JPH11121696A - 誘電体キャパシタの製造方法および半導体記憶装置の製造方法 - Google Patents

誘電体キャパシタの製造方法および半導体記憶装置の製造方法

Info

Publication number
JPH11121696A
JPH11121696A JP9286761A JP28676197A JPH11121696A JP H11121696 A JPH11121696 A JP H11121696A JP 9286761 A JP9286761 A JP 9286761A JP 28676197 A JP28676197 A JP 28676197A JP H11121696 A JPH11121696 A JP H11121696A
Authority
JP
Japan
Prior art keywords
film
dielectric capacitor
dielectric
manufacturing
precursor film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9286761A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11121696A5 (https=
Inventor
Katsuyuki Hironaka
克行 広中
Masataka Sugiyama
正隆 杉山
Chiharu Isobe
千春 磯辺
Takaaki Ami
隆明 網
Yuji Ikeda
裕司 池田
Koji Watabe
浩司 渡部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP9286761A priority Critical patent/JPH11121696A/ja
Publication of JPH11121696A publication Critical patent/JPH11121696A/ja
Publication of JPH11121696A5 publication Critical patent/JPH11121696A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP9286761A 1997-10-20 1997-10-20 誘電体キャパシタの製造方法および半導体記憶装置の製造方法 Pending JPH11121696A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9286761A JPH11121696A (ja) 1997-10-20 1997-10-20 誘電体キャパシタの製造方法および半導体記憶装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9286761A JPH11121696A (ja) 1997-10-20 1997-10-20 誘電体キャパシタの製造方法および半導体記憶装置の製造方法

Publications (2)

Publication Number Publication Date
JPH11121696A true JPH11121696A (ja) 1999-04-30
JPH11121696A5 JPH11121696A5 (https=) 2005-10-27

Family

ID=17708714

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9286761A Pending JPH11121696A (ja) 1997-10-20 1997-10-20 誘電体キャパシタの製造方法および半導体記憶装置の製造方法

Country Status (1)

Country Link
JP (1) JPH11121696A (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6436838B1 (en) 2000-04-21 2002-08-20 Applied Materials, Inc. Method of patterning lead zirconium titanate and barium strontium titanate
JP2006182642A (ja) * 2002-10-24 2006-07-13 Seiko Epson Corp 強誘電体膜、強誘電体メモリ、圧電素子、半導体素子及び強誘電体膜の製造方法
US7157348B2 (en) 2002-03-15 2007-01-02 Matsushita Electric Industrial Co., Ltd. Method for fabricating capacitor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6436838B1 (en) 2000-04-21 2002-08-20 Applied Materials, Inc. Method of patterning lead zirconium titanate and barium strontium titanate
US7157348B2 (en) 2002-03-15 2007-01-02 Matsushita Electric Industrial Co., Ltd. Method for fabricating capacitor device
JP2006182642A (ja) * 2002-10-24 2006-07-13 Seiko Epson Corp 強誘電体膜、強誘電体メモリ、圧電素子、半導体素子及び強誘電体膜の製造方法

Similar Documents

Publication Publication Date Title
JP4428500B2 (ja) 容量素子及びその製造方法
US6730951B2 (en) Capacitor, semiconductor memory device, and method for manufacturing the same
JP4160638B2 (ja) 半導体装置
US20070045689A1 (en) Ferroelectric Structures Including Multilayer Lower Electrodes and Multilayer Upper Electrodes, and Methods of Manufacturing Same
JPH11126883A (ja) 半導体メモリ素子
US20090224301A1 (en) Semiconductor memory device and method of manufacturing thereof
US20090127603A1 (en) Semiconductor memory device and manufacturing method thereof
KR19990030200A (ko) 커패시터와 ｍｏｓ 트랜지스터를 갖는 반도체 기억소자
US6995069B2 (en) Dielectric capacitor manufacturing method and semiconductor storage device manufacturing method
KR20080098680A (ko) 반도체 장치 및 그 제조 방법
US20060214204A1 (en) Ferroelectric structures and devices including upper/lower electrodes of different metals and methods of forming the same
US8664011B2 (en) Semiconductor device and method of manufacturing the semiconductor device
JP2012151292A (ja) 半導体装置及びその製造方法
US6503792B2 (en) Method for fabricating a patterned metal-oxide-containing layer
JP5655585B2 (ja) 半導体装置の製造方法
US6987308B2 (en) Ferroelectric capacitors with metal oxide for inhibiting fatigue
US6365420B2 (en) Method of forming dielectric film with good crystallinity and low leak
JPH11121704A (ja) 誘電体キャパシタおよびその製造方法
JP2004253627A (ja) 半導体装置及びその製造方法
US7049650B1 (en) Semiconductor device
JP2003179212A (ja) キャパシタ、メモリ素子およびその製造方法
JPH11121696A (ja) 誘電体キャパシタの製造方法および半導体記憶装置の製造方法
JP3830652B2 (ja) 半導体装置及びその製造方法
KR100443362B1 (ko) 2단계 열처리를 적용한 반도체 소자의 캐패시터 제조방법
JP3937033B2 (ja) 強誘電体材料、その製造方法及び強誘電体メモリ

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20040212

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20041222

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20050111

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050728

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20060531

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060606

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060725

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070227

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070418

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20090324