JPH1124285A - レジスト用現像液 - Google Patents
レジスト用現像液Info
- Publication number
- JPH1124285A JPH1124285A JP17211597A JP17211597A JPH1124285A JP H1124285 A JPH1124285 A JP H1124285A JP 17211597 A JP17211597 A JP 17211597A JP 17211597 A JP17211597 A JP 17211597A JP H1124285 A JPH1124285 A JP H1124285A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- developing solution
- developer
- block copolymer
- ethylene oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/322—Aqueous alkaline compositions
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17211597A JPH1124285A (ja) | 1997-06-27 | 1997-06-27 | レジスト用現像液 |
PCT/JP1998/002667 WO1999000707A1 (fr) | 1997-06-27 | 1998-06-17 | Revelateur pour agents de reserve |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17211597A JPH1124285A (ja) | 1997-06-27 | 1997-06-27 | レジスト用現像液 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH1124285A true JPH1124285A (ja) | 1999-01-29 |
Family
ID=15935841
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17211597A Pending JPH1124285A (ja) | 1997-06-27 | 1997-06-27 | レジスト用現像液 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPH1124285A (fr) |
WO (1) | WO1999000707A1 (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006115013A1 (fr) * | 2005-04-22 | 2006-11-02 | Tokyo Ohka Kogyo Co., Ltd. | Composition de revelateur, procede pour la fabriquer et procede de formation d'un motif de resist |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001107081A (ja) | 1999-10-06 | 2001-04-17 | Mitsubishi Electric Corp | 半導体装置用洗浄剤および半導体装置の製造方法 |
JP2002351094A (ja) * | 2001-05-22 | 2002-12-04 | Fuji Photo Film Co Ltd | 現像液組成物及び画像形成方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60111246A (ja) * | 1983-11-21 | 1985-06-17 | Fuji Photo Film Co Ltd | 感光性平版印刷版の現像液 |
JPS61167948A (ja) * | 1985-01-21 | 1986-07-29 | Mitsubishi Chem Ind Ltd | ポジ型感光性組成物用現像液 |
JPH01129250A (ja) * | 1987-11-16 | 1989-05-22 | Tama Kagaku Kogyo Kk | ポジ型フォトレジスト用現像液 |
JP2543742B2 (ja) * | 1988-04-07 | 1996-10-16 | 富士写真フイルム株式会社 | ポジ型フオトレジスト用現像液 |
JP2915167B2 (ja) * | 1991-05-23 | 1999-07-05 | 株式会社トクヤマ | ホトレジスト用現像液 |
JPH06332195A (ja) * | 1993-05-19 | 1994-12-02 | Fuji Photo Film Co Ltd | 画像形成方法 |
JP2937801B2 (ja) * | 1994-03-31 | 1999-08-23 | 東京応化工業株式会社 | レジスト用現像原液 |
-
1997
- 1997-06-27 JP JP17211597A patent/JPH1124285A/ja active Pending
-
1998
- 1998-06-17 WO PCT/JP1998/002667 patent/WO1999000707A1/fr active Application Filing
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006115013A1 (fr) * | 2005-04-22 | 2006-11-02 | Tokyo Ohka Kogyo Co., Ltd. | Composition de revelateur, procede pour la fabriquer et procede de formation d'un motif de resist |
KR100899320B1 (ko) | 2005-04-22 | 2009-05-26 | 도오꾜오까고오교 가부시끼가이샤 | 현상액 조성물 및 그 제조 방법, 그리고 레지스트 패턴의형성 방법 |
Also Published As
Publication number | Publication date |
---|---|
WO1999000707A1 (fr) | 1999-01-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI254194B (en) | The aqueous solution of surfactant for developing the coating layer | |
KR100707838B1 (ko) | 수용성 수지 조성물 및 이로 이루어진 미세 패턴 형성 재료 | |
KR100932087B1 (ko) | 리소그래피용 린스액 및 이를 사용한 레지스트 패턴의형성방법 | |
TWI417682B (zh) | 微細化圖案之形成方法及用於它之光阻基板處理液 | |
JPH0451020B2 (fr) | ||
US20080044759A1 (en) | Fine Pattern Forming Material, Method Of Forming Fine Resist Pattern And Electronic Device | |
KR20040030253A (ko) | 계면활성제를 함유하는 공정액 | |
JP4679997B2 (ja) | 微細パターン形成方法 | |
JPH0638159B2 (ja) | ポジ型ホトレジスト用現像液 | |
KR20010022557A (ko) | 반사 방지 코팅용 조성물 | |
TW583517B (en) | Surface treatment process for chemically amplified resist and the material thereof | |
KR101340863B1 (ko) | 레지스트 기판용 처리액과 이를 사용한 레지스트 기판의 처리방법 | |
US6136505A (en) | Liquid coating composition for use in forming antireflective film and photoresist material using said antireflective film | |
JPS58150948A (ja) | 感光性組成物 | |
JP4531726B2 (ja) | 微細化されたレジストパターンの形成方法 | |
EP0394353A1 (fr) | Solution de developpement aqueuse et son utilisation dans le developpement d'une composition d'agent de reserve a exposition positive | |
KR20090079242A (ko) | 현상 완료 레지스트 기판 처리액과 이를 사용한 레지스트 기판의 처리 방법 | |
JPH1124285A (ja) | レジスト用現像液 | |
JP2001159824A (ja) | ディフェクトの発生を抑えたホトレジストパターンの形成方法およびディフェクト低減用現像液 | |
KR20140101156A (ko) | 신너 조성물 및 이의 용도 | |
JP2527172B2 (ja) | ポジ型ホトレジスト用現像液 | |
JPH0567028B2 (fr) | ||
WO2001022170A1 (fr) | Procede de formation d'un motif de resist presentant une resistance amelioree a la gravure seche | |
JPH04328747A (ja) | 均一にコートされたフォトレジスト組成物 | |
JPS6232451A (ja) | 改良ポジ型ホトレジスト用現像液 |