JPH11111749A - Semiconductor device, circuit member using the same, and method for manufacturing them - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a resin-sealing type semiconductor device, a circuit member using for it, and a method for manufacturing them, wherein the occupying percentage of a semiconductor element is high, reduction in size is possible, mounting density to a circuit board is improved, and coping with multi-pin is possible. SOLUTION: A plurality of terminal parts 4, wherein an internal terminal 4A and an external terminal 4B are provided on a front surface side and a rear surface side, respectively, as one body while independently provided electrically, so that internal terminal surfaces are almost fish with identical flat plane, a die pad part 6, a semiconductor element 12 which is tightly attached to a rear surface of the die pad part 6 with a circuit formation surface side electrically insulated, and a bonding wire 14 for electrically connecting the internal terminal 4A of the terminal part 4 to a terminal of the semiconductor element 12 are provided. Here, with the die pad part 6 allowed to protrude the internal terminal 4a side of the terminal part 4 to form a step on a front surface side with respect to the internal terminal surface, the terminal part 4, the die pad part 6, the semiconductor element 12, a bonding wire 14 are sealed with a resin material, so that a part of the external terminal 4B of each terminal part is exposed to the outside, thus constituting a semiconductor device 11.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin-sealed semiconductor device having a semiconductor element mounted thereon, a circuit member used for the semiconductor device, and a method of manufacturing the same.

[0002]

2. Description of the Related Art In recent years, semiconductor devices have been typified by LSI ASICs due to advances in high integration and miniaturization technologies, and the trend toward higher performance and lighter, thinner and smaller electric appliances (current trend).
It is becoming more and more highly integrated and highly functional.

Accordingly, the development trend of the sealing type semiconductor device using the lead frame has been
OJ (Small Outline J-Leaded
Package or QFP (Quad Flat P)
through a surface mount type package such as a TSOP (Thin Small Outline).
LOC (Lea) for the purpose of package miniaturization with the main axis of thinning due to the development of Package) and improvement of chip storage efficiency by making the package three-dimensional.
d On Chip).

[0004]

However, resin-encapsulated semiconductor device packages are required to have higher integration, higher functionality, more pins, thinner, and smaller. Even in a conventional package, there is a limit to miniaturization of the package because there is a routing of a lead in an outer peripheral portion of the semiconductor element.

[0005] In a small package such as a TSOP or the like, there is a limit to increasing the number of pins in terms of lead routing and pin pitch.

SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and has a high occupancy rate of a semiconductor element, can be reduced in size, and can improve a mounting density on a circuit board.
It is still another object of the present invention to provide a resin-sealed semiconductor device capable of coping with an increase in the number of pins, a circuit member used in the semiconductor device, and a method of manufacturing the circuit member and the semiconductor device.

[0007]

In order to achieve the above object, a semiconductor device according to the present invention has an internal terminal on the front side and an external terminal on the back side integrated with the front and back sides, and the internal terminal surface is substantially one. A plurality of terminal portions that are electrically independently disposed so as to be located on a plane, and a die pad portion that is provided so as to protrude toward the internal terminal of the terminal portion so that a surface side of the terminal portion forms a step with respect to the internal terminal surface. A semiconductor element fixed on the back surface of the die pad portion on the circuit forming surface side while being electrically insulated, a bonding wire for electrically connecting an internal terminal of each terminal portion and a terminal of the semiconductor element, And a sealing member for sealing the terminal portion, the die pad portion, the semiconductor element, and the bonding wire so that a part of the external terminal is exposed to the outside.

Further, the semiconductor device of the present invention is configured such that at least a part of the surface side of the die pad is exposed to the outside.

Further, the semiconductor device of the present invention has a configuration in which external electrodes made of solder are provided on external terminals exposed to the outside.

A circuit member according to the present invention comprises an outer frame member, a plurality of terminals arranged independently from the outer frame member via connection leads, and a plurality of terminal portions provided from the outer frame member via connection leads. And a die pad portion arranged on the front side, each terminal portion integrally has an internal terminal on the front side and an external terminal on the back side, and the internal terminal surface of each terminal portion is located on substantially one plane, The die pad portion is configured to protrude toward the internal terminal surface side so that its surface side is at a position where a step is formed with respect to the internal terminal surface.

Further, the circuit member of the present invention is configured such that an electrically insulating double-sided adhesive tape is provided on the back side of the die pad portion.

According to the method of manufacturing a circuit member of the present invention, a plurality of terminal portions having an internal terminal on the front side and external terminals on the back side integrally, a die pad portion, and a plurality of terminal portions are formed by etching the conductive substrate. After forming a circuit member pattern comprising an outer frame member wherein the parts are integrally connected to each other independently via connection leads, and the die pad part is integrally connected via the connection leads. The configuration is such that the die pad portion of the circuit member pattern protrudes toward the internal terminal surface of the terminal portion, and the die pad portion is processed at a position where the surface side of the die pad portion forms a step with respect to the internal terminal surface.

Further, the method of manufacturing a circuit member according to the present invention is configured such that an electrically insulating double-sided adhesive tape is attached to the back side of the die pad portion.

According to a method of manufacturing a semiconductor device of the present invention, a semiconductor mounted on a circuit member manufactured by the above manufacturing method by electrically insulating and fixing a circuit forming surface side of a semiconductor element to a back surface side of a die pad portion. An element mounting step, a wire bonding step of electrically connecting an internal terminal of the circuit member and a terminal of the semiconductor element with a bonding wire, and exposing a part of the external terminal to the outside, the terminal section, the die pad section, and the semiconductor element. And a sealing step of sealing the bonding wire with a resin material, and an outer frame member separating and removing step of cutting each connection lead of the circuit member and removing the outer frame member.

According to the present invention, the step between the internal terminal surface and the front surface of the die pad portion electrically connects the terminal of the semiconductor element having the circuit formation surface to the rear surface of the die pad portion and the internal terminal. The tolerance of the loop height of the bonding wire to be connected is increased, and the die pad portion acts as a heat radiating plate for heat generated on the circuit forming surface of the semiconductor element, and further, by forming a solder electrode on an external terminal. , BGA (Ball Grid Array) type semiconductor device becomes possible, and the handling property and the short prevention property are improved.

[0016]

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is a plan view showing an embodiment of the circuit member of the present invention, and FIG. 2 is a longitudinal sectional view taken along the line II-II of the circuit member shown in FIG. 1 and 2, a circuit member 1 of the present invention includes an outer frame member 2, a plurality of terminal portions 4 arranged independently from each other via a connection lead 3 from the outer frame member 2, And a die pad portion 6 provided from the frame member 2 via connection leads 8.

The outer frame member 2 has a rectangular outer shape and an inner opening shape, and each connection lead 3 projects from each side of the inner opening of the outer frame member 2 in the same plane.

The terminal portion 4 is provided at the tip of the connection lead 3, and has an internal terminal 4A on the front side and an external terminal 4B on the rear side integrally. In the illustrated example, the silver plating layer 5 is provided on the internal terminals 4A, and the surfaces of the internal terminals 4A are located on the same plane (the surface indicated by a chain line P1 in FIG. 2).

The die pad 6 is supported by four connection leads 8 extending from each corner of the inner opening of the outer frame member 2. The die pad 6 protrudes toward the surface of the internal terminal 4A (upward in FIG. 2), and the surface formed by the front side 6a of the die pad 6 (the surface indicated by the one-dot chain line P2 in FIG. 2) is the internal terminal. It is configured to form a step G with respect to the 4A surface. The size of the step G is, for example, 10
It can be set within a range of about 0 to 500 μm.

The material of the circuit member 1 can be 42 alloy (Ni 42% Fe alloy), copper, copper alloy or the like.

As shown in FIG. 3, the circuit member of the present invention may be a circuit member 1 'in which an electrically insulating double-sided adhesive tape 7 is provided on the back surface 6b of the die pad portion 6. The double-sided adhesive tape 7 is provided with an adhesive layer on both sides of an electrically insulating base film, for example, Upilex (an electrically insulating base film manufactured by Ube Industries, Ltd.).
A double-sided adhesive tape such as UX1W (manufactured by Hamakawa Paper Mills) having RXF (adhesive manufactured by Hamakawa Paper Mills) layers on both sides can be used.

FIG. 4 is a plan view showing one embodiment of the semiconductor device of the present invention using the circuit member of the present invention shown in FIG. 1, and FIG. 5 is a longitudinal section of the semiconductor device shown in FIG. FIG. 4 and 5, in a semiconductor device 11 of the present invention, a semiconductor element 12 is fixed to a rear surface 6b of a die pad portion 6 by using an electrically insulating double-sided adhesive tape 7, and a circuit formation of the semiconductor element 12 is performed. The surface faces the back surface 6b of the die pad portion 6. Each terminal 12 a of the semiconductor element 12 is connected to an internal terminal 4 A (silver plating layer 5) of the terminal section 4 by a bonding wire 14.

Then, the terminal portion 4, the die pad portion 6, and the semiconductor element 1 are so exposed as to expose a part of the external terminal 4B to the outside.
2 and the bonding wire 14 are sealed by a sealing member 16. The sealing member 16 can be formed using a known resin material used for a sealing type semiconductor device. In the illustrated example, the external terminals 4B exposed to the outside
Is provided with an external electrode 18 made of solder. Thus, a BGA (Ball Grid Array) type semiconductor device is obtained.

For easy understanding of the configuration of the semiconductor device 11, the sealing member 16 is omitted in FIG. 4, and the sealing member 16 is shown by a virtual line (two-dot chain line) in FIG.

In such a semiconductor device 11, the die pad portion 6 functions as a heat sink of the semiconductor element 12. That is, the semiconductor device 11 is connected via the external electrodes 18 made of solder.
Is mounted on the circuit board, the heat generated on the circuit forming surface of the semiconductor element 12 is transmitted to the die pad portion 6 having high thermal conductivity, and is efficiently removed by the cooling air flowing over the semiconductor device 11. The device 11 has extremely good heat dissipation. In the present invention, in order to further improve the heat dissipation of the semiconductor device, as shown in FIG. 6, a sealing member 16 may be provided so that the front side 6a of the die pad portion 6 is exposed to the outside.

In the semiconductor device 11 of the present invention, the surface of the internal terminal 4A (the surface indicated by a dashed line P1 in FIG. 5) and the front side 6a of the die pad portion 6 (the surface indicated by the dashed line P2 in FIG. 5). ), The back side 6 of the die pad portion 6 is formed.
Since the circuit formation surface of the semiconductor element 12 fixed to the terminal b is substantially the same as the internal terminal 4A surface of the terminal portion 4, the bonding wire 14 for electrically connecting the terminal of the semiconductor element 12 and the internal terminal 4A is formed. The tolerance of the loop height is large.

The above-described circuit member 1 and semiconductor device 1
The number of terminals, terminal arrangement, and the like in 1 are merely examples, and the circuit member and the semiconductor device of the present invention are not limited thereto.

Next, a method of manufacturing a circuit member according to the present invention will be described.

FIG. 7 is a process chart showing an embodiment of a method for manufacturing a circuit member of the present invention using the circuit member 1 of the present invention shown in FIGS. 1 and 2 as an example. Each step is described in FIG.
Is shown in a longitudinal sectional view of a circuit member corresponding to FIG.

In FIG. 7, first, a photosensitive resist is applied to the front and back surfaces of the conductive substrate 21, dried, exposed through a desired photomask, and developed to form resist patterns 22A and 22B (FIG. 7). (FIG. 7 (A)). As described above, the conductive substrate 21 is made of a metal substrate (thickness of 100 to 2) made of 42 alloy (Ni 42% Fe alloy), copper, copper alloy, or the like.
50 μm) can be used.
It is preferable to use a material which has been subjected to a cleaning treatment after degreasing both surfaces. Further, as the photosensitive resist, conventionally known ones can be used.

Next, the conductive substrate 21 is etched with a corrosion liquid using the resist patterns 22A and 22B as a corrosion-resistant film (FIG. 7B). The etchant is usually an aqueous solution of ferric chloride, and is spray-etched from both sides of the conductive substrate 21.

Next, resist patterns 22A and 22B
By peeling off and removing, a circuit member pattern is obtained in which the terminal portion 4 and the die pad portion 6 are integrally connected to the outer frame member 2 by the connection leads 3 and the connection leads 8 (not shown), respectively. (FIG. 7 (C)). In this circuit member pattern, the surface of the internal terminal 4A and the surface side 6a of the die pad portion 6 are in the same plane, as is apparent from the drawing.

Next, after the silver plating layer 5 is formed at the position of the internal terminal 4A of the terminal part 4, the die pad part 6 is formed with a predetermined die.
Protrudes toward the internal terminals 4A to form a step between the surface side 6a of the die pad portion 6 and the surface of the internal terminals 4A (FIG. 7).
(D)). Thereby, the circuit member 1 of the present invention is obtained. Further, by attaching an electrically insulating double-sided adhesive tape 7 to the back surface 6b of the die pad portion 6, the circuit member 1 is formed.
'Can be obtained.

Next, a method of manufacturing a semiconductor device according to the present invention will be described.

FIG. 8 is a process chart showing one embodiment of a method of manufacturing the semiconductor device of the present invention shown in FIGS. 4 and 5. Each step is shown in a longitudinal sectional view of the semiconductor device corresponding to FIG. 5 described above.

In FIG. 8, first, the circuit member 1 'manufactured by the above-described manufacturing method of the present invention is used, and the circuit forming surface side of the semiconductor element 12 is electrically connected to the back surface 6b of the die pad portion 6 of the circuit member 1'. The semiconductor element 12 is mounted by being fixed via the insulating double-sided adhesive tape 7 (FIG. 8).
(A) Semiconductor element mounting step).

Next, the terminals of the mounted semiconductor element 12 are:
The silver plating layer 5 of the internal terminal 4A of the circuit member is electrically connected with the bonding wire 14 (FIG. 8 (B) wire bonding step).

Next, the terminal part 4, the die pad part 6, the semiconductor element 12, and the bonding wire 14 are sealed with the sealing member 16 so that a part of the external terminal 4B is exposed to the outside.
(FIG. 8 (C) sealing step).

Next, each connection lead of the circuit member 1 'is cut and the outer frame member 2 is removed to obtain a semiconductor device 11 of the present invention (FIG. 8 (D) outer frame member separation / removal step). Thereafter, the external electrodes 1 made of solder are connected to the external terminals 4B exposed to the outside.
8 is formed.

[0041]

Next, the present invention will be described in more detail with reference to specific examples. (Production of a circuit member) 0.15 mm thick as a conductive substrate
Copper plate (EFTEC64T-1 / Furukawa Electric Co., Ltd.)
2H) was prepared, subjected to a degreasing treatment and a washing treatment, and then coated with an ultraviolet-curable resist (OFPR1305 manufactured by Tokyo Ohka Kogyo Co., Ltd.) on both surfaces of the copper plate by a flowing method and dried. Next, the resist layers on the front side and the back side were respectively exposed through a predetermined photomask, and then developed to form a resist pattern. Thereafter, spray etching was performed on both surfaces of the copper plate using an aqueous ferric chloride solution, and after cleaning, the resist pattern was peeled off using an organic alkali solution.

Next, a silver plating layer (having a thickness of about 5
μm), the die pad portion was made to protrude toward the internal terminal surface with a predetermined mold. As a result, a step of about 250 μm was formed between the surface side of the die pad portion and the silver plating layer of the internal terminal. Then, the electrically insulating double-sided adhesive tape (UH1 manufactured by Tomagawa Paper Mill Co., Ltd.)
W) was attached to form a circuit member. (Fabrication of semiconductor device) A semiconductor element (about 0.25 m thick) was placed on the double-sided adhesive tape on the back side of the die pad portion of the circuit member.
The semiconductor element was mounted on the circuit formation surface side of m) by pressing and heating (140 ° C.). Next, the silver plating layer on the internal terminal of the circuit member and the terminal of the mounted semiconductor element are connected by a gold wire, and thereafter, a part of the external terminal is exposed to the outside, a terminal part, a die pad part,
The semiconductor element and the gold wire are made of a resin material (Nitto Denko Corporation M
P-7400).

Next, each connection lead of the circuit member was cut to remove the outer frame member, and a ball made of solder was bonded to an external terminal exposed outside to form an external electrode.

The semiconductor device manufactured in this way had 80 external terminals, and its external dimensions were as small as 10 mm square, and the thickness was 0.8 mm, which was very thin.

[0045]

As described above in detail, according to the present invention, the occupancy of the semiconductor element is increased, the size of the semiconductor element can be reduced, the mounting density on the circuit board can be improved, and the die pad portion can be formed. Since it acts as a heat radiating plate for heat generated on the circuit forming surface of the semiconductor element, the heat dissipation of the semiconductor device when the semiconductor device is mounted on the circuit board on the external terminal side is extremely good. Due to the step between the surface and the front side of the die pad portion, the tolerance of the loop height of the bonding wire for electrically connecting the terminal of the semiconductor element having the circuit forming surface fixed to the rear side of the die pad portion and the internal terminal is large. Also, by forming a solder electrode on an external terminal, a BGA (Ball Grid Array) type semiconductor device becomes possible, and the mounting workability and short-circuit prevention property are improved. Further, it is possible to cope with the increase in the number of pins, and by using the circuit member of the present invention, a semiconductor device having the above-described effects can be easily manufactured. A semiconductor device can be easily manufactured by the manufacturing method of the present invention.

[Brief description of the drawings]

FIG. 1 is a plan view showing one embodiment of a circuit member of the present invention.

FIG. 2 is a vertical sectional view of the circuit member shown in FIG. 1 taken along the line II-II.

FIG. 3 is a longitudinal sectional view showing another embodiment of the circuit member of the present invention.

FIG. 4 is a plan view showing one embodiment of a semiconductor device of the present invention using the circuit member of the present invention shown in FIG. 1;

5 is a vertical sectional view of the semiconductor device shown in FIG. 4, taken along line VV.

FIG. 6 is a longitudinal sectional view showing another embodiment of the semiconductor device of the present invention.

FIG. 7 is a process chart showing one embodiment of a method for manufacturing a circuit member of the present invention.

FIG. 8 is a process chart showing one embodiment of a method for manufacturing a semiconductor device of the present invention.

[Explanation of symbols]

 1, 1 '... circuit member 2 ... outer frame member 3 ... connection lead 4 ... terminal portion 4A ... internal terminal 4B ... external terminal 6 ... die pad portion 7 ... electrically insulating double-sided adhesive tape 8 ... connection lead 11 ... semiconductor device 12 ... semiconductor element 14 ... bonding wire 16 ... sealing member 18 ... solder external electrode 21 ... conductive substrate

Claims (8)

[Claims] 1. A plurality of terminal portions having an internal terminal on a front surface side and an external terminal on a back surface integrated front and back, and electrically disposed independently so that the internal terminal surface is located on substantially one plane. And a die pad portion protruding toward the internal terminal of the terminal portion and provided such that the surface side forms a step with respect to the internal terminal surface, and the circuit forming surface side is electrically insulated and fixed to the back surface of the die pad portion. A semiconductor element, a bonding wire for electrically connecting an internal terminal of each terminal section and a terminal of the semiconductor element, and the terminal section, the die pad section, and the semiconductor so as to expose a part of an external terminal of each terminal section to the outside. A semiconductor device comprising: a sealing member for sealing an element and a bonding wire. 2. The semiconductor device according to claim 1, wherein at least a part of the surface of the die pad portion is exposed to the outside. 3. The semiconductor device according to claim 1, wherein an external electrode made of solder is provided on the external terminal exposed to the outside. 4. An outer frame member, a plurality of terminal portions arranged independently from each other via connection leads from the outer frame member, and a plurality of terminal portions provided from the outer frame member via connection leads. A die pad portion, each terminal portion has an internal terminal on the front surface side and an external terminal on the back surface integrally front and back, and the internal terminal surface of each terminal portion is located on substantially one plane, and the die pad portion is A circuit member protruding toward an internal terminal surface, the surface of which is located at a position forming a step with respect to the internal terminal surface. 5. The circuit member according to claim 4, wherein an electrically insulating double-sided adhesive tape is provided on a back surface side of the die pad portion. 6. A plurality of terminal portions having an internal terminal on the front side and external terminals on the back side integrally formed by etching the conductive substrate, a die pad portion, and each terminal portion are connected independently of each other. After forming a circuit member pattern including an outer frame member integrally connected via a lead and the die pad portion integrally connected via a connection lead, the die pad of the circuit member pattern is formed. A method of manufacturing a circuit member, comprising: projecting a portion toward an internal terminal surface side of a terminal portion; 7. The method according to claim 6, further comprising attaching an electrically insulating double-sided adhesive tape to the back surface of the die pad portion. 8. A semiconductor mounted on a back surface of a die pad portion of a circuit member manufactured by the manufacturing method according to claim 6 by electrically insulating and fixing a circuit forming surface side of a semiconductor element. An element mounting step, a wire bonding step of electrically connecting an internal terminal of the circuit member and a terminal of the semiconductor element with a bonding wire, and exposing a part of the external terminal to the outside, the terminal section, the die pad section, and the semiconductor element. Manufacturing a semiconductor device, comprising: a sealing step of sealing a bonding wire with a resin material; and an outer frame member separating and removing step of cutting each connection lead of a circuit member and removing an outer frame member. Method.