JPH1056094A - Substrate for semiconductor device and its manufacture, and semiconductor device, and card type module, and information storage device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To apply plating completely into a through hole so as to raise the reliability on wiring by providing hard gold plating at a terminal for external connection, inside a through hole, and in the first region of a terminal for chip connection, and providing soft gold plating in the second region of a terminal for chip connection. SOLUTION: A copper wiring pattern is made, and a part of the wiring on the chip mounting face of a substrate 1 is masked. At this time, a terminal for chip connection is masked, and a through hole 4 is not masked. Next, bright nickel plating and hard gold plating are performed sequentially and the wiring pattern is plated with hard gold. Next, after removal of the mask, the section 3 plated with hard gold is masked. Next, mat nickel plating and hard plating are performed in order, and soft gold plating is applied to the section not covered with a mask. Then, this mask is removed. As a result, soft gold plating 3 is applied to the terminal for chip connection on the semiconductor chip mounting face and the wiring in its periphery.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate for a semiconductor device used for, for example, an IC card and the like, a method of manufacturing the same, a semiconductor device using the substrate, a card type module, and the like.
The present invention relates to an information storage device.

[0002]

2. Description of the Related Art In recent years, card-type storage devices such as IC cards have been put to practical use. In this type of card type storage device, a semiconductor package having a semiconductor chip mounted and resin-molded on only one side and a flat external connection terminal on the back side may be used. The semiconductor chip is provided with, for example, a nonvolatile memory.

FIGS. 9 and 10 show an example of such a semiconductor package. 9 shows a cross-sectional view of the semiconductor package, FIG. 10A shows a perspective view of a resin sealing surface of the semiconductor package, and FIG. 10B shows a perspective view of an external connection terminal surface of the semiconductor package. Is shown. Substrate 1 is 0.1
The substrate is, for example, a resin substrate having a thickness of about 0.4 mm.
The semiconductor chip 6 is fixed on the substrate 1 with an adhesive material 9, and the terminal 2 for chip connection on the substrate 1 and the bonding pad of the semiconductor chip 6 are connected by, for example, gold wires 7, and the substrate is covered with the semiconductor chip 6. One side is resin 8
It is sealed with. The external connection terminal 3 is provided on a surface of the substrate that is not resin-sealed. This external connection terminal 3 is electrically connected to the chip connection terminal 2 by wiring passing through a through hole 4 penetrating the substrate 1.

[0004]

FIG. 8 shows a cross section of a substrate used for such a semiconductor package. Less than,
The same components are denoted by the same reference numerals, and description thereof will be omitted. In the substrate 1, the wiring 2 on the semiconductor chip mounting surface of the substrate is usually subjected to soft gold plating having a purity of 99.9% or more. This is because soft gold or aluminum is used for the bonding wire 7 that connects the bonding pad of the semiconductor chip 6 to the chip connection terminal on the substrate 1. This is because the bonding with the chip connection terminal can be more reliably performed. On the other hand, wiring 3 on the external connection terminal surface
Is subjected to hard gold plating having a purity of about 99%. This is because the hard gold plating is less likely to damage. The boundary 5 between the soft gold plating and the hard gold plating is at the center of the through hole 4.

For simplification, FIG. 8 does not separately show gold plating, nickel plating, copper foil, and copper plating. These layers are collectively shown in FIG. 8 as a chip connection terminal and an external connection terminal.

FIG. 11 shows a manufacturing process of a conventional semiconductor device substrate. The above-described gold plating is performed by the following method. First, a copper foil 24 having a thickness of, for example, 18 μm is attached to both surfaces of the resin substrate 1 with an adhesive. FIG. 11A shows a cross section of the substrate at this stage. Next, a hole is drilled in the substrate to form a through hole 4. FIG.
(B) shows a cross section of the substrate at this stage. afterwards,
The entire substrate is plated with copper 25. Copper plating 25 is supplied to both sides of the substrate and inside the through holes. As a result, both surfaces of the substrate are electrically connected by the copper plating. FIG.
(C) shows a cross section of the substrate at this stage.

[0007] Further, a photoresist type dry film, for example, is adhered on copper of the substrate, and exposure, patterning and copper etching are sequentially performed to form a copper wiring pattern. FIG. 11D shows a cross section of the substrate at this level.

Usually, copper wiring is formed by both copper foil and copper plating. The reason is as follows. Since the copper foil is provided by pasting on the substrate, it is easy to increase the thickness of the wiring, but copper plating can be made thicker because the progress of plating itself is slow. This is because it cannot be done easily. Of course, if efficiency is not a problem, it takes time.
It is also possible to form a wiring only by copper plating without using a copper foil.

Next, the entire surface on which the chip is mounted is masked using a tape or a photoresist type dry film, for example. Subsequently, bright nickel (not shown) and hard gold are continuously plated, and hard gold plating is applied to the copper pattern on the external connection terminal surface and the copper in the through hole 4.

Next, the entire surface of the external connection terminal of the hard gold-plated substrate is masked using a tape or a dry film, and matte or semi-gloss nickel (not shown) and soft gold are sequentially plated. . As a result, soft gold plating is applied to the copper wiring on the chip mounting surface and in the through hole 4. The reason why nickel plating is performed prior to gold plating when performing hard gold plating or soft gold plating is to prevent gold from diffusing into copper in the long term by interposing nickel between gold and copper.

In some cases, the plating order is reversed so that the chip mounting surface is soft gold plated first, and then the external connection terminal surface is hard gold plated. In such a method, when performing soft or hard gold plating, one side of the through-hole portion 4 is blocked by the mask, so that air is accumulated in the through-hole 4 and the plating solution is less likely to flow into the through-hole 4. Therefore, plating may not be able to be performed up to the center of the through hole 4.

In the through-hole 4, there is a portion that cannot be plated in either soft gold plating or hard gold plating, and when a copper or nickel base metal is exposed, a battery action or a corrosion action occurs in the through-hole 4. , Leading to disconnection of the wiring. The present invention has been made in view of the above problems,
It is an object to improve the reliability of wiring by completely plating the through holes.

[0013]

In order to solve the above problems, a substrate having a first main surface, a second main surface, and a through hole provided with the first and second main surfaces in this manner. And an external connection terminal provided on a first main surface of the substrate, and electrically connected to the external connection terminal via the through hole, and provided on a second main surface of the substrate. A hard gold plating is provided on the external connection terminal, the inside of the through hole and a first region of the chip connection terminal, and a soft gold plating is provided on a second region of the chip connection terminal. Is provided, and a semiconductor device substrate is provided.

Also, a first main surface, a second main surface and the first,
A substrate having a through-hole provided to penetrate the second main surface, an external connection terminal provided on the first main surface of the substrate, and an electric connection with the external connection terminal via the through-hole. And a chip connection terminal provided on a second main surface of the substrate, and a first region of the chip connection terminal, the inside of the through hole and the first region of the external connection terminal is soft gold plated. And a second region of the external connection terminal is provided with hard gold plating.

Further, a copper-plated wiring pattern is formed on the first and second main surfaces of the substrate and inside the through holes provided so as to penetrate the first and second main surfaces by using a photolithography technique and an etching technique. Forming a first mask on the first main surface of the substrate so as to cover the wiring pattern on the first main surface without covering the through hole; A step of sequentially plating nickel and hard gold on a wiring pattern that is not covered by the first mask and a wiring pattern inside the through hole; a step of removing the first mask; and a step of removing the hard gold-plated wiring pattern. Forming a second mask so as to cover the first mask, sequentially plating nickel and soft gold on a wiring pattern not covered with the second mask, and a second mask Comprising a method of manufacturing a substrate for a semiconductor device characterized by comprising the step of removing.

A copper-plated wiring pattern is formed on the first and second main surfaces of the substrate and inside the through holes provided so as to penetrate the first and second main surfaces by using a photolithography technique and an etching technique. Forming the first, and the first
Forming a first mask on the first main surface of the substrate so as to cover the wiring pattern on the main surface and the through hole; and forming a first mask on the wiring pattern not covered with the first mask. A step of sequentially plating nickel and soft gold, a step of removing the first mask, a step of forming a second mask so as to cover the wiring pattern plated with soft gold, and a step of covering with the second mask. A method for manufacturing a substrate for a semiconductor device, comprising: a step of sequentially plating nickel and hard gold on an unremoved wiring pattern and inside the through hole; and a step of removing a second mask. .

Further, on a substrate having a through hole penetrating from the first main surface of the substrate to the second main surface, at least a periphery of the through hole of the first main surface of the substrate and a through hole of the second main surface of the substrate A semiconductor device comprising: a step of forming hard gold plating on the periphery and inside of the through hole; and a step of forming soft gold plating on at least a first main surface of the substrate that is not covered with the hard gold plating. And a method for manufacturing a substrate.

Further, on a substrate having a through hole penetrating from the first main surface of the substrate to the second main surface, at least a periphery of the through hole of the first main surface of the substrate and a through hole of the second main surface of the substrate A semiconductor device comprising: a step of forming soft gold plating on the periphery and inside the through hole; and a step of forming hard gold plating on at least a first main surface of the substrate that is not covered with the soft gold plating. And a method for manufacturing a substrate.

Further, a substrate having a first main surface, a second main surface, and a through hole provided so as to penetrate the first and second main surfaces, and a substrate provided on the first main surface of the substrate. An external connection terminal, a chip connection terminal electrically connected to the external connection terminal via the through hole, and a chip connection terminal provided on a second main surface of the substrate; A semiconductor chip provided on a second main surface of the substrate, and a resin sealing portion covering at least a part of the second main surface of the substrate, wherein the terminal for external connection;
The first of the inside of the through hole and the chip connection terminal
The semiconductor device is characterized in that hard gold plating is provided in the region, and soft gold plating is provided in the second region of the chip connection terminal.

Also, the first main surface, the second main surface and the first,
A substrate having a through hole provided so as to penetrate the second main surface, an external connection terminal provided on the first main surface of the substrate, and an electric connection with the external connection terminal via the through hole. A chip connection terminal provided on the second main surface of the substrate, and a semiconductor chip provided on the second main surface of the substrate and electrically connected to the chip connection terminal. A resin sealing portion that covers a part of a second main surface of the substrate, wherein the first region of the chip connection terminal, the inside of the through hole and the external connection terminal is provided with soft gold plating, The semiconductor device is characterized in that hard gold plating is provided in the second region of the external connection terminal.

Further, a card type support having a depression,
A substrate having a first main surface, a second main surface, and a through hole provided to penetrate the first and second main surfaces, and an external connection terminal provided on the first main surface of the substrate. Electrically connected to the external connection terminal via the through hole, a chip connection terminal provided on a second main surface of the substrate, and electrically connected to the chip connection terminal,
A semiconductor chip provided on a second main surface of the substrate, and a resin sealing portion covering at least a part of the second main surface of the substrate, wherein the terminal for external connection, the inside of the through hole, and the chip connection Hard gold plating is provided on a first region of the terminal for chip connection, and soft gold plating is provided on a second region of the terminal for chip connection, and is embedded in the recess of the card-type support or on the resin sealing portion side of the substrate. And a card-type module characterized in that the card-type module is mounted.

Also, a card-shaped support having a depression, a substrate having a first main surface, a second main surface, and a through hole provided so as to penetrate the first and second main surfaces, An external connection terminal provided on the first main surface, and a chip connection terminal electrically connected to the external connection terminal via the through hole and provided on the second main surface of the substrate. A semiconductor chip electrically connected to the chip connection terminal and provided on a second main surface of the substrate, and a resin sealing portion covering at least a part of the second main surface of the substrate; The first region of the chip connection terminal, the inside of the through-hole and the external connection terminal is provided with soft gold plating, and the second region of the external connection terminal is provided with hard gold plating. The resin sealing portion side of the substrate in the recess It mounted embedded in comprising a card-type module according to claim.

Further, a card-shaped support having a depression,
A substrate having a first main surface, a second main surface, and a through hole provided to penetrate the first and second main surfaces, and an external connection terminal provided on the first main surface of the substrate. Electrically connected to the external connection terminal via the through hole, a chip connection terminal provided on a second main surface of the substrate, and electrically connected to the chip connection terminal,
A semiconductor chip provided on a second main surface of the substrate, and a resin sealing portion covering at least a part of the second main surface of the substrate, wherein the terminal for external connection, the inside of the through hole, and the chip connection Hard gold plating is provided in a first region of the terminal for chip connection, soft gold plating is provided in a second region of the terminal for chip connection, and the resin sealing portion side of the substrate is embedded in a recess of the card-type support. A card-type module that is attached to the card-type module, a first connector connected to an external connection terminal of the card-type module, a second connector connected to a device, the first and second connectors. A main part having an interface control circuit connected to the connector; and an information storage device.

Also, a card-shaped support having a depression, a substrate having a first main surface, a second main surface, and a through hole provided so as to penetrate the first and second main surfaces, An external connection terminal provided on the first main surface, and a chip connection terminal electrically connected to the external connection terminal via the through hole and provided on the second main surface of the substrate. A semiconductor chip electrically connected to the chip connection terminal and provided on a second main surface of the substrate, and a resin sealing portion covering at least a part of the second main surface of the substrate; The first region of the chip connection terminal, the inside of the through-hole and the external connection terminal is provided with soft gold plating, and the second region of the external connection terminal is provided with hard gold plating. The resin part side of the substrate is embedded in the recess. A card-type module that is inserted and attached; a first connector connected to an external connection terminal of the card-type module; a second connector connected to a device; And a main part having an interface control circuit connected to the second connector.

[0025]

Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 shows a semiconductor device substrate of the present invention. FIG. 6 shows a manufacturing process of the semiconductor device substrate of the present invention.

First, for example, a copper foil 24 having a thickness of 18 μm is attached to both surfaces of the resin substrate 1 with an adhesive. FIG.
(A) shows a cross section of the substrate at this stage. next,
A hole is made in the substrate with a drill to form a through hole 4.
FIG. 6B shows a cross section of the substrate at this stage. Thereafter, the entire substrate is plated with copper. The thickness of the copper plating is, for example, 10 μm to 15 μm. FIG. 6C shows a cross section of the substrate at this stage. As a result, the inside 4 of the through hole and both surfaces of the substrate 1 are plated with copper 25, and both surfaces of the substrate are electrically connected. Further, a photoresist type dry film, for example, is attached on the copper 25 of the substrate, and exposure, patterning and copper etching are sequentially performed to form a copper wiring pattern. FIG. 6D shows a cross section of the substrate at this stage.

Next, a part of the wiring on the chip mounting surface of the substrate is masked. At this time, the chip connection terminals are masked, and the through holes 4 are not masked. Further, the mask is formed by affixing a tape processed into a predetermined shape to the substrate, or by applying a dry film to the entire chip mounting surface and patterning the mask using a lithography technique. Subsequently, bright nickel plating (not shown) and hard gold plating are sequentially performed, and hard gold plating 3 is applied to the wiring pattern. FIG. 6E shows a cross section of the substrate at this stage. At this time, since the upper and lower holes of the through-hole portion 4 are not both closed by the mask, the plating solution flows well through the through-hole portion 4. As a result, the hard gold plating 3 is applied to all of the copper in the through hole 4, the wiring pattern of the portion not masked on the chip mounting surface, and all the wiring of the external connection terminal surface.

Next, after removing the above-mentioned mask, a mask is applied to the hard gold-plated portion 3 by the above-described method. Subsequently, matte nickel plating (not shown) and soft gold plating are sequentially performed, and soft gold plating 2 is applied to portions not covered by the mask. After that, the mask is removed. As a result, the soft gold plating 2 is applied to the chip connection terminals on the semiconductor chip mounting surface and the wiring around the terminals. FIG. 6 (f)
Shows the cross section of the substrate at this stage.

As described above, in the present embodiment, the entire copper in the through-hole 4 is hard gold-plated, and the boundary 5 between the soft gold plating and the hard gold plating is outside the through-hole 4, that is, the through-hole 4 is connected to the chip. Between terminals. In FIG. 1, for simplicity, only the wiring and chip connection terminals, and the hard gold-plated wiring and external connection terminals, which are plated with soft gold on the substrate, are shown. The same applies to FIGS. 2 and 3 described later.

The above-described plating order can be reversed. First, soft gold plating is applied to the chip connection terminals on the chip mounting surface and the periphery thereof, and then the portions of the chip mounting surface where soft gold plating is not applied, the through holes, and the external connection. The terminal surface may be plated with hard gold.

FIG. 4 is a top view of the semiconductor device substrate of the present invention. The wiring 12 extends from the chip connection terminal 11, passes through the through hole 4, and is connected to an external connection terminal provided on the back surface. Reference numeral 13 denotes a surface on which the semiconductor chip is placed, and reference numeral 14 denotes a boundary line to be sealed with resin. Reference numeral 15 denotes a cutting line for cutting out the semiconductor module after the semiconductor chip is mounted on the substrate 1 and sealed with a resin. Reference numeral 16 denotes a boundary between soft gold plating and hard gold plating. Wiring inside the boundary 16 is soft gold-plated, and wiring outside the boundary 16 is hard gold-plated.

FIG. 2 shows a semiconductor package according to the present invention. A semiconductor chip 6 is adhered to the substrate of the present invention shown in FIG. 1 using an adhesive 9, and bonding pads of the semiconductor chip 6 are connected to chip connection terminals of the substrate 1 by, for example, gold wires 7. Only the mounting surface is sealed with the resin 8. As a result, a semiconductor package is formed. Here, the material of the resin is, for example, epoxy resin, and a nonvolatile semiconductor memory is used for the semiconductor chip.
Type flash EEPROM is used. Alternatively, the semiconductor chip and the chip connection terminal of the substrate may be connected by flip-chip connection using the bump 10 as shown in FIG. 3 without using the gold wire 7.

The semiconductor package shown in FIG. 2 and FIG.
For example, it is used for a card type module as shown in FIG. Base card 18 used for card type module
Is formed of resin and has, for example, a height, width, and thickness of 37.
mm × 45 mm × 0.76 mm, and a recess 18 a is provided. The semiconductor package 17 is embedded with the resin sealing surface of the semiconductor package 17 facing the recess 18a of the base card 18 so that the external connection terminals 3 and the surface of the base card 18 are substantially flush with each other. Is done.

The card type module shown in FIG.
Used for memory cards and the like. FIG. 7 shows an adapter card for mounting the card type module in a PCMCIA card slot or the like of a personal computer. The adapter card 20 has a card-shaped outer shape. The adapter card 20 has an insertion slot 20a for mounting the card type module 19, and has a connector 23 that can be mounted in a PCMCIA card slot of a personal computer as standard. Inside the adapter card 20, a connector 22 that contacts the external connection terminal 3 of the card type module 19;
An interface circuit 21 having an interface function between a card type module and a device such as a personal computer is provided.

Although not shown, the adapter is a PC
The card 2 does not have to be a card type that can be inserted into the MCIA card slot, and a connector 2 that contacts the external connection terminal 3 of the card type module on the body of a personal computer or a camera.
2 and an interface circuit 21 and the like.

A drive circuit or the like for controlling the card type module by an electric signal may be provided inside the adapter card 20. In the above description, the substrate is made of resin, but may be a tab tape.

In the above description, the inside of the through-hole and the periphery of the through-hole on the front and back surfaces of the substrate are hard gold-plated. However, the present invention is not limited to this, and soft gold plating may be used.

[0038]

As described above, in the substrate of the present invention, since the through-hole portion is not blocked at the time of selective plating of the substrate, the plating solution can easily flow through the through-hole portion, and the surface of the through-hole can be easily removed. Is securely plated, and
The plating boundary disappears in the through hole. As a result, no battery action or corrosion action occurs in the through-hole portion, and the reliability of the through-hole is improved.

[Brief description of the drawings]

FIG. 1 is a sectional view of a substrate of the present invention.

FIG. 2 is a cross-sectional view of a semiconductor device of the present invention.

FIG. 3 is a cross-sectional view of a semiconductor device of the present invention.

FIG. 4 is a top view of the substrate of the present invention.

FIG. 5 is a perspective view of a card type module of the present invention.

FIG. 6 is a view showing a manufacturing process of the substrate of the present invention.

FIG. 7 is a perspective view showing an adapter card of the present invention.

FIG. 8 is a cross-sectional view of a conventional substrate.

FIG. 9 is a cross-sectional view of a conventional semiconductor device.

FIG. 10 is a perspective view of a conventional semiconductor device.

FIG. 11 is a view showing a conventional substrate manufacturing process.

[Description of Signs] 1 ... Substrate 2 ... Soft gold-plated wiring and terminal for chip connection 3 ... Hard gold-plated wiring and external connection terminal 4 ... Through hole 5 ... Plating boundary 6 ... Semiconductor chip , 7 ... gold wire, 8 ... resin, 9 ... adhesive.

Claims (26)

[Claims] A first main surface, a second main surface, and the first and second main surfaces;
A substrate having a through-hole provided to penetrate the main surface, an external connection terminal provided on the first main surface of the substrate, and electrically connecting to the external connection terminal via the through-hole. A chip connection terminal provided on a second main surface of the substrate, and the external connection terminal;
The first of the inside of the through hole and the chip connection terminal
A semiconductor device substrate, wherein hard gold plating is provided in a region, and soft gold plating is provided in a second region of the chip connection terminal. 2. The semiconductor device substrate according to claim 1, wherein said external connection terminal has a flat region. 3. The semiconductor device substrate according to claim 1, wherein said chip connection terminal has a flat region. 4. The semiconductor device substrate according to claim 1, wherein said chip connection terminals are arranged around said substrate. 5. A first main surface, a second main surface and the first and second main surfaces.
A substrate having a through hole provided to penetrate the main surface, an external connection terminal provided on the first main surface of the substrate, and electrically connected to the external connection terminal via the through hole. And a chip connection terminal provided on a second main surface of the substrate, and soft gold plating is provided on a first region of the chip connection terminal, the inside of the through hole and the external connection terminal. And a second region of the external connection terminal is provided with hard gold plating. 6. The semiconductor device substrate according to claim 5, wherein said external connection terminal has a flat region. 7. The semiconductor device substrate according to claim 5, wherein said chip connection terminal has a flat region. 8. The substrate for a semiconductor device according to claim 5, wherein said chip connection terminals are arranged around said substrate. 9. The method according to claim 1, further comprising the steps of:
Forming a copper-plated wiring pattern using a photolithography technique and an etching technique inside a through-hole provided to penetrate the second main face; and forming the first main face without covering the through-hole. Forming a first mask on the first main surface of the substrate so as to cover the upper wiring pattern, and on a wiring pattern not covered by the first mask and on a wiring pattern inside the through hole; A step of sequentially plating nickel and hard gold, a step of removing the first mask, a step of forming a second mask so as to cover the wiring pattern plated with the hard gold, and a step of: A substrate for a semiconductor device, comprising: a step of sequentially plating nickel and soft gold on an uncovered wiring pattern; and a step of removing a second mask. The method of production. 10. The method according to claim 9, wherein the wiring pattern covered with the hard gold functions as an external connection terminal. 11. A copper-plated wiring pattern on a first and second main surface of a substrate and in a through hole provided so as to penetrate the first and second main surfaces using a photolithography technique and an etching technique. Forming the first, and the first
Forming a first mask on the first main surface of the substrate so as to cover the wiring pattern on the main surface and the through hole; and forming a first mask on the wiring pattern not covered with the first mask. A step of sequentially plating nickel and soft gold, a step of removing the first mask, a step of forming a second mask so as to cover the wiring pattern plated with soft gold, and a step of covering with the second mask. A method for manufacturing a substrate for a semiconductor device, comprising: a step of sequentially plating nickel and hard gold on an unexposed wiring pattern and the inside of the through hole; and a step of removing a second mask. 12. The method for manufacturing a semiconductor device substrate according to claim 11, wherein the wiring pattern covered with the hard gold functions as an external connection terminal. 13. On a substrate having a through hole penetrating from the first main surface of the substrate to the second main surface, at least the periphery of the through hole of the first main surface of the substrate, and the through hole of the second main surface of the substrate. A semiconductor device comprising: a step of forming hard gold plating on the periphery and inside of the through hole; and a step of forming soft gold plating on at least a first main surface of the substrate that is not covered with the hard gold plating. Method of manufacturing substrates. 14. The method according to claim 13, wherein the wiring pattern covered with the hard gold functions as an external connection terminal. 15. A substrate having a through hole penetrating from the first main surface of the substrate to the second main surface, at least around the through hole of the first main surface of the substrate, and the through hole of the second main surface of the substrate. A semiconductor device comprising: a step of forming soft gold plating on the periphery and inside the through hole; and a step of forming hard gold plating on at least a first main surface of the substrate that is not covered with the soft gold plating. Method of manufacturing substrates. 16. The method for manufacturing a semiconductor device substrate according to claim 15, wherein the wiring pattern covered with the hard gold functions as an external connection terminal. 17. A substrate having a first principal surface, a second principal surface, and a through hole provided to penetrate the first and second principal surfaces, and a substrate provided on the first principal surface of the substrate. An external connection terminal, a chip connection terminal electrically connected to the external connection terminal via the through hole, and a chip connection terminal provided on a second main surface of the substrate; A semiconductor chip provided on the second main surface of the substrate, and a resin sealing portion covering at least a part of the second main surface of the substrate, wherein the terminal for external connection and the inside of the through hole are provided. And a first region of the chip connection terminal is provided with hard gold plating, and a second region of the chip connection terminal is provided with soft gold plating. 18. The semiconductor device according to claim 17, wherein said chip connection terminal and said semiconductor chip are connected by a wire. 19. The semiconductor device according to claim 17, wherein said chip connection terminal and said semiconductor chip are connected by flip-chip connection. 20. A substrate having a first main surface, a second main surface, and a through hole provided to penetrate the first and second main surfaces, and a substrate provided on the first main surface of the substrate. An external connection terminal, a chip connection terminal electrically connected to the external connection terminal via the through hole, and a chip connection terminal provided on a second main surface of the substrate; A semiconductor chip provided on the second main surface of the substrate, and a resin sealing portion covering at least a part of the second main surface of the substrate, the chip connection terminal, the through hole Soft gold plating is provided on a first region of the internal connection terminal and the external connection terminal, and a second region of the external connection terminal is provided.
A semiconductor device, wherein hard gold plating is provided in an area. 21. The semiconductor device according to claim 20, wherein said chip connection terminal and said semiconductor chip are connected by a wire. 22. The semiconductor device according to claim 20, wherein said chip connection terminal and said semiconductor chip are connected by flip-chip connection. 23. A card-shaped support having a depression, and a first
A substrate having a main surface, a second main surface, and a through hole provided to penetrate the first and second main surfaces; an external connection terminal provided on a first main surface of the substrate; A chip connection terminal provided on a second main surface of the substrate, electrically connected to the external connection terminal via a through hole, and electrically connected to the chip connection terminal; A semiconductor chip provided on a second main surface, and a resin sealing portion covering at least a part of the second main surface of the substrate, wherein the terminal for external connection, the inside of the through hole, and the terminal for chip connection are provided. The first region is provided with hard gold plating, the second region of the chip connection terminal is provided with soft gold plating, and the resin sealing portion side of the substrate is embedded and mounted in a recess of the card type support. Card characterized by having Module. 24. A card-shaped support having a depression, and a first
A substrate having a main surface, a second main surface, and a through hole provided to penetrate the first and second main surfaces; an external connection terminal provided on a first main surface of the substrate; A chip connection terminal provided on a second main surface of the substrate, electrically connected to the external connection terminal via a through hole, and electrically connected to the chip connection terminal; A semiconductor chip provided on a second main surface, and a resin sealing portion covering at least a part of the second main surface of the substrate, wherein the terminal for chip connection, the inside of the through hole and the terminal for external connection are provided. The first area is provided with soft gold plating, the second area of the external connection terminal is provided with hard gold plating, and the resin sealing portion side of the substrate is embedded and mounted in a recess of the card type support. Card type characterized by being Jules. 25. A card-shaped support having a depression, the first support comprising:
A substrate having a main surface, a second main surface, and a through hole provided to penetrate the first and second main surfaces; an external connection terminal provided on a first main surface of the substrate; A chip connection terminal provided on a second main surface of the substrate, electrically connected to the external connection terminal via a through hole, and electrically connected to the chip connection terminal; A semiconductor chip provided on a second main surface, and a resin sealing portion covering at least a part of the second main surface of the substrate, wherein the terminal for external connection, the inside of the through hole, and the terminal for chip connection are provided. The first area is provided with hard gold plating, and the second area of the chip connection terminal is provided with soft gold plating, and is mounted in the recess of the card type support by being embedded in the resin sealing portion side of the substrate. Card type Module, a first connector connected to an external connection terminal of the card type module, a second connector connected to a device, and an interface control circuit connected to the first and second connectors. An information storage device, comprising: 26. A card-shaped support having a depression, the first support comprising:
A substrate having a main surface, a second main surface, and a through hole provided to penetrate the first and second main surfaces, an external connection terminal provided on the first main surface of the substrate, A chip connection terminal provided on a second main surface of the substrate, electrically connected to the external connection terminal via a through hole, and electrically connected to the chip connection terminal; A semiconductor chip provided on a second main surface, and a resin sealing portion covering at least a part of the second main surface of the substrate, wherein the terminal for chip connection, the inside of the through hole and the terminal for external connection are provided. The first area is provided with soft gold plating, the second area of the external connection terminal is provided with hard gold plating, and the resin sealing portion side of the substrate is embedded and mounted in a recess of the card type support. Card type Module, a first connector connected to an external connection terminal of the card type module, a second connector connected to a device, and an interface control circuit connected to the first and second connectors. An information storage device, comprising: