JPH11251540A - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法

Info

Publication number
JPH11251540A
JPH11251540A JP10045719A JP4571998A JPH11251540A JP H11251540 A JPH11251540 A JP H11251540A JP 10045719 A JP10045719 A JP 10045719A JP 4571998 A JP4571998 A JP 4571998A JP H11251540 A JPH11251540 A JP H11251540A
Authority
JP
Japan
Prior art keywords
film
groove
capacitor
forming
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10045719A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11251540A5 (enExample
Inventor
Masashi Takahashi
正志 高橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP10045719A priority Critical patent/JPH11251540A/ja
Priority to US09/216,883 priority patent/US6448132B2/en
Publication of JPH11251540A publication Critical patent/JPH11251540A/ja
Publication of JPH11251540A5 publication Critical patent/JPH11251540A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/041—Manufacture or treatment of capacitors having no potential barriers
    • H10D1/042—Manufacture or treatment of capacitors having no potential barriers using deposition processes to form electrode extensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Layout of the interconnection structure
    • H01L23/5283—Cross-sectional geometry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/642—Capacitive arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/716—Electrodes having non-planar surfaces, e.g. formed by texturisation having vertical extensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76804—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics by forming tapered via holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP10045719A 1998-02-26 1998-02-26 半導体装置およびその製造方法 Pending JPH11251540A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP10045719A JPH11251540A (ja) 1998-02-26 1998-02-26 半導体装置およびその製造方法
US09/216,883 US6448132B2 (en) 1998-02-26 1998-12-21 Semiconductor device having a lower electrode aperture that is larger than the photolithography resolution of the capacitor pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10045719A JPH11251540A (ja) 1998-02-26 1998-02-26 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JPH11251540A true JPH11251540A (ja) 1999-09-17
JPH11251540A5 JPH11251540A5 (enExample) 2005-08-11

Family

ID=12727169

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10045719A Pending JPH11251540A (ja) 1998-02-26 1998-02-26 半導体装置およびその製造方法

Country Status (2)

Country Link
US (1) US6448132B2 (enExample)
JP (1) JPH11251540A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006191025A (ja) * 2004-12-28 2006-07-20 Hynix Semiconductor Inc シリンダ構造のキャパシタを有する半導体メモリ装置の製造方法
US7247537B2 (en) 2003-08-18 2007-07-24 Samsung Electronics Co., Ltd. Semiconductor device including an improved capacitor and method for manufacturing the same
CN115241161A (zh) * 2022-08-01 2022-10-25 丰非芯(上海)科技有限公司 一种电容器的形成方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001308287A (ja) * 2000-04-26 2001-11-02 Sharp Corp 半導体装置、及びその製造方法
JP3993972B2 (ja) * 2000-08-25 2007-10-17 富士通株式会社 半導体装置の製造方法と半導体装置
CN1525553A (zh) * 2003-02-26 2004-09-01 ���µ�����ҵ��ʽ���� 半导体装置的制造方法
US9917027B2 (en) * 2015-12-30 2018-03-13 Globalfoundries Singapore Pte. Ltd. Integrated circuits with aluminum via structures and methods for fabricating the same

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5381365A (en) * 1990-01-26 1995-01-10 Mitsubishi Denki Kabushiki Kaisha Dynamic random access memory having stacked type capacitor and manufacturing method therefor
KR940009616B1 (ko) * 1991-09-09 1994-10-15 금성일렉트론 주식회사 홀 캐패시터 셀 및 그 제조방법
US5391511A (en) * 1992-02-19 1995-02-21 Micron Technology, Inc. Semiconductor processing method of producing an isolated polysilicon lined cavity and a method of forming a capacitor
US5208180A (en) * 1992-03-04 1993-05-04 Micron Technology, Inc. Method of forming a capacitor
US5238862A (en) * 1992-03-18 1993-08-24 Micron Technology, Inc. Method of forming a stacked capacitor with striated electrode
JP3172321B2 (ja) * 1993-04-26 2001-06-04 三洋電機株式会社 半導体記憶装置の製造方法
US5436188A (en) * 1994-04-26 1995-07-25 Industrial Technology Research Institute Dram cell process having elk horn shaped capacitor
JP2776331B2 (ja) * 1995-09-29 1998-07-16 日本電気株式会社 半導体装置およびその製造方法
US5683922A (en) * 1996-10-04 1997-11-04 United Microelectronics Corporation Method of fabricating a self-aligned contact
JP3466851B2 (ja) * 1997-01-20 2003-11-17 株式会社東芝 半導体装置及びその製造方法
US6104055A (en) * 1997-03-27 2000-08-15 Nec Corporation Semiconductor device with memory cell having a storage capacitor with a plurality of concentric storage electrodes formed in an insulating layer and fabrication method thereof
US6025277A (en) * 1997-05-07 2000-02-15 United Microelectronics Corp. Method and structure for preventing bonding pad peel back
US6043119A (en) * 1997-08-04 2000-03-28 Micron Technology, Inc. Method of making a capacitor
US6011286A (en) * 1997-10-31 2000-01-04 Texas Instruments Double stair-like capacitor structure for a DRAM cell
US6251742B1 (en) * 1999-01-04 2001-06-26 Vanguard International Semiconductor Corporation Method of manufacturing a cup-shape capacitor
US6294436B1 (en) * 1999-08-16 2001-09-25 Infineon Technologies Ag Method for fabrication of enlarged stacked capacitors using isotropic etching
TW429615B (en) * 1999-11-06 2001-04-11 United Microelectronics Corp Fabricating method for the capacitor of dynamic random access memory

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7247537B2 (en) 2003-08-18 2007-07-24 Samsung Electronics Co., Ltd. Semiconductor device including an improved capacitor and method for manufacturing the same
US7452769B2 (en) 2003-08-18 2008-11-18 Samsung Electronics Co., Ltd. Semiconductor device including an improved capacitor and method for manufacturing the same
US7732850B2 (en) 2003-08-18 2010-06-08 Samsung Electronics Co., Ltd. Semiconductor device including an improved capacitor and method for manufacturing the same
JP2006191025A (ja) * 2004-12-28 2006-07-20 Hynix Semiconductor Inc シリンダ構造のキャパシタを有する半導体メモリ装置の製造方法
CN115241161A (zh) * 2022-08-01 2022-10-25 丰非芯(上海)科技有限公司 一种电容器的形成方法

Also Published As

Publication number Publication date
US6448132B2 (en) 2002-09-10
US20010054731A1 (en) 2001-12-27

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