JPH11202502A - Resist peeling treatment apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an apparatus capable of efficiently executing a resist peeling treatment after sand blasting to execute patterning by spraying polishing sand to the paste film on a substrate via a mask of a prescribed shape consisting of a resist film and is capable of sufficiently dealing with quality. SOLUTION: This apparatus has a first washing section 120 for washing away the polishing sand remaining at the resist film by sand blasting, a resist peeling section 130 for peeling and removing the resist film washed in this first washing section 120 by a peeling liquid, a second washing section 140 for washing away the peeling liquid remaining at the substrate after peeling and removing in the resist peeling section 130, these sections being respectively discretely managable, and a third washing section 150. The first washing section 120 and the second washing section 140 respectively circulate and supply the water for washing via prescribed filters F0 to F5 for removing the polishing sand.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resist stripping apparatus for removing a resist film after sandblasting for cutting a paste film on a substrate using a mask having a predetermined shape made of a resist film. More particularly, the present invention relates to a resist stripping apparatus for stripping a resist after sandblasting in which a paste film provided on a substrate for a plasma display panel is processed using a resist film as a mask.

[0002]

2. Description of the Related Art In recent years, plasma display panels (hereinafter, also referred to as PDPs) have been used in various display devices because of their small depth, light weight, clear display, and wide viewing angle compared to liquid crystal panels. It is being used.
For example, an AC type PDP has, for example, a structure as shown in FIG.
20, a pair of regularly arranged metal electrodes 450 as bus electrodes and a composite electrode composed of a transparent electrode 440 and an address 480 are provided, and a gas mainly containing neon, xenon or the like is sealed between them. I have. And
By applying a voltage between these electrodes and generating a discharge in minute cells around the electrodes, each cell emits light to perform display. FIG. 4 is a perspective view of the PDP structure.
10), the rear plate (glass substrate 420) is shown apart from the actual case. Further, the DC type PDP is different from the AC type in that the electrodes have a structure not coated with a dielectric layer, but the discharge effect is the same. 4 has a structure in which a base layer 467 is provided on one surface of a glass substrate 420 and a dielectric layer 465 is provided thereon, but the base layer 467 and the dielectric layer 465 are not necessarily required. .

[0003] Plasma display (PDP)
In the case of the AC type, for example, as shown in FIG. 3, a back plate and a front plate are respectively manufactured in separate steps, and a PDP is assembled using both of them (S330). Hereinafter, a process of manufacturing a rear plate and a front plate for a PDP will be briefly described. First, the manufacturing process of the back plate will be described. First, a glass substrate is prepared (S311), and a paste for a cathode (for electrode wiring) is printed in a predetermined pattern on the glass substrate by a thick film printing method, and the paste is dried and fired to form electrode wiring. (S312) Next, a barrier (also referred to as a barrier rib) is formed on the electrode wiring formation side of the glass substrate by a printing method or a sandblast method. (S313) In the case of the printing method, a barrier (barrier rib) forming paste is printed in a predetermined pattern on a glass substrate by a thick film printing method.
This is dried. The thickness of the barrier is large (for example, 160-2
(Thickness of 00 μm) Since this film thickness cannot be obtained by one thick film printing, printing and drying of the barrier forming paste are performed a plurality of times. After a predetermined film thickness is obtained, the paste is fired. In the case of the sand blast method, a barrier forming material is applied on a glass substrate, and a predetermined resist pattern is further formed thereon. Then, abrasive sand is sprayed to process the barrier forming material into a shape corresponding to the resist pattern. Is fired to form a barrier. Further, a paste for a phosphor (for example, a paste for a phosphor containing indium oxide) is printed in a predetermined pattern on the substrate on which the barrier is formed by a thick film printing method, and then dried and fired (S314). Form a faceplate. (S315)

[0004] Next, a process for manufacturing the front plate will be described. First, a glass substrate is prepared (S321), and a vapor deposition layer of, for example, ITO (Indium Tin Oxide) is patterned on the glass substrate. (S321) The patterning is performed by a normal photolithography process (lithography technology). Next, three layers of Cr-Cu-Cr (chromium, copper, chromium) are formed by vapor deposition or sputtering (S322), and similarly patterned by a photolithography process (lithography technique), or a paste for electrode wiring is formed in a predetermined manner. An electrode wiring for electric discharge is formed together with the patterned ITO film by printing with a pattern. (S323) Next, a transparent dielectric layer is formed by solid printing of a paste-like low melting point glass (S324), and a front plate is obtained. (S325)

[0005] The formation of the barrier using the sandblasting method for the back plate for PDP is usually performed as shown in FIG. This will be briefly described below. First, a paste 340 for forming a barrier is applied on the dielectric layer 330 of the substrate 315 (FIG. 2A) in which the electrode wiring 320 and the dielectric layer 330 are formed on the glass substrate 310, and dried.
(FIG. 2B) Next, a resist 350 is formed on the paste 340 (FIG. 2C), and the resist 350 is exposed to light using a predetermined mask, developed, and patterned into a predetermined pattern.
(FIG. 2 (d)) Normally, in forming the resist 350 (FIG. 2 (c)), a commercially available dry film resist in which a resist is formed on a base film and covered with a cover film is used. A method of removing the cover film and laminating the resist portion together with the base film on the paste side of the processing substrate is advantageously employed from the viewpoint of workability. The development is performed with the base film removed. Subsequently, a rinsing process, a draining process using an air knife or the like, and a drying process are sequentially performed to form a patterned resist 350.
2 is used as a mask to perform a sandblasting process of cutting the paste 340 by blowing abrasive sand 360 (FIG. 2).
(E)) Processing the paste for forming a barrier into a shape corresponding to the pattern of the resist 350. (FIG. 2F) Next, after removing the resist 350, the paste is baked to form the barrier 370. (Fig. 2 (g))

However, in the case of resist stripping after sandblasting, polishing sand adheres or mixes into the resist or stripping solution, so that the processing can be performed efficiently and sufficiently in terms of quality. In particular, it is a serious problem in mass production.
Conventionally, in response to this problem, a method has been adopted in which air is blown from a nozzle to a processing substrate immediately after sandblasting, but due to static electricity of the substrate and polishing sand, etc.
Sufficient effects were not obtained.

[0007]

As described above, the PDP
In sandblasting of a substrate for use, there has been a demand for a resist stripping apparatus capable of performing a resist stripping process efficiently and sufficiently in terms of quality. According to the present invention, a sandblasting process for patterning a paste film by blowing abrasive sand on the paste film on a substrate and cutting the paste film through a mask having a predetermined shape made of a resist film. It is an object of the present invention to provide a resist stripping apparatus for removing a resist film, which can efficiently perform a resist stripping process and can sufficiently cope with quality.

[0008]

SUMMARY OF THE INVENTION A resist stripping apparatus of the present invention cuts a paste film by blowing abrasive sand on a paste film on a substrate through a mask having a predetermined shape made of a resist film. A stripping device for removing a resist film after sandblasting for patterning a film, the first washing unit for washing and removing polishing sand remaining on the resist film by sandblasting in order; A resist stripping section for stripping and removing the resist film washed with water in the washing section and a stripping solution remaining on the substrate after stripping and removing in the resist stripping section are each separately washed with water. A second flushing section and a third flushing section that can be managed are provided, and the first flushing section and the second flushing section are each provided with a predetermined flushing filter for removing abrasive sand. Via Iruta is for, characterized in that to supply the circulating water for washing.
In the above, the first rinsing section is for circulating water through the water storage section, and separates the water from the water storage section through the filter separately from the path of the circulating water. A filtering unit for returning to the storage unit is provided. Further, in the above, the resist stripper is characterized in that the stripper is circulated and supplied through a predetermined filter for removing abrasive sand. Further, in the above, the resist removing portion and the second washing portion are each provided with a resist residue contained in the removing liquid used for filtering the resist residue contained in the removing liquid used for the resist removing or the water used for the water washing. Characterized in that a mesh made of stainless steel or the like is provided for filtering the water. Further, in the above, a draining portion for draining or a draining portion for stripping liquid is provided between the first washing portion and the resist removing portion and between the resist removing portion and the second washing portion, respectively. It is characterized by having. Further, the substrate in the above is a substrate for a plasma display panel (PDP).

[0009]

According to the resist stripping apparatus of the present invention, a resist stripping apparatus for removing a resist film after sandblasting a paste portion on a substrate through a mask made of the resist film by adopting such a structure. However, it is possible to provide an apparatus that can efficiently perform the resist stripping process and that can sufficiently cope with the quality. Specifically, a first washing section for washing and removing polishing sand remaining on the resist film by sandblasting, and a resist film washed in the first washing section are sequentially stripped and removed by a stripping liquid. And a second rinsing unit and a third rinsing unit that can be individually managed for rinsing and removing the stripping solution remaining on the substrate after stripping and removing in the resist stripping unit. This is achieved by the first rinsing section and the second rinsing section, each of which circulates and supplies rinsing water through a predetermined filter for removing abrasive sand. doing.
And the 1st washing part is for circulating and using water through the water storage part, and, apart from the route of the circulating water,
By providing the filtering unit that returns the water from the water storage unit to the water storage unit via the filter, the circulation amount in the first washing unit can be increased, which is suitable for mass production. Further, the resist stripping section circulates and supplies the stripping solution through a predetermined filter for removing the polishing sand, thereby removing the polishing sand more efficiently. In addition, the resist stripping section,
Each of the second washing units is made of stainless steel or the like for filtering the resist residue contained in the stripping solution used for removing the resist, or for filtering the resist residue contained in the water used for the water washing. The provision of the mesh ensures the resist stripping process. Further, a draining part for draining or a draining part for stripping liquid is provided between the first washing part and the resist removing part and between the resist removing part and the second washing part, respectively. As a result, the mixing of water into the stripping solution and the mixing of the stripping solution into the water of the second rinsing section are minimized, and each has good processing of the resist stripping section and good processability in the second rinsing section. And can be. Further, when the substrate is a substrate for a plasma display panel (PDP), it is particularly effective in terms of mass productivity.

[0010]

DESCRIPTION OF THE PREFERRED EMBODIMENTS A resist stripping apparatus according to the present invention will be described by way of an embodiment. FIG. 1 is a schematic diagram showing a configuration of an example of the embodiment. Front half of FIG. 1 (a) device, both in shows the FIG 1 (b) the second half portion in which is integral, P shown in P ₀ point and FIG. 1 (b) shown in FIG. 1 (a) _The point ₀ indicates the same position. FIG. 1 is a simplified illustration of only essential parts for simplicity, and includes a sensor for controlling a processing substrate, a driving part, and a liquid replenishing part for each water storage part and stripping liquid storage part. Is abbreviated. Also, in FIG. 1, the dotted arrows indicate the traveling direction of the processing substrate 210. In FIG. 1, reference numeral 100 denotes a resist stripping apparatus, 110 denotes a charging unit, 120 denotes a first washing unit, 1
21 is a nozzle, 122 is water, 123 is a water reservoir, 125
Is a drainer, 127 is air, 130 is a resist stripper, 131 is a nozzle, 132 is a stripper, 133 is a stripper reservoir, 135 is a stripper drain, 137 is air, 14
0 is the second washing section, 141 is a nozzle, 142 is water, 14
3 is a water storage unit, 150 is a third washing unit, 151 is a nozzle, 152 is water, 153 is a water storage unit, 160 is a fourth washing unit, 161 is a nozzle, 162 is water, 163 is a water storage unit, 170 is an air knife section (liquid draining section), 171
Is a blowing unit (nozzle), 172 is air, 180 is a drying unit, 181 is a blowing unit (nozzle), 182 is air, 190 is a discharge unit, 210 is a processing substrate (back plate), 2
Reference numeral 20 denotes a transport roller (rotary roll), and reference numeral 225 denotes a pressing roll. F0-F7 are filters, P0-P
5 is a pump, D1 to D5 are a liquid discharge part, BL is a blower,
H0 is a heater, and C1 is a compressor. A resist stripping apparatus 100 shown in FIG. 1 has a structure in which a paste film is provided on one surface of a back plate for a PDP, and a mask having a predetermined shape is formed on the paste film. This is a resist stripping apparatus for removing a resist film after sand blasting by blowing abrasive sand on a paste film on a processing substrate (back plate) through the above mask. Then, in order, a charging unit 110 for charging the back plate (processed substrate 210) after the sand blasting, a first rinsing unit 120 for rinsing and removing polishing sand remaining on the resist film by the sand blasting, and a rinsing A draining section 125 for removing water adhering in the section, a resist stripping section 130 for stripping and removing the resist film washed in the first washing section with a stripping liquid, and a stripping solution for cutting off the stripping liquid A second washing unit 140, which can be individually managed, for washing and removing a stripping solution remaining on the processing substrate (back plate) 210 after stripping and removing by the cutting unit 135 and the resist stripping unit 130; The unit 150 includes a unit 150, a fourth washing unit 160, and a discharge unit 190 that discharges the processed substrate (back plate) 210 after the resist stripping process. Then, the processing substrate 210 subjected to the sandblasting processing is input from the input unit 110, processed by each unit in order, and discharged to the discharge unit 190.

First washing section 120, second washing section 140
Respectively, through a filter F1 or F2 for removing abrasive sand used for sandblasting,
The washing water is circulated by the pump P1 or P2 and supplied to the nozzle 121 or 131. The hole diameters of the filters F1 and F2 are determined according to the size of the sand used for sandblasting. When alumina having a diameter of 10 to 15 μm is used as the polishing sand, one having a pore diameter of 5 to 10 μm is used. Similarly, the third rinsing unit 150 and the fourth rinsing unit 160 circulate with the pumps P3 and P4 via the filters F3 and F4, respectively, and supply the working liquid to the nozzles 151 and 161. . The filters F3 and F4 are also determined according to the diameter of the sand. In addition, it is preferable to provide a liquid flow path (branch path) in which a similar filter is provided in parallel with the above-mentioned filter, and to provide a valve before and after the filter so that the filter is replaced by opening and closing the valve. In this way, the filter can be replaced without stopping the apparatus. Similarly, the resist peeling section 130 is also provided with a pump P5 through a filter F5 for removing abrasive sand used for sandblasting.
And the stripping liquid is supplied to the nozzle 131. The pore size of the filter F5 is also determined according to the size of the sand used for sandblasting. Similarly, it is preferable to provide a liquid flow path provided with a similar filter in parallel with the filter F5.

The first water washing section is for removing most of the polishing sand adhered to the processing substrate 210 by sandblasting, and is a water storage section 1 for storing water used in the water washing.
23 is provided, from which water is supplied to the nozzle 122 by the pump 1 via the filter F1, and separately from the flow path to the nozzle, water from the water storage unit 123 is supplied by the pump P0 via the filter F0. , A channel for circulating again to the water storage unit 123, that is, a filtering unit is provided.
This flow path (filtering section) is for filtering abrasive sand contained in the water stored in the water storage section 123, and a plurality of flow paths are provided as necessary. In this flow path, it is preferable to provide a branch path parallel to the filter section as described above so that the filter can be replaced without stopping the flow in the flow path.

The draining section 125 is provided between the first washing section 120 and the resist stripping section 130, and is provided with air 127.
To remove water adhering to the processing substrate by spraying, and to prevent water from being mixed into the stripping solution of the resist stripping unit 130 as much as possible, thereby preventing deterioration of the stripping effect of the stripping solution due to water mixing as much as possible. Can be. Air 1
27 is supplied through a filter by a compressor, similarly to an air knife unit (liquid draining unit) 170 described later.

The resist stripping section 130 is for stripping the resist, which becomes a sand blasting-resistant sand mask, and the stripping liquid 132 is supplied from the nozzle 131 to the processing substrate 2.
The resist is dissolved or swelled by spraying on the resist to remove the resist. The stripping solution sprayed from the nozzle is collected in the stripping solution storage 133 via the mesh 134 made of stainless steel or the like, and is again circulated to the nozzle 131 by the pump P5 through the filter F5 and used. Normally, it is necessary to adjust the temperature to a predetermined temperature in order for the stripping liquid to maintain a good stripping property. For this reason, it is preferable to provide a temperature adjustment mechanism for adjusting the liquid stored in the stripping liquid storage 133 to a predetermined temperature.

The stripper removing section 135 is provided with a resist stripper 1
30 and the second washing section 140, the air 1
37 is applied to remove the stripping solution adhering to the processing substrate, and to prevent the mixing of the stripping solution into the water of the second washing section 140 as much as possible, thereby deteriorating the water washing effect due to the mixing of the stripping solution. Can be prevented as much as possible. The air 137 is supplied to an air knife (liquid drain) 17 described later.
Like 0, supplied by a compressor through a filter.

Third washing section 150, fourth washing section 160
Is to make the washing of the processing substrate 210 more perfect.

After the fourth washing section 160, the air knife section (liquid drain section) 170 blows air 172 from a spray section (nozzle) 171 by applying pressure to the processing substrate 2210 to blow off attached moisture. The processing substrate is dried in combination with the subsequent blowing of hot air or hot air from the drying unit 180 with the air 182 to the processing substrate. Air 172 is supplied to the spraying part (nozzle) 171 via the filter F7 by the compressor C1. The drying unit 180 blows hot or hot air 182 from a blowing unit (nozzle) 181 onto the processing substrate 210 from which moisture has been blown off by the air knife unit (liquid removing unit) 170 to dry the processing substrate 210. It is. The air 182 of hot air or hot air is supplied to a blowing unit (nozzle) 181 by a blower BL via a heater H0.

As described above, the processing substrate 210 is obtained by subjecting the barrier of the back plate for PDP to sandblasting using a resist film as a mask, as shown in FIG. 2 (f). In this state, 350 is attached. As the material of the paste film for forming the barrier, inorganic powders such as alumina and zirconia that do not soften during the firing process,
It contained a small amount of low melting point glass powder for flowing and fixing during the firing process, and a resin that could be evaporated, burned, decomposed, etc. by firing to form a film of these powders before firing. Things are used. As abrasive sand for sandblasting, alumina of 10 to 15 μm is generally used, but is not limited thereto. One example of the material of the paste film for forming the barrier is shown below. This was prepared by mixing the following materials. (Material paste layer) Glass frit: MB-10A (manufactured by Matsunami Glass Industry Co., Ltd., d ₅₀ = 2.6 μm) 64 parts filler (aggregate): WA # 8000 (Fuji-in Kobo Retiddo made, d ₅₀ = 1 0.0 μm) 7 parts Pigment: Dipoxide Black # 9510 (manufactured by Dainippon Seika Kogyo Co., Ltd.) 8 parts Resin: Ethocel STD-100FP (manufactured by Dow Chemical Co., Ltd.) 2 parts Solvent: diethylene glycol monobutyl ether acetate (JUNSEI CHEMICAL CO., LTD.) 9 parts Screen oil 759 (manufactured by Okuno Pharmaceutical Co., Ltd.) 9 parts After these were uniformly mixed, they were kneaded with a three-roll mill to prepare a paste. Parts mean parts by weight. As the resist, it is advantageous in terms of workability and equipment to use a dry film resist that is commercially available in a form in which a resist is provided on a base film and a cover film is further provided thereon. There is no limitation. Examples of the dry film resist include NCP225 manufactured by Nippon Synthetic Chemical Industry Co., Ltd., but the type is not limited thereto.

Stripping solution using the above resist (FIG. 1)
132), a 5 wt% or less aqueous sodium hydroxide solution is used at 30 to 50 ° C.

The conditions of each processing unit shown in FIG.
The material of the barrier forming paste used for the processing substrate 210, the material of the resist film, the transport speed of the processing substrate 210,
It must be determined as appropriate depending on other conditions.

[0021]

As described above, according to the present invention, the paste film is patterned by blowing abrasive sand on the paste film on the substrate through a mask of a predetermined shape made of a resist film to cut the paste film. After the sandblasting performed, in a stripping device for removing a resist film, it is possible to provide a resist stripping device capable of efficiently performing a resist stripping process and sufficiently coping with quality. In particular, the present invention is effective when used for processing of a PDP substrate after sandblasting, and as a result, can be used for mass production.

[Brief description of the drawings]

FIG. 1 is a schematic configuration diagram showing an example of an embodiment of a resist stripping apparatus of the present invention.

FIG. 2 is a process diagram of forming a barrier.

FIG. 3 is a process chart for explaining a method of manufacturing a PDP substrate.

FIG. 4 is a perspective view for explaining a PDP.

[Explanation of symbols]

REFERENCE SIGNS LIST 100 resist stripping apparatus 110 feeding section 120 first washing section 121 nozzle 122 water 123 water storage section 125 draining section 127 air 130 resist stripping section 131 nozzle 132 stripping liquid 133 stripping liquid storage section 135 stripping liquid cutting section 137 air 140 th 2 washing section 141 nozzle 142 water 143 water storage section 150 third washing section 151 nozzle 152 water 153 water storage section 160 fourth washing section 161 nozzle 162 water 163 water storage section 170 air knife section (liquid cutting section) 180 Drying unit 190 Discharge unit 210 Processing substrate (back plate) 220 Roller for conveyance (rotary roll) 225 Press roll unit F0 to F5, F7 Filter P0 to P5 Pump D1 to D5 Liquid discharge unit BL Prower H0 Heater C1 Compressor

Claims (6)

[Claims] 1. A method for removing a resist film after sandblasting for patterning the paste film by blowing abrasive sand on the paste film on a substrate through a mask having a predetermined shape made of a resist film to cut the paste film. A first washing section for washing and removing polishing sand remaining on the resist film by sandblasting, and a stripping solution for removing the resist film washed with water in the first washing section. A second water washing unit and a third water washing unit, each of which can be individually managed to wash and remove a stripping solution remaining on the substrate after the film is stripped and removed by the resist stripping unit. The first washing section and the second washing section each circulate and supply washing water via a predetermined filter for removing abrasive sand. A resist stripping apparatus characterized in that: 2. The first washing section according to claim 1, wherein the first rinsing section circulates and uses the water through the water storing section, and separates the water from the water storing section separately from a route of the circulating water. A resist stripping apparatus, further comprising a filtering unit for returning to a water storage unit via a filter. 3. A resist stripping apparatus according to claim 1, wherein the resist stripping section circulates and feeds a stripping solution through a predetermined filter for removing abrasive sand. . 4. The resist stripping section according to claim 1, wherein the resist stripping section and the second washing section are each used for filtering a resist residue contained in a stripping solution used for resist stripping or for washing with water. A resist stripping apparatus characterized in that a mesh made of stainless steel or the like is provided for filtering resist residue contained in waste water. 5. The method according to claim 1, wherein the first water-washing part and the resist-peeling part, and the resist-water-peeling part and the second water-washing part are drained or stripped, respectively. A resist stripping treatment device provided with a liquid drainage section for use. 6. A resist stripping apparatus according to claim 1, wherein the substrate is a substrate for a plasma display panel.