the same process may be performed on the oxide film Fs of the support wafer S.
In the present embodiment, the non-bonded region is formed on the processing wafer W (or the supporting wafer S) before bonding, but the non-bonded region may be formed after bonding. For example, after bonding, the bonding strength may be lowered by irradiating the outer peripheral portion of the oxide film Fw with a laser beam, thereby forming an unbonded region.
In the wafer processing system 1 according to the above embodiment, the trimming can be performed in accordance with the notch of the processed wafer W.
In the above embodiment, the case where the handle wafer W and the support wafer S are directly bonded has been described, but the handle wafer W and the support wafer S may be bonded by an adhesive.
In the above embodiment, the case where the processed wafer W of the laminated wafer T is thinned has been described, but the above embodiment can be applied to the case where one wafer is thinned. The above embodiment can be applied also to the case of separating the laminated wafer T into the handle wafer W and the support wafer S. For example, the above embodiment can be applied also in a case where the object to be processed is an ingot and the substrate is made of the ingot.
The presently disclosed embodiments are considered in all respects to be illustrative and not restrictive. The above-described embodiments may be omitted, replaced, and modified in various forms without departing from the scope of the claims and the gist thereof.
Description of the reference numerals
1. A wafer processing system; 40. a modifying device; 42. a separation device; 51. a moving part; 52. a rotating part; 60. 1 st laser head; 61. a moving part; s, supporting a wafer; t, laminating wafers; w, processing the wafer.

Claims (7)

1. A processing system for processing a processing object, wherein,
the processing system has:
a modifying device that forms an internal surface modifying layer in a surface direction inside the processing object body, the processing object body including a 1 st processing object body and a 2 nd processing object body, the 2 nd processing object body being configured to support the 1 st processing object body; and
a separation device for separating the object to be processed with the internal surface modification layer as a base point,
the modifying device comprises:
a laser irradiation unit that irradiates the inside of the processing object with a plurality of laser beams; and
a moving mechanism for relatively moving the laser irradiation unit and the processing object,
The modifying device moves the plurality of laser beams from the laser irradiation part relative to the 1 st processing object by the moving mechanism, forms the internal surface modifying layer in the 1 st processing object,
the separation device separates the 1 st processing object body by taking the inner surface modification layer as a base point,
the processing system further includes an interface processing device that performs a predetermined process on an interface to be joined corresponding to a peripheral edge portion of the 1 st processing object before the 1 st processing object is joined to the 2 nd processing object, or performs a predetermined process on an interface corresponding to a peripheral edge portion of the 1 st processing object after the 1 st processing object is joined to the 2 nd processing object.
2. The processing system of claim 1, wherein,
the laser irradiation section has a laser head for peripheral edge modification, which irradiates another laser beam in the thickness direction along a boundary between the central portion of the processing object and the peripheral edge portion to be removed, thereby forming a peripheral edge modification layer.
3. The processing system of claim 1, wherein,
the separating device has a heating mechanism for heating the inner surface modification layer.
4. The processing system of claim 1, wherein,
the modifying means forms a peripheral modifying layer inside the 1 st processing object along a boundary between the peripheral portion and a central portion of the 1 st processing object at a position radially inward of a position corresponding to an end portion of the interface processed by the interface processing means.
5. A processing method for processing a processing target body, wherein,
the processing method comprises the following steps:
forming an internal surface modification layer in the process object body in a surface direction, the process object body including a 1 st process object body and a 2 nd process object body, the 2 nd process object body being for supporting the 1 st process object body; and
separating the object to be processed with the internal surface modification layer as a base point,
wherein, when forming the internal surface modification layer, the laser irradiation unit irradiates a plurality of laser beams into the processing object body, and the plurality of laser beams are moved relatively to the 1 st processing object body by a moving mechanism to form the internal surface modification layer in the 1 st processing object body,
Separating the 1 st processing object body by taking the inner surface modification layer as a base point,
the method may further include performing a predetermined process on an interface to be joined corresponding to a peripheral edge portion of the 1 st processing object before the 1 st processing object is joined to the 2 nd processing object, or performing a predetermined process on an interface corresponding to a peripheral edge portion of the 1 st processing object after the 1 st processing object is joined to the 2 nd processing object.
6. The process according to claim 5, wherein,
the laser irradiation part is provided with a laser head for modifying the periphery,
when forming the internal surface modification layer, another laser beam is irradiated from the peripheral edge modification laser head in the thickness direction along the boundary between the central portion of the processing object and the peripheral edge portion to be removed, thereby forming a peripheral edge modification layer.
7. The process according to claim 5, wherein,
when forming the internal surface modification layer, a peripheral surface modification layer is formed inside the 1 st processing object along a boundary between the peripheral edge portion and the central portion of the 1 st processing object at a position radially inward of a position corresponding to an end portion of the interface subjected to the predetermined process.
CN201980056207.1A 2018-09-13 2019-09-03 Processing system and processing method Active CN112638573B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018-171218 2018-09-13
JP2018171218 2018-09-13
PCT/JP2019/034563 WO2020054504A1 (en) 2018-09-13 2019-09-03 Processing system and processing method

Publications (2)

Publication Number Publication Date
CN112638573A CN112638573A (en) 2021-04-09
CN112638573B true CN112638573B (en) 2023-08-22

Family

ID=69777609

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201980056207.1A Active CN112638573B (en) 2018-09-13 2019-09-03 Processing system and processing method

Country Status (5)

Country Link
JP (1) JP7133633B2 (en)
KR (1) KR102629529B1 (en)
CN (1) CN112638573B (en)
TW (1) TWI816877B (en)
WO (1) WO2020054504A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202400339A (en) * 2018-10-30 2024-01-01 日商濱松赫德尼古斯股份有限公司 Laser machining device and laser machining method
JP7285067B2 (en) 2018-10-30 2023-06-01 浜松ホトニクス株式会社 LASER PROCESSING APPARATUS AND LASER PROCESSING METHOD
WO2020090894A1 (en) 2018-10-30 2020-05-07 浜松ホトニクス株式会社 Laser processing device and laser processing method
JP2022167037A (en) * 2021-04-22 2022-11-04 キオクシア株式会社 Semiconductor manufacturing device and method for manufacturing semiconductor device
CN116765593A (en) * 2021-11-24 2023-09-19 郭辉 Water jet laser rounding system of conductive SiC crystal ingot
CN114473188A (en) * 2022-03-28 2022-05-13 杭州乾晶半导体有限公司 Laser processing method and device for stripping wafer

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004111946A (en) * 2002-08-30 2004-04-08 Tokyo Seimitsu Co Ltd Laser dicing equipment and dicing method
JP2010247189A (en) * 2009-04-16 2010-11-04 Shin Etsu Polymer Co Ltd Method of manufacturing semiconductor wafer and apparatus therefor
JP2011224658A (en) * 2010-04-14 2011-11-10 Samsung Electronics Co Ltd Method of processing substrate using laser beam
JP2013049161A (en) * 2011-08-30 2013-03-14 Hamamatsu Photonics Kk Method of cutting workpiece
CN105637618A (en) * 2013-10-15 2016-06-01 三菱电机株式会社 Semiconductor-element manufacturing method and wafer mounting device
CN105821361A (en) * 2016-03-18 2016-08-03 中国科学院力学研究所 Method for adjusting movement track during copper-chromium alloy contact surface laser modification
JP2016139726A (en) * 2015-01-28 2016-08-04 株式会社東京精密 Laser dicing device
JP2017204626A (en) * 2016-05-06 2017-11-16 国立大学法人埼玉大学 Substrate processing method and substrate processing device
JP2018060872A (en) * 2016-10-03 2018-04-12 株式会社ディスコ Wafer processing method and polishing device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006108532A (en) * 2004-10-08 2006-04-20 Disco Abrasive Syst Ltd Method of grinding wafer
JP2012069736A (en) 2010-09-24 2012-04-05 Elpida Memory Inc Method of manufacturing semiconductor device
KR20130026810A (en) * 2011-09-06 2013-03-14 주식회사 이오테크닉스 Laser machining method
JP6078376B2 (en) * 2013-02-22 2017-02-08 株式会社ディスコ Wafer processing method

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004111946A (en) * 2002-08-30 2004-04-08 Tokyo Seimitsu Co Ltd Laser dicing equipment and dicing method
JP2010247189A (en) * 2009-04-16 2010-11-04 Shin Etsu Polymer Co Ltd Method of manufacturing semiconductor wafer and apparatus therefor
JP2011224658A (en) * 2010-04-14 2011-11-10 Samsung Electronics Co Ltd Method of processing substrate using laser beam
JP2013049161A (en) * 2011-08-30 2013-03-14 Hamamatsu Photonics Kk Method of cutting workpiece
CN105637618A (en) * 2013-10-15 2016-06-01 三菱电机株式会社 Semiconductor-element manufacturing method and wafer mounting device
JP2016139726A (en) * 2015-01-28 2016-08-04 株式会社東京精密 Laser dicing device
CN105821361A (en) * 2016-03-18 2016-08-03 中国科学院力学研究所 Method for adjusting movement track during copper-chromium alloy contact surface laser modification
JP2017204626A (en) * 2016-05-06 2017-11-16 国立大学法人埼玉大学 Substrate processing method and substrate processing device
JP2018060872A (en) * 2016-10-03 2018-04-12 株式会社ディスコ Wafer processing method and polishing device

Also Published As

Publication number Publication date
WO2020054504A1 (en) 2020-03-19
TW202025369A (en) 2020-07-01
KR20210044893A (en) 2021-04-23
TWI816877B (en) 2023-10-01
JPWO2020054504A1 (en) 2021-09-24
CN112638573A (en) 2021-04-09
JP7133633B2 (en) 2022-09-08
KR102629529B1 (en) 2024-01-25

Similar Documents

Publication Publication Date Title
CN112638573B (en) Processing system and processing method
TWI791095B (en) Substrate processing system, substrate processing method, and computer storage medium
JP7149393B2 (en) Substrate processing system and substrate processing method
JP7058738B2 (en) Board processing system and board processing method
JP7386075B2 (en) Substrate processing method and substrate processing system
JP7412131B2 (en) Substrate processing method and substrate processing system
JP7086201B2 (en) Board processing system and board processing method
JP7412161B2 (en) Substrate processing equipment and substrate processing method
TWI837149B (en) Substrate processing system and substrate processing method
TWI836786B (en) Substrate processing system, substrate processing method, and computer storage medium
CN114599479B (en) Substrate processing method and substrate processing system
KR20210143175A (en) Processing device and processing method

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant