JPH11204025A - Resist development apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To efficiently remove a solvent component of a developing liquid or rinse liquid in a paste membrane by heating with a heating furnace having a panel-shaped red-infrared radiation part after removing the developing liquid or rinse liquid. SOLUTION: At a developing part 110, a processing substrate 180 is placed on a roll (rotating roll) 150 with a resist facing upward, and a developing liquid is sprayed onto the resist face by stray for developing. At a rinse part 120, a processing substrate 180 is placed on the roll 150 with the resist facing upward, and a rinse liquid is sprayed onto the resist face by spray for rinsing. At an air knife part 130, the processing substrate 180 is placed on the roll 150, and a high-pressure air 135 is blown to an air nozzle 133 for liquid cutting process. At a drying furnace 140, the processing substrate 180 is placed on the roll 150, red-infrared rays are irradiated with the processing substrate 180 over the resist face by means of a panel heater 143, and the resist part and a bulkhead forming paste membrane are dried.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] The present invention relates to a paste film,
The present invention relates to a development processing apparatus for performing patterning of a resist, and particularly to a substrate for a plasma display panel,
The present invention relates to a developing apparatus for patterning a resist on a paste film for forming a barrier portion, an electrode portion, and the like.

[0002]

2. Description of the Related Art In recent years, plasma display panels (hereinafter, also referred to as PDPs) have been used in various display devices because of their small depth, light weight, clear display, and wide viewing angle compared to liquid crystal panels. It is being used.
For example, an AC type PDP has a structure as shown in FIG. 6, for example, and has two opposing glass substrates 610, 6
20 is provided with a pair of regularly arranged metal electrodes 650 as bus electrodes and a composite electrode composed of a transparent electrode 640 and an address 680, between which a gas mainly composed of neon, xenon, or the like is sealed. I have. And
By applying a voltage between these electrodes and generating a discharge in minute cells around the electrodes, each cell emits light to perform display. Although FIG. 6 is a perspective view of the PDP structure, a front plate (glass substrate 6) is shown for easy understanding.
10) and the rear plate (glass substrate 620) are shown apart from the actual state. Further, the DC type PDP is different from the AC type in that the electrodes have a structure not coated with a dielectric layer, but the discharge effect is the same. 6 has a structure in which a base layer 667 is provided on one surface of a glass substrate 620 and a dielectric layer 665 is provided thereon, but the base layer 667 and the dielectric layer 665 are not necessarily required. .

[0003] Plasma display (PDP)
In the case of the AC type, for example, as shown in FIG. 5, a back plate and a front plate are manufactured in separate steps, and a PDP is assembled using both. Below, PD
The process of manufacturing the back plate and front plate for P will be briefly described. First, the manufacturing process of the back plate will be described. First, a glass substrate is prepared (S511), and a paste for a cathode (for electrode wiring) is printed in a predetermined pattern on the glass substrate by a thick film printing method, and the paste is dried and fired to form electrode wiring. (S5
12) Next, a barrier (also referred to as a barrier rib) is formed on the electrode wiring formation side of the glass substrate by a printing method or a sandblast method. (S513) In the case of a printing method, a barrier (barrier rib) forming paste is printed in a predetermined pattern on a glass substrate by a thick film printing method.
This is dried. The thickness of the barrier is large (for example, 160-2
(Thickness of 00 μm) Since this film thickness cannot be obtained by one thick film printing, printing and drying of the barrier forming paste are performed a plurality of times. After a predetermined film thickness is obtained, the paste is fired. In the case of the sand blast method, a barrier forming material is applied on a glass substrate, and a predetermined resist pattern is further formed thereon. Then, abrasive sand is sprayed to process the barrier forming material into a shape corresponding to the resist pattern. Is fired to form a barrier. Further, a paste for a phosphor (for example, a paste for a phosphor containing indium oxide) is printed in a predetermined pattern on the substrate on which the barrier is formed by a thick film printing method, and then dried and fired (S514). Form a faceplate. (S515)

[0004] Next, a process for manufacturing the front plate will be described. First, a glass substrate is prepared (S521), and an evaporation layer of, for example, ITO (Indium Tin Oxide) is patterned on the glass substrate. (S521) The patterning is performed by a normal photolithography process (lithography technology). Next, three layers of Cr-Cu-Cr (chromium, copper, chromium) are formed by vapor deposition or sputtering (S522), and similarly patterned by a photolithography process (lithographic technique), or a paste for electrode wiring is applied in a predetermined manner. An electrode wiring for electric discharge is formed together with the patterned ITO film by printing with a pattern. (S523) Next, a transparent dielectric layer is formed by solid printing of paste-like low melting point glass (S524), and a front plate is obtained. (S525)

[0005] The formation of the barrier using the sandblasting method on the back plate for PDP is usually performed as shown in FIG. This will be briefly described below. First, a paste 440 for forming a barrier is applied on the dielectric layer 430 of the substrate 415 (FIG. 4A) in which the electrode wiring 420 and the dielectric layer 430 are formed on the glass substrate 410, and dried.
(FIG. 4B) Next, a resist 450 is formed on the paste 440 (FIG. 4C), and the resist 450 is exposed to light using a predetermined mask, developed, and patterned into a predetermined pattern.
(FIG. 4 (d)) Normally, in forming the resist 450 (FIG. 4 (c)), a commercially available dry film resist in which a resist is formed on a base film and covered with a cover film is used. A method of removing the cover film and laminating the resist portion together with the base film on the paste side of the processing substrate is advantageously employed from the viewpoint of workability. The development is performed with the base film removed. Next, a rinsing process, a draining process using an air knife or the like, and a drying process are sequentially performed to form a patterned resist 450.
4 is used as a mask to perform a sand blasting process of cutting the paste 440 by blowing abrasive sand 460 (FIG. 4).
(E)) processing the paste for forming the barrier into a shape corresponding to the pattern of the resist 450; (FIG. 4F) Next, after removing the resist 450, the paste is baked to form the barrier 470. (FIG. 4 (g)) Incidentally, in forming not only barriers but also electrode wirings and the like, machines for developing resist on a paste film are increasing.

However, in the drying process following the liquid removal process using an air knife or the like after developing the resist,
Drying with hot air has been performed, but the solvent oozing into the paste film has not been sufficiently removed, resulting in pattern deficiency due to resist swelling, which has been a major quality problem. In order to cope with this, heating with a coil heater or the like was also attempted, but it was not possible to efficiently remove the solvent in the paste portion under the resist film, resulting in a large device. was there.

[0007]

As described above, the PDP
In the development on the paste film of the barrier of the back plate for
There has been a demand for an apparatus capable of sufficiently performing drying in the development processing step. The present invention relates to a developing apparatus for patterning a resist on a paste film for forming a barrier portion, an electrode portion and the like of a substrate for a plasma display panel (PDP). Another object of the present invention is to provide a developing apparatus which can efficiently remove a solvent of a developing solution or a rinsing solution that has permeated into a paste film and can sufficiently cope with the quality.

[0008]

According to the present invention, there is provided a resist developing apparatus for patterning a resist on a paste film for forming a barrier portion, an electrode portion and the like of a substrate for a plasma display panel (PDP). A heating apparatus for removing the developer and the rinsing liquid solvent that has permeated into the paste film after a liquid removing step in which the developing liquid and the rinsing liquid are removed by an air knife or the like. A furnace is provided, wherein the heating furnace has a panel-shaped infrared radiating section and performs heating by infrared rays. Further, in the above, the developing section for developing, the rinsing section for rinsing, the liquid removing step section, and the drying furnace are arranged in this order, and the processing substrate is placed on the rollers and transported at a predetermined speed. Is performed. Further, the above-mentioned resist is characterized by using a dry film resist.

[0009]

According to the resist developing apparatus of the present invention having such a structure, in the drying processing following the liquid removal processing using an air knife or the like after developing the resist,
It is possible to sufficiently remove the water that has permeated into the paste film, and it is possible to significantly reduce the defect of the barrier due to the swelling of the resist due to the residual water permeated into the paste film. At the same time, it was possible to reduce the size of the device. Specifically, by using infrared rays (including far-infrared rays) that easily absorb heat in the paste for forming the barrier portion, etc., both the paste portion and the resist portion can be efficiently dried. Since it has good thermal efficiency, it takes up less space than a wire-wound heater and can be made smaller. The barrier portion is usually black and easily absorbs infrared rays. Also, in the case of the paste for forming the electrode wiring for the back plate, a color that can easily absorb infrared rays can be obtained. Specifically, after a draining step for draining the developing solution or the rinsing liquid by an air knife or the like, a heating furnace for removing the solvent component of the developing liquid or the rinsing liquid that has permeated into the paste film is provided. This is achieved because the heating furnace has a panel-shaped infrared radiating section and performs heating by infrared rays. Further, a developing section for performing development, a rinsing section for performing rinsing, a draining section, and a drying furnace are arranged in this order,
While placing the processing substrate on the rollers and transporting it at a predetermined speed,
Since the processing of each unit is performed in this order, mass production is achieved. In particular, when the resist is a dry film resist, the entire processing apparatus and the entire process can be further simplified.

[0010]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A description will be given of an embodiment of a resist developing apparatus according to the present invention. FIG. 1 is a schematic diagram showing the entire configuration of an example of the embodiment, FIG. 2 (a) is a cross-sectional view of a drying furnace, and FIG. 2 (b) is a diagram viewed from a B0 direction in FIG. 1 (a). FIG. 3 is a partial perspective view showing the positional relationship between the panel heater and the glass substrate. It should be noted that in FIG. 1, the figures within the dotted circles are schematic diagrams showing the processing states of the respective units. 1, 2 and 3, reference numeral 100 denotes a resist developing apparatus,
10 is a developing unit, 113 is a nozzle, 115 is a developer, 12
0 is a rinsing part, 123 is a nozzle, 125 is a rinsing liquid, 1
Numeral 30 is an air knife unit (liquid draining unit), 133 is an air nozzle, 135 is air, 140 is a drying furnace, 143 is a panel heater, 143A is a panel heater holding unit, 1
45 is an infrared ray, 149 is a motor, 150 is a roller (rotary roll), and 180 is a processing substrate. A resist developing apparatus 100 shown in FIG. 1 is a developing apparatus for patterning a resist on a paste film for forming a barrier portion of a substrate for a plasma display panel (PDP). The processing unit 180 includes a unit 120, an air knife unit 130, and a drying furnace 140 in this order, and performs processing in each unit in this order while placing the processing substrate 180 on a roller (rotating roll) 150 and transporting the substrate at a predetermined speed. is there. The heating furnace has a panel-shaped infrared radiating section and performs heating by infrared rays, and efficiently removes the solvent component of the developing solution and the rinsing solution that has permeated into the paste film, in a high quality. Do well enough.

The developing unit 110 places the processing substrate 180 on a roller (rotating roll) 150 with the resist surface facing upward,
A developing solution is sprayed onto the resist surface by spraying from above the resist surface to perform development.

The rinsing section 120 is for placing the processing substrate 180 on a roller (rotating roll) 150 with the resist surface facing upward, and rinsing the resist surface by spraying a rinsing liquid from above the resist surface.

The air knife section 130 has a processing substrate 180 on a roller (rotating roll) 150 with the resist surface facing upward.
Is applied, and high-pressure air 135 is blown from above the resist surface with an air nozzle 133 to perform a liquid draining process.

The drying furnace 140 places the processing substrate 180 on a roller (rotating roll) 150 with the resist surface facing upward,
The processing substrate 180 is irradiated with infrared rays from the resist surface by the panel heater 143 to dry the resist portion and the paste film for forming the barrier, and has a structure as shown in FIG. The roller (rotating roll) 150 is driven by a motor 149 to rotate. FIG. 2 shows the whole in an easy-to-understand manner, and shows only main parts. As shown in FIG.
The drying oven 140 has a panel heater 143 of 120 mm square, 200 W, with seven in the substrate advancing direction and eleven in the width direction of the substrate (a total of 77) arranged in a grid at 20 mm intervals. This corresponds to the transport speed of the processing substrate and the size of the processing substrate. It is preferable to select the number of panel heaters to be used and the output of the panel heaters / sheet according to the transfer speed of the processing substrate and the size of the processing substrate.

Next, an example of a resist developing process in forming a barrier on the back panel for a PDP using the resist developing apparatus shown in FIG. 1 will be described with reference to FIGS. 4 and 1. As shown in FIG. 4A, an electrode wiring 420 is previously formed on one surface of a glass substrate 410 (size 650 mm × 1050 mm).
Is formed, a paste 440 for forming a barrier is applied to one surface of the substrate 415 on which the dielectric layer 430 is applied and formed, and after drying, further, as shown in FIG.
Dry film resist 450 on paste 440
(Hereinafter, also referred to as a dry film resist), and the resist 450 was exposed through a predetermined mask to prepare a processing substrate 415A (FIG. 4C). still,
The processing substrate 415A is a processing substrate 180 before processing shown in FIG.
Is equivalent to As the paste 440 for forming a barrier, inorganic powders such as alumina and zirconia that do not soften during the firing process, low-melting glass powder that flows and adheres during the firing process, and these powders before firing are further coated. A material prepared by mixing the following materials (だ) containing a small amount of a resin that can be lost by being vaporized, burned, decomposed, or the like by firing to form a dielectric layer 430 on a glass substrate 410 After application on top, it was dried. (Material paste layer) Glass frit: MB-10A (manufactured by Matsunami Glass Industry Co., Ltd., d ₅₀ = 2.6 μm) 64 parts filler (aggregate): WA # 8000 (Fuji-in Kobo Retiddo made, d ₅₀ = 1 0.0 μm) 7 parts Pigment: Dipoxide Black # 9510 (manufactured by Dainippon Seika Kogyo Co., Ltd.) 8 parts Resin: Ethocel STD-100FP (manufactured by Dow Chemical Co., Ltd.) 2 parts Solvent: diethylene glycol monobutyl ether acetate (JUNSEI CHEMICAL CO., LTD.) 9 parts Screen oil 759 (manufactured by Okuno Pharmaceutical Co., Ltd.) 9 parts After these were uniformly mixed, they were kneaded with a three-roll mill to prepare a paste. Parts mean parts by weight. As the dry film resist 450, NCP225 manufactured by Nippon Synthetic Chemical Industry Co., Ltd. was used and laminated at 80 ° C. The patterning of the dry film resist 450 was performed using ultraviolet light through a line pattern mask having a line width of 80 μm and a pitch of 220 μm.
The exposure conditions were 364 nm and the intensity was 200 μW /
cm ² , and the irradiation amount was 120 mJ / cm ² .

Next, in the developing section 110 shown in FIG. 1, spray development is performed from the side of the dry film resist 450, and then, in the rinsing section 120 shown in FIG. did.
(FIG. 4D) As a developing solution, spray development was performed at a liquid temperature of 30 ° C. using a 1 wt% aqueous solution of sodium carbonate. As the rinsing liquid, pure water at a liquid temperature of 30 ° was used.

Next, as shown in FIG. 1, after a water draining process is performed in the air knife section 130, the drying oven 14
At 0, a drying treatment was performed. The drying was performed by turning on the panel heater (77 sheets in total) shown in FIG. 3 and transporting the processed substrate at a speed of 0.5 m / min.

The paste 440 is cut by the sandblasting method using the patterned resist 450 as a mask for sandblasting by using the processed substrate thus developed (FIG. 4E). 440 is processed into a predetermined shape (FIG. 4 (f)), and then the resist 450 is removed (FIG. 4 (g)).
0 was fired, but the drying oven 1 continued after the resist 450 was developed, followed by the draining treatment by the air knife unit 130.
In the drying process 40, the water seeping into the paste 440 can be sufficiently removed.
Defects in the barrier due to swelling of the resist due to the residual water seeping into the barrier were significantly reduced.

[0019]

As described above, the present invention is directed to a liquid draining process using an air knife or the like after developing a resist when forming a barrier portion, an electrode portion, and the like of a PDP substrate using a paste film. In the subsequent drying process, it is possible to sufficiently remove moisture oozing into the paste film, and to significantly reduce barrier defect defects due to resist swelling due to residual moisture oozing into the paste film. It has become possible to provide a resist development processing apparatus capable of performing the above-described steps. At the same time, the pace of the device can be reduced. As a result, it has become possible to cope with mass production, as PDPs are increasingly required to be large-sized and mass-produced.

[Brief description of the drawings]

FIG. 1 is a schematic configuration diagram showing an example of an embodiment of a resist development processing apparatus of the present invention.

FIG. 2 is a schematic diagram showing a drying furnace.

FIG. 3 is a schematic diagram showing a positional relationship between a panel heater and a glass substrate in a drying furnace.

FIG. 4 is a process diagram of forming a barrier.

FIG. 5 is a process chart for explaining a method for manufacturing a PDP substrate.

FIG. 6 is a perspective view illustrating a PDP.

[Explanation of symbols]

 Reference Signs List 100 resist developing apparatus 110 developing section 113 nozzle 115 developing solution 120 rinsing section 123 nozzle 125 rinsing liquid 130 air knife section 133 air nozzle 135 air 140 drying furnace 143 panel heater 143A panel heater holding section 145 infrared 149 motor 150 roller (rotating roll) 180 processing substrate 410 glass substrate 415 substrate 415A processing substrate 420 electrode wiring 430 dielectric layer 440 paste 450 resist 460 polishing sand 470 barrier

Claims (3)

[Claims] 1. A developing apparatus for patterning a resist on a paste film for forming a barrier portion, an electrode portion and the like of a substrate for a plasma display panel, wherein the developing solution and a rinsing liquid are rinsed by an air knife or the like. A heating furnace for removing the solvent of the developing solution and the rinsing liquid that has permeated into the paste film after the liquid removal process section for performing the liquid removal is provided, and the heating furnace includes a panel-shaped infrared ray. A resist developing apparatus having a radiating section and performing heating by infrared rays. 2. The development unit according to claim 1, wherein the development unit performs development.
A rinsing section for performing a rinsing, a draining section, and a drying furnace are arranged in this order, and the processing is performed on each section in this order while the processing substrate is placed on the rollers and transported at a predetermined speed. Development processing equipment. 3. The resist developing apparatus according to claim 1, wherein the resist is a dry film resist.