JPH11284200A5 - - Google Patents

Info

Publication number
JPH11284200A5
JPH11284200A5 JP1998100644A JP10064498A JPH11284200A5 JP H11284200 A5 JPH11284200 A5 JP H11284200A5 JP 1998100644 A JP1998100644 A JP 1998100644A JP 10064498 A JP10064498 A JP 10064498A JP H11284200 A5 JPH11284200 A5 JP H11284200A5
Authority
JP
Japan
Prior art keywords
active layer
film
forming
insulating film
germanium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1998100644A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11284200A (ja
JP4115586B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP10064498A priority Critical patent/JP4115586B2/ja
Priority claimed from JP10064498A external-priority patent/JP4115586B2/ja
Priority to US09/275,423 priority patent/US6482684B1/en
Publication of JPH11284200A publication Critical patent/JPH11284200A/ja
Priority to US10/242,733 priority patent/US6737673B2/en
Publication of JPH11284200A5 publication Critical patent/JPH11284200A5/ja
Application granted granted Critical
Publication of JP4115586B2 publication Critical patent/JP4115586B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP10064498A 1998-03-27 1998-03-27 半導体装置の作製方法 Expired - Fee Related JP4115586B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP10064498A JP4115586B2 (ja) 1998-03-27 1998-03-27 半導体装置の作製方法
US09/275,423 US6482684B1 (en) 1998-03-27 1999-03-24 Method of manufacturing a TFT with Ge seeded amorphous Si layer
US10/242,733 US6737673B2 (en) 1998-03-27 2002-09-13 Transistor having source/drain with graded germanium concentration

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10064498A JP4115586B2 (ja) 1998-03-27 1998-03-27 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JPH11284200A JPH11284200A (ja) 1999-10-15
JPH11284200A5 true JPH11284200A5 (enExample) 2005-09-15
JP4115586B2 JP4115586B2 (ja) 2008-07-09

Family

ID=14279544

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10064498A Expired - Fee Related JP4115586B2 (ja) 1998-03-27 1998-03-27 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP4115586B2 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW444257B (en) * 1999-04-12 2001-07-01 Semiconductor Energy Lab Semiconductor device and method for fabricating the same

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